APT64GA90B2D30 Tech Specifications

Microchip  APT64GA90B2D30 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Lifecycle Status Production (Last Updated: 2 months ago)
Mounting Type Through Hole
Package / Case TO-247-3 Variant
Mount Through Hole
RoHS Details
Factory Pack QuantityFactory Pack Quantity 1
Unit Weight 0.283029 oz
Package Tube
Current-Collector (Ic) (Max) 117 A
Base Product Number APT64GA90
Mfr Microchip Technology
Product Status Active
Test Conditions 600V, 38A, 4.7Ohm, 15V
Collector-Emitter Breakdown Voltage 900 V
Maximum Gate Emitter Voltage - 20 V, + 20 V
Packaging Tube
Operating Temperature -55°C ~ 150°C (TJ)
Series POWER MOS 8™
Max Operating Temperature 150 °C
Min Operating Temperature -55 °C
Max Power Dissipation 500 W
Element Configuration Single
Power Dissipation 500
Input Type Standard
Power - Max 500 W
Collector Emitter Voltage (VCEO) 900 V
Max Collector Current 117 A
Voltage - Collector Emitter Breakdown (Max) 900 V
Vce(on) (Max) @ Vge, Ic 3.1V @ 15V, 38A
Continuous Collector Current 117
IGBT Type PT
Gate Charge 162 nC
Current - Collector Pulsed (Icm) 193 A
Td (on/off) @ 25°C 18ns/131ns
Switching Energy 1192µJ (on), 1088µJ (off)
Radiation Hardening No
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