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APT64GA90B2D30 Tech Specifications
Microchip APT64GA90B2D30 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
Lifecycle Status | Production (Last Updated: 2 months ago) | |
Mounting Type | Through Hole | |
Package / Case | TO-247-3 Variant | |
Mount | Through Hole | |
RoHS | Details | |
Factory Pack QuantityFactory Pack Quantity | 1 | |
Unit Weight | 0.283029 oz | |
Package | Tube | |
Current-Collector (Ic) (Max) | 117 A | |
Base Product Number | APT64GA90 | |
Mfr | Microchip Technology | |
Product Status | Active | |
Test Conditions | 600V, 38A, 4.7Ohm, 15V | |
Collector-Emitter Breakdown Voltage | 900 V | |
Maximum Gate Emitter Voltage | - 20 V, + 20 V | |
Packaging | Tube | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Series | POWER MOS 8™ | |
Max Operating Temperature | 150 °C | |
Min Operating Temperature | -55 °C | |
Max Power Dissipation | 500 W | |
Element Configuration | Single | |
Power Dissipation | 500 | |
Input Type | Standard | |
Power - Max | 500 W | |
Collector Emitter Voltage (VCEO) | 900 V | |
Max Collector Current | 117 A | |
Voltage - Collector Emitter Breakdown (Max) | 900 V | |
Vce(on) (Max) @ Vge, Ic | 3.1V @ 15V, 38A | |
Continuous Collector Current | 117 | |
IGBT Type | PT | |
Gate Charge | 162 nC | |
Current - Collector Pulsed (Icm) | 193 A | |
Td (on/off) @ 25°C | 18ns/131ns | |
Switching Energy | 1192µJ (on), 1088µJ (off) | |
Radiation Hardening | No |
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