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| Image | Part # | Manufacturer | Description | Availability | Pricing | Quantity | Factory Lead Time | Surface Mount | Housing material | Body material | Number of Terminals | Transistor Element Material | Exterior Housing Material | Backlight voltage | Button and head shape | Button head shape | Case | Date Of Intro | Dielectric strength | Drain Current-Max (ID) | Gross weight | Head and button shape | Ihs Manufacturer | Illuation color | Illumination voltage | Indicator type | Installation diameter | Insulation voltage | Kind of integrated circuit | Kind of package | LED operating life | LED service life | LED working life | Manufacturer Package Code | Mounting | Mounting diameter | Nominal voltage | Number of switching cycles (electrical) | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Protection class | Relative humidity | Rohs Code | Switching cycles (electric) | Switching cycles (electrical) | Switching scheme | Transport packaging size/quantity | Turn-off Time-Max (toff) | Turn-on Time-Max (ton) | Type of integrated circuit | Operating temperature | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Additional Feature | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Frequency | Time@Peak Reflow Temperature-Max (s) | Pin Count | Reference Standard | JESD-30 Code | Qualification Status | Contact resistance | Configuration | Insulation resistance | Number of channels | Operating Mode | Output current | Case Connection | Switch type | Transistor Application | Polarity/Channel Type | Operating temperature range | Rated current | JEDEC-95 Code | Drain-source On Resistance-Max | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | Power Dissipation-Max (Abs) | Rated voltage | Feedback Cap-Max (Crss) | Highest Frequency Band | Saturation Current | Power Gain-Min (Gp) | Contacts | Backlight color | Diameter |
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  | Mfr. Part #SIR662DP-T1-GE3Twicea Part #534-375-SIR662DP-T1-GE3 | Vishay Intertechnologies |
Power Field-Effect Transistor, 60A I(D), 60V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8
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| 5000
In Stock
| Min.:1 Mult.:1 | - | YES | nickel-plated brass | - | 5 | SILICON | 1 | 12 V | - | - | - | - | 2000 (50 Hz / 5 s) V | 60 A | 76.00 | flat ring and button | VISHAY INTERTECHNOLOGY INC | - | - | dot | - | - | - | - | - | - | ≥40000 hours | - | - | 30 mm | - | ≥50000 | 150 °C | - | UNSPECIFIED | HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8 | RECTANGULAR | SMALL OUTLINE | Not Recommended | - | IP65 | 45...85 % | Yes | - | - | ON-OFF + OFF-ON with fixation | 62*27*28/50 | - | - | - | - | e3 | - | EAR99 | Matte Tin (Sn) | - | DUAL | C BEND | 260 | compliant | - | 30 | - | - | R-XDSO-C5 | Not Qualified | ≤50 mΩ | SINGLE WITH BUILT-IN DIODE | ≥1000 MΩ | - | ENHANCEMENT MODE | - | DRAIN | GQ30 series vandal-proof button with backlight | SWITCHING | N-CHANNEL | -25…+55 °C | 5 A | - | 0.0048 Ω | 100 A | 60 V | 80 mJ | METAL-OXIDE SEMICONDUCTOR | 104 W | 250 V | - | - | 1 | - | 4Pin+2Pin | blue | 35 mm | |
| SIR662DP-T1-GE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #SI4190ADY-T1-GE3Twicea Part #534-375-SI4190ADY-T1-GE3 | Vishay Intertechnologies |
Description: Small Signal Field-Effect Transistor, 18.4A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8
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| 66080
In Stock
| Min.:1 Mult.:1 | 28 Weeks | YES | nickel-plated brass | - | 8 | SILICON | 1 | 12 V | - | - | - | - | 2000 (50 Hz / 5 s) V | 18.4 A | 44.00 | flat ring and button | VISHAY INTERTECHNOLOGY INC | - | - | dot | - | - | - | - | ≥40000 hours | - | - | - | - | 25 mm | 250 V | ≥50000 | - | - | PLASTIC/EPOXY | HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8 | RECTANGULAR | SMALL OUTLINE | Active | - | IP65 | 45...85 % | Yes | - | - | ON-OFF + OFF-ON with fixing | 62*27*28/50 | - | - | - | - | e3 | - | EAR99 | Matte Tin (Sn) | - | DUAL | GULL WING | - | compliant | - | - | - | - | R-PDSO-G8 | - | ≤50 mΩ | SINGLE WITH BUILT-IN DIODE | ≥1000 MΩ | - | ENHANCEMENT MODE | - | - | GQ25 series vandal-proof button with backlight | SWITCHING | N-CHANNEL | -25…+55 °C | 5 A | MS-012AA | 0.0088 Ω | - | 100 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | 1 | - | 4Pin+2Pin | blue | 28 mm | |
| SI4190ADY-T1-GE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #SIR638DP-T1-GE3Twicea Part #534-375-SIR638DP-T1-GE3 | Vishay Intertechnologies |
Description: Power Field-Effect Transistor,
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| 83520
In Stock
| Min.:1 Mult.:1 | 28 Weeks | YES | nickel-plated brass | - | 5 | SILICON | 1 | 12 V | - | flat ring and button | - | 2016-05-01 | 2000 (50 Hz / 5 sec) V | 100 A | 32.20 | - | VISHAY INTERTECHNOLOGY INC | - | - | ring | 22 mm | - | - | - | - | 40000 hours min | - | - | - | - | 250 V | - | 150 °C | -55 °C | PLASTIC/EPOXY | SOP-8 | RECTANGULAR | SMALL OUTLINE | Active | - | IP65 | 45...85 % | Yes | - | 50000 min | ON-(OFF) + OFF-(ON) non-latching | 28.5*21*19/50 | 120 ns | 82 ns | - | - | - | - | EAR99 | - | - | DUAL | FLAT | NOT SPECIFIED | unknown | - | NOT SPECIFIED | - | - | R-PDSO-F5 | - | 50 mΩ max | SINGLE WITH BUILT-IN DIODE | 1000 MΩ min | - | ENHANCEMENT MODE | - | DRAIN | GQ22 series vandal resistant button with backlight | SWITCHING | N-CHANNEL | -25…+55 °C | 5 A | - | 0.00088 Ω | 400 A | 40 V | 125 mJ | METAL-OXIDE SEMICONDUCTOR | 104 W | - | 250 pF | - | - | - | 4Pin+2Pin | green | 25 mm | |
| SIR638DP-T1-GE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #SIZ300DT-T1-GE3Twicea Part #534-375-SIZ300DT-T1-GE3 | Vishay Intertechnologies |
Power Field-Effect Transistor, 11A I(D), 30V, 0.024ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 3 X 3 MM, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAIR-8
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| 380
In Stock
| Min.:1 Mult.:1 | - | YES | nickel-plated brass | - | 8 | SILICON | 2 | - | flat ring and button | - | - | - | 2000 (50 Hz / 5 s) V | 11 A | 33.00 | - | VISHAY INTERTECHNOLOGY INC | redmin | 12 V | dot | - | - | - | - | - | - | ≥40000 hours | - | - | 22 mm | 250 V | ≥50000 | 150 °C | - | UNSPECIFIED | 3 X 3 MM, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAIR-8 | SQUARE | SMALL OUTLINE | Not Recommended | - | IP65 | 45...85 % | Yes | - | - | ON-(OFF) + OFF-(ON) without fixation | 62*27.5*28/100 | - | - | - | - | e3 | - | EAR99 | MATTE TIN | - | DUAL | NO LEAD | - | compliant | - | - | - | - | S-XDSO-N8 | - | ≤50 mΩ | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | ≥1000 MΩ | - | ENHANCEMENT MODE | - | DRAIN SOURCE | GQ22 series anti-vandal illuminated button | SWITCHING | N-CHANNEL | -25…+55 °C | 5 A | - | 0.024 Ω | 30 A | 30 V | 7 mJ | METAL-OXIDE SEMICONDUCTOR | 31 W | - | - | - | - | - | 4Pin+2Pin | - | 25 mm | |
| SIZ300DT-T1-GE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #SI4816BDY-T1-GE3Twicea Part #534-375-SI4816BDY-T1-GE3 | Vishay Intertechnologies |
Small Signal Field-Effect Transistor, 5.8A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA,
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| 74830
In Stock
| Min.:1 Mult.:1 | 18 Weeks | YES | - | nickel-plated brass | 8 | SILICON | 2 | - | - | - | SOP8 | - | 2000 (50 Hz / 5 s) V | 5.8 A | 1 g | ring - cone; flat button | VISHAY INTERTECHNOLOGY INC | bluemin | 12 V | dot | - | - | PWM controller | reel, | ≥40000 hours | - | - | - | SMD | 28 mm | - | - | 150 °C | -55 °C | PLASTIC/EPOXY | - | RECTANGULAR | SMALL OUTLINE | Active | - | IP65 | 45...85 % | Yes | ≥50000 | - | ON-(OFF) + OFF-(ON) without fixation | 62*27*28/50 | - | - | PMIC | -40...85°C | e3 | - | EAR99 | Matte Tin (Sn) | - | DUAL | GULL WING | 260 | compliant | 0.5MHz | 30 | - | - | R-PDSO-G8 | - | ≤50 mOhm | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | ≥1000 MOhm | - | ENHANCEMENT MODE | 1A | - | GQ28 series vandal-proof button with illumination | - | N-CHANNEL | -25…+55 °C | 5 A | MS-012AA | 0.0185 Ω | - | 30 V | - | METAL-OXIDE SEMICONDUCTOR | 2.4 W | 250 V | - | - | 1 | - | 4Pin+2Pin | - | 32 mm | |
| SI4816BDY-T1-GE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #IRF6217TRPBFTwicea Part #3717-375-IRF6217TRPBF | International Rectifier |
Small Signal Field-Effect Transistor, 0.7A I(D), 150V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8
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| Min.:1 Mult.:1 | - | YES | nickel-plated brass | - | 8 | SILICON | 1 | 12 V | - | - | - | - | 2000 (50 Hz / 1 min) V | 0.7 A | 25.00 | ring - cone; flat button | INTERNATIONAL RECTIFIER CORP | - | - | ring | - | - | - | - | - | - | ≥40000 hours | - | - | 19 mm | - | ≥200000 | 150 °C | - | PLASTIC/EPOXY | LEAD FREE, SOP-8 | RECTANGULAR | SMALL OUTLINE | Transferred | SOIC | IP65 | 45...85 % | Yes | - | - | OFF-ON with fixation | 42.5*27.5*30.5/500 | - | - | - | - | e3 | Yes | EAR99 | MATTE TIN | - | DUAL | GULL WING | 260 | compliant | - | 30 | 8 | - | R-PDSO-G8 | Not Qualified | ≤50 mΩ | SINGLE WITH BUILT-IN DIODE | ≥1000 MΩ | - | ENHANCEMENT MODE | - | - | GQ19 series vandal resistant button with backlight | SWITCHING | P-CHANNEL | -25…+55 °C | 2 A | MS-012AA | 2.4 Ω | - | 150 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | 1 | - | 2S+2S (screw) | blue | 22 mm | ||
| IRF6217TRPBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #3SK298Twicea Part #3639-375-3SK298 | Hitachi Ltd |
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CMPAK-4
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| Min.:1 Mult.:1 | - | YES | - | nickel-plated brass | 4 | SILICON | 1 | - | ring - cone; button - dome | - | MSOP8 | - | 2000 (50 Hz/1 min) V | 0.025 A | 1 g | - | HITACHI LTD | - | - | - | - | - | PWM controller | reel, | - | - | - | - | SMD | 19 mm | - | ≥200000 | 150 °C | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G4 | RECTANGULAR | SMALL OUTLINE | Transferred | - | IP65 | 45...85 % | - | - | - | OFF-ON with latching | 62*27.5*28/500 | - | - | PMIC | 0...70°C | - | - | EAR99 | - | - | DUAL | GULL WING | - | unknown | 0.5MHz | - | 4 | - | R-PDSO-G4 | Not Qualified | ≤50 mOhm | SINGLE | ≥1000 MOhm | - | DUAL GATE, DEPLETION MODE | 1A | SOURCE | GQ19 series vandal-resistant shortened button without backlight | AMPLIFIER | N-CHANNEL | -25…+55 °C | 2 A | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | 0.1 W | - | 0.04 pF | ULTRA HIGH FREQUENCY BAND | - | 12 dB | 2S (screw) | - | 22 mm | ||
| 3SK298 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #BUK9Y41-80ETwicea Part #554-375-BUK9Y41-80E | Nexperia |
Power Field-Effect Transistor, 24A I(D), 80V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235
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| 1500
In Stock
| Min.:1 Mult.:1 | - | YES | nickel-plated brass | - | 4 | SILICON | 1 | - | - | - | SOP8 | - | 2000 (50 Hz / 1 min) V | 24 A | 24.67 | flat ring and button | NEXPERIA | - | - | - | - | - | PWM controller | reel, | - | - | - | - | SMD | 19 mm | - | 200000 min | - | - | PLASTIC/EPOXY | PLASTIC, POWER, SOP-8, LFPAK56-4 | RECTANGULAR | SMALL OUTLINE | Active | - | IP65 | 45...85 % | Yes | - | - | OFF-ON with fixation | 62*27.5*28/300 | - | - | PMIC | 0...70°C | e3 | - | EAR99 | TIN | AVALANCHE RATED | SINGLE | GULL WING | 260 | not_compliant | 0.5MHz | 30 | - | AEC-Q101; IEC-60134 | R-PSSO-G4 | - | 50 mOhm max | SINGLE WITH BUILT-IN DIODE | 1000 MOhm min | - | ENHANCEMENT MODE | 1A | DRAIN | GQ19 series vandal proof button without illumination | SWITCHING | N-CHANNEL | -25…+55 °C | 2 A | MO-235 | 0.045 Ω | 96 A | 80 V | 25 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | 1 | - | 2NO | - | 22 mm | |
| BUK9Y41-80E | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #IRF7465TRPBFTwicea Part #3717-375-IRF7465TRPBF | International Rectifier |
Small Signal Field-Effect Transistor, 1.9A I(D), 150V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8
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| Min.:1 Mult.:1 | - | YES | - | - | 8 | SILICON | 1 | - | - | - | - | - | - | 1.9 A | - | - | INTERNATIONAL RECTIFIER CORP | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 150 °C | - | PLASTIC/EPOXY | SO-8 | RECTANGULAR | SMALL OUTLINE | Transferred | SOIC | - | - | Yes | - | - | - | - | - | - | - | - | e3 | Yes | EAR99 | MATTE TIN | - | DUAL | GULL WING | 260 | unknown | - | 30 | 8 | - | R-PDSO-G8 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | - | - | - | SWITCHING | N-CHANNEL | - | - | MS-012AA | 0.28 Ω | - | 150 V | - | METAL-OXIDE SEMICONDUCTOR | 2.5 W | - | - | - | 1 | - | - | - | - | ||
| IRF7465TRPBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #SI7232DN-T1-GE3Twicea Part #534-375-SI7232DN-T1-GE3 | Vishay Intertechnologies |
Power Field-Effect Transistor, 10A I(D), 20V, 0.0164ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8
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| 5000
In Stock
| Min.:1 Mult.:1 | 6 Weeks | YES | - | - | 6 | SILICON | 2 | - | - | - | - | - | - | 10 A | - | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 150 °C | - | UNSPECIFIED | HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8 | SQUARE | SMALL OUTLINE | Active | - | - | - | Yes | - | - | - | - | - | - | - | - | e3 | - | EAR99 | Matte Tin (Sn) | - | DUAL | C BEND | 260 | compliant | - | 30 | - | - | S-XDSO-C6 | Not Qualified | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | - | DRAIN | - | SWITCHING | N-CHANNEL | - | - | - | 0.0164 Ω | 40 A | 20 V | 11 mJ | METAL-OXIDE SEMICONDUCTOR | 23 W | - | - | - | 1 | - | - | - | - | |
| SI7232DN-T1-GE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #SI4840BDY-T1-GE3Twicea Part #534-375-SI4840BDY-T1-GE3 | Vishay Intertechnologies |
Small Signal Field-Effect Transistor, 19A I(D), 40V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, MS-012, SOIC-8
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| 300000
In Stock
| Min.:1 Mult.:1 | 17 Weeks, 4 Days | YES | - | - | 8 | SILICON | 1 | - | - | - | - | - | - | 19 A | - | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 150 °C | -55 °C | PLASTIC/EPOXY | MS-012, SOIC-8 | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | Yes | - | - | - | - | - | - | - | - | e3 | - | EAR99 | Matte Tin (Sn) | - | DUAL | GULL WING | 260 | not_compliant | - | 40 | - | - | R-PDSO-G8 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | - | - | - | SWITCHING | N-CHANNEL | - | - | MS-012AA | 0.009 Ω | - | 40 V | - | METAL-OXIDE SEMICONDUCTOR | 6 W | - | - | - | 1 | - | - | - | - | |
| SI4840BDY-T1-GE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #2SK1058Twicea Part #391-375-2SK1058 | Renesas Electronics Corporation |
Description: 7 A, 160 V, N-CHANNEL, Si, POWER, MOSFET, TO-3P, 3 PIN
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| Min.:1 Mult.:1 | - | NO | - | - | 3 | SILICON | 1 | - | - | - | SOW8 | 1997-08-01 | - | 7 A | 1 g | - | RENESAS ELECTRONICS CORP | - | - | - | - | 5kV | gate driver | reel, | - | - | - | - | SMD | - | - | - | - | - | PLASTIC/EPOXY | TO-3P, 3 PIN | RECTANGULAR | FLANGE MOUNT | Obsolete | TO-3P | - | - | No | - | - | - | - | - | - | driver | -40...125°C | e0 | No | EAR99 | TIN LEAD | - | SINGLE | THROUGH-HOLE | - | compliant | - | - | 3 | - | R-PSFM-T3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | 1 | ENHANCEMENT MODE | 10A | DRAIN | - | SWITCHING | N-CHANNEL | - | - | - | - | - | 160 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | - | ||
| 2SK1058 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #IRF630NTwicea Part #15969-375-IRF630N | Inchange Semiconductor Company Ltd |
Description: Transistor
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| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | INCHANGE SEMICONDUCTOR CO LTD | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Contact Manufacturer | - | - | - | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| IRF630N | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #IRF7904PBFTwicea Part #3717-375-IRF7904PBF | International Rectifier |
Power Field-Effect Transistor, 11A I(D), 30V, 10.8ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8
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| Min.:1 Mult.:1 | - | YES | - | - | 8 | SILICON | 2 | - | - | - | - | - | - | 11 A | - | - | INTERNATIONAL RECTIFIER CORP | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 150 °C | - | PLASTIC/EPOXY | LEAD FREE, SO-8 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOT | - | - | Yes | - | - | - | - | - | - | - | - | e3 | Yes | EAR99 | MATTE TIN | - | DUAL | GULL WING | 260 | compliant | - | 30 | 8 | - | R-PDSO-G8 | Not Qualified | - | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | - | - | - | - | N-CHANNEL | - | - | - | 10.8 Ω | 89 A | 30 V | 250 mJ | METAL-OXIDE SEMICONDUCTOR | 2 W | - | - | - | 1 | - | - | - | - | ||
| IRF7904PBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #SIHG44N65EF-GE3Twicea Part #534-375-SIHG44N65EF-GE3 | Vishay Intertechnologies |
Power Field-Effect Transistor, 46A I(D), 650V, 0.073ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
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| 60
In Stock
| Min.:1 Mult.:1 | 18 Weeks | NO | - | - | 3 | SILICON | 1 | - | - | - | - | 2016-05-10 | - | 46 A | - | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | PLASTIC/EPOXY | - | RECTANGULAR | FLANGE MOUNT | Active | - | - | - | Yes | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | SINGLE | THROUGH-HOLE | NOT SPECIFIED | compliant | - | NOT SPECIFIED | - | - | R-PSFM-T3 | - | - | SINGLE WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | - | - | - | SWITCHING | N-CHANNEL | - | - | TO-247AC | 0.073 Ω | 154 A | 650 V | 596 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | - | |
| SIHG44N65EF-GE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #SIA419DJ-T1-GE3Twicea Part #534-375-SIA419DJ-T1-GE3 | Vishay Intertechnologies |
Description: Power Field-Effect Transistor, 8.8A I(D), 20V, 0.03ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, SC-70, POWERPAK-6
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Compare
| 830
In Stock
| Min.:1 Mult.:1 | - | YES | - | - | 3 | SILICON | 1 | - | - | - | - | - | - | 8.8 A | - | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 150 °C | - | UNSPECIFIED | HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, SC-70, POWERPAK-6 | SQUARE | SMALL OUTLINE | Obsolete | - | - | - | Yes | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | DUAL | NO LEAD | 260 | unknown | - | 40 | - | - | S-XDSO-N3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | - | DRAIN | - | SWITCHING | P-CHANNEL | - | - | - | 0.03 Ω | 30 A | 20 V | - | METAL-OXIDE SEMICONDUCTOR | 19 W | - | - | - | - | - | - | - | - | |
| SIA419DJ-T1-GE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #SI7178DP-T1-GE3Twicea Part #534-375-SI7178DP-T1-GE3 | Vishay Intertechnologies |
Power Field-Effect Transistor, 14.9A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8
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| 1840
In Stock
| Min.:1 Mult.:1 | - | YES | - | - | 5 | SILICON | 1 | - | - | - | - | - | - | 14.9 A | - | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 150 °C | - | UNSPECIFIED | HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8 | RECTANGULAR | SMALL OUTLINE | Not Recommended | - | - | - | Yes | - | - | - | - | - | - | - | - | e3 | - | EAR99 | Matte Tin (Sn) | - | DUAL | C BEND | 260 | not_compliant | - | 40 | - | - | R-XDSO-C5 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | - | DRAIN | - | SWITCHING | N-CHANNEL | - | - | - | 0.014 Ω | 80 A | 100 V | 80 mJ | METAL-OXIDE SEMICONDUCTOR | 104 W | - | - | - | 1 | - | - | - | - | |
| SI7178DP-T1-GE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #IRF7105TRTwicea Part #376-375-IRF7105TR | Infineon Technologies AG |
Description: Power Field-Effect Transistor, 3.5A I(D), 25V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8
Datasheet
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| 783
In Stock
| Min.:1 Mult.:1 | - | YES | - | - | 8 | SILICON | 2 | - | - | - | - | - | - | 3.5 A | - | - | INFINEON TECHNOLOGIES AG | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 150 °C | - | PLASTIC/EPOXY | SO-8 | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | No | - | - | - | - | - | - | - | - | e3 | - | EAR99 | MATTE TIN | LOGIC LEVEL COMPATIBLE | DUAL | GULL WING | - | unknown | - | - | - | - | R-PDSO-G8 | Not Qualified | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | - | - | - | SWITCHING | N-CHANNEL AND P-CHANNEL | - | - | MS-012AA | 0.1 Ω | 14 A | 25 V | - | METAL-OXIDE SEMICONDUCTOR | 2 W | - | - | - | 2 | - | - | - | - | |
| IRF7105TR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #FSX017LGTwicea Part #16007-375-FSX017LG | SUMITOMO ELECTRIC Device Innovations Inc |
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE LG, 4 PIN
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| 8338
In Stock
| Min.:1 Mult.:1 | - | YES | - | - | 4 | GALLIUM ARSENIDE | 1 | - | - | - | - | - | - | - | - | - | EUDYNA DEVICES INC | - | - | - | - | - | - | - | - | - | - | CASE LG | - | - | - | - | - | - | CERAMIC, METAL-SEALED COFIRED | DISK BUTTON, O-CRDB-F4 | ROUND | DISK BUTTON | Transferred | - | - | - | Yes | - | - | - | - | - | - | - | - | - | Yes | EAR99 | - | HIGH RELIABILITY | RADIAL | FLAT | NOT SPECIFIED | unknown | - | NOT SPECIFIED | 4 | - | O-CRDB-F4 | Not Qualified | - | SINGLE | - | - | DEPLETION MODE | - | SOURCE | - | AMPLIFIER | N-CHANNEL | - | - | - | - | - | 8 V | - | JUNCTION | - | - | - | X BAND | - | - | - | - | - | |
| FSX017LG 16007-375-FSX017LG SUMITOMO ELECTRIC Device Innovations Inc
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In Stock :
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| | Mfr. Part #IRF7493TRPBFTwicea Part #3717-375-IRF7493TRPBF | International Rectifier |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Datasheet
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| 26000
In Stock
| Min.:1 Mult.:1 | - | YES | - | - | - | - | 1 | - | - | - | - | - | - | 9.3 A | 0.5 g | - | INTERNATIONAL RECTIFIER CORP | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 150 °C | - | - | - | - | - | Transferred | - | - | - | Yes | - | - | - | - | - | - | SRAM memory | - | e3 | Yes | EAR99 | MATTE TIN | - | - | - | 260 | unknown | - | 30 | - | - | - | - | - | SINGLE | - | - | ENHANCEMENT MODE | - | - | - | - | N-CHANNEL | - | - | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | 2.5 W | - | - | - | 1 | - | - | - | - | |
| IRF7493TRPBF |
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