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SI7178DP-T1-GE3 Tech Specifications
Vishay SI7178DP-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Surface Mount | YES | |
| Number of Terminals | 5Terminals | |
| Transistor Element Material | SILICON | |
| Exterior Housing Material | 1 | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8 | |
| Drain Current-Max (ID) | 14.9 A | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| JESD-609 Code | e3 | |
| ECCN Code | EAR99 | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Position | DUAL | |
| Terminal Form | C BEND | |
| Peak Reflow Temperature (Cel) | 260 | |
| Reach Compliance Code | not_compliant | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| JESD-30 Code | R-XDSO-C5 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| Drain-source On Resistance-Max | 0.014 Ω | |
| Pulsed Drain Current-Max (IDM) | 80 A | |
| DS Breakdown Voltage-Min | 100 V | |
| Avalanche Energy Rating (Eas) | 80 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 104 W | |
| Saturation Current | 1 |
SI7178DP-T1-GE3 Documents
Download datasheets and manufacturer documentation for SI7178DP-T1-GE3
- Datasheetsf94a3e40e35a553001575afa05bf9ca3.pdf
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