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| Image | Part # | Manufacturer | Description | Availability | Pricing | Quantity | Lifecycle Status | Mount | Mounting Type | Package / Case | Surface Mount | Number of Pins | Supplier Device Package | Weight | Number of Terminals | Transistor Element Material | Base Product Number | Collector- Emitter Voltage VCEO Max | Collector-Emitter Breakdown Voltage | Continuous Collector Current Ic Max | Current-Collector (Ic) (Max) | Factory Pack QuantityFactory Pack Quantity | Ihs Manufacturer | Manufacturer Part Number | Maximum Gate Emitter Voltage | Maximum Operating Temperature | Mfr | Minimum Operating Temperature | Mounting Styles | Number of Elements | Operating Temperature-Max | Package | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Pd - Power Dissipation | Product Status | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Schedule B | Test Conditions | Tradename | Turn-off Time-Nom (toff) | Turn-on Time-Nom (ton) | Unit Weight | Voltage Rating (DC) | Operating Temperature | Packaging | Series | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Current Rating | Pin Count | JESD-30 Code | Qualification Status | Configuration | Element Configuration | Power Dissipation | Case Connection | Input Type | Power - Max | Transistor Application | Polarity/Channel Type | Collector Emitter Voltage (VCEO) | Max Collector Current | Operating Temperature Range | Reverse Recovery Time | JEDEC-95 Code | Voltage - Collector Emitter Breakdown (Max) | Power Dissipation-Max (Abs) | Vce(on) (Max) @ Vge, Ic | Collector Current-Max (IC) | Continuous Collector Current | IGBT Type | Collector-Emitter Voltage-Max | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy | Gate-Emitter Voltage-Max | Gate-Emitter Thr Voltage-Max | Reverse Recovery Time (trr) | Height | Length | Width | Radiation Hardening | Lead Free |
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  | Mfr. Part #APT40GT60BRGTwicea Part #536-372-APT40GT60BRG | Microchip Technology |
IGBT Transistors FG, IGBT, 600V, 40A, TO-247, RoHSView in Development Tools Selector
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| 761
In Stock
| Min.:1 Mult.:1 | - | - | Through Hole | TO-247-3 | NO | - | TO-247 [B] | - | 3 | SILICON | APT40GT60 | 600 V | - | 80 A | 80 A | 1 | MICROSEMI CORP | APT40GT60BRG | - 20 V, + 20 V | + 150 C | Microchip Technology | - 55 C | Through Hole | 1 | 150 °C | Tube | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Active | TO-247 | 345 W | Active | NOT SPECIFIED | 1.24 | Details | Yes | - | 400V, 40A, 5Ohm, 15V | Thunderbolt IGBT | 353 ns | 63 ns | 1.340411 oz | - | -55°C ~ 150°C (TJ) | Tube | Thunderbolt IGBT® | e1 | Yes | EAR99 | TIN SILVER COPPER | - | - | AVALANCHE RATED | - | SINGLE | THROUGH-HOLE | NOT SPECIFIED | compliant | - | 3 | R-PSFM-T3 | Not Qualified | Single | - | - | COLLECTOR | Standard | 345 W | POWER CONTROL | N-CHANNEL | - | - | - 55 C to + 150 C | - | TO-247 | 600 V | - | 2.5V @ 15V, 40A | 80 A | 80 A | NPT | 600 V | 200 nC | 160 A | 12ns/124ns | 828µJ (off) | - | - | - | 5.31 mm | 21.46 mm | 16.26 mm | - | - | |
| APT40GT60BRG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #APT15GP60BDQ1GTwicea Part #536-372-APT15GP60BDQ1G | Microchip Technology |
IGBT Transistors FG, IGBT-COMBI, 600V, TO-247, RoHSView in Development Tools Selector
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| 12
In Stock
| Min.:1 Mult.:1 | - | - | Through Hole | TO-247-3 | - | - | TO-247 [B] | - | - | - | APT15GP60 | 600 V | - | - | 56 A | 1 | - | - | - 20 V, + 20 V | + 150 C | Microchip Technology | - 55 C | Through Hole | - | - | Tube | - | - | - | - | - | - | 250 W | Active | - | - | Details | - | - | 400V, 15A, 5Ohm, 15V | - | - | - | 0.208116 oz | - | -55°C ~ 150°C (TJ) | Tube | POWER MOS 7® | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Single | - | 250 | - | Standard | 250 W | - | - | - | - | - | - | - | 600 V | - | 2.7V @ 15V, 15A | - | 56 | PT | - | 55 nC | 65 A | 8ns/29ns | 130µJ (on), 120µJ (off) | - | - | - | - | - | - | - | - | |
| APT15GP60BDQ1G | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #APT35GP120BGTwicea Part #536-372-APT35GP120BG | Microchip Technology |
IGBT Transistors FG, IGBT, 1200V, 35A, TO-247, RoHSView in Development Tools Selector
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| 93
In Stock
| Min.:1 Mult.:1 | - | - | Through Hole | TO-247-3 | - | - | TO-247 [B] | - | - | - | APT35GP120 | 1.2 kV | - | - | 96 A | 1 | - | - | - 20 V, + 20 V | + 150 C | Microchip Technology | - 55 C | Through Hole | - | - | Tube | - | - | - | - | - | - | 543 W | Active | - | - | Details | - | - | 600V, 35A, 5Ohm, 15V | - | - | - | 1.340411 oz | - | -55°C ~ 150°C (TJ) | Tube | POWER MOS 7® | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Single | - | 543 | - | Standard | 543 W | - | - | - | - | - | - | - | 1200 V | - | 3.9V @ 15V, 35A | - | 96 | PT | - | 150 nC | 140 A | 16ns/94ns | 750µJ (on), 680µJ (off) | - | - | - | - | - | - | - | - | |
| APT35GP120BG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #APT75GN60LDQ3GTwicea Part #536-372-APT75GN60LDQ3G | Microchip Technology |
IGBT Transistors FG, IGBT, 600V, TO-264, RoHSView in Development Tools Selector
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| 45
In Stock
| Min.:1 Mult.:1 | - | - | Through Hole | TO-264-3 | - | - | TO-264 [L] | - | - | - | APT75GN60 | 600 V | - | 155 A | 155 A | 1 | - | - | - 30 V, + 30 V | + 175 C | Microchip Technology | - 55 C | Through Hole | - | - | Tube | - | - | - | - | - | - | 536 W | Active | - | - | Details | - | - | 400V, 75A, 1Ohm, 15V | - | - | - | 0.373904 oz | - | -55°C ~ 175°C (TJ) | Tube | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Single | - | - | - | Standard | 536 W | - | - | - | - | - 55 C to + 175 C | - | - | 600 V | - | 1.85V @ 15V, 75A | - | 155 A | Trench Field Stop | - | 485 nC | 225 A | 47ns/385ns | 2500µJ (on), 2140µJ (off) | - | - | - | 5.21 mm | 26.49 mm | 20.5 mm | - | - | |
| APT75GN60LDQ3G | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #APT65GP60B2GTwicea Part #536-372-APT65GP60B2G | Microchip Technology |
IGBT Transistors FG, IGBT, 600V, 65A, TO-247 T-MAX, RoHSView in Development Tools Selector
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| 133
In Stock
| Min.:1 Mult.:1 | - | - | Through Hole | TO-247-3 | - | - | - | - | - | - | APT65GP60 | 600 V | - | - | 100 A | 1 | - | - | - 20 V, + 20 V | + 150 C | Microchip Technology | - 55 C | Through Hole | - | - | Tube | - | - | - | - | - | - | 833 W | Active | - | - | Details | - | - | 400V, 65A, 5Ohm, 15V | - | - | - | 1.340411 oz | - | -55°C ~ 150°C (TJ) | Tube | POWER MOS 7® | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Single | - | - | - | Standard | 833 W | - | - | - | - | - | - | - | 600 V | - | 2.7V @ 15V, 65A | - | - | PT | - | 210 nC | 250 A | 30ns/91ns | 605µJ (on), 896µJ (off) | - | - | - | - | - | - | - | - | |
| APT65GP60B2G | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #APT13GP120BGTwicea Part #536-372-APT13GP120BG | Microchip Technology |
IGBT Transistors FG, IGBT, 1200V, 13A, TO-247, RoHSView in Development Tools Selector
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| 8
In Stock
| Min.:1 Mult.:1 | - | - | Through Hole | TO-247-3 | - | - | TO-247 [B] | - | - | - | APT13GP120 | 1.2 kV | - | - | 41 A | 1 | - | - | - 30 V, + 30 V | + 150 C | Microchip Technology | - 55 C | Through Hole | - | - | Tube | - | - | - | - | - | - | 250 W | Active | - | - | Details | - | - | 600V, 13A, 5Ohm, 15V | - | - | - | 0.208116 oz | - | -55°C ~ 150°C (TJ) | Tube | POWER MOS 7® | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Single | - | 250 | - | Standard | 250 W | - | - | - | - | - | - | - | 1200 V | - | 3.9V @ 15V, 13A | - | 41 | PT | - | 55 nC | 50 A | 9ns/28ns | 115µJ (on), 165µJ (off) | - | - | - | - | - | - | - | - | |
| APT13GP120BG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #APT35GP120B2DQ2GTwicea Part #536-372-APT35GP120B2DQ2G | Microchip Technology |
IGBT Transistors FG, IGBT-COMBI, 1200V, TO-247 T-MAX, RoHSView in Development Tools Selector
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| 76
In Stock
| Min.:1 Mult.:1 | Production (Last Updated: 2 months ago) | Through Hole | Through Hole | TO-247-3 | - | 3 | - | - | - | - | APT35GP120 | - | 1.2 kV | - | 96 A | 1 | - | - | - | - | Microchip Technology | - | Through Hole | - | - | Tube | - | - | - | - | - | - | - | Active | - | - | Details | - | 8541290080/8541290080 | 600V, 35A, 4.3Ohm, 15V | - | - | - | 1.340411 oz | 1.2 kV | -55°C ~ 150°C (TJ) | Tube | POWER MOS 7® | - | - | - | - | 150 °C | -55 °C | - | 543 W | - | - | - | - | 96 A | - | - | - | - | Single | - | - | Standard | 543 W | - | - | 1.2 kV | 96 A | - | - | - | 1200 V | - | 3.9V @ 15V, 35A | - | - | PT | - | 150 nC | 140 A | 16ns/95ns | 750µJ (on), 680µJ (off) | - | - | - | - | - | - | No | Lead Free | |
| APT35GP120B2DQ2G | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #APT15GN120BDQ1GTwicea Part #536-372-APT15GN120BDQ1G | Microchip Technology |
IGBT Transistors FG, IGBT, 1200V, TO-247, RoHSView in Development Tools Selector
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| 8
In Stock
| Min.:1 Mult.:1 | - | - | Through Hole | TO-247-3 | - | - | TO-247 [B] | - | - | - | APT15GN120 | 1.2 kV | - | - | 45 A | 1 | - | - | - 30 V, + 30 V | + 150 C | Microchip Technology | - 55 C | Through Hole | - | - | Tube | - | - | - | - | - | - | 195 W | Active | - | - | Details | - | - | 800V, 15A, 4.3Ohm, 15V | - | - | - | 0.208116 oz | - | -55°C ~ 150°C (TJ) | Tube | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Single | - | - | - | Standard | 195 W | - | - | - | - | - | - | - | 1200 V | - | 2.1V @ 15V, 15A | - | - | Trench Field Stop | - | 90 nC | 45 A | 10ns/150ns | 410µJ (on), 950µJ (off) | - | - | - | - | - | - | - | - | |
| APT15GN120BDQ1G | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #APT50GF120LRGTwicea Part #536-372-APT50GF120LRG | Microchip Technology |
IGBT Transistors FG, IGBT, 1200V, 50A, TO-264, RoHSView in Development Tools Selector
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| 76
In Stock
| Min.:1 Mult.:1 | - | - | Through Hole | TO-264-3 | - | - | TO-264 [L] | - | - | - | APT50GF120 | 1.2 kV | - | - | 135 A | 1 | - | - | - 30 V, + 30 V | + 150 C | Microchip Technology | - 55 C | Through Hole | - | - | Tube | - | - | - | - | - | - | 781 W | Active | - | - | Details | - | - | 800V, 50A, 1Ohm, 15V | - | - | - | 0.352740 oz | - | -55°C ~ 150°C (TJ) | Tube | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Single | - | - | - | Standard | 781 W | - | - | - | - | - | - | - | 1200 V | - | 3V @ 15V, 50A | - | - | NPT | - | 340 nC | 150 A | 25ns/260ns | 3.6mJ (on), 2.64mJ (off) | - | - | - | - | - | - | - | - | |
| APT50GF120LRG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #APT50GN60BDQ2GTwicea Part #536-372-APT50GN60BDQ2G | Microchip Technology |
IGBT Transistors FG, IGBT-COMBI, 600V, TO-247, RoHSView in Development Tools Selector
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| 45
In Stock
| Min.:1 Mult.:1 | - | - | Through Hole | TO-247-3 | - | - | TO-247 [B] | - | - | - | APT50GN60 | 600 V | - | 107 A | 107 A | 1 | - | - | - 30 V, + 30 V | + 175 C | Microchip Technology | - 55 C | Through Hole | - | - | Tube | - | - | - | - | - | - | 366 W | Active | - | - | Details | - | - | 400V, 50A, 4.3Ohm, 15V | - | - | - | 1.340411 oz | - | -55°C ~ 175°C (TJ) | Tube | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Single | - | 366 | - | Standard | 366 W | - | - | - | - | - 55 C to + 175 C | - | - | 600 V | - | 1.85V @ 15V, 50A | - | 107 A | Trench Field Stop | - | 325 nC | 150 A | 20ns/230ns | 1185µJ (on), 1565µJ (off) | - | - | - | 5.31 mm | 21.46 mm | 16.26 mm | - | - | |
| APT50GN60BDQ2G | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #APT75GN120LGTwicea Part #536-372-APT75GN120LG | Microchip Technology |
IGBT Transistors FG, IGBT, 1200V, TO-264, RoHSView in Development Tools Selector
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| 175
In Stock
| Min.:1 Mult.:1 | - | - | Through Hole | TO-264-3 | - | - | TO-264 [L] | - | - | - | APT75GN120 | 1.2 kV | - | 200 A | 200 A | 1 | - | - | - 30 V, + 30 V | + 150 C | Microchip Technology | - 55 C | Through Hole | - | - | Tube | - | - | - | - | - | - | 833 W | Active | - | - | Details | - | - | 800V, 75A, 1Ohm, 15V | - | - | - | 0.373904 oz | - | -55°C ~ 150°C (TJ) | Tube | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Single | - | 833 | - | Standard | 833 W | - | - | - | - | - 55 C to + 150 C | - | - | 1200 V | - | 2.1V @ 15V, 75A | - | 200 A | Trench Field Stop | - | 425 nC | 225 A | 60ns/620ns | 8620µJ (on), 11400µJ (off) | - | - | - | 5.21 mm | 26.49 mm | 20.5 mm | - | - | |
| APT75GN120LG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #APT80GA60LD40Twicea Part #536-372-APT80GA60LD40 | Microchip Technology |
IGBT Transistors FG, IGBT-COMBI, 600V, TO-264View in Development Tools Selector
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| 42
In Stock
| Min.:1 Mult.:1 | Production (Last Updated: 2 months ago) | Through Hole | Through Hole | TO-264-3 | NO | - | TO-264 | 10.6 g | 3 | SILICON | APT80GA60 | 600 V | 600 V | 143 A | 143 A | 1 | MICROSEMI CORP | APT80GA60LD40 | - 30 V, + 30 V | + 150 C | Microchip Technology | - 55 C | Through Hole | 1 | 150 °C | Tube | PLASTIC/EPOXY | ROHS COMPLIANT, TO-264, 3 PIN | RECTANGULAR | FLANGE MOUNT | Active | TO-264AA | 625 W | Active | NOT SPECIFIED | 2.25 | Details | Yes | 8541290080, 8541290080/8541290080, 8541290080/8541290080/8541290080/8541290080/8541290080 | 400V, 47A, 4.7Ohm, 15V | POWER MOS 8 | 326 ns | 52 ns | 0.373904 oz | - | -55°C ~ 150°C (TJ) | Tube | POWER MOS 8™ | e1 | Yes | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | 150 °C | -55 °C | LOW CONDUCTION LOSS | 625 W | SINGLE | THROUGH-HOLE | NOT SPECIFIED | unknown | - | 3 | R-PSFM-T3 | Not Qualified | Single | Single | 625 | COLLECTOR | Standard | 625 W | POWER CONTROL | N-CHANNEL | 600 V | 143 A | - 55 C to + 150 C | 22 ns | TO-264AA | 600 V | - | 2.5V @ 15V, 47A | 143 A | 143 A | PT | 600 V | 230 nC | 240 A | 23ns/158ns | 840µJ (on), 751µJ (off) | - | - | 22 ns | 5.21 mm | 26.49 mm | 20.5 mm | No | - | |
| APT80GA60LD40 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #APT80GA60BTwicea Part #536-372-APT80GA60B | Microchip Technology |
IGBT Transistors FG, IGBT, 600V, TO-247View in Development Tools Selector
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| Min.:1 Mult.:1 | - | - | Through Hole | TO-247-3 | - | - | TO-247 [B] | - | - | - | APT80GA60 | 600 V | - | 143 A | 143 A | 1 | - | - | - 20 V, + 20 V | + 150 C | Microchip Technology | - 55 C | Through Hole | - | - | Tube | - | - | - | - | - | - | 625 W | Active | - | - | Details | - | - | 400V, 47A, 4.7Ohm, 15V | POWER MOS 8 | - | - | 1.340411 oz | - | -55°C ~ 150°C (TJ) | Tube | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Single | - | - | - | Standard | 625 W | - | - | - | - | - 55 C to + 150 C | - | - | 600 V | - | 2.5V @ 15V, 47A | - | 143 A | PT | - | 230 nC | 240 A | 23ns/158ns | 840µJ (on), 751µJ (off) | - | - | - | 21.46 mm | 16.26 mm | 5.31 mm | - | - | ||
| APT80GA60B | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #APT54GA60BD30Twicea Part #536-372-APT54GA60BD30 | Microchip Technology |
IGBT Transistors FG, IGBT-COMBI, 600V, TO-247View in Development Tools Selector
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| 38
In Stock
| Min.:1 Mult.:1 | - | - | Through Hole | TO-247-3 | - | - | TO-247 [B] | - | - | - | APT54GA60 | 600 V | - | 96 A | 96 A | 1 | - | - | - 30 V, + 30 V | + 150 C | Microchip Technology | - 55 C | Through Hole | - | - | Tube | - | - | - | - | - | - | 416 W | Active | - | - | Details | - | - | 400V, 32A, 4.7Ohm, 15V | - | - | - | 1.340411 oz | - | -55°C ~ 150°C (TJ) | Tube | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Single | - | 416 | - | Standard | 416 W | - | - | - | - | - 55 C to + 150 C | - | - | 600 V | - | 2.5V @ 15V, 32A | - | 96 | PT | - | 28 nC | 161 A | 17ns/112ns | 534µJ (on), 466µJ (off) | - | - | - | 4.69 mm | 10.8 mm | 15.49 mm | - | - | |
| APT54GA60BD30 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #APT25GT120BRDQ2GTwicea Part #536-372-APT25GT120BRDQ2G | Microchip Technology |
IGBT Transistors FG, IGBT, 1200V, TO-247, RoHSView in Development Tools Selector
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| 165
In Stock
| Min.:1 Mult.:1 | Production (Last Updated: 2 months ago) | Through Hole | Through Hole | TO-247-3 | NO | - | TO-247 [B] | 38.000013 g | 3 | SILICON | APT25GT120 | 1.2 kV | 1.2 kV | 54 A | 54 A | 1 | MICROSEMI CORP | APT25GT120BRDQ2G | - 30 V, + 30 V | + 150 C | Microchip Technology | - 55 C | Through Hole | 1 | 150 °C | Tube | PLASTIC/EPOXY | ROHS COMPLIANT, TO-247, 3 PIN | RECTANGULAR | FLANGE MOUNT | Active | TO-247 | 347 W | Active | NOT SPECIFIED | 1.18 | Details | Yes | - | 800V, 25A, 5Ohm, 15V | Thunderbolt IGBT | 186 ns | 41 ns | 1.340411 oz | 1.2 kV | -55°C ~ 150°C (TJ) | Tube | Thunderbolt IGBT® | e1 | Yes | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | 150 °C | -55 °C | - | 347 W | SINGLE | THROUGH-HOLE | NOT SPECIFIED | unknown | 54 A | 3 | R-PSFM-T3 | Not Qualified | Single | Single | 347 | COLLECTOR | Standard | 347 W | POWER CONTROL | N-CHANNEL | 1.2 kV | 54 A | - 55 C to + 150 C | - | TO-247 | 1200 V | 347 W | 3.7V @ 15V, 25A | 54 A | 54 A | NPT | 1200 V | 170 nC | 75 A | 14ns/150ns | 930µJ (on), 720µJ (off) | 30 V | 6.5 V | - | 5.31 mm | 21.46 mm | 16.26 mm | No | Lead Free | |
| APT25GT120BRDQ2G | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #APT40GR120STwicea Part #536-372-APT40GR120S | Microchip Technology |
IGBT Transistors FG, IGBT, 1200V, 40A, TO-268View in Development Tools Selector
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| Min.:1 Mult.:1 | - | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | - | D3Pak | - | - | - | APT40GR120 | 1.2 kV | - | - | 88 A | 1 | - | - | - 30 V, + 30 V | + 150 C | Microchip Technology | - 55 C | SMD/SMT | - | - | Tube | - | - | - | - | - | - | 500 W | Active | - | - | Details | - | - | 600V, 40A, 4.3Ohm, 15V | - | - | - | 0.218699 oz | - | -55°C ~ 150°C (TJ) | Tube | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Single | - | 500 | - | Standard | 500 W | - | - | - | - | - | - | - | 1200 V | - | 3.2V @ 15V, 40A | - | 88 | NPT | - | 210 nC | 160 A | 22ns/163ns | 1.38mJ (on), 906µJ (off) | - | - | - | - | - | - | - | - | ||
| APT40GR120S | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #APT64GA90LD30Twicea Part #536-372-APT64GA90LD30 | Microchip Technology |
IGBT Transistors FG, IGBT-COMBI, 900V, TO-264View in Development Tools Selector
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| 8
In Stock
| Min.:1 Mult.:1 | Production (Last Updated: 2 months ago) | Through Hole | Through Hole | TO-264-3 | - | - | TO-264 [L] | 10.6 g | - | - | APT64GA90 | 900 V | 900 V | 117 A | 117 A | 1 | - | - | - 20 V, + 20 V | + 150 C | Microchip Technology | - 55 C | Through Hole | - | - | Tube | - | - | - | - | - | - | 500 W | Active | - | - | Details | - | - | 600V, 38A, 4.7Ohm, 15V | POWER MOS 8 | - | - | 0.373904 oz | - | -55°C ~ 150°C (TJ) | Tube | POWER MOS 8™ | - | - | - | - | 150 °C | -55 °C | - | 500 W | - | - | - | - | - | - | - | - | Single | Single | 500 | - | Standard | 500 W | - | - | 900 V | 117 A | - 55 C to + 150 C | - | - | 900 V | - | 3.1V @ 15V, 38A | - | 117 A | PT | - | 162 nC | 193 A | 18ns/131ns | 1192µJ (on), 1088µJ (off) | - | - | - | 5.21 mm | 26.49 mm | 20.5 mm | No | - | |
| APT64GA90LD30 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #APT50GN120L2DQ2GTwicea Part #536-372-APT50GN120L2DQ2G | Microchip Technology |
IGBT Transistors FG, IGBT-COMBI, 1200V, TO-264 MAX, RoHSView in Development Tools Selector
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| 29
In Stock
| Min.:1 Mult.:1 | - | - | Through Hole | TO-264-3 | - | - | - | - | - | - | APT50GN120 | 1.2 kV | - | 134 A | 134 A | 1 | - | - | - 20 V, + 20 V | + 150 C | Microchip Technology | - 55 C | Through Hole | - | - | Tube | - | - | - | - | - | - | 543 W | Active | - | - | Details | - | - | 800V, 50A, 2.2Ohm, 15V | - | - | - | 0.373904 oz | - | -55°C ~ 150°C (TJ) | Tube | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Single | - | 543 | - | Standard | 543 W | - | - | - | - | - 55 C to + 150 C | - | - | 1200 V | - | 2.1V @ 15V, 50A | - | 134 A | NPT, Trench Field Stop | - | 315 nC | 150 A | 28ns/320ns | 4495µJ (off) | - | - | - | 5.21 mm | 26.49 mm | 20.5 mm | - | - | |
| APT50GN120L2DQ2G | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #APT64GA90B2D30Twicea Part #536-372-APT64GA90B2D30 | Microchip Technology |
IGBT Transistors FG, IGBT-COMBI, 900V, TO-247 T-MAXView in Development Tools Selector
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| 10
In Stock
| Min.:1 Mult.:1 | Production (Last Updated: 2 months ago) | Through Hole | Through Hole | TO-247-3 Variant | - | - | - | - | - | - | APT64GA90 | - | 900 V | - | 117 A | 1 | - | - | - 20 V, + 20 V | - | Microchip Technology | - | - | - | - | Tube | - | - | - | - | - | - | - | Active | - | - | Details | - | - | 600V, 38A, 4.7Ohm, 15V | - | - | - | 0.283029 oz | - | -55°C ~ 150°C (TJ) | Tube | POWER MOS 8™ | - | - | - | - | 150 °C | -55 °C | - | 500 W | - | - | - | - | - | - | - | - | - | Single | 500 | - | Standard | 500 W | - | - | 900 V | 117 A | - | - | - | 900 V | - | 3.1V @ 15V, 38A | - | 117 | PT | - | 162 nC | 193 A | 18ns/131ns | 1192µJ (on), 1088µJ (off) | - | - | - | - | - | - | No | - | |
| APT64GA90B2D30 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #APT25GN120B2DQ2GTwicea Part #536-372-APT25GN120B2DQ2G | Microchip Technology |
IGBT Transistors FG, IGBT, 1200V, T-MAX, RoHSView in Development Tools Selector
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| Min.:1 Mult.:1 | - | - | Through Hole | TO-247-3 Variant | - | - | - | - | - | - | APT25GN120 | - | - | - | 67 A | 1 | - | - | - 30 V, + 30 V | - | Microchip Technology | - | - | - | - | Tube | - | - | - | - | - | - | - | Active | - | - | Details | - | - | 800V, 25A, 4.3Ohm, 15V | - | - | - | 0.208116 oz | - | -55°C ~ 150°C (TJ) | Tube | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 272 | - | Standard | 272 W | - | - | - | - | - | - | - | 1200 V | - | 2.1V @ 15V, 25A | - | 67 | NPT, Trench Field Stop | - | 155 nC | 75 A | 22ns/280ns | 2.15µJ (off) | - | - | - | - | - | - | - | - | ||
| APT25GN120B2DQ2G |
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