Samsung Semiconductor SGR2N60UFD Single IGBTs
SGR2N60UFD
2107-372-SGR2N60UFD
RoHS Compliant
Insulated Gate Bipolar Transistor, 2.4A I(C), 600V V(BR)CES, N-Channel, DPAK-3
In Stock Min. : 1
Mult. : 1
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SGR2N60UFD Tech Specifications
Samsung SGR2N60UFD technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Surface Mount | YES | |
| Number of Terminals | 2Terminals | |
| Transistor Element Material | SILICON | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Part Package Code | TO-252 | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Number of Elements | 1 Element | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Turn-off Time-Nom (toff) | 132 ns | |
| Turn-on Time-Nom (ton) | 46 ns | |
| ECCN Code | EAR99 | |
| Additional Feature | HIGH SPEED SWITCHING | |
| Terminal Position | SINGLE | |
| Terminal Form | GULL WING | |
| Reach Compliance Code | unknown | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSSO-G2 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Transistor Application | MOTOR CONTROL | |
| Polarity/Channel Type | N-CHANNEL | |
| Collector Current-Max (IC) | 2.4 A | |
| Collector-Emitter Voltage-Max | 600 V |
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