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  • Transistors - IGBTs - Single
Image Part # Manufacturer Description Availability Pricing Quantity Contact platingSurface MountNumber of pinsNumber of TerminalsTransistor Element MaterialExterior Housing MaterialConnectorConnector pinout layoutContacts pitchElectrical mountingGross weightIhs ManufacturerKind of connectorNumber of ElementsOperating Temperature-MaxPackage Body MaterialPackage DescriptionPackage ShapePackage StylePart Life Cycle CodePart Package CodeRow pitchSpatial orientationTurn-off Time-Nom (toff)Turn-on Time-Nom (ton)Type of connectorOperating temperatureECCN CodeAdditional FeatureTerminal PositionTerminal FormReach Compliance CodeCurrent ratingPin CountJESD-30 CodeQualification StatusConfigurationCase ConnectionTransistor ApplicationPolarity/Channel TypeJEDEC-95 CodePower Dissipation-Max (Abs)Collector Current-Max (IC)Rated voltageCollector-Emitter Voltage-MaxGate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxProfileFall Time-Max (tf)Plating thicknessFlammability rating
Image Part # Manufacturer Description Availability Pricing Quantity Contact platingSurface MountNumber of pinsNumber of TerminalsTransistor Element MaterialExterior Housing MaterialConnectorConnector pinout layoutContacts pitchElectrical mountingGross weightIhs ManufacturerKind of connectorNumber of ElementsOperating Temperature-MaxPackage Body MaterialPackage DescriptionPackage ShapePackage StylePart Life Cycle CodePart Package CodeRow pitchSpatial orientationTurn-off Time-Nom (toff)Turn-on Time-Nom (ton)Type of connectorOperating temperatureECCN CodeAdditional FeatureTerminal PositionTerminal FormReach Compliance CodeCurrent ratingPin CountJESD-30 CodeQualification StatusConfigurationCase ConnectionTransistor ApplicationPolarity/Channel TypeJEDEC-95 CodePower Dissipation-Max (Abs)Collector Current-Max (IC)Rated voltageCollector-Emitter Voltage-MaxGate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxProfileFall Time-Max (tf)Plating thicknessFlammability rating
Samsung Semiconductor SGP13N60UF
Mfr. Part #
SGP13N60UF
Twicea Part #
700-372-SGP13N60UF
Samsung Semiconductor
Insulated Gate Bipolar Transistor
Datasheet Compare
    Min.:1
    Mult.:1
    - NO - 3 SILICON - - - - - - SAMSUNG SEMICONDUCTOR INC - 1 150 °C PLASTIC/EPOXY FLANGE MOUNT, R-PSFM-T3 RECTANGULAR FLANGE MOUNT Obsolete SFM - - 160 ns 41 ns - - EAR99 HIGH SPEED SWITCHING SINGLE THROUGH-HOLE unknown - 3 R-PSFM-T3 Not Qualified SINGLE - MOTOR CONTROL N-CHANNEL TO-220 60 W 13 A - 600 V 20 V 7.5 V - 280 ns - -
    SGP13N60UF
    SGP13N60UF

    700-372-SGP13N60UF Samsung Semiconductor
    RoHS :
    Package : -
    In Stock : -
    1 : -
    Samsung Semiconductor SGL40N150D
    Mfr. Part #
    SGL40N150D
    Twicea Part #
    700-372-SGL40N150D
    Samsung Semiconductor
    Insulated Gate Bipolar Transistor
    Datasheet Compare
      Min.:1
      Mult.:1
      - NO - 3 SILICON - - - - - - SAMSUNG SEMICONDUCTOR INC - 1 150 °C PLASTIC/EPOXY FLANGE MOUNT, R-PSFM-T3 RECTANGULAR FLANGE MOUNT Obsolete TO-264 - - 680 ns 1300 ns - - EAR99 HIGH SPEED SWITCHING SINGLE THROUGH-HOLE unknown - 3 R-PSFM-T3 Not Qualified SINGLE WITH BUILT-IN DIODE ISOLATED POWER CONTROL N-CHANNEL TO-264 - 40 A - 1500 V - - - - - -
      SGL40N150D
      SGL40N150D

      700-372-SGL40N150D Samsung Semiconductor
      RoHS :
      Package : -
      In Stock : -
      1 : -
      Samsung Semiconductor SGH80N60UFD
      Mfr. Part #
      SGH80N60UFD
      Twicea Part #
      700-372-SGH80N60UFD
      Samsung Semiconductor
      Insulated Gate Bipolar Transistor
      Datasheet Compare
        Min.:1
        Mult.:1
        - NO - 3 SILICON 1 - - - - - SAMSUNG SEMICONDUCTOR INC - - 150 °C PLASTIC/EPOXY FLANGE MOUNT, R-PSFM-T3 RECTANGULAR FLANGE MOUNT Obsolete TO-3P - - 167 ns 50 ns - - EAR99 HIGH SPEED SWITCHING SINGLE THROUGH-HOLE unknown - 2 R-PSFM-T3 Not Qualified SINGLE WITH BUILT-IN DIODE - MOTOR CONTROL N-CHANNEL - 200 W 80 A - 600 V 20 V 7.5 V - 280 ns - -
        SGH80N60UFD
        SGH80N60UFD

        700-372-SGH80N60UFD Samsung Semiconductor
        RoHS :
        Package : -
        In Stock : -
        1 : -
        Samsung Semiconductor SGH30N60RUF
        Mfr. Part #
        SGH30N60RUF
        Twicea Part #
        700-372-SGH30N60RUF
        Samsung Semiconductor
        Insulated Gate Bipolar Transistor
        Datasheet Compare
          Min.:1
          Mult.:1
          - NO - 3 SILICON - - - - - - SAMSUNG SEMICONDUCTOR INC - 1 - PLASTIC/EPOXY FLANGE MOUNT, R-PSFM-T3 RECTANGULAR FLANGE MOUNT Obsolete TO-3P - - 160 ns 44 ns - - EAR99 HIGH SPEED SWITCHING SINGLE THROUGH-HOLE unknown - 2 R-PSFM-T3 Not Qualified SINGLE - MOTOR CONTROL N-CHANNEL - - 48 A - 600 V - - - - - -
          SGH30N60RUF
          SGH30N60RUF

          700-372-SGH30N60RUF Samsung Semiconductor
          RoHS :
          Package : -
          In Stock : -
          1 : -
          Samsung Semiconductor SGP13N60UFD
          Mfr. Part #
          SGP13N60UFD
          Twicea Part #
          700-372-SGP13N60UFD
          Samsung Semiconductor
          Insulated Gate Bipolar Transistor
          Datasheet Compare
            Min.:1
            Mult.:1
            - NO - 3 SILICON - - - - - - SAMSUNG SEMICONDUCTOR INC - 1 150 °C PLASTIC/EPOXY FLANGE MOUNT, R-PSFM-T3 RECTANGULAR FLANGE MOUNT Obsolete SFM - - 160 ns 41 ns - - EAR99 HIGH SPEED SWITCHING SINGLE THROUGH-HOLE unknown - 3 R-PSFM-T3 Not Qualified SINGLE WITH BUILT-IN DIODE - MOTOR CONTROL N-CHANNEL TO-220 60 W 13 A - 600 V 20 V 7.5 V - 280 ns - -
            SGP13N60UFD
            SGP13N60UFD

            700-372-SGP13N60UFD Samsung Semiconductor
            RoHS :
            Package : -
            In Stock : -
            1 : -
            Samsung Semiconductor SGR2N60UFD
            Mfr. Part #
            SGR2N60UFD
            Twicea Part #
            700-372-SGR2N60UFD
            Samsung Semiconductor
            Insulated Gate Bipolar Transistor
            Datasheet Compare
              Min.:1
              Mult.:1
              - YES - 2 SILICON - - - - - - SAMSUNG SEMICONDUCTOR INC - 1 150 °C PLASTIC/EPOXY SMALL OUTLINE, R-PSSO-G2 RECTANGULAR SMALL OUTLINE Obsolete TO-252 - - 132 ns 46 ns - - EAR99 HIGH SPEED SWITCHING SINGLE GULL WING unknown - 3 R-PSSO-G2 Not Qualified SINGLE WITH BUILT-IN DIODE - MOTOR CONTROL N-CHANNEL - - 2.4 A - 600 V - - - - - -
              SGR2N60UFD
              SGR2N60UFD

              700-372-SGR2N60UFD Samsung Semiconductor
              RoHS :
              Package : -
              In Stock : -
              1 : -
              Samsung Semiconductor SGL60N90D
              Mfr. Part #
              SGL60N90D
              Twicea Part #
              700-372-SGL60N90D
              Samsung Semiconductor
              Description: Insulated Gate Bipolar Transistor
              Datasheet Compare
                Min.:1
                Mult.:1
                - NO - 3 SILICON - - - - - - SAMSUNG SEMICONDUCTOR INC - 1 150 °C PLASTIC/EPOXY FLANGE MOUNT, R-PSFM-T3 RECTANGULAR FLANGE MOUNT Obsolete TO-264 - - 500 ns 350 ns - - EAR99 HIGH SPEED SWITCHING SINGLE THROUGH-HOLE unknown - 3 R-PSFM-T3 Not Qualified SINGLE WITH BUILT-IN DIODE ISOLATED POWER CONTROL N-CHANNEL TO-264 - 60 A - 900 V - - - - - -
                SGL60N90D
                SGL60N90D

                700-372-SGL60N90D Samsung Semiconductor
                RoHS :
                Package : -
                In Stock : -
                1 : -
                Samsung Semiconductor SGR20N40L
                Mfr. Part #
                SGR20N40L
                Twicea Part #
                700-372-SGR20N40L
                Samsung Semiconductor
                Insulated Gate Bipolar Transistor
                Datasheet Compare
                  Min.:1
                  Mult.:1
                  gold-plated YES 74 2 SILICON 1 socket 2x37 2.54mm THT 3.33 g SAMSUNG SEMICONDUCTOR INC female - 150 °C PLASTIC/EPOXY SMALL OUTLINE, R-PSSO-G2 RECTANGULAR SMALL OUTLINE Obsolete TO-252 2.54mm straight 2800 ns 1200 ns pin strips -40...163°C EAR99 - SINGLE GULL WING unknown 1.5A 3 R-PSSO-G2 Not Qualified SINGLE - - N-CHANNEL - - - 60V 450 V - - beryllium copper - 0.254µm UL94V-0
                  SGR20N40L
                  SGR20N40L

                  700-372-SGR20N40L Samsung Semiconductor
                  RoHS :
                  Package : -
                  In Stock : -
                  1 : -
                  Samsung Semiconductor SGL40N150
                  Mfr. Part #
                  SGL40N150
                  Twicea Part #
                  700-372-SGL40N150
                  Samsung Semiconductor
                  Description: Insulated Gate Bipolar Transistor
                  Datasheet Compare
                    Min.:1
                    Mult.:1
                    - NO - 3 SILICON - - - - - - SAMSUNG SEMICONDUCTOR INC - 1 150 °C PLASTIC/EPOXY FLANGE MOUNT, R-PSFM-T3 RECTANGULAR FLANGE MOUNT Obsolete TO-264 - - 500 ns 700 ns - - EAR99 HIGH SPEED SWITCHING SINGLE THROUGH-HOLE unknown - 3 R-PSFM-T3 Not Qualified SINGLE - POWER CONTROL N-CHANNEL TO-264 - 40 A - 1500 V - - - - - -
                    SGL40N150
                    SGL40N150

                    700-372-SGL40N150 Samsung Semiconductor
                    RoHS :
                    Package : -
                    In Stock : -
                    1 : -
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                    Discrete Semiconductor Products

                    Transistors - IGBTs - Single definition: An IGBT(Insulated-Gate Bipolar Transistor) is a three-terminal power semiconductor device primarily used as an electronic switch. It consist... Transistors - IGBTs - Single Product Listing: SGP13N60UF,SGL40N150D,SGH80N60UFD,SGH30N60RUF,SGP13N60UFD.Discrete Semiconductor Products type:Diodes - Zener - Single(126889),Diodes - Rectifiers - Single(107990),Transistors - FETs, MOSFETs - Single(66871),Transistors - Bipolar (BJT) - Single(41289),Diodes - Bridge Rectifiers(23480) .Transistors - IGBTs - Single has 9 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Twicea.
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