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Transistors - FETs, MOSFETs - Single

Image	Part #	Manufacturer	Description	Availability	Pricing	Quantity	Mounting Type	Package / Case	Surface Mount	Mounting Feature	Contact Shape	Shell Material	Supplier Device Package	Insert Material	Number of Terminals	Transistor Element Material	Base Product Number	Brand	Collector- Emitter Voltage VCEO Max	Contact Sizes	DC Collector/Base Gain hfe Min	Emitter- Base Voltage VEBO	Factory Pack QuantityFactory Pack Quantity	Id - Continuous Drain Current	Ihs Manufacturer	Manufacturer	Manufacturer Part Number	Maximum DC Collector Current	Maximum Operating Temperature	Mfr	Minimum Operating Temperature	Mounting Styles	Number of Elements	Operating Temperature-Max	Package	Package Body Material	Package Description	Package Shape	Package Style	Part Life Cycle Code	Pd - Power Dissipation	Product Status	Rds On - Drain-Source Resistance	Risk Rank	RoHS	Transistor Polarity	Transition Frequency-Nom (fT)	Unit Weight	Vds - Drain-Source Breakdown Voltage	Vgs - Gate-Source Voltage	Vgs th - Gate-Source Threshold Voltage	Operating Temperature	Packaging	Series	Size / Dimension	Tolerance	Number of Terminations	ECCN Code	Temperature Coefficient	Connector Type	Type	Resistance	Number of Positions	Composition	Power (Watts)	Fastening Type	Subcategory	Contact Type	Technology	Voltage - Supply	Terminal Position	Orientation	Terminal Form	Shielding	Ingress Protection	Reach Compliance Code	Shell Finish	Pin Count	Shell Size - Insert	Termination Style	JESD-30 Code	Qualification Status	Actuator Type	Operating Frequency	Housing Color	Output Type	Failure Rate	Configuration	Note	Speed	Shell Size, MIL	Voltage - Forward (Vf) (Max) @ If	Output Power	Operating Temperature - Junction	Transistor Application	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Polarity/Channel Type	Product Type	Transistor Type	Includes	Gain	Capacitance @ Vr, F	Built in Switch	Encoder Type	Power Dissipation-Max (Abs)	Detent	Pulses per Revolution	Collector Current-Max (IC)	DC Current Gain-Min (hFE)	Rotational Life (Cycles Min)	Continuous Collector Current	Collector-Emitter Voltage-Max	Highest Frequency Band	Reverse Recovery Time (trr)	Collector-Base Capacitance-Max	Features	Product Category	Height Seated (Max)	Material Flammability Rating	Ratings

Image	Part #	Manufacturer	Description	Quantity	Mounting Type	Package / Case	Surface Mount	Mounting Feature	Contact Shape	Shell Material	Supplier Device Package	Insert Material	Number of Terminals	Transistor Element Material	Base Product Number	Brand	Collector- Emitter Voltage VCEO Max	Contact Sizes	DC Collector/Base Gain hfe Min	Emitter- Base Voltage VEBO	Factory Pack QuantityFactory Pack Quantity	Id - Continuous Drain Current	Ihs Manufacturer	Manufacturer	Manufacturer Part Number	Maximum DC Collector Current	Maximum Operating Temperature	Mfr	Minimum Operating Temperature	Mounting Styles	Number of Elements	Operating Temperature-Max	Package	Package Body Material	Package Description	Package Shape	Package Style	Part Life Cycle Code	Pd - Power Dissipation	Product Status	Rds On - Drain-Source Resistance	Risk Rank	RoHS	Transistor Polarity	Transition Frequency-Nom (fT)	Unit Weight	Vds - Drain-Source Breakdown Voltage	Vgs - Gate-Source Voltage	Vgs th - Gate-Source Threshold Voltage	Operating Temperature	Packaging	Series	Size / Dimension	Tolerance	Number of Terminations	ECCN Code	Temperature Coefficient	Connector Type	Type	Resistance	Number of Positions	Composition	Power (Watts)	Fastening Type	Subcategory	Contact Type	Technology	Voltage - Supply	Terminal Position	Orientation	Terminal Form	Shielding	Ingress Protection	Reach Compliance Code	Shell Finish	Pin Count	Shell Size - Insert	Termination Style	JESD-30 Code	Qualification Status	Actuator Type	Operating Frequency	Housing Color	Output Type	Failure Rate	Configuration	Note	Speed	Shell Size, MIL	Voltage - Forward (Vf) (Max) @ If	Output Power	Operating Temperature - Junction	Transistor Application	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Polarity/Channel Type	Product Type	Transistor Type	Includes	Gain	Capacitance @ Vr, F	Built in Switch	Encoder Type	Power Dissipation-Max (Abs)	Detent	Pulses per Revolution	Collector Current-Max (IC)	DC Current Gain-Min (hFE)	Rotational Life (Cycles Min)	Continuous Collector Current	Collector-Emitter Voltage-Max	Highest Frequency Band	Reverse Recovery Time (trr)	Collector-Base Capacitance-Max	Features	Product Category	Height Seated (Max)	Material Flammability Rating	Ratings
	Mfr. Part # BLW50F Twicea Part # 3044-369-BLW50F	Advanced	RF Bipolar Transistors RF Transistor Datasheet Compare	Min.:1 Mult.:1	-	SOT-123	NO	-	-	-	-	-	4	SILICON	-	Advanced Semiconductor, Inc.	55 V	-	19	4 V	1	-	ASI SEMICONDUCTOR INC	Advanced Semiconductor, Inc.	BLW50F	7.5 A	+ 200 C	PEI-Genesis	- 65 C	Screw Mount	-	200 °C	Bulk	CERAMIC, METAL-SEALED COFIRED	FLANGE MOUNT, O-CRFM-F4	ROUND	FLANGE MOUNT	Active	87 W	Active	-	4.35	Details	NPN	-	0.561650 oz	-	-	-	-	Tray	*	-	-	-	EAR99	-	-	RF Bipolar Power	-	-	-	-	-	Transistors	-	Si	-	RADIAL	-	FLAT	-	-	unknown	-	4	-	-	O-CRFM-F4	Not Qualified	-	30 MHz	-	-	-	Single	-	-	-	-	-	-	-	-	-	NPN	RF Bipolar Transistors	Bipolar Power	-	-	-	-	-	94 W	-	-	3.25 A	15	-	3.25 A	55 V	VERY HIGH FREQUENCY BAND	-	100 pF	-	RF Bipolar Transistors	-	-	-
BLW50F 3044-369-BLW50F Advanced RoHS : Package : - In Stock : - 1 : -
	Mfr. Part # BLX98 Twicea Part # 3044-369-BLX98	Advanced	RF Bipolar Transistors RF Transistor Datasheet Compare	Min.:1 Mult.:1	Free Hanging (In-Line)	-	-	-	Circular	Aluminum Alloy	-	Polychloroprene	-	-	KPSE	Advanced Semiconductor, Inc.	40 V	16 (4), 20 (8)	-	4 V	-	-	-	Advanced Semiconductor, Inc.	-	-	-	ITT Cannon, LLC	-	Through Hole	-	-	Bulk	-	-	-	-	-	5.3 W	Active	-	-	Details	NPN	-	-	-	-	-	-55°C ~ 125°C	Tray	KPSE	-	-	-	-	-	Plug Housing	For Female Sockets	-	12	-	-	Bayonet Lock	Transistors	Crimp	Si	-	-	N (Normal)	-	Shielded	Environment Resistant	-	Chromate over Cadmium	-	14-12	-	-	-	-	40 MHz to 860 MHz	Olive Drab	-	-	Single	Contacts Not Included	-	-	-	-	-	-	-	-	-	RF Bipolar Transistors	Bipolar Power	-	-	-	-	-	-	-	-	-	-	-	2 A	-	-	-	-	Backshell, Coupling Nut, Shrink Boot Adapter	RF Bipolar Transistors	-	-	-
BLX98 3044-369-BLX98 Advanced RoHS : Package : - In Stock : - 1 : -
	Mfr. Part # BLV33 Twicea Part # 3044-369-BLV33	Advanced	RF Bipolar Transistors RF Transistor Datasheet Compare	Min.:1 Mult.:1	Stud Mount	DO-203AB, DO-5, Stud	NO	-	-	-	DO-5	-	4	SILICON	-	Advanced Semiconductor, Inc.	33 V	-	15	4 V	-	-	ASI SEMICONDUCTOR INC	Advanced Semiconductor, Inc.	BLV33	20 A	+ 200 C	Microchip Technology	- 65 C	Through Hole	-	200 °C	Bulk	CERAMIC, METAL-SEALED COFIRED	POST/STUD MOUNT, O-CRPM-F4	ROUND	POST/STUD MOUNT	Active	132 W	Active	-	5.09	Details	NPN	750 MHz	-	-	-	-	-	Tray	-	-	-	-	EAR99	-	-	RF Bipolar Power	-	-	-	-	-	Transistors	-	Standard	-	RADIAL	-	FLAT	-	-	unknown	-	-	-	-	O-CRPM-F4	Not Qualified	-	224 MHz	-	-	-	Single	-	Fast Recovery =< 500ns, > 200mA (Io)	-	975 mV @ 70 A	-	175°C (Max)	AMPLIFIER	100 V	70A	NPN	RF Bipolar Transistors	Bipolar Power	-	-	300pF @ 10V, 1MHz	-	-	132 W	-	-	12.5 A	15	-	12.5 A	33 V	VERY HIGH FREQUENCY BAND	50 ns	-	-	RF Bipolar Transistors	-	-	-
BLV33 3044-369-BLV33 Advanced RoHS : Package : - In Stock : - 1 : -
	Mfr. Part # BLV20 Twicea Part # 3044-369-BLV20	Advanced	RF Bipolar Transistors RF Transistor Datasheet Compare	Min.:1 Mult.:1	-	01005 (0402 Metric)	NO	-	-	-	1005	-	4	SILICON	-	Advanced Semiconductor, Inc.	35 V	-	10	4 V	1	-	ASI SEMICONDUCTOR INC	Advanced Semiconductor, Inc.	BLV20	2.5 A	+ 200 C	Stackpole Electronics Inc	- 65 C	Screw Mount	-	200 °C	Bulk	CERAMIC, METAL-SEALED COFIRED	FLANGE MOUNT, O-CRFM-F4	ROUND	FLANGE MOUNT	Active	20 W	Active	-	4.35	Details	NPN	-	-	-	-	-	-55°C ~ 125°C	Tray	RMCF	0.016 L x 0.008 W (0.40mm x 0.20mm)	±1%	2	EAR99	±200ppm/°C	-	RF Bipolar Power	402 kOhms	-	Thick Film	0.03W, 1/32W	-	Transistors	-	Si	-	RADIAL	-	FLAT	-	-	unknown	-	4	-	-	O-CRFM-F4	Not Qualified	-	175 MHz	-	-	-	Single	-	-	-	-	-	-	AMPLIFIER	-	-	NPN	RF Bipolar Transistors	Bipolar Power	-	-	-	-	-	20 W	-	-	1 A	10	-	1 A	35 V	VERY HIGH FREQUENCY BAND	-	-	Automotive AEC-Q200	RF Bipolar Transistors	0.006 (0.15mm)	-	AEC-Q200
BLV20 3044-369-BLV20 Advanced RoHS : Package : - In Stock : - 1 : -
	Mfr. Part # MRF141 Twicea Part # 3044-369-MRF141	Advanced	RF MOSFET Transistors RF Transistor Datasheet Compare	Min.:1 Mult.:1	-	221-11-3	-	-	-	-	-	-	-	-	-	Advanced Semiconductor, Inc.	-	-	-	-	-	16 A	-	Advanced Semiconductor, Inc.	-	-	+ 200 C	-	- 65 C	SMD/SMT	-	-	-	-	-	-	-	-	300 W	-	5 mOhms	-	Details	N-Channel	-	-	65 V	40 V	5 V	-	Tray	-	-	-	-	-	-	-	-	-	-	-	-	-	MOSFETs	-	Si	-	-	-	-	-	-	-	-	-	-	-	-	-	-	175 MHz	-	-	-	Single	-	-	-	-	150 W	-	-	-	-	-	RF MOSFET Transistors	-	-	20 dB	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	RF MOSFET Transistors	-	-	-
MRF141 3044-369-MRF141 Advanced RoHS : Package : - In Stock : - 1 : -
	Mfr. Part # MRF5176 Twicea Part # 3044-369-MRF5176	Advanced	RF Bipolar Transistors RF Transistor Datasheet Compare	Min.:1 Mult.:1	-	Case244-04	NO	-	-	-	-	-	4	SILICON	-	Advanced Semiconductor, Inc.	33 V	-	10	4 V	-	-	ASI SEMICONDUCTOR INC	Advanced Semiconductor, Inc.	MRF5176	-	+ 200 C	-	- 65 C	Through Hole	1	200 °C	-	CERAMIC, METAL-SEALED COFIRED	POST/STUD MOUNT, O-CRPM-F4	ROUND	POST/STUD MOUNT	Active	30 W	-	-	5.13	Details	NPN	-	-	-	-	-	-	Tray	-	-	-	-	EAR99	-	-	RF Bipolar Power	-	-	-	-	-	Transistors	-	Si	-	RADIAL	-	FLAT	-	-	unknown	-	-	-	-	O-CRPM-F4	Not Qualified	-	400 MHz	-	-	-	SINGLE	-	-	-	-	-	-	AMPLIFIER	-	-	NPN	RF Bipolar Transistors	Bipolar Power	-	-	-	-	-	30 W	-	-	2 A	10	-	2 A	33 V	ULTRA HIGH FREQUENCY BAND	-	25 pF	-	RF Bipolar Transistors	-	-	-
MRF5176 3044-369-MRF5176 Advanced RoHS : Package : - In Stock : - 1 : -
	Mfr. Part # BLV21 Twicea Part # 3044-369-BLV21	Advanced	RF Bipolar Transistors RF Transistor Datasheet Compare	Min.:1 Mult.:1	-	SOT-123	NO	-	-	-	-	-	4	SILICON	-	Advanced Semiconductor, Inc.	35 V	-	5	4 V	1	-	ASI SEMICONDUCTOR INC	Advanced Semiconductor, Inc.	BLV21	-	+ 200 C	-	- 65 C	Screw Mount	-	200 °C	-	CERAMIC, METAL-SEALED COFIRED	FLANGE MOUNT, O-CRFM-F4	ROUND	FLANGE MOUNT	Active	36 W	-	-	5.08	Details	NPN	-	0.374172 oz	-	-	-	-	Tray	-	-	-	-	EAR99	-	-	RF Bipolar Power	-	-	-	-	-	Transistors	-	Si	-	RADIAL	-	FLAT	-	-	unknown	-	4	-	-	O-CRFM-F4	Not Qualified	-	175 MHz	-	-	-	Single	-	-	-	-	-	-	AMPLIFIER	-	-	NPN	RF Bipolar Transistors	Bipolar Power	-	-	-	-	-	36 W	-	-	1.75 A	10	-	1.75 A	35 V	VERY HIGH FREQUENCY BAND	-	50 pF	-	RF Bipolar Transistors	-	-	-
BLV21 3044-369-BLV21 Advanced RoHS : Package : - In Stock : - 1 : -
	Mfr. Part # BLV57 Twicea Part # 3044-369-BLV57	Advanced	RF Bipolar Transistors RF Transistor Datasheet Compare	Min.:1 Mult.:1	Panel Mount	SOT-161A	YES	-	-	-	-	-	8	SILICON	-	Advanced Semiconductor, Inc.	27 V	-	15	3.5 V	-	-	ASI SEMICONDUCTOR INC	Advanced Semiconductor, Inc.	BLV57	4 A	+ 200 C	Grayhill Inc.	- 65 C	Screw Mount	-	200 °C	Bulk	CERAMIC, METAL-SEALED COFIRED	FLANGE MOUNT, R-CDFM-F8	RECTANGULAR	FLANGE MOUNT	Active	77 W	Active	-	5.09	Details	NPN	2500 MHz	-	-	-	-	-	Tray	62VG	-	-	-	EAR99	-	-	RF Bipolar Power	-	-	-	-	-	Transistors	-	Si	3.175V ~ 3.425V	DUAL	User Selectable	FLAT	-	-	unknown	-	8	-	Cable with Connector	R-CDFM-F8	Not Qualified	1/4 Dia Flatted End	860 MHz	-	NPN - Open Collector, Quadrature, 2-Bit	-	Single	-	-	-	-	-	-	AMPLIFIER	-	-	NPN	RF Bipolar Transistors	Bipolar Power	-	-	-	Yes	Optical	77 W	Yes	-	2 A	15	1M	2 A	27 V	ULTRA HIGH FREQUENCY BAND	-	-	-	RF Bipolar Transistors	-	-	-
BLV57 3044-369-BLV57 Advanced RoHS : Package : - In Stock : - 1 : -

Discrete Semiconductor Products

Transistors - FETs, MOSFETs - Single definition: The field-effect transistor (FET) is a type of transistor which uses an electric field to control the flow of current. FETs are also known a... Transistors - FETs, MOSFETs - Single Product Listing: BLW50F,BLX98,BLV33,BLV20,MRF141.Discrete Semiconductor Products type:Diodes - Zener - Single(126889),Diodes - Rectifiers - Single(107990),Transistors - FETs, MOSFETs - Single(66871),Transistors - Bipolar (BJT) - Single(41289),Diodes - Bridge Rectifiers(23480) .Transistors - FETs, MOSFETs - Single has 8 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Twicea.

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