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APT50GN120L2DQ2G Tech Specifications
Microchip APT50GN120L2DQ2G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
Package / Case | TO-264-3 | |
Mounting Type | Through Hole | |
RoHS | Details | |
Mounting Styles | Through Hole | |
Collector- Emitter Voltage VCEO Max | 1.2 kV | |
Maximum Gate Emitter Voltage | - 20 V, + 20 V | |
Pd - Power Dissipation | 543 W | |
Minimum Operating Temperature | - 55 C | |
Maximum Operating Temperature | + 150 C | |
Continuous Collector Current Ic Max | 134 A | |
Factory Pack QuantityFactory Pack Quantity | 1 | |
Unit Weight | 0.373904 oz | |
Package | Tube | |
Current-Collector (Ic) (Max) | 134 A | |
Base Product Number | APT50GN120 | |
Mfr | Microchip Technology | |
Product Status | Active | |
Test Conditions | 800V, 50A, 2.2Ohm, 15V | |
Packaging | Tube | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Series | - | |
Configuration | Single | |
Power Dissipation | 543 | |
Input Type | Standard | |
Power - Max | 543 W | |
Operating Temperature Range | - 55 C to + 150 C | |
Voltage - Collector Emitter Breakdown (Max) | 1200 V | |
Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 50A | |
Continuous Collector Current | 134 A | |
IGBT Type | NPT, Trench Field Stop | |
Gate Charge | 315 nC | |
Current - Collector Pulsed (Icm) | 150 A | |
Td (on/off) @ 25°C | 28ns/320ns | |
Switching Energy | 4495µJ (off) | |
Height | 5.21 mm | |
Length | 26.49 mm | |
Width | 20.5 mm |
Index :
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