Samsung Semiconductor SGP13N60UFD Single IGBTs
SGP13N60UFD
2107-372-SGP13N60UFD
RoHS Compliant
Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220, TO-220, 3 PIN
In Stock Min. : 1
Mult. : 1
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SGP13N60UFD Tech Specifications
Samsung SGP13N60UFD technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Surface Mount | NO | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Part Package Code | SFM | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Number of Elements | 1 Element | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Turn-off Time-Nom (toff) | 160 ns | |
| Turn-on Time-Nom (ton) | 41 ns | |
| ECCN Code | EAR99 | |
| Additional Feature | HIGH SPEED SWITCHING | |
| Terminal Position | SINGLE | |
| Terminal Form | THROUGH-HOLE | |
| Reach Compliance Code | unknown | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSFM-T3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Transistor Application | MOTOR CONTROL | |
| Polarity/Channel Type | N-CHANNEL | |
| JEDEC-95 Code | TO-220 | |
| Power Dissipation-Max (Abs) | 60 W | |
| Collector Current-Max (IC) | 13 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| Gate-Emitter Thr Voltage-Max | 7.5 V | |
| Fall Time-Max (tf) | 280 ns |
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