In Stock
:
4146 Min. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
BIDW30N60T Tech Specifications
Bourns BIDW30N60T technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 | |
| Supplier Device Package | TO-247 | |
| Mfr | Bourns Inc. | |
| Package | Tube | |
| Product Status | Active | |
| Current-Collector (Ic) (Max) | 60 A | |
| Test Conditions | 400V, 30A, 10Ohm, 15V | |
| Base Product Number | BIDW30N | |
| Maximum Gate Emitter Voltage | ±20V | |
| Package Type | TO-247 | |
| Maximum Collector Emitter Voltage | 600 V | |
| Pd - Power Dissipation | 230 W | |
| Maximum Operating Temperature | + 150 C | |
| Minimum Operating Temperature | - 55 C | |
| Factory Pack QuantityFactory Pack Quantity | 600 | |
| Mounting Styles | Through Hole | |
| Manufacturer | Bourns | |
| Brand | Bourns | |
| Continuous Collector Current Ic Max | 60 A | |
| RoHS | Details | |
| Collector- Emitter Voltage VCEO Max | 600 V | |
| Series | - | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Packaging | Tube | |
| Subcategory | IGBTs | |
| Technology | Si | |
| Configuration | Single Diode | |
| Input Type | Standard | |
| Power - Max | 230 W | |
| Product Type | IGBT Transistors | |
| Voltage - Collector Emitter Breakdown (Max) | 600 V | |
| Vce(on) (Max) @ Vge, Ic | 1.65V @ 15V, 30A | |
| IGBT Type | Trench Field Stop | |
| Gate Charge | 76 nC | |
| Current - Collector Pulsed (Icm) | 90 A | |
| Td (on/off) @ 25°C | 30ns/67ns | |
| Switching Energy | 1.85mJ (on), 450μJ (off) | |
| Reverse Recovery Time (trr) | 40 ns | |
| Product Category | IGBT Transistors |
Index :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ



