HS8K1TB Tech Specifications

ROHM Semiconductor  HS8K1TB technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Factory Lead Time 16 Weeks
Mounting Type Surface Mount
Package / Case 8-UDFN Exposed Pad
Surface Mount YES
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 10A Ta 11A Ta
Number of Elements 2 Elements
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2017
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code S-PDSO-N8
Configuration COMPLEX
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN SOURCE
Power - Max 2W Ta
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 14.6m Ω @ 10A, 10V, 11.8m Ω @ 11A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 348pF 429pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 6nC, 7.4nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drain Current-Max (Abs) (ID) 10A
Drain-source On Resistance-Max 0.02Ohm
Pulsed Drain Current-Max (IDM) 40A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 7.6 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
RoHS Status ROHS3 Compliant
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