Advanced BLW50F Single MOSFETs Transistors
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BLW50F Tech Specifications
Advanced BLW50F technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Package / Case | SOT-123 | |
| Surface Mount | NO | |
| Number of Terminals | 4Terminals | |
| Transistor Element Material | SILICON | |
| Package | Bulk | |
| Mfr | PEI-Genesis | |
| Product Status | Active | |
| Emitter- Base Voltage VEBO | 4 V | |
| Pd - Power Dissipation | 87 W | |
| Transistor Polarity | NPN | |
| Maximum Operating Temperature | + 200 C | |
| DC Collector/Base Gain hfe Min | 19 | |
| Unit Weight | 0.561650 oz | |
| Minimum Operating Temperature | - 65 C | |
| Factory Pack QuantityFactory Pack Quantity | 1 | |
| Mounting Styles | Screw Mount | |
| Manufacturer | Advanced Semiconductor, Inc. | |
| Brand | Advanced Semiconductor, Inc. | |
| Maximum DC Collector Current | 7.5 A | |
| RoHS | Details | |
| Collector- Emitter Voltage VCEO Max | 55 V | |
| Risk Rank | 4.35 | |
| Ihs Manufacturer | ASI SEMICONDUCTOR INC | |
| Part Life Cycle Code | Active | |
| Package Shape | ROUND | |
| Manufacturer Part Number | BLW50F | |
| Operating Temperature-Max | 200 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Style | FLANGE MOUNT | |
| Package Description | FLANGE MOUNT, O-CRFM-F4 | |
| Series | * | |
| Packaging | Tray | |
| ECCN Code | EAR99 | |
| Type | RF Bipolar Power | |
| Subcategory | Transistors | |
| Technology | Si | |
| Terminal Position | RADIAL | |
| Terminal Form | FLAT | |
| Reach Compliance Code | unknown | |
| Pin Count | 4 | |
| JESD-30 Code | O-CRFM-F4 | |
| Qualification Status | Not Qualified | |
| Operating Frequency | 30 MHz | |
| Configuration | Single | |
| Polarity/Channel Type | NPN | |
| Product Type | RF Bipolar Transistors | |
| Transistor Type | Bipolar Power | |
| Power Dissipation-Max (Abs) | 94 W | |
| Collector Current-Max (IC) | 3.25 A | |
| DC Current Gain-Min (hFE) | 15 | |
| Continuous Collector Current | 3.25 A | |
| Collector-Emitter Voltage-Max | 55 V | |
| Highest Frequency Band | VERY HIGH FREQUENCY BAND | |
| Collector-Base Capacitance-Max | 100 pF | |
| Product Category | RF Bipolar Transistors |
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