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Image Part # Manufacturer Description Availability Pricing Quantity Mounting TypePackage / CaseSupplier Device PackageBase Product NumberBrandCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageContinuous Collector Current at 25 CContinuous Collector Current Ic MaxCurrent-Collector (Ic) (Max)Factory Pack QuantityFactory Pack QuantityManufacturerMaximum Collector Emitter VoltageMaximum Gate Emitter VoltageMaximum Operating TemperatureMfrMinimum Operating TemperatureMoisture SensitiveMounting StylesPackagePackage TypePd - Power DissipationProduct StatusRoHSTest ConditionsOperating TemperaturePackagingSeriesSubcategoryTechnologyConfigurationInput TypePower - MaxProduct TypeVoltage - Collector Emitter Breakdown (Max)Vce(on) (Max) @ Vge, IcIGBT TypeGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyReverse Recovery Time (trr)Product Category
Bourns Inc. BIDW50N65T
Mfr. Part #
BIDW50N65T
Twicea Part #
103-372-BIDW50N65T 		Bourns Inc.
IGBT 650V 50A TRENCH TO-247-3L
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2507 In Stock
    Min.:1
    Mult.:1
    		 Through Hole TO-247-3 TO-247 BIDW50N Bourns 650 V 1.65 V 100 A 100 A 100 A 600 Bourns 650 V ±20V + 150 C Bourns Inc. - 55 C - Through Hole Tube TO-247 416 W Active Details 400V, 50A, 10Ohm, 15V -55°C ~ 150°C (TJ) Tube - IGBTs Si Single Diode Standard 416 W IGBT Transistors 650 V 2.2V @ 15V, 50A Trench Field Stop 123 nC 150 A 37ns/125ns 3mJ (on), 1.1mJ (off) 37.5 ns IGBT Transistors
    BIDW50N65T
    BIDW50N65T

    103-372-BIDW50N65T Bourns Inc.
    RoHS :
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    In Stock : 2507
    1 : -
    Bourns Inc. BIDW20N60T
    Mfr. Part #
    BIDW20N60T
    Twicea Part #
    103-372-BIDW20N60T     		Bourns Inc.
    IGBT 600V 20A TRENCH TO-247N
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    3472 In Stock
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      Mult.:1
      		 Through Hole TO-247-3 TO-247 BIDW20N Bourns 600 V 1.7 V 40 A 40 A 40 A 600 Bourns 600 V ±20V + 150 C Bourns Inc. - 55 C - Through Hole Tube TO-247 192 W Active Details 400V, 20A, 10Ohm, 15V -55°C ~ 150°C (TJ) Tube - IGBTs Si Single Diode Standard 192 W IGBT Transistors 600 V 2.4V @ 15V, 20A Trench Field Stop 52 nC 60 A 19ns/48ns 1mJ (on), 300μJ (off) 33.7 ns IGBT Transistors
      BIDW20N60T
      BIDW20N60T

      103-372-BIDW20N60T Bourns Inc.
      RoHS :
      Package : -
      In Stock : 3472
      1 : -
      Bourns Inc. BIDNW30N60H3
      Mfr. Part #
      BIDNW30N60H3
      Twicea Part #
      103-372-BIDNW30N60H3       		Bourns Inc.
      IGBT 600V 30A TRENCH TO-247N-3L
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      1118 In Stock
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        		 Through Hole TO-247-3 TO-247N-3L BIDNW30N Bourns 600 V 1.65 V 60 A 60 A 60 A 600 Bourns 600 V ±20V + 150 C Bourns Inc. - 55 C - Through Hole Tube TO-247N 230 W Active Details 400V, 30A, 10Ohm, 15V -55°C ~ 150°C (TJ) Tube - IGBTs Si Single Diode Standard 230 W IGBT Transistors 600 V 2V @ 15V, 30A Trench Field Stop 76 nC 120 A 30ns/67ns 1.85mJ (on), 450μJ (off) 28 ns IGBT Transistors
        BIDNW30N60H3
        BIDNW30N60H3

        103-372-BIDNW30N60H3 Bourns Inc.
        RoHS :
        Package : -
        In Stock : 1118
        1 : -
        Bourns Inc. BIDW30N60T
        Mfr. Part #
        BIDW30N60T
        Twicea Part #
        103-372-BIDW30N60T         		Bourns Inc.
        IGBT 600V 30A TRENCH TO-247
        Datasheet Compare
        3530 In Stock
          Min.:1
          Mult.:1
          		 Through Hole TO-247-3 TO-247 BIDW30N Bourns 600 V 1.65 V 60 A 60 A 60 A 600 Bourns 600 V ±20V + 150 C Bourns Inc. - 55 C - Through Hole Tube TO-247 230 W Active Details 400V, 30A, 10Ohm, 15V -55°C ~ 150°C (TJ) Tube - IGBTs Si Single Diode Standard 230 W IGBT Transistors 600 V 1.65V @ 15V, 30A Trench Field Stop 76 nC 90 A 30ns/67ns 1.85mJ (on), 450μJ (off) 40 ns IGBT Transistors
          BIDW30N60T
          BIDW30N60T

          103-372-BIDW30N60T Bourns Inc.
          RoHS :
          Package : -
          In Stock : 3530
          1 : -
          Bourns Inc. BIDD05N60T
          Mfr. Part #
          BIDD05N60T
          Twicea Part #
          103-372-BIDD05N60T           		Bourns Inc.
          IGBT 600V 5A TRENCH TO-252
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          10007 In Stock
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            Mult.:1
            		 Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252 (DPAK) BIDD05N Bourns 600 V 1.5 V 10 A 10 A 10 A 2500 Bourns 600 V ±30V + 150 C Bourns Inc. - 55 C Yes SMD/SMT - TO-252 82 W Active Details 400V, 5A, 10Ohm, 15V -55°C ~ 150°C (TJ) MouseReel - IGBTs Si Single Diode Standard 82 W IGBT Transistors 600 V 2V @ 15V, 5A Trench Field Stop 18.5 nC 15 A 7ns/18ns 200μJ (on), 70μJ (off) 40 ns IGBT Transistors
            BIDD05N60T
            BIDD05N60T

            103-372-BIDD05N60T Bourns Inc.
            RoHS :
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            In Stock : 10007
            1 : -

            Discrete Semiconductor Products

            Transistors - IGBTs - Single definition: An IGBT(Insulated-Gate Bipolar Transistor) is a three-terminal power semiconductor device primarily used as an electronic switch. It consist... Transistors - IGBTs - Single Product Listing: BIDW50N65T,BIDW20N60T,BIDNW30N60H3,BIDW30N60T,BIDD05N60T.Discrete Semiconductor Products type:Diodes - Zener - Single(126889),Diodes - Rectifiers - Single(107990),Transistors - FETs, MOSFETs - Single(66871),Transistors - Bipolar (BJT) - Single(41289),Diodes - Bridge Rectifiers(23480) .Transistors - IGBTs - Single has 5 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Twicea.