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APT80GA60LD40 Tech Specifications

Microchip  APT80GA60LD40 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Lifecycle Status Production (Last Updated: 2 months ago)
Package / Case TO-264-3
Mounting Type Through Hole
Mount Through Hole
Surface Mount NO
Supplier Device Package TO-264
Weight 10.6 g
Number of Terminals 3Terminals
Transistor Element Material SILICON
RoHS Details
Mounting Styles Through Hole
Collector- Emitter Voltage VCEO Max 600 V
Collector-Emitter Saturation Voltage 2 V
Maximum Gate Emitter Voltage - 30 V, + 30 V
Continuous Collector Current at 25 C 143 A
Pd - Power Dissipation 625 W
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Continuous Collector Current Ic Max 143 A
Gate-Emitter Leakage Current 100 nA
Factory Pack QuantityFactory Pack Quantity 1
Tradename POWER MOS 8
Unit Weight 0.373904 oz
Package Tube
Current-Collector (Ic) (Max) 143 A
Base Product Number APT80GA60
Mfr Microchip Technology
Product Status Active
Test Conditions 400V, 47A, 4.7Ohm, 15V
Schedule B 8541290080, 8541290080/8541290080, 8541290080/8541290080/8541290080/8541290080/8541290080
Collector-Emitter Breakdown Voltage 600 V
Package Description ROHS COMPLIANT, TO-264, 3 PIN
Package Style FLANGE MOUNT
Package Body Material PLASTIC/EPOXY
Turn-on Time-Nom (ton) 52 ns
Turn-off Time-Nom (toff) 326 ns
Reflow Temperature-Max (s) NOT SPECIFIED
Operating Temperature-Max 150 °C
Rohs Code Yes
Manufacturer Part Number APT80GA60LD40
Package Shape RECTANGULAR
Number of Elements 1 Element
Part Life Cycle Code Active
Ihs Manufacturer MICROSEMI CORP
Risk Rank 2.25
Part Package Code TO-264AA
Packaging Tube
Operating Temperature -55°C ~ 150°C (TJ)
Series POWER MOS 8™
JESD-609 Code e1
Pbfree Code Yes
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Max Operating Temperature 150 °C
Min Operating Temperature -55 °C
Additional Feature LOW CONDUCTION LOSS
Max Power Dissipation 625 W
Terminal Position SINGLE
Terminal Form THROUGH-HOLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Configuration Single
Element Configuration Single
Power Dissipation 625
Case Connection COLLECTOR
Input Type Standard
Power - Max 625 W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600 V
Max Collector Current 143 A
Operating Temperature Range - 55 C to + 150 C
Reverse Recovery Time 22 ns
JEDEC-95 Code TO-264AA
Voltage - Collector Emitter Breakdown (Max) 600 V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 47A
Collector Current-Max (IC) 143 A
Continuous Collector Current 143 A
IGBT Type PT
Collector-Emitter Voltage-Max 600 V
Gate Charge 230 nC
Current - Collector Pulsed (Icm) 240 A
Td (on/off) @ 25°C 23ns/158ns
Switching Energy 840µJ (on), 751µJ (off)
Reverse Recovery Time (trr) 22 ns
Height 5.21 mm
Length 26.49 mm
Width 20.5 mm
Radiation Hardening No
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