NXP Semiconductors PMPB20XPE Specialized Transistors
PMPB20XPE
1964-375-PMPB20XPE
RoHS Compliant
7.2A, 20V, 0.0235ohm, P-CHANNEL, Si, POWER, MOSFET, 2 X 2 MM, 0.65 MM HEIGHT, LEADLESS, ULTRA THIN, PLASTIC, DFN2020MD-6, 6 PIN
In Stock Min. : 1
Mult. : 1
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PMPB20XPE Tech Specifications
pSemi PMPB20XPE technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Surface Mount | YES | |
| Number of Terminals | 6Terminals | |
| Transistor Element Material | SILICON | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Package Description | 2 X 2 MM, 0.65 MM HEIGHT, LEADLESS, ULTRA THIN, PLASTIC, DFN2020MD-6, 6 PIN | |
| Drain Current-Max (ID) | 7.2 A | |
| Moisture Sensitivity Levels | 1 | |
| Number of Elements | 1 Element | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| JESD-609 Code | e3 | |
| ECCN Code | EAR99 | |
| Terminal Finish | TIN | |
| Terminal Position | DUAL | |
| Terminal Form | NO LEAD | |
| Reach Compliance Code | unknown | |
| Reference Standard | IEC-60134 | |
| JESD-30 Code | S-PDSO-N6 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | P-CHANNEL | |
| Drain-source On Resistance-Max | 0.0235 Ω | |
| Pulsed Drain Current-Max (IDM) | 30 A | |
| DS Breakdown Voltage-Min | 20 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
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