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| Image | Part # | Manufacturer | Description | Availability | Pricing | Quantity | Factory Lead Time | Lifecycle Status | Mount | Mounting Type | Package / Case | Surface Mount | Number of Pins | Supplier Device Package | Weight | Number of Terminals | Transistor Element Material | Manufacturer Package Identifier | Brand | Channel Mode | Current - Continuous Drain (Id) @ 25℃ | Drain Current-Max (ID) | Factory Pack QuantityFactory Pack Quantity | Forward Transconductance - Min | Id - Continuous Drain Current | Ihs Manufacturer | Manufacturer | Manufacturer Part Number | Maximum Operating Temperature | Mfr | Minimum Operating Temperature | Mounting Styles | Number of Elements | Package | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Pd - Power Dissipation | Product Status | Qg - Gate Charge | Rds On - Drain-Source Resistance | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Transistor Polarity | Turn Off Delay Time | Typical Turn-Off Delay Time | Typical Turn-On Delay Time | Unit Weight | Vds - Drain-Source Breakdown Voltage | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Operating Temperature | Packaging | Published | Series | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Subcategory | Max Power Dissipation | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Reference Standard | JESD-30 Code | Configuration | Number of Channels | Element Configuration | Operating Mode | Power Dissipation | Case Connection | Turn On Delay Time | Power - Max | FET Type | Transistor Application | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Halogen Free | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Drain to Source Voltage (Vdss) | Polarity/Channel Type | Fall Time (Typ) | Product Type | Transistor Type | Continuous Drain Current (ID) | Threshold Voltage | JEDEC-95 Code | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Drain Current-Max (Abs) (ID) | Drain-source On Resistance-Max | Drain to Source Breakdown Voltage | Pulsed Drain Current-Max (IDM) | Dual Supply Voltage | Input Capacitance | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | Max Junction Temperature (Tj) | FET Feature | Rds On Max | Nominal Vgs | Feedback Cap-Max (Crss) | Product Category | Height | Length | Width | Thickness | Radiation Hardening | REACH SVHC | RoHS Status | Lead Free |
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  | Mfr. Part #AON5820Twicea Part #62-367-AON5820 | Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 20V 10A 6DFN
Datasheet
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| 29841
In Stock
| Min.:1 Mult.:1 | 18 Weeks | - | Surface Mount | Surface Mount | 6-SMD, Flat Lead Exposed Pad | - | 6 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | -55°C~150°C TJ | Tape & Reel (TR) | 2009 | - | - | - | Active | 1 (Unlimited) | - | - | - | - | - | - | - | - | - | 1.7W | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 1.7W | - | - | - | 2 N-Channel (Dual) Common Drain | - | 9.5m Ω @ 10A, 4.5V | 1V @ 250μA | - | 1510pF @ 10V | 15nC @ 4.5V | - | 20V | - | - | - | - | 10A | - | - | 12V | - | - | - | - | - | - | - | - | - | - | - | Logic Level Gate | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | |
| AON5820 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #DMS3017SSD-13Twicea Part #233-367-DMS3017SSD-13 | Diodes Incorporated |
MOSFET Dual N-Ch DIOFET VDSS 30V VGSS 20V
Datasheet
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| Min.:1 Mult.:1 | 20 Weeks | - | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | 8 | - | 73.992255mg | - | SILICON | - | - | - | 8A 6A | - | - | - | - | - | - | - | - | - | - | - | 2 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | -55°C~150°C TJ | Tape & Reel (TR) | 2010 | - | e3 | yes | Obsolete | 1 (Unlimited) | 8 | - | EAR99 | Matte Tin (Sn) | - | - | HIGH RELIABILITY | - | - | 1.19W | - | - | GULL WING | 260 | - | 40 | - | 8 | - | - | - | 2 | Dual | ENHANCEMENT MODE | 1.79W | - | - | - | 2 N-Channel (Dual) | SWITCHING | 12m Ω @ 9.5A, 10V | 2.5V @ 250μA | - | 1276pF @ 15V | 30.6nC @ 10V | - | - | - | - | - | - | 8A | 2.5V | - | 20V | - | 10A | - | 30V | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | Logic Level Gate | - | 2.5 V | - | - | - | - | - | - | No | No SVHC | ROHS3 Compliant | - | ||
| DMS3017SSD-13 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #FF23MR12W1M1B11BOMA1Twicea Part #376-367-FF23MR12W1M1B11BOMA1 | Infineon Technologies |
MOSFET 2 N-CH 1200V 50A MODULE
Datasheet
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| 256
In Stock
| Min.:1 Mult.:1 | 16 Weeks | - | - | Chassis Mount | Module | - | - | - | - | - | - | AG-EASY1BM-2 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 43.5 ns | - | - | - | - | - | - | -40°C~150°C TJ | Tray | 2008 | CoolSiC™+ | - | - | Active | Not Applicable | - | - | EAR99 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 2 | - | - | 20mW | - | 12 ns | - | 2 N-Channel (Dual) | - | 23m Ω @ 50A, 15V | 5.55V @ 20mA | - | 3950pF @ 800V | 125nC @ 15V | - | 1200V 1.2kV | - | - | - | - | 50A | - | - | - | - | - | - | - | - | - | - | - | - | - | 150°C | Silicon Carbide (SiC) | - | - | - | - | 12.35mm | - | - | - | - | - | ROHS3 Compliant | - | |
| FF23MR12W1M1B11BOMA1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #PHP225,118Twicea Part #554-367-PHP225,118 | Nexperia USA Inc. |
MOSFET 2P-CH 30V 2.3A 8SOIC
Datasheet
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| 10000
In Stock
| Min.:1 Mult.:1 | 16 Weeks | - | - | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | YES | 8 | - | - | - | SILICON | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 2 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 150°C TJ | Tape & Reel (TR) | 2011 | - | e4 | - | Obsolete | 1 (Unlimited) | 8 | - | - | Nickel/Palladium/Gold (Ni/Pd/Au) | - | - | - | - | - | 2W | - | - | GULL WING | 260 | - | 30 | - | 8 | - | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | - | - | - | 2W | - | - | - | 2 P-Channel (Dual) | SWITCHING | 250m Ω @ 1A, 10V | 2.8V @ 1mA | - | 250pF @ 20V | 25nC @ 10V | - | 30V | - | - | - | - | 2.3A | - | MS-012AA | 20V | -30V | - | - | -30V | - | - | - | - | - | - | - | Logic Level Gate | - | - | - | - | - | - | - | - | No | - | RoHS Compliant | Lead Free | |
| PHP225,118 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #DMC1015UPD-13Twicea Part #233-367-DMC1015UPD-13 | Diodes Incorporated |
MOSFET 8V 24V POWERDI5060-8
Datasheet
Compare
| 34353
In Stock
| Min.:1 Mult.:1 | 17 Weeks | - | Surface Mount | Surface Mount | 8-PowerTDFN | - | 8 | - | - | - | - | - | - | - | 9.5A 6.9A | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | -55°C~150°C TJ | Tape & Reel (TR) | 2016 | - | e3 | yes | Active | 1 (Unlimited) | - | - | EAR99 | Matte Tin (Sn) | - | - | - | - | - | 2.3W | - | - | - | NOT SPECIFIED | - | NOT SPECIFIED | - | - | - | - | - | - | - | - | - | - | - | - | N and P-Channel | - | 17m Ω @ 11.8A, 4.5V | 1.5V @ 250μA | - | 1495pF @ 6V | 15.6nC @ 4.5V | - | 12V | - | - | - | - | 6.9A | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Standard | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | |
| DMC1015UPD-13 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #HS8K1TBTwicea Part #687-367-HS8K1TB | ROHM Semiconductor |
30V NCH NCH POWER MOSFET
Datasheet
Compare
| 148665
In Stock
| Min.:1 Mult.:1 | 16 Weeks | - | - | Surface Mount | 8-UDFN Exposed Pad | YES | - | - | - | - | SILICON | - | - | - | 10A Ta 11A Ta | - | - | - | - | - | - | - | - | - | - | - | 2 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 150°C TJ | Cut Tape (CT) | 2017 | - | - | - | Active | 1 (Unlimited) | 8 | - | EAR99 | - | - | - | - | - | - | - | - | - | NO LEAD | NOT SPECIFIED | not_compliant | NOT SPECIFIED | - | - | - | S-PDSO-N8 | COMPLEX | - | - | ENHANCEMENT MODE | - | DRAIN SOURCE | - | 2W Ta | 2 N-Channel (Dual) | SWITCHING | 14.6m Ω @ 10A, 10V, 11.8m Ω @ 11A, 10V | 2.5V @ 1mA | - | 348pF 429pF @ 15V | 6nC, 7.4nC @ 10V | - | 30V | - | - | - | - | - | - | - | - | - | 10A | 0.02Ohm | - | 40A | - | - | 30V | 7.6 mJ | METAL-OXIDE SEMICONDUCTOR | - | Standard | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | |
| HS8K1TB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #ECH8651R-TL-HTwicea Part #598-367-ECH8651R-TL-H | ON Semiconductor |
MOSFET 2N-CH 24V 10A ECH8
Datasheet
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| 6972
In Stock
| Min.:1 Mult.:1 | 8 Weeks | - | - | Surface Mount | 8-SMD, Flat Lead | - | 8 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 2 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 4 μs | - | - | - | - | - | - | 150°C TJ | Tape & Reel (TR) | 2012 | - | e6 | yes | Obsolete | 1 (Unlimited) | - | - | EAR99 | Tin/Bismuth (Sn/Bi) | - | - | - | - | - | 1.4W | - | - | - | - | - | - | ECH8651R | 8 | - | - | - | - | Dual | - | 1.4W | - | 300 ns | 1.5W | 2 N-Channel (Dual) | - | 14m Ω @ 5A, 4.5V | - | Halogen Free | - | 24nC @ 10V | 1μs | 24V | - | 2.5 μs | - | - | 10A | - | - | 12V | - | - | - | 24V | - | - | - | - | - | - | - | Logic Level Gate | - | - | - | - | 900μm | 2.9mm | 2.3mm | - | No | - | RoHS Compliant | Lead Free | |
| ECH8651R-TL-H | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #DMN4026SSDQ-13Twicea Part #233-367-DMN4026SSDQ-13 | Diodes Incorporated |
MOSFET 2N-CH 40V 7A 8SO
Datasheet
Compare
| 28819
In Stock
| Min.:1 Mult.:1 | 23 Weeks | - | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | 8 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 15.1 ns | - | - | - | - | - | - | -55°C~150°C TJ | Tape & Reel (TR) | 2014 | - | e3 | - | Active | 1 (Unlimited) | - | - | EAR99 | Matte Tin (Sn) | - | - | - | - | - | 1.3W | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 5.3 ns | - | 2 N-Channel (Dual) | - | 24m Ω @ 6A, 10V | 3V @ 250μA | - | 1060pF @ 20V | 19.1nC @ 10V | 7.1ns | 40V | - | 4.8 ns | - | - | 7A | - | - | 20V | - | - | - | - | - | - | - | - | - | - | - | Logic Level Gate | - | - | - | - | - | - | - | - | No | - | ROHS3 Compliant | Lead Free | |
| DMN4026SSDQ-13 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #PMDXB550UNEZTwicea Part #554-367-PMDXB550UNEZ | Nexperia USA Inc. |
Dual Mosfet
Datasheet
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| 411595
In Stock
| Min.:1 Mult.:1 | 4 Weeks | - | Surface Mount | Surface Mount | 6-XFDFN Exposed Pad | - | - | - | - | - | SILICON | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 2 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | -55°C~150°C TJ | Cut Tape (CT) | 2015 | - | - | - | Active | 1 (Unlimited) | 6 | - | - | - | - | - | - | - | - | 285mW | - | - | NO LEAD | - | - | - | - | 6 | IEC-60134 | R-PDSO-N6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | - | DRAIN | - | 285mW | 2 N-Channel (Dual) | SWITCHING | 670m Ω @ 590mA, 4.5V | 950mV @ 250μA | - | 30.3pF @ 15V | 1.05nC @ 4.5V | - | 30V | - | - | - | - | 590mA | - | - | - | - | 0.59A | 0.9Ohm | - | - | - | - | 30V | - | METAL-OXIDE SEMICONDUCTOR | - | Standard | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | |
| PMDXB550UNEZ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #FC6946010RTwicea Part #590-367-FC6946010R | Panasonic Electronic Components |
MOSFET NCH NCH MOS FET FLT LD 1.6x1.6mm
Datasheet
Compare
| 7600
In Stock
| Min.:1 Mult.:1 | 10 Weeks | - | Surface Mount | Surface Mount | SOT-563, SOT-666 | - | 6 | - | - | - | SILICON | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 2 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 100 ns | - | - | - | - | - | - | 150°C TJ | Tape & Reel (TR) | 2011 | - | - | - | Active | 1 (Unlimited) | 6 | - | EAR99 | - | - | - | - | 8541.21.00.95 | - | 125mW | - | - | FLAT | NOT SPECIFIED | unknown | NOT SPECIFIED | FC694601 | - | - | - | - | - | Dual | ENHANCEMENT MODE | 125mW | - | 100 ns | - | 2 N-Channel (Dual) | SWITCHING | 12 Ω @ 10mA, 4V | 1.5V @ 1μA | - | 12pF @ 3V | - | - | 60V | - | - | - | - | 100mA | 1.2V | - | 12V | - | 0.1A | 15Ohm | 60V | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | Logic Level Gate | - | 1.2 V | - | - | 500μm | 1.6mm | 1.2mm | - | - | No SVHC | RoHS Compliant | - | |
| FC6946010R | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #NVMFD5C674NLWFT1GTwicea Part #598-367-NVMFD5C674NLWFT1G | ON Semiconductor |
Power MOSFET Dual N-Channel 60 V 42 A 14.4 m Ohm 8-Pin DFN T/R
Datasheet
Compare
| 38000
In Stock
| Min.:1 Mult.:1 | 48 Weeks | ACTIVE (Last Updated: 4 days ago) | - | Surface Mount | 8-PowerTDFN | YES | - | - | - | - | SILICON | - | - | - | 11A Ta 42A Tc | - | - | - | - | - | - | - | - | - | - | - | 2 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | -55°C~175°C TJ | Tape & Reel (TR) | 2013 | Automotive, AEC-Q101 | e3 | yes | Active | 1 (Unlimited) | 6 | - | - | Tin (Sn) | - | - | - | - | - | - | - | - | FLAT | NOT SPECIFIED | not_compliant | NOT SPECIFIED | - | - | - | R-PDSO-F6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | - | DRAIN | - | 3W Ta 37W Tc | 2 N-Channel (Dual) | - | 14.4m Ω @ 10A, 10V | 2.2V @ 25μA | - | 640pF @ 25V | 4.7nC @ 4.5V | - | 60V | - | - | - | - | - | - | - | - | - | - | 0.0204Ohm | - | 119A | - | - | 60V | 61 mJ | METAL-OXIDE SEMICONDUCTOR | - | Standard | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | |
| NVMFD5C674NLWFT1G | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #AO4627Twicea Part #62-367-AO4627 | Alpha & Omega Semiconductor Inc. |
MOSFET N/P-CH 30V 8SOIC
Datasheet
Compare
| 150000
In Stock
| Min.:1 Mult.:1 | 18 Weeks | - | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | - | - | - | - | - | - | - | - | 4.5A 3.5A | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | - | - | - | Active | 1 (Unlimited) | - | - | - | - | - | - | - | - | - | 2W | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | N and P-Channel | - | 50m Ω @ 4.5A, 10V | 2.5V @ 250μA | - | 210pF @ 15V | 5nC @ 10V | - | 30V | - | - | - | - | 3.5A | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Logic Level Gate | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | |
| AO4627 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #CSD83325LTwicea Part #815-367-CSD83325L | Texas Instruments |
MOSFET 2N-CH 12V 6PICOSTAR
Datasheet
Compare
| 15
In Stock
| Min.:1 Mult.:1 | 6 Weeks | ACTIVE (Last Updated: 5 days ago) | Surface Mount | Surface Mount | 6-XFBGA | - | 6 | - | - | - | SILICON | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 2 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 711 ns | - | - | - | - | - | - | -55°C~150°C TJ | Tape & Reel (TR) | - | NexFET™ | - | yes | Active | 1 (Unlimited) | 6 | - | EAR99 | - | - | - | - | - | - | 2.3W | - | BOTTOM | NO LEAD | 260 | - | NOT SPECIFIED | CSD83325 | - | - | - | - | - | Dual | ENHANCEMENT MODE | - | - | 205 ns | - | 2 N-Channel (Dual) Common Drain | SWITCHING | - | 1.25V @ 250μA | - | - | 10.9nC @ 4.5V | 353ns | 12V | - | 589 ns | - | - | 8A | - | - | 10V | - | - | - | - | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | Standard | - | - | 144 pF | - | - | 1.11mm | 2.16mm | 200μm | - | - | ROHS3 Compliant | Lead Free | |
| CSD83325L | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #IRF7755TRPBFTwicea Part #376-367-IRF7755TRPBF | Infineon Technologies |
MOSFET 2P-CH 20V 3.9A 8TSSOP
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| Min.:1 Mult.:1 | - | - | Surface Mount | Surface Mount | 8-TSSOP (0.173, 4.40mm Width) | - | 8 | 8-TSSOP | - | - | - | - | - | - | 3.9A | - | - | - | - | - | - | - | - | - | - | - | 2 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | -55°C~150°C TJ | Tape & Reel (TR) | 2009 | HEXFET® | - | - | Obsolete | 1 (Unlimited) | - | SMD/SMT | - | - | 150°C | -55°C | - | - | - | 1W | - | - | - | - | - | - | IRF7755PBF | - | - | - | - | - | Dual | - | 1W | - | - | 1W | 2 P-Channel (Dual) | - | 51mOhm @ 3.7A, 4.5V | 1.2V @ 250μA | - | 1090pF @ 15V | 17nC @ 4.5V | - | 20V | - | - | - | - | -3.9A | -1.2V | - | 20V | - | - | - | -20V | - | -20V | 1.09nF | - | - | - | - | Logic Level Gate | 51 mΩ | -1.2 V | - | - | - | - | - | - | - | No SVHC | RoHS Compliant | - | ||
| IRF7755TRPBF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #NTMFD4901NFT3GTwicea Part #598-367-NTMFD4901NFT3G | ON Semiconductor |
MOSFET 2N-CH 30V 8DFN
Datasheet
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| 45000
In Stock
| Min.:1 Mult.:1 | 7 Weeks | ACTIVE (Last Updated: 1 day ago) | Surface Mount | Surface Mount | 8-PowerTDFN | - | 8 | - | - | - | SILICON | - | - | - | 10.3A 17.9A | - | - | - | - | - | - | - | - | - | - | - | 2 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | -55°C~150°C TJ | Tape & Reel (TR) | 2006 | - | e3 | yes | Active | 1 (Unlimited) | 8 | - | EAR99 | Tin (Sn) | - | - | - | - | - | 1.2W | - | - | FLAT | - | - | - | - | 8 | - | - | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | - | - | - | - | DRAIN SOURCE | - | 1.1W 1.2W | 2 N-Channel (Dual), Schottky | SWITCHING | 6.5m Ω @ 10A, 10V | 2.2V @ 250μA | - | 1150pF @ 15V | 9.7nC @ 4.5V | - | 30V | - | - | - | - | 17.9A | - | - | 20V | - | 13.5A | 0.0035Ohm | - | 100A | - | - | 30V | 115 mJ | METAL-OXIDE SEMICONDUCTOR | - | Logic Level Gate | - | - | - | - | - | - | - | - | No | - | ROHS3 Compliant | Lead Free | |
| NTMFD4901NFT3G | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #IRF6802SDTRPBFTwicea Part #376-367-IRF6802SDTRPBF | Infineon Technologies |
MOSFET 2N-CH 25V 16A SA
Datasheet
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| 4384
In Stock
| Min.:1 Mult.:1 | 13 Weeks | - | Surface Mount | Surface Mount | DirectFET™ Isometric SA | - | 8 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 13 ns | - | - | - | - | - | - | -40°C~150°C TJ | Tape & Reel (TR) | 2012 | - | - | - | Obsolete | 1 (Unlimited) | - | - | EAR99 | - | - | - | - | - | - | 1.7W | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 1.7W | - | 9.7 ns | - | 2 N-Channel (Dual) | - | 4.2m Ω @ 16A, 10V | 2.1V @ 35μA | - | 1350pF @ 13V | 13nC @ 4.5V | 50ns | 25V | - | 23 ns | - | - | 16A | - | - | 16V | - | 57A | - | 25V | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | Logic Level Gate | - | - | - | - | - | - | - | - | No | - | ROHS3 Compliant | Lead Free | |
| IRF6802SDTRPBF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #PHN210T,118Twicea Part #554-367-PHN210T,118 | Nexperia USA Inc. |
NEXPERIA - PHN210T,118 - MOSFET Transistor, Dual N Channel, 2.2 A, 30 V, 0.08 ohm, 10 V, 2 V
Datasheet
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| Min.:1 Mult.:1 | 16 Weeks | - | - | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | YES | 8 | - | - | - | SILICON | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 2 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 21 ns | - | - | - | - | - | - | -65°C~150°C TJ | Tape & Reel (TR) | 2010 | TrenchMOS™ | e4 | - | Obsolete | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | - | - | LOGIC LEVEL COMPATIBLE | - | - | 2W | - | - | GULL WING | 260 | - | 30 | - | 8 | - | - | - | - | Dual | ENHANCEMENT MODE | 2W | - | 6 ns | - | 2 N-Channel (Dual) | SWITCHING | 100m Ω @ 2.2A, 10V | 2.8V @ 1mA | - | 250pF @ 20V | 6nC @ 10V | 8ns | - | - | 15 ns | - | - | 2.4A | 2V | MS-012AA | 20V | 30V | 3.4A | 0.1Ohm | 30V | 14A | 30V | - | - | 13 mJ | METAL-OXIDE SEMICONDUCTOR | - | Logic Level Gate | - | 2 V | - | - | 1.45mm | 5mm | 4mm | - | No | No SVHC | RoHS Compliant | Lead Free | ||
| PHN210T,118 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #2N7002KDW_R1_00001Twicea Part #17593-367-2N7002KDW_R1_00001 | PANJIT International |
60V 115mA 200mW 3Ω@10V
Datasheet
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| 4521
In Stock
| Min.:1 Mult.:1 | - | - | - | Surface Mount | SOT-363-6 | YES | - | SOT-363 | - | 6 | SILICON | - | Panjit | Enhancement | 115mA (Ta) | 0.115 A | 3000 | 100 mS | 115 mA | PAN JIT INTERNATIONAL INC | Panjit | 2N7002KDW_R1_00001 | + 150 C | Panjit International Inc. | - 55 C | SMD/SMT | 2 | Tape & Reel (TR);Cut Tape (CT);Digi-Reel®; | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G6 | RECTANGULAR | SMALL OUTLINE | Active | 200 mW | Active | 800 pC | 3 Ohms | NOT SPECIFIED | 5.53 | Details | Yes | N-Channel | - | 40 ns | 20 ns | 0.000265 oz | 60 V | - 20 V, + 20 V | 2.5 V | -55°C ~ 150°C (TJ) | MouseReel | - | NFET-035TS | - | - | - | - | - | - | - | - | - | - | ULTRA LOW RESISTANCE | - | MOSFETs | - | Si | DUAL | GULL WING | NOT SPECIFIED | compliant | - | - | - | - | R-PDSO-G6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 2 Channel | - | ENHANCEMENT MODE | - | - | - | 200mW (Ta) | 2 N-Channel (Dual) | SWITCHING | 3Ohm @ 500mA, 10V | 2.5V @ 250µA | - | 35pF @ 25V | 0.8nC @ 4.5V | - | 60V | N-CHANNEL | - | MOSFET | 1 N-Channel | - | - | - | - | - | - | 3 Ω | - | - | - | - | 60 V | - | METAL-OXIDE SEMICONDUCTOR | - | Standard | - | - | 5 pF | MOSFET | - | - | - | - | - | - | - | - | |
| 2N7002KDW_R1_00001 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #2SB808F-SPATwicea Part #689-367-2SB808F-SPA | Sanyo |
N-CHANNEL SILICON (DUAL GATE)
Datasheet
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| 24235
In Stock
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Sanyo | - | - | - | Bulk | - | - | - | - | - | - | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | * | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
| 2SB808F-SPA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #BSL207NH6327XTSA1Twicea Part #376-367-BSL207NH6327XTSA1 | Infineon Technologies |
Trans MOSFET N-CH 20(Min)V 2.1A 6-Pin TSOP T/R
Datasheet
Compare
| Min.:1 Mult.:1 | 12 Weeks | - | Surface Mount | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | - | 6 | - | - | - | SILICON | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 2 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | -55°C~150°C TJ | Tape & Reel (TR) | 2013 | Automotive, AEC-Q101, OptiMOS™ | e3 | yes | Obsolete | 1 (Unlimited) | 6 | - | EAR99 | Matte Tin (Sn) | - | - | AVALANCHE RATED | - | - | 500mW | - | - | GULL WING | NOT SPECIFIED | - | NOT SPECIFIED | - | - | - | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | - | - | - | 500mW | 2 N-Channel (Dual) | - | 70m Ω @ 2.1A, 4.5V | 1.2V @ 11μA | Halogen Free | 419pF @ 10V | 2.1nC @ 4.5V | 2.8ns | - | - | - | - | - | 2.1A | - | - | 12V | 20V | - | 0.07Ohm | - | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | Logic Level Gate, 2.5V Drive | - | - | 24 pF | - | - | - | - | - | - | - | ROHS3 Compliant | Lead Free | ||
| BSL207NH6327XTSA1 |
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