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| Image | Part # | Manufacturer | Description | Availability | Pricing | Quantity | Contact plating | Surface Mount | Number of pins | Number of Terminals | Transistor Element Material | Exterior Housing Material | Connector | Connector pinout layout | Contacts pitch | Electrical mounting | Gross weight | Ihs Manufacturer | Kind of connector | Number of Elements | Operating Temperature-Max | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Row pitch | Spatial orientation | Turn-off Time-Nom (toff) | Turn-on Time-Nom (ton) | Type of connector | Operating temperature | ECCN Code | Additional Feature | Terminal Position | Terminal Form | Reach Compliance Code | Current rating | Pin Count | JESD-30 Code | Qualification Status | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | JEDEC-95 Code | Power Dissipation-Max (Abs) | Collector Current-Max (IC) | Rated voltage | Collector-Emitter Voltage-Max | Gate-Emitter Voltage-Max | Gate-Emitter Thr Voltage-Max | Profile | Fall Time-Max (tf) | Plating thickness | Flammability rating |
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![]() | Mfr. Part #SGP13N60UFTwicea Part #700-372-SGP13N60UF | Samsung Semiconductor |
Insulated Gate Bipolar Transistor
Datasheet
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| Min.:1 Mult.:1 | - | NO | - | 3 | SILICON | - | - | - | - | - | - | SAMSUNG SEMICONDUCTOR INC | - | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | SFM | - | - | 160 ns | 41 ns | - | - | EAR99 | HIGH SPEED SWITCHING | SINGLE | THROUGH-HOLE | unknown | - | 3 | R-PSFM-T3 | Not Qualified | SINGLE | - | MOTOR CONTROL | N-CHANNEL | TO-220 | 60 W | 13 A | - | 600 V | 20 V | 7.5 V | - | 280 ns | - | - | ||
| SGP13N60UF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #SGL40N150DTwicea Part #700-372-SGL40N150D | Samsung Semiconductor |
Insulated Gate Bipolar Transistor
Datasheet
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| Min.:1 Mult.:1 | - | NO | - | 3 | SILICON | - | - | - | - | - | - | SAMSUNG SEMICONDUCTOR INC | - | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | TO-264 | - | - | 680 ns | 1300 ns | - | - | EAR99 | HIGH SPEED SWITCHING | SINGLE | THROUGH-HOLE | unknown | - | 3 | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ISOLATED | POWER CONTROL | N-CHANNEL | TO-264 | - | 40 A | - | 1500 V | - | - | - | - | - | - | ||
| SGL40N150D | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #SGH80N60UFDTwicea Part #700-372-SGH80N60UFD | Samsung Semiconductor |
Insulated Gate Bipolar Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | - | NO | - | 3 | SILICON | 1 | - | - | - | - | - | SAMSUNG SEMICONDUCTOR INC | - | - | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | TO-3P | - | - | 167 ns | 50 ns | - | - | EAR99 | HIGH SPEED SWITCHING | SINGLE | THROUGH-HOLE | unknown | - | 2 | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | - | MOTOR CONTROL | N-CHANNEL | - | 200 W | 80 A | - | 600 V | 20 V | 7.5 V | - | 280 ns | - | - | ||
| SGH80N60UFD | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #SGH30N60RUFTwicea Part #700-372-SGH30N60RUF | Samsung Semiconductor |
Insulated Gate Bipolar Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | - | NO | - | 3 | SILICON | - | - | - | - | - | - | SAMSUNG SEMICONDUCTOR INC | - | 1 | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | TO-3P | - | - | 160 ns | 44 ns | - | - | EAR99 | HIGH SPEED SWITCHING | SINGLE | THROUGH-HOLE | unknown | - | 2 | R-PSFM-T3 | Not Qualified | SINGLE | - | MOTOR CONTROL | N-CHANNEL | - | - | 48 A | - | 600 V | - | - | - | - | - | - | ||
| SGH30N60RUF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #SGP13N60UFDTwicea Part #700-372-SGP13N60UFD | Samsung Semiconductor |
Insulated Gate Bipolar Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | - | NO | - | 3 | SILICON | - | - | - | - | - | - | SAMSUNG SEMICONDUCTOR INC | - | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | SFM | - | - | 160 ns | 41 ns | - | - | EAR99 | HIGH SPEED SWITCHING | SINGLE | THROUGH-HOLE | unknown | - | 3 | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | - | MOTOR CONTROL | N-CHANNEL | TO-220 | 60 W | 13 A | - | 600 V | 20 V | 7.5 V | - | 280 ns | - | - | ||
| SGP13N60UFD | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #SGR2N60UFDTwicea Part #700-372-SGR2N60UFD | Samsung Semiconductor |
Insulated Gate Bipolar Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | - | YES | - | 2 | SILICON | - | - | - | - | - | - | SAMSUNG SEMICONDUCTOR INC | - | 1 | 150 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-G2 | RECTANGULAR | SMALL OUTLINE | Obsolete | TO-252 | - | - | 132 ns | 46 ns | - | - | EAR99 | HIGH SPEED SWITCHING | SINGLE | GULL WING | unknown | - | 3 | R-PSSO-G2 | Not Qualified | SINGLE WITH BUILT-IN DIODE | - | MOTOR CONTROL | N-CHANNEL | - | - | 2.4 A | - | 600 V | - | - | - | - | - | - | ||
| SGR2N60UFD | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #SGL60N90DTwicea Part #700-372-SGL60N90D | Samsung Semiconductor |
Description: Insulated Gate Bipolar Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | - | NO | - | 3 | SILICON | - | - | - | - | - | - | SAMSUNG SEMICONDUCTOR INC | - | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | TO-264 | - | - | 500 ns | 350 ns | - | - | EAR99 | HIGH SPEED SWITCHING | SINGLE | THROUGH-HOLE | unknown | - | 3 | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ISOLATED | POWER CONTROL | N-CHANNEL | TO-264 | - | 60 A | - | 900 V | - | - | - | - | - | - | ||
| SGL60N90D | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #SGR20N40LTwicea Part #700-372-SGR20N40L | Samsung Semiconductor |
Insulated Gate Bipolar Transistor
Datasheet
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| Min.:1 Mult.:1 | gold-plated | YES | 74 | 2 | SILICON | 1 | socket | 2x37 | 2.54mm | THT | 3.33 g | SAMSUNG SEMICONDUCTOR INC | female | - | 150 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-G2 | RECTANGULAR | SMALL OUTLINE | Obsolete | TO-252 | 2.54mm | straight | 2800 ns | 1200 ns | pin strips | -40...163°C | EAR99 | - | SINGLE | GULL WING | unknown | 1.5A | 3 | R-PSSO-G2 | Not Qualified | SINGLE | - | - | N-CHANNEL | - | - | - | 60V | 450 V | - | - | beryllium copper | - | 0.254µm | UL94V-0 | ||
| SGR20N40L | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #SGL40N150Twicea Part #700-372-SGL40N150 | Samsung Semiconductor |
Description: Insulated Gate Bipolar Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | - | NO | - | 3 | SILICON | - | - | - | - | - | - | SAMSUNG SEMICONDUCTOR INC | - | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | TO-264 | - | - | 500 ns | 700 ns | - | - | EAR99 | HIGH SPEED SWITCHING | SINGLE | THROUGH-HOLE | unknown | - | 3 | R-PSFM-T3 | Not Qualified | SINGLE | - | POWER CONTROL | N-CHANNEL | TO-264 | - | 40 A | - | 1500 V | - | - | - | - | - | - | ||
| SGL40N150 |
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