APT50GN60BDQ2G Tech Specifications

Microchip  APT50GN60BDQ2G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Package / Case TO-247-3
Mounting Type Through Hole
Supplier Device Package TO-247 [B]
RoHS Details
Mounting Styles Through Hole
Collector- Emitter Voltage VCEO Max 600 V
Collector-Emitter Saturation Voltage 1.45 V
Maximum Gate Emitter Voltage - 30 V, + 30 V
Continuous Collector Current at 25 C 107 A
Pd - Power Dissipation 366 W
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Continuous Collector Current Ic Max 107 A
Gate-Emitter Leakage Current 600 nA
Factory Pack QuantityFactory Pack Quantity 1
Unit Weight 1.340411 oz
Package Tube
Current-Collector (Ic) (Max) 107 A
Base Product Number APT50GN60
Mfr Microchip Technology
Product Status Active
Test Conditions 400V, 50A, 4.3Ohm, 15V
Packaging Tube
Operating Temperature -55°C ~ 175°C (TJ)
Series -
Configuration Single
Power Dissipation 366
Input Type Standard
Power - Max 366 W
Operating Temperature Range - 55 C to + 175 C
Voltage - Collector Emitter Breakdown (Max) 600 V
Vce(on) (Max) @ Vge, Ic 1.85V @ 15V, 50A
Continuous Collector Current 107 A
IGBT Type Trench Field Stop
Gate Charge 325 nC
Current - Collector Pulsed (Icm) 150 A
Td (on/off) @ 25°C 20ns/230ns
Switching Energy 1185µJ (on), 1565µJ (off)
Height 5.31 mm
Length 21.46 mm
Width 16.26 mm
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