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SIA419DJ-T1-GE3 Tech Specifications

Vishay  SIA419DJ-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Surface Mount YES
Number of Terminals 3Terminals
Transistor Element Material SILICON
Exterior Housing Material 1
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, SC-70, POWERPAK-6
Drain Current-Max (ID) 8.8 A
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape SQUARE
Package Style SMALL OUTLINE
ECCN Code EAR99
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) 40
JESD-30 Code S-XDSO-N3
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Polarity/Channel Type P-CHANNEL
Drain-source On Resistance-Max 0.03 Ω
Pulsed Drain Current-Max (IDM) 30 A
DS Breakdown Voltage-Min 20 V
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 19 W
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SIA419DJ-T1-GE3 Documents

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