- All Products
- Discrete Semiconductor Products
- Transistors - FETs, MOSFETs - Arrays
| Image | Part # | Manufacturer | Description | Availability | Pricing | Quantity | Factory Lead Time | Contact Plating | Mount | Mounting Type | Package / Case | Surface Mount | Number of Pins | Supplier Device Package | Weight | Number of Terminals | Transistor Element Material | Base Product Number | Brand | Current - Continuous Drain (Id) @ 25℃ | Drain Current-Max (ID) | Factory Pack QuantityFactory Pack Quantity | Id - Continuous Drain Current | Ihs Manufacturer | Manufacturer | Manufacturer Part Number | Maximum Operating Temperature | Mfr | Minimum Operating Temperature | Mounting Styles | Number of Elements | Operating Temp Range | Operating Temperature-Max | Package | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Pd - Power Dissipation | Product Depth (mm) | Product Status | Rad Hardened | Rds On - Drain-Source Resistance | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Transistor Polarity | Turn Off Delay Time | Typical Turn-Off Delay Time | Typical Turn-On Delay Time | Usage Level | Vds - Drain-Source Breakdown Voltage | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Vr - Reverse Voltage | Operating Temperature | Packaging | Published | Series | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Type | Resistance | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | Subcategory | Max Power Dissipation | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Reference Standard | JESD-30 Code | Qualification Status | Configuration | Number of Channels | Voltage | Element Configuration | Current | Operating Mode | Power Dissipation | Case Connection | Turn On Delay Time | Power - Max | FET Type | Transistor Application | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Drain to Source Voltage (Vdss) | Polarity/Channel Type | Fall Time (Typ) | Product Type | Continuous Drain Current (ID) | Threshold Voltage | Gate to Source Voltage (Vgs) | Drain Current-Max (Abs) (ID) | Drain-source On Resistance-Max | Screening Level | Drain to Source Breakdown Voltage | Pulsed Drain Current-Max (IDM) | Input Capacitance | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | Power Dissipation-Max (Abs) | FET Feature | Rds On Max | Product | Vf - Forward Voltage | Product Category | Product Length (mm) | Height | Length | Width | Product Height (mm) | Radiation Hardening | REACH SVHC | RoHS Status | Lead Free |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. Part #TC6320TG-GTwicea Part #536-367-TC6320TG-G | Microchip Technology |
Trans MOSFET N/P-CH 200V 8-Pin SOIC N T/R
Datasheet
Compare
| 1500
In Stock
| Min.:1 Mult.:1 | 6 Weeks | Tin | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | 8 | - | 84.99187mg | - | SILICON | - | - | - | - | - | - | - | - | - | - | - | - | - | 2 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 20 ns | - | - | - | - | - | - | - | -55°C~150°C TJ | Tape & Reel (TR) | 2010 | - | e3 | - | Active | 1 (Unlimited) | 8 | EAR99 | - | - | - | - | - | - | - | - | - | DUAL | GULL WING | 260 | - | 40 | TC6320 | - | - | - | - | - | 2 | - | - | - | ENHANCEMENT MODE | - | - | 10 ns | - | N and P-Channel | SWITCHING | 7 Ω @ 1A, 10V | 2V @ 1mA | 110pF @ 25V | - | 15ns | - | N-CHANNEL AND P-CHANNEL | 15 ns | - | -2A | 2V | - | - | 7Ohm | - | 200V | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | Standard | - | - | - | - | - | 1.65mm | 4.9mm | 3.9mm | - | No | No SVHC | ROHS3 Compliant | - | |
| TC6320TG-G | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #TC6320K6-GTwicea Part #536-367-TC6320K6-G | Microchip Technology |
Trans Mosfet N/p-ch 200V 8-PIN SOIC T/r
Datasheet
Compare
| 2076
In Stock
| Min.:1 Mult.:1 | 16 Weeks | Tin | Surface Mount | Surface Mount | 8-VDFN Exposed Pad | - | 8 | - | 37.393021mg | - | SILICON | - | - | - | - | - | - | - | - | - | - | - | - | - | 2 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 20 ns | - | - | - | - | - | - | - | -55°C~150°C TJ | Tape & Reel (TR) | 2013 | - | e3 | - | Active | 1 (Unlimited) | 8 | EAR99 | - | - | - | - | - | - | - | - | - | DUAL | - | 260 | - | 40 | TC6320 | - | - | - | - | - | 2 | - | - | - | ENHANCEMENT MODE | - | - | 10 ns | - | N and P-Channel | SWITCHING | 7 Ω @ 1A, 10V | 2V @ 1mA | 110pF @ 25V | - | 15ns | - | N-CHANNEL AND P-CHANNEL | 15 ns | - | 5.2A | - | - | - | 7Ohm | - | 200V | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | Standard | - | - | - | - | - | 1.37mm | 4.89mm | 3.91mm | - | No | - | ROHS3 Compliant | - | |
| TC6320K6-G | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #TC8020K6-GTwicea Part #536-367-TC8020K6-G | Microchip Technology |
Trans MOSFET N/P-CH 200V 56-Pin QFN EP Tray
Datasheet
Compare
| 700
In Stock
| Min.:1 Mult.:1 | 17 Weeks | Tin | Surface Mount | Surface Mount | 56-VFQFN Exposed Pad | - | 56 | - | 191.387631mg | - | SILICON | - | - | - | - | - | - | - | - | - | - | - | - | - | 6 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 20 ns | - | - | - | - | - | - | - | -55°C~150°C TJ | Tray | 2012 | - | e4 | - | Active | 3 (168 Hours) | 56 | EAR99 | - | - | NICKEL PALLADIUM GOLD | - | - | - | - | - | - | QUAD | - | 260 | - | 40 | - | - | - | - | - | COMPLEX | 12 | - | - | - | ENHANCEMENT MODE | - | - | 10 ns | - | 6 N and 6 P-Channel | SWITCHING | 8 Ω @ 1A, 10V | 2.4V @ 1mA | 50pF @ 25V | - | 15ns | 200V | N-CHANNEL AND P-CHANNEL | 15 ns | - | - | - | - | - | 8Ohm | - | -200V | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | Standard | - | - | - | - | - | - | - | - | - | No | - | ROHS3 Compliant | - | |
| TC8020K6-G | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #DN2625DK6-GTwicea Part #536-367-DN2625DK6-G | Microchip Technology |
MOSFET N-CHANNEL DEPLETION MODE
Datasheet
Compare
| 1423
In Stock
| Min.:1 Mult.:1 | 16 Weeks | - | Surface Mount | Surface Mount | 8-VDFN Exposed Pad | - | - | - | 37.393021mg | - | SILICON | - | - | - | - | - | - | - | - | - | - | - | - | - | 1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 10 ns | - | - | - | - | - | - | - | -55°C~150°C TJ | Tray | 2013 | - | e3 | - | Active | 3 (168 Hours) | 8 | EAR99 | - | 3.5Ohm | MATTE TIN | - | - | LOW THRESHOLD | - | - | - | - | NO LEAD | 260 | - | 40 | - | - | - | R-PDSO-N8 | Not Qualified | - | 2 | 250V | Dual | 11A | - | - | DRAIN | 10 ns | - | 2 N-Channel (Dual) | SWITCHING | 3.5 Ω @ 1A, 0V | - | 1000pF @ 25V | 7.04nC @ 1.5V | 20ns | - | - | 20 ns | - | 1.1A | - | 20V | - | - | - | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | Depletion Mode | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | |
| DN2625DK6-G | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #TC8220K6-GTwicea Part #536-367-TC8220K6-G | Microchip Technology |
Two Pair N- And P-channel Enhancement-mode Mosfet
Datasheet
Compare
| 260
In Stock
| Min.:1 Mult.:1 | 3 Weeks | - | Surface Mount | Surface Mount | 12-VFDFN Exposed Pad | - | 12 | - | - | - | SILICON | - | - | - | - | - | - | - | - | - | - | - | - | - | 4 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | -55°C~150°C TJ | Tape & Reel (TR) | 2013 | - | e4 | - | Active | 2 (1 Year) | 12 | EAR99 | - | - | Nickel/Palladium/Gold (Ni/Pd/Au) | - | - | LOGIC LEVEL COMPATIBLE, LOW THRESHOLD | - | - | - | DUAL | NO LEAD | 260 | - | 40 | - | - | - | - | Not Qualified | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | - | - | - | - | ENHANCEMENT MODE | - | - | - | - | 2 N and 2 P-Channel | SWITCHING | 6 Ω @ 1A, 10V | 2.4V @ 1mA | 56pF @ 25V | - | - | 200V | N-CHANNEL AND P-CHANNEL | - | - | - | - | - | - | 7Ohm | - | - | - | - | 200V | - | METAL-OXIDE SEMICONDUCTOR | - | Standard | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | |
| TC8220K6-G | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #TD9944TG-GTwicea Part #536-367-TD9944TG-G | Microchip Technology |
Trans MOSFET N-CH 240V 8-Pin SOIC N T/R
Datasheet
Compare
| 4000
In Stock
| Min.:1 Mult.:1 | 5 Weeks | - | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | 8 | - | 84.99187mg | - | SILICON | - | - | - | - | - | - | - | - | - | - | - | - | - | 2 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 20 ns | - | - | - | - | - | - | - | -55°C~150°C TJ | Tape & Reel (TR) | 2013 | - | e3 | - | Active | 1 (Unlimited) | 8 | EAR99 | - | - | Matte Tin (Sn) - annealed | - | - | LOW THRESHOLD | - | - | - | - | GULL WING | 260 | - | 40 | - | - | - | - | Not Qualified | SINGLE WITH BUILT-IN DIODE | 2 | - | - | - | ENHANCEMENT MODE | - | - | 10 ns | - | 2 N-Channel (Dual) | SWITCHING | 6 Ω @ 500mA, 10V | 2V @ 1mA | 125pF @ 25V | - | 10ns | - | - | 10 ns | - | 1A | - | 20V | - | 6Ohm | - | 240V | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | Standard | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | Lead Free | |
| TD9944TG-G | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #TC7920K6-GTwicea Part #536-367-TC7920K6-G | Microchip Technology |
TWO PAIR, N- AND P-CH ENHANCEMENT-MODE MOSFET w/DRAIN-DIODES12 VDFN 4x4x1.0mm T/R
Datasheet
Compare
| 45987
In Stock
| Min.:1 Mult.:1 | 14 Weeks | Tin | Surface Mount | Surface Mount | 12-VFDFN Exposed Pad | - | 12 | - | - | - | SILICON | - | - | - | - | - | - | - | - | - | - | - | - | - | 4 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 20 ns | - | - | - | - | - | - | - | -55°C~150°C TJ | Tape & Reel (TR) | 2004 | - | e4 | - | Active | 1 (Unlimited) | 12 | EAR99 | - | - | Nickel/Palladium/Gold (Ni/Pd/Au) | - | - | LOGIC LEVEL COMPATIBLE, LOW THRESHOLD | - | - | - | DUAL | NO LEAD | 260 | - | 40 | - | - | - | - | Not Qualified | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | - | - | - | - | ENHANCEMENT MODE | - | - | 10 ns | - | 2 N and 2 P-Channel | SWITCHING | 10 Ω @ 1A, 10V | 2.4V @ 1mA | 52pF @ 25V | - | 15ns | 200V | N-CHANNEL AND P-CHANNEL | 15 ns | - | - | - | - | - | 7Ohm | - | - | - | - | 200V | - | METAL-OXIDE SEMICONDUCTOR | - | Standard | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | Lead Free | |
| TC7920K6-G | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #TC2320TG-GTwicea Part #536-367-TC2320TG-G | Microchip Technology |
Mosfet, N And P Channel, 200V , 8 SOIC 3.90MM(.150IN) T/r
Datasheet
Compare
| 150
In Stock
| Min.:1 Mult.:1 | 3 Weeks | Tin | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | 8 | - | 84.99187mg | - | SILICON | - | - | - | - | - | - | - | - | - | - | - | - | - | 2 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 20 ns | - | - | - | - | - | - | - | -55°C~150°C TJ | Tape & Reel (TR) | 2008 | - | e3 | - | Active | 1 (Unlimited) | 8 | EAR99 | - | - | - | - | - | LOW THRESHOLD | - | - | - | DUAL | GULL WING | 260 | - | 40 | - | - | - | - | - | - | 2 | - | - | - | ENHANCEMENT MODE | - | - | 10 ns | - | N and P-Channel | SWITCHING | 7 Ω @ 1A, 10V | 2V @ 1mA | 110pF @ 25V | - | 15ns | - | N-CHANNEL AND P-CHANNEL | 15 ns | - | 2A | - | 20V | - | 7Ohm | - | 200V | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | Standard | - | - | - | - | - | 1.65mm | 4.9mm | 3.9mm | - | No | - | ROHS3 Compliant | - | |
| TC2320TG-G | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #TC6215TG-GTwicea Part #536-367-TC6215TG-G | Microchip Technology |
N & P-CHANNEL ENHANCEMENT-MODE DUAL MOSFET8 SOIC 3.90mm(.150in) T/R
Datasheet
Compare
| 2000
In Stock
| Min.:1 Mult.:1 | 6 Weeks | - | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | 8 | - | 84.99187mg | - | SILICON | - | - | - | - | - | - | - | - | - | - | - | - | - | 2 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 17.2 ns | - | - | - | - | - | - | - | -55°C~150°C TJ | Tape & Reel (TR) | 2008 | - | e3 | - | Active | 1 (Unlimited) | 8 | EAR99 | - | - | Matte Tin (Sn) - annealed | - | - | - | - | - | - | - | GULL WING | 260 | - | 40 | TC621 | - | - | - | Not Qualified | - | 2 | - | Dual | - | ENHANCEMENT MODE | - | - | 2.5 ns | - | N and P-Channel | SWITCHING | 4 Ω @ 2A, 10V | 2V @ 1mA | 120pF @ 25V | - | 2.3ns | 150V | N-CHANNEL AND P-CHANNEL | 11.3 ns | - | 36A | - | 20V | - | 5Ohm | - | -150V | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | Standard | - | - | - | - | - | 1.65mm | 4.9mm | 3.8mm | - | - | - | ROHS3 Compliant | - | |
| TC6215TG-G | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #TC1550TG-GTwicea Part #536-367-TC1550TG-G | Microchip Technology |
MOSFET 500V N&P 60/125 Ohm
Datasheet
Compare
| 764
In Stock
| Min.:1 Mult.:1 | 7 Weeks | - | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | 8 | - | 84.99187mg | - | SILICON | - | - | - | - | - | - | - | - | - | - | - | - | - | 2 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 15 ns | - | - | - | - | - | - | - | -55°C~150°C TJ | Tape & Reel (TR) | 2008 | - | e3 | - | Active | 1 (Unlimited) | 8 | - | - | - | Matte Tin (Sn) - annealed | - | - | FAST SWITCHNG | - | - | - | - | GULL WING | 260 | - | 40 | - | - | - | - | Not Qualified | - | 2 | - | Dual | - | ENHANCEMENT MODE | - | - | 10 ns | - | N and P-Channel | AMPLIFIER | 60 Ω @ 50mA, 10V | 4V @ 1mA | 55pF @ 25V | - | 10ns | - | N-CHANNEL AND P-CHANNEL | 10 ns | - | 16A | - | 20V | 350A | - | - | 500V | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | Standard | - | - | - | - | - | 1.75mm | 4.9mm | 3.9mm | - | - | - | ROHS3 Compliant | - | |
| TC1550TG-G | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #TC6321T-V/9UTwicea Part #536-367-TC6321T-V/9U | Microchip Technology |
MOSFET N/P-CH 200V 2A 8VDFN
Datasheet
Compare
| 24
In Stock
| Min.:1 Mult.:1 | 7 Weeks | - | - | Surface Mount | 8-VDFN Exposed Pad | YES | - | - | - | - | SILICON | - | - | 2A Ta | - | - | - | - | - | - | - | - | - | - | 2 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | -55°C~175°C | Tape & Reel (TR) | - | - | - | - | Active | 1 (Unlimited) | 8 | - | - | - | - | - | - | - | - | - | - | DUAL | NO LEAD | - | - | - | - | - | TS 16949 | R-PDSO-N8 | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | - | - | - | - | ENHANCEMENT MODE | - | DRAIN | - | - | N and P-Channel | SWITCHING | 7 Ω @ 1A, 10V, 8 Ω @ 1A, 10V | 2V @ 1mA, 2.4V @ 1mA | 110pF @ 25V 200pF @ 25V | - | - | 200V | N-CHANNEL AND P-CHANNEL | - | - | - | - | - | - | 7Ohm | - | - | - | - | 200V | - | METAL-OXIDE SEMICONDUCTOR | - | Logic Level Gate | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | |
| TC6321T-V/9U | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #TC8020K6-G-M937Twicea Part #536-367-TC8020K6-G-M937 | Microchip Technology |
Trans MOSFET N/P-CH 200V 56-Pin QFN EP T/R
Datasheet
Compare
| 24
In Stock
| Min.:1 Mult.:1 | 20 Weeks | - | Surface Mount | Surface Mount | 56-VFQFN Exposed Pad | - | - | - | 191.387631mg | - | SILICON | - | - | - | - | - | - | - | - | - | - | - | - | - | 6 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 20 ns | - | - | - | - | - | - | - | -55°C~150°C TJ | Tape & Reel (TR) | 2012 | - | - | yes | Active | 3 (168 Hours) | 56 | - | - | - | - | - | - | - | - | - | - | QUAD | NO LEAD | - | - | - | - | - | - | - | - | COMPLEX | 12 | - | - | - | ENHANCEMENT MODE | - | - | 10 ns | - | 6 N and 6 P-Channel | SWITCHING | 8 Ω @ 1A, 10V | 2.4V @ 1mA | 50pF @ 25V | - | 15ns | 200V | N-CHANNEL AND P-CHANNEL | 15 ns | - | 3.2A | - | - | - | 8Ohm | - | - | - | - | 200V | - | METAL-OXIDE SEMICONDUCTOR | - | Standard | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | |
| TC8020K6-G-M937 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #MSCSM70HM19T3AGTwicea Part #536-367-MSCSM70HM19T3AG | Microchip Technology |
PM-MOSFET-SIC-SP3F
Datasheet
Compare
| 2067
In Stock
| Min.:1 Mult.:1 | - | - | - | Chassis Mount | Module | - | - | - | - | - | - | - | Microchip Technology | 124A (Tc) | - | 1 | 124 A | - | Microchip | - | + 175 C | Microchip Technology | - 40 C | Screw Mounts | - | - | - | Bulk | - | - | - | - | - | 365 W | - | Active | - | 19 mOhms | - | - | Details | - | N-Channel | - | 50 ns | 40 ns | - | 700 V | - 10 V, 23 V | 1.9 V | - | -40°C ~ 175°C (TJ) | - | - | - | - | - | - | - | - | - | Full Bridge SiC MOSFET Power Module | - | - | - | - | - | Discrete Semiconductor Modules | - | SiC | - | - | - | - | - | - | - | - | - | - | Full Bridge | - | - | - | - | - | - | - | - | 365W (Tc) | 4 N-Channel (Full Bridge) | - | 19mOhm @ 40A, 20V | 2.4V @ 4mA | 4500pF @ 700V | 215nC @ 20V | 40 ns | 700V | - | - | Discrete Semiconductor Modules | - | - | - | - | - | - | - | - | - | - | - | - | - | Silicon Carbide (SiC) | - | Power MOSFET Modules | - | Discrete Semiconductor Modules | - | - | - | - | - | - | - | - | - | |
| MSCSM70HM19T3AG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #MSCSM120AM16T1AGTwicea Part #536-367-MSCSM120AM16T1AG | Microchip Technology |
PM-MOSFET-SIC-SP1F
Datasheet
Compare
| 2461
In Stock
| Min.:1 Mult.:1 | - | - | - | Chassis Mount | Module | - | - | - | - | - | - | - | Microchip Technology | 173A (Tc) | - | 1 | 173 A | - | Microchip | - | + 175 C | Microchip Technology | - 40 C | Screw Mounts | - | - | - | Bulk | - | - | - | - | - | 745 W | - | Active | - | 16 mOhms | - | - | Details | - | N-Channel | - | 50 ns | 30 ns | - | 1200 V | - 10 V, 23 V | 1.8 V | - | -40°C ~ 175°C (TJ) | - | - | - | - | - | - | - | - | - | Phase Leg SiC MOSFET Power Module | - | - | - | - | - | Discrete Semiconductor Modules | - | SiC | - | - | - | - | - | - | - | - | - | - | Dual | - | - | - | - | - | - | - | - | 745W (Tc) | 2 N Channel (Phase Leg) | - | 16mOhm @ 80A, 20V | 2.8V @ 6mA | 6040pF @ 1000V | 464nC @ 20V | 30 ns | 1200V (1.2kV) | - | - | Discrete Semiconductor Modules | - | - | - | - | - | - | - | - | - | - | - | - | - | Silicon Carbide (SiC) | - | Power MOSFET Modules | - | Discrete Semiconductor Modules | - | - | - | - | - | - | - | - | - | |
| MSCSM120AM16T1AG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #MSCSM70TAM19T3AGTwicea Part #536-367-MSCSM70TAM19T3AG | Microchip Technology |
PM-MOSFET-SIC-SP3F
Datasheet
Compare
| 2551
In Stock
| Min.:1 Mult.:1 | - | - | - | Chassis Mount | Module | - | - | - | - | - | - | - | Microchip Technology | 124A (Tc) | - | 1 | 124 A | - | Microchip | - | + 175 C | Microchip Technology | - 40 C | Screw Mounts | - | - | - | Bulk | - | - | - | - | - | 365 W | - | Active | - | 19 mOhms | - | - | Details | - | N-Channel | - | 50 ns | 40 ns | - | 700 V | - 10 V, 23 V | 1.9 V | - | -40°C ~ 175°C (TJ) | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Discrete Semiconductor Modules | - | - | - | - | - | - | - | - | - | - | - | - | Triple | - | - | - | - | - | - | - | - | 365W (Tc) | 6 N-Channel (Phase Leg) | - | 19mOhm @ 40A, 20V | 2.4V @ 4mA | 4500pF @ 700V | 215nC @ 20V | 40 ns | 700V | - | - | Discrete Semiconductor Modules | - | - | - | - | - | - | - | - | - | - | - | - | - | Silicon Carbide (SiC) | - | Power MOSFET Modules | - | Discrete Semiconductor Modules | - | - | - | - | - | - | - | - | - | |
| MSCSM70TAM19T3AG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #MSCSM170AM15CT3AGTwicea Part #536-367-MSCSM170AM15CT3AG | Microchip Technology |
PM-MOSFET-SIC-SBD-SP3F
Datasheet
Compare
| 2399
In Stock
| Min.:1 Mult.:1 | - | - | - | Chassis Mount | Module | - | - | - | - | - | - | MSCSM170 | Microchip Technology | 181A (Tc) | - | 1 | - | - | Microchip | - | - | Microchip Technology | - | - | - | - | - | Bulk | - | - | - | - | - | - | - | Active | - | - | - | - | Details | - | - | - | - | - | - | - | - | - | - | -40°C ~ 175°C (TJ) | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Discrete Semiconductor Modules | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 862W (Tc) | 2 N Channel (Phase Leg) | - | 15mOhm @ 90A, 20V | 3.2V @ 7.5mA | 9900pF @ 1000V | 534nC @ 20V | - | 1700V (1.7kV) | - | - | Discrete Semiconductor Modules | - | - | - | - | - | - | - | - | - | - | - | - | - | Silicon Carbide (SiC) | - | - | - | Discrete Semiconductor Modules | - | - | - | - | - | - | - | - | - | |
| MSCSM170AM15CT3AG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #MSCSM120AM31TBL1NGTwicea Part #536-367-MSCSM120AM31TBL1NG | Microchip Technology |
PM-MOSFET-SIC-BL1
Datasheet
Compare
| 2874
In Stock
| Min.:1 Mult.:1 | - | - | - | Chassis Mount | Module | - | - | - | - | - | - | - | Microchip Technology | 79A | - | 1 | 79 A | - | Microchip | - | + 175 C | Microchip Technology | - 40 C | Screw Mounts | - | - | - | Bulk | - | - | - | - | - | 310 W | - | Active | - | 31 mOhms | - | - | Details | - | N-Channel | - | 50 ns | 30 ns | - | 1200 V | - 10 V, 23 V | 1.8 V | - | -55°C ~ 175°C (TJ) | - | - | - | - | - | - | - | - | - | Phase Leg SiC MOSFET Power Module | - | - | - | - | - | Discrete Semiconductor Modules | - | SiC | - | - | - | - | - | - | - | - | - | - | Dual | - | - | - | - | - | - | - | - | 310W | 2 N Channel (Phase Leg) | - | 31mOhm @ 40A, 20V | 2.8V @ 3mA | 3020pF @ 1000V | 232nC @ 20V | 30 ns | 1200V (1.2kV) | - | - | Discrete Semiconductor Modules | - | - | - | - | - | - | - | - | - | - | - | - | - | Silicon Carbide (SiC) | - | Power MOSFET Modules | - | Discrete Semiconductor Modules | - | - | - | - | - | - | - | - | - | |
| MSCSM120AM31TBL1NG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #APTC90DSK12T1GTwicea Part #536-367-APTC90DSK12T1G | Microchip |
Trans MOSFET N-CH 900V 30A 12-Pin Case SP1
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | Chassis Mount, Screw | - | CSON | NO | 1 | - | - | 10 | SILICON | - | - | - | 30 A | - | - | MICROSEMI CORP | Microsemi Corporation | APTC90DSK12T1G | - | - | - | - | 2 | -40C to 85C | 150 °C | - | UNSPECIFIED | FLANGE MOUNT, R-XUFM-X10 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | 5(mm) | - | No | - | NOT SPECIFIED | 5.84 | Compliant | Yes | - | 400 ns | - | - | Industrial grade | - | - | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | 150 °C | -40 °C | AVALANCHE RATED, ULTRA-LOW RESISTANCE | FET General Purpose Power | 250 W | - | UPPER | UNSPECIFIED | NOT SPECIFIED | compliant | - | - | 12 | - | R-XUFM-X10 | Not Qualified | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | - | - | - | - | ENHANCEMENT MODE | 250 W | ISOLATED | 70 ns | - | - | SWITCHING | - | - | - | - | 20 ns | 900 V | N-CHANNEL | - | - | 30 A | - | 20 V | 30 A | 0.12 Ω | INDUSTRIALC | - | 75 A | 6.8 nF | 900 V | 1940 mJ | METAL-OXIDE SEMICONDUCTOR | 250 W | - | 120 mΩ | - | - | - | 7(mm) | - | - | - | 1.4(mm) | No | - | - | - | ||
| APTC90DSK12T1G | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #MSCSM120DUM042AGTwicea Part #536-367-MSCSM120DUM042AG | Microchip Technology |
PM-MOSFET-SIC-SP6C
Datasheet
Compare
| 2208
In Stock
| Min.:1 Mult.:1 | - | - | - | Chassis Mount | Module | - | - | - | - | - | - | MSCSM120 | Microchip Technology | 495A (Tc) | - | 1 | - | - | Microchip | - | - | Microchip Technology | - | - | - | - | - | Bulk | - | - | - | - | - | - | - | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | -40°C ~ 175°C (TJ) | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Discrete Semiconductor Modules | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 2031W (Tc) | 2 N-Channel (Dual) Common Source | - | 5.2mOhm @ 240A, 20V | 2.8V @ 6mA | 18100pF @ 1000V | 1392nC @ 20V | - | 1200V (1.2kV) | - | - | Discrete Semiconductor Modules | - | - | - | - | - | - | - | - | - | - | - | - | - | Silicon Carbide (SiC) | - | - | - | Discrete Semiconductor Modules | - | - | - | - | - | - | - | - | - | |
| MSCSM120DUM042AG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #MSCSM120HM16CTBL3NGTwicea Part #536-367-MSCSM120HM16CTBL3NG | Microchip Technology |
PM-MOSFET-SIC-SBD-BL3
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | - | Chassis Mount | Module | - | - | - | - | - | - | MSCSM120 | Microchip Technology / Atmel | 150A | - | 1 | 150 A | - | Microchip | - | + 175 C | Microchip Technology | - 55 C | Screw Mounts | - | - | - | Bulk | - | - | - | - | - | 560 W | - | Active | - | 16 mOhms | - | - | - | - | N-Channel | - | 50 ns | 30 ns | - | 1.2 kV | - 10 V, + 25 V | 1.8 V | 1200 V | -55°C ~ 175°C (TJ) | - | - | - | - | - | - | - | - | - | Dual Phase Leg SiC MOSFET Power Module | - | - | - | - | - | Discrete Semiconductor Modules | - | SiC | - | - | - | - | - | - | - | - | - | - | Full Bridge | - | - | - | - | - | - | - | - | 560W | 4 N-Channel (Phase Leg) | - | 16mOhm @ 80A, 20V | 2.8V @ 2mA | 6040pF @ 1000V | 464nC @ 20V | 30 ns | 1200V | - | - | Discrete Semiconductor Modules | - | - | - | - | - | - | - | - | - | - | - | - | - | Silicon Carbide (SiC) | - | Power MOSFET Modules | 1.5 V at 60 A | Discrete Semiconductor Modules | - | - | - | - | - | - | - | - | - | ||
| MSCSM120HM16CTBL3NG |
Index :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ