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BLV21 Tech Specifications

Advanced  BLV21 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Package / Case SOT-123
Surface Mount NO
Number of Terminals 4Terminals
Transistor Element Material SILICON
Emitter- Base Voltage VEBO 4 V
Pd - Power Dissipation 36 W
Transistor Polarity NPN
Maximum Operating Temperature + 200 C
DC Collector/Base Gain hfe Min 5
Unit Weight 0.374172 oz
Minimum Operating Temperature - 65 C
Factory Pack QuantityFactory Pack Quantity 1
Mounting Styles Screw Mount
Manufacturer Advanced Semiconductor, Inc.
Brand Advanced Semiconductor, Inc.
RoHS Details
Collector- Emitter Voltage VCEO Max 35 V
Package Description FLANGE MOUNT, O-CRFM-F4
Package Style FLANGE MOUNT
Package Body Material CERAMIC, METAL-SEALED COFIRED
Operating Temperature-Max 200 °C
Manufacturer Part Number BLV21
Package Shape ROUND
Part Life Cycle Code Active
Ihs Manufacturer ASI SEMICONDUCTOR INC
Risk Rank 5.08
Packaging Tray
ECCN Code EAR99
Type RF Bipolar Power
Subcategory Transistors
Technology Si
Terminal Position RADIAL
Terminal Form FLAT
Reach Compliance Code unknown
Pin Count 4
JESD-30 Code O-CRFM-F4
Qualification Status Not Qualified
Operating Frequency 175 MHz
Configuration Single
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Product Type RF Bipolar Transistors
Transistor Type Bipolar Power
Power Dissipation-Max (Abs) 36 W
Collector Current-Max (IC) 1.75 A
DC Current Gain-Min (hFE) 10
Continuous Collector Current 1.75 A
Collector-Emitter Voltage-Max 35 V
Highest Frequency Band VERY HIGH FREQUENCY BAND
Collector-Base Capacitance-Max 50 pF
Product Category RF Bipolar Transistors
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