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BIDD05N60T Tech Specifications
Bourns BIDD05N60T technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Mounting Type | Surface Mount | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Supplier Device Package | TO-252 (DPAK) | |
| Mfr | Bourns Inc. | |
| Product Status | Active | |
| Current-Collector (Ic) (Max) | 10 A | |
| Test Conditions | 400V, 5A, 10Ohm, 15V | |
| Base Product Number | BIDD05N | |
| Maximum Gate Emitter Voltage | ±30V | |
| Package Type | TO-252 | |
| Maximum Collector Emitter Voltage | 600 V | |
| Moisture Sensitive | Yes | |
| Pd - Power Dissipation | 82 W | |
| Maximum Operating Temperature | + 150 C | |
| Collector-Emitter Saturation Voltage | 1.5 V | |
| Minimum Operating Temperature | - 55 C | |
| Factory Pack QuantityFactory Pack Quantity | 2500 | |
| Continuous Collector Current at 25 C | 10 A | |
| Mounting Styles | SMD/SMT | |
| Manufacturer | Bourns | |
| Brand | Bourns | |
| Continuous Collector Current Ic Max | 10 A | |
| RoHS | Details | |
| Collector- Emitter Voltage VCEO Max | 600 V | |
| Series | - | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Packaging | MouseReel | |
| Subcategory | IGBTs | |
| Technology | Si | |
| Configuration | Single Diode | |
| Input Type | Standard | |
| Power - Max | 82 W | |
| Product Type | IGBT Transistors | |
| Voltage - Collector Emitter Breakdown (Max) | 600 V | |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 5A | |
| IGBT Type | Trench Field Stop | |
| Gate Charge | 18.5 nC | |
| Current - Collector Pulsed (Icm) | 15 A | |
| Td (on/off) @ 25°C | 7ns/18ns | |
| Switching Energy | 200μJ (on), 70μJ (off) | |
| Reverse Recovery Time (trr) | 40 ns | |
| Product Category | IGBT Transistors |
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