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SIHG44N65EF-GE3 Tech Specifications

Vishay  SIHG44N65EF-GE3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Factory Lead Time 18 Weeks
Surface Mount NO
Number of Terminals 3Terminals
Transistor Element Material SILICON
Exterior Housing Material 1
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Date Of Intro 2016-05-10
Drain Current-Max (ID) 46 A
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
ECCN Code EAR99
Terminal Position SINGLE
Terminal Form THROUGH-HOLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
JEDEC-95 Code TO-247AC
Drain-source On Resistance-Max 0.073 Ω
Pulsed Drain Current-Max (IDM) 154 A
DS Breakdown Voltage-Min 650 V
Avalanche Energy Rating (Eas) 596 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
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SIHG44N65EF-GE3 Documents

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