Advanced BLV20 Single MOSFETs Transistors
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BLV20 Tech Specifications
Advanced BLV20 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Package / Case | 01005 (0402 Metric) | |
| Surface Mount | NO | |
| Supplier Device Package | 1005 | |
| Number of Terminals | 4Terminals | |
| Transistor Element Material | SILICON | |
| Product Status | Active | |
| Mfr | Stackpole Electronics Inc | |
| Package | Bulk | |
| Collector- Emitter Voltage VCEO Max | 35 V | |
| RoHS | Details | |
| Maximum DC Collector Current | 2.5 A | |
| Brand | Advanced Semiconductor, Inc. | |
| Manufacturer | Advanced Semiconductor, Inc. | |
| Mounting Styles | Screw Mount | |
| Factory Pack QuantityFactory Pack Quantity | 1 | |
| Minimum Operating Temperature | - 65 C | |
| DC Collector/Base Gain hfe Min | 10 | |
| Maximum Operating Temperature | + 200 C | |
| Transistor Polarity | NPN | |
| Pd - Power Dissipation | 20 W | |
| Emitter- Base Voltage VEBO | 4 V | |
| Package Description | FLANGE MOUNT, O-CRFM-F4 | |
| Package Style | FLANGE MOUNT | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Operating Temperature-Max | 200 °C | |
| Manufacturer Part Number | BLV20 | |
| Package Shape | ROUND | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ASI SEMICONDUCTOR INC | |
| Risk Rank | 4.35 | |
| Series | RMCF | |
| Operating Temperature | -55°C ~ 125°C | |
| Packaging | Tray | |
| Size / Dimension | 0.016 L x 0.008 W (0.40mm x 0.20mm) | |
| Tolerance | ±1% | |
| Number of Terminations | 2Terminations | |
| ECCN Code | EAR99 | |
| Temperature Coefficient | ±200ppm/°C | |
| Type | RF Bipolar Power | |
| Resistance | 402 kOhms | |
| Composition | Thick Film | |
| Power (Watts) | 0.03W, 1/32W | |
| Subcategory | Transistors | |
| Technology | Si | |
| Terminal Position | RADIAL | |
| Terminal Form | FLAT | |
| Reach Compliance Code | unknown | |
| Pin Count | 4 | |
| JESD-30 Code | O-CRFM-F4 | |
| Qualification Status | Not Qualified | |
| Operating Frequency | 175 MHz | |
| Failure Rate | - | |
| Configuration | Single | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | NPN | |
| Product Type | RF Bipolar Transistors | |
| Transistor Type | Bipolar Power | |
| Power Dissipation-Max (Abs) | 20 W | |
| Collector Current-Max (IC) | 1 A | |
| DC Current Gain-Min (hFE) | 10 | |
| Continuous Collector Current | 1 A | |
| Collector-Emitter Voltage-Max | 35 V | |
| Highest Frequency Band | VERY HIGH FREQUENCY BAND | |
| Features | Automotive AEC-Q200 | |
| Product Category | RF Bipolar Transistors | |
| Height Seated (Max) | 0.006 (0.15mm) | |
| Ratings | AEC-Q200 |
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