BIDW30N60T Tech Specifications

Bourns  BIDW30N60T technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247
Mfr Bourns Inc.
Package Tube
Product Status Active
Current-Collector (Ic) (Max) 60 A
Test Conditions 400V, 30A, 10Ohm, 15V
Base Product Number BIDW30N
Maximum Gate Emitter Voltage ±20V
Package Type TO-247
Maximum Collector Emitter Voltage 600 V
Pd - Power Dissipation 230 W
Maximum Operating Temperature + 150 C
Minimum Operating Temperature - 55 C
Factory Pack QuantityFactory Pack Quantity 600
Mounting Styles Through Hole
Manufacturer Bourns
Brand Bourns
Continuous Collector Current Ic Max 60 A
RoHS Details
Collector- Emitter Voltage VCEO Max 600 V
Series -
Operating Temperature -55°C ~ 150°C (TJ)
Packaging Tube
Subcategory IGBTs
Technology Si
Configuration Single Diode
Input Type Standard
Power - Max 230 W
Product Type IGBT Transistors
Voltage - Collector Emitter Breakdown (Max) 600 V
Vce(on) (Max) @ Vge, Ic 1.65V @ 15V, 30A
IGBT Type Trench Field Stop
Gate Charge 76 nC
Current - Collector Pulsed (Icm) 90 A
Td (on/off) @ 25°C 30ns/67ns
Switching Energy 1.85mJ (on), 450μJ (off)
Reverse Recovery Time (trr) 40 ns
Product Category IGBT Transistors
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