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| Image | Part # | Manufacturer | Description | Availability | Pricing | Quantity | Surface Mount | Number of Terminals | Transistor Element Material | Drain Current-Max (ID) | Ihs Manufacturer | Manufacturer Package Code | Moisture Sensitivity Levels | Number of Elements | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Rohs Code | Transition Frequency-Nom (fT) | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Additional Feature | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | Reference Standard | JESD-30 Code | Qualification Status | Configuration | Operating Mode | Case Connection | Transistor Application | Polarity/Channel Type | JEDEC-95 Code | Drain-source On Resistance-Max | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | Power Dissipation-Max (Abs) | Collector Current-Max (IC) | DC Current Gain-Min (hFE) | Feedback Cap-Max (Crss) | Highest Frequency Band | Power Dissipation Ambient-Max |
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![]() | Mfr. Part #BS250Twicea Part #17802-375-BS250 | Temic Semiconductors |
Small Signal Field-Effect Transistor, 0.18A I(D), 45V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92-18RM, 3 PIN
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| Min.:1 Mult.:1 | NO | 3 | SILICON | 0.18 A | TEMIC SEMICONDUCTORS | - | - | 1 | - | - | PLASTIC/EPOXY | TO-92-18RM, 3 PIN | ROUND | CYLINDRICAL | Transferred | - | - | - | - | - | EAR99 | - | - | - | BOTTOM | WIRE | - | unknown | - | - | - | O-PBCY-W3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | P-CHANNEL | - | 14 Ω | - | 45 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | ||
| BS250 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #BS250Twicea Part #233-375-BS250 | Diodes Incorporated |
Description: Small Signal Field-Effect Transistor, 0.25A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, PLASTIC PACKAGE-3
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| 4000
In Stock
| Min.:1 Mult.:1 | NO | 3 | SILICON | 0.25 A | DIODES INC | - | - | 1 | 150 °C | - | PLASTIC/EPOXY | PLASTIC PACKAGE-3 | ROUND | CYLINDRICAL | Obsolete | TO-92 | No | - | e0 | - | EAR99 | TIN LEAD | - | - | BOTTOM | WIRE | - | unknown | - | 3 | - | O-PBCY-W3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | P-CHANNEL | TO-92 | 5 Ω | - | 60 V | - | METAL-OXIDE SEMICONDUCTOR | 0.83 W | - | - | - | - | - | |
| BS250 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #BS250Twicea Part #519-375-BS250 | TDK Micronas GmbH |
Small Signal Field-Effect Transistor, 0.25A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
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| Min.:1 Mult.:1 | NO | 3 | SILICON | 0.25 A | ITT SEMICONDUCTOR | - | - | 1 | 150 °C | - | PLASTIC/EPOXY | - | ROUND | CYLINDRICAL | Obsolete | - | No | - | e0 | - | EAR99 | TIN LEAD | - | - | BOTTOM | WIRE | - | unknown | - | - | - | O-PBCY-W3 | Not Qualified | SINGLE | ENHANCEMENT MODE | - | - | P-CHANNEL | TO-92 | 5 Ω | - | 60 V | - | METAL-OXIDE SEMICONDUCTOR | 0.83 W | - | - | - | - | - | ||
| BS250 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #BLF6G22LS-75Twicea Part #637-375-BLF6G22LS-75 | NXP Semiconductors |
TRANSISTOR S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-2, FET RF Power
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| Min.:1 Mult.:1 | YES | 2 | SILICON | 18 A | NXP SEMICONDUCTORS | - | - | 1 | - | - | CERAMIC, METAL-SEALED COFIRED | ROHS COMPLIANT, CERAMIC PACKAGE-2 | RECTANGULAR | FLATPACK | Obsolete | - | Yes | - | - | - | EAR99 | - | ESD PROTECTED | - | DUAL | FLAT | NOT SPECIFIED | unknown | NOT SPECIFIED | 2 | - | R-CDFP-F2 | Not Qualified | SINGLE | ENHANCEMENT MODE | SOURCE | AMPLIFIER | N-CHANNEL | - | - | - | 65 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | S BAND | - | ||
| BLF6G22LS-75 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #CSF501DTwicea Part #530-375-CSF501D | Wuxi China Resources Huajing Microelectronics Co |
Small Signal Field-Effect Transistor, 0.03A I(D), 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
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| Min.:1 Mult.:1 | YES | 3 | SILICON | 0.03 A | WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO | - | - | 1 | - | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G3 | RECTANGULAR | SMALL OUTLINE | Contact Manufacturer | - | - | - | - | - | EAR99 | - | - | - | DUAL | GULL WING | - | unknown | - | 3 | - | R-PDSO-G3 | - | SINGLE WITH BUILT-IN DIODE | DEPLETION MODE | - | - | N-CHANNEL | - | 800 Ω | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | ||
| CSF501D 530-375-CSF501D Wuxi China Resources Huajing Microelectronics Co
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![]() | Mfr. Part #2SK1590C-T1B-ATwicea Part #668-375-2SK1590C-T1B-A | Renesas Electronics Corporation |
Description: Power MOSFETs for Automotive, MM, /
Datasheet
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| 88888
In Stock
| Min.:1 Mult.:1 | - | - | - | - | RENESAS ELECTRONICS CORP | PLSP0003ZD | - | - | - | - | - | , | - | - | Obsolete | MM | Yes | - | e6 | Yes | EAR99 | TIN BISMUTH | - | - | - | - | - | compliant | - | 3 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
| 2SK1590C-T1B-A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #PMBFJ210Twicea Part #637-375-PMBFJ210 | NXP Semiconductors |
Description: TRANSISTOR 25 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, PLASTIC, SOT-23, 3 PIN, FET General Purpose Small Signal
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| Min.:1 Mult.:1 | YES | 3 | SILICON | - | NXP SEMICONDUCTORS | - | - | 1 | 150 °C | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G3 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOT-23 | - | - | e3 | - | EAR99 | TIN | - | - | DUAL | GULL WING | - | compliant | - | 3 | - | R-PDSO-G3 | Not Qualified | SINGLE | DEPLETION MODE | - | SWITCHING | N-CHANNEL | - | - | - | 25 V | - | JUNCTION | 0.25 W | - | - | - | - | - | ||
| PMBFJ210 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #PSMN1R0-40YLDTwicea Part #637-375-PSMN1R0-40YLD | NXP Semiconductors |
Description: TRANSISTOR POWER, FET, FET General Purpose Power
Datasheet
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| Min.:1 Mult.:1 | - | - | - | - | NXP SEMICONDUCTORS | - | - | - | - | - | - | - | - | - | Transferred | - | - | - | - | - | EAR99 | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| PSMN1R0-40YLD | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #TK90S06N1LTwicea Part #4669-375-TK90S06N1L | Toshiba America Electronic Components |
Description: Power MOSFET - Nch 30V<VDSS≤60V
Datasheet
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| 35000
In Stock
| Min.:1 Mult.:1 | YES | 2 | SILICON | 90 A | TOSHIBA CORP | - | - | 1 | 175 °C | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-G2 | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | - | - | EAR99 | - | - | - | SINGLE | GULL WING | - | unknown | - | - | AEC-Q101 | R-PSSO-G2 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | 0.0052 Ω | 180 A | 60 V | 95 mJ | METAL-OXIDE SEMICONDUCTOR | 157 W | - | - | 350 pF | - | - | |
| TK90S06N1L | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #PMPB20XPETwicea Part #637-375-PMPB20XPE | NXP Semiconductors |
7.2A, 20V, 0.0235ohm, P-CHANNEL, Si, POWER, MOSFET, 2 X 2 MM, 0.65 MM HEIGHT, LEADLESS, ULTRA THIN, PLASTIC, DFN2020MD-6, 6 PIN
Datasheet
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| Min.:1 Mult.:1 | YES | 6 | SILICON | 7.2 A | NXP SEMICONDUCTORS | - | 1 | 1 | - | - | PLASTIC/EPOXY | 2 X 2 MM, 0.65 MM HEIGHT, LEADLESS, ULTRA THIN, PLASTIC, DFN2020MD-6, 6 PIN | SQUARE | SMALL OUTLINE | Transferred | - | Yes | - | e3 | - | EAR99 | TIN | - | - | DUAL | NO LEAD | - | unknown | - | - | IEC-60134 | S-PDSO-N6 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | P-CHANNEL | - | 0.0235 Ω | 30 A | 20 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | ||
| PMPB20XPE | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #STU408DTwicea Part #530-375-STU408D | SamHop Microelectronics Corp. |
Description: Transistor
Datasheet
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| Min.:1 Mult.:1 | - | - | - | - | SAMHOP MICROELECTRONICS CORP | - | - | - | - | - | - | , | - | - | Contact Manufacturer | - | - | - | - | - | EAR99 | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| STU408D | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #ARF461DTwicea Part #530-375-ARF461D | Microsemi Corporation |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN
Datasheet
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| Min.:1 Mult.:1 | NO | 3 | - | 6.5 A | MICROSEMI CORP | - | - | 1 | 150 °C | - | PLASTIC/EPOXY | TO-247, 3 PIN | RECTANGULAR | FLANGE MOUNT | Transferred | TO-247AD | No | - | - | - | EAR99 | - | - | - | SINGLE | THROUGH-HOLE | - | unknown | - | 3 | - | R-PSFM-T3 | Not Qualified | SINGLE | - | - | - | N-CHANNEL | TO-247AD | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | 250 W | - | - | - | - | - | ||
| ARF461D | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #TIM1314-15ULTwicea Part #4669-375-TIM1314-15UL | Toshiba America Electronic Components |
TRANSISTOR KU BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-11C1B, 2 PIN, FET RF Power
Datasheet
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| Min.:1 Mult.:1 | YES | 2 | GALLIUM ARSENIDE | 11.4 A | TOSHIBA CORP | - | - | 1 | 175 °C | - | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F2 | RECTANGULAR | FLANGE MOUNT | End Of Life | - | - | - | - | - | EAR99 | - | - | 8541.29.00.95 | DUAL | FLAT | - | unknown | - | 2 | - | R-CDFM-F2 | - | SINGLE | DEPLETION MODE | SOURCE | AMPLIFIER | N-CHANNEL | - | - | - | 15 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | KU BAND | 60 W | ||
| TIM1314-15UL | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #TPCT4201Twicea Part #4669-375-TPCT4201 | Toshiba America Electronic Components |
Description: TRANSISTOR 6000 mA, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE PACKAGE-4, FET General Purpose Small Signal
Datasheet
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| 3827
In Stock
| Min.:1 Mult.:1 | YES | 4 | SILICON | 6 A | TOSHIBA CORP | - | - | 2 | 150 °C | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-F4 | RECTANGULAR | SMALL OUTLINE | Obsolete | - | No | - | - | Yes | EAR99 | - | - | - | DUAL | FLAT | NOT SPECIFIED | unknown | NOT SPECIFIED | 4 | - | R-PDSO-F4 | Not Qualified | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | N-CHANNEL | - | 0.049 Ω | - | 20 V | - | METAL-OXIDE SEMICONDUCTOR | 1.7 W | - | - | - | - | - | |
| TPCT4201 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #FF3MR12KM1Twicea Part #376-375-FF3MR12KM1 | Infineon Technologies AG |
Power Field-Effect Transistor,
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| 30
In Stock
| Min.:1 Mult.:1 | - | - | - | - | INFINEON TECHNOLOGIES AG | - | - | - | - | - | - | , | - | - | Obsolete | - | - | - | - | - | EAR99 | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
| FF3MR12KM1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #2N7002PTwicea Part #637-375-2N7002P | NXP Semiconductors |
Description: 360mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, PLASTIC PACKAGE-3
Datasheet
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| Min.:1 Mult.:1 | YES | 3 | SILICON | 0.36 A | NXP SEMICONDUCTORS | - | 1 | 1 | 150 °C | -55 °C | PLASTIC/EPOXY | PLASTIC PACKAGE-3 | RECTANGULAR | SMALL OUTLINE | Transferred | SOT-23 | Yes | - | e3 | - | EAR99 | Tin (Sn) | LOGIC LEVEL COMPATIBLE | - | DUAL | GULL WING | 260 | compliant | 30 | 3 | - | R-PDSO-G3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | TO-236AB | 1.6 Ω | - | 60 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | ||
| 2N7002P | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #NX7002AKTwicea Part #637-375-NX7002AK | NXP Semiconductors |
SMALL SIGNAL, FET
Datasheet
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| Min.:1 Mult.:1 | YES | 3 | SILICON | 0.19 A | NXP SEMICONDUCTORS | - | 1 | 1 | 150 °C | -55 °C | PLASTIC/EPOXY | PLASTIC PACKAGE-3 | RECTANGULAR | SMALL OUTLINE | Transferred | - | Yes | - | e3 | - | EAR99 | Tin (Sn) | - | - | DUAL | GULL WING | 260 | compliant | 30 | - | IEC-60134 | R-PDSO-G3 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | TO-236AB | 5.2 Ω | - | 60 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | ||
| NX7002AK | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #BC857BSTwicea Part #16059-375-BC857BS | Philips Semiconductors |
Transistor
Datasheet
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| 500
In Stock
| Min.:1 Mult.:1 | YES | - | - | - | PHILIPS SEMICONDUCTORS | - | - | - | 150 °C | - | - | - | - | - | Transferred | - | Yes | 100 MHz | e3 | - | EAR99 | MATTE TIN | - | - | - | - | 260 | unknown | - | - | - | - | - | - | - | - | - | PNP | - | - | - | - | - | - | - | 0.2 A | 200 | - | - | - | |
| BC857BS | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #2N5114Twicea Part #799-375-2N5114 | New Jersey Semiconductor Products Inc |
Trans JFET P-CH 30V 3-Pin TO-18
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| Min.:1 Mult.:1 | - | - | SILICON | - | NEW JERSEY SEMICONDUCTOR PRODUCTS INC | - | - | 1 | - | - | - | - | - | - | Active | - | - | - | - | - | EAR99 | - | - | - | - | - | - | unknown | - | - | - | - | - | SINGLE | DEPLETION MODE | - | - | P-CHANNEL | - | - | - | 30 V | - | JUNCTION | - | - | - | - | - | - | ||
| 2N5114 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #AP65SL130AWLTwicea Part #2957-375-AP65SL130AWL | Advanced Power Electronics Corp |
Description: Power Field-Effect Transistor
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| 19717
In Stock
| Min.:1 Mult.:1 | - | - | - | - | ADVANCED POWER ELECTRONICS CORP | - | - | - | - | - | - | , | - | - | Contact Manufacturer | - | Yes | - | - | - | EAR99 | - | - | - | - | - | NOT SPECIFIED | compliant | NOT SPECIFIED | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
| AP65SL130AWL |
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