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PMDXB550UNEZ Tech Specifications

Nexperia  PMDXB550UNEZ technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-XFDFN Exposed Pad
Transistor Element Material SILICON
Number of Elements 2 Elements
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2015
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
Max Power Dissipation 285mW
Terminal Form NO LEAD
Pin Count 6
Reference Standard IEC-60134
JESD-30 Code R-PDSO-N6
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Power - Max 285mW
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 670m Ω @ 590mA, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 30.3pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 1.05nC @ 4.5V
Drain to Source Voltage (Vdss) 30V
Continuous Drain Current (ID) 590mA
Drain Current-Max (Abs) (ID) 0.59A
Drain-source On Resistance-Max 0.9Ohm
DS Breakdown Voltage-Min 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
RoHS Status ROHS3 Compliant
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