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MSCSM170TAM23CTPAG Tech Specifications

Microchip  MSCSM170TAM23CTPAG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package -
Package Bulk
Product Status Active
Current - Continuous Drain (Id) @ 25℃ 122A (Tc)
Base Product Number MSCSM170
Mfr Microchip Technology
Vds - Drain-Source Breakdown Voltage 1.7 kV
Typical Turn-On Delay Time 24 ns
Vgs th - Gate-Source Threshold Voltage 1.8 V
Pd - Power Dissipation 588 W
Maximum Operating Temperature + 175 C
Vgs - Gate-Source Voltage - 10 V, 23 V
Minimum Operating Temperature - 40 C
Factory Pack QuantityFactory Pack Quantity 1
Mounting Styles SMD/SMT
Manufacturer Microchip
Brand Microchip Technology
Rds On - Drain-Source Resistance 17.5 mOhms
Typical Turn-Off Delay Time 35 ns
Id - Continuous Drain Current 122 A
Operating Temperature -40°C ~ 175°C (TJ)
Series -
Subcategory Discrete Semiconductor Modules
Technology Si
Power - Max 588W (Tc)
FET Type 6 N-Channel (Phase Leg)
Rds On (Max) @ Id, Vgs 22.5mOhm @ 60A, 20V
Vgs(th) (Max) @ Id 3.2V @ 5mA
Input Capacitance (Ciss) (Max) @ Vds 6600pF @ 1000V
Gate Charge (Qg) (Max) @ Vgs 356nC @ 20V
Rise Time 17 ns
Drain to Source Voltage (Vdss) 1700V (1.7kV)
Product Type Discrete Semiconductor Modules
FET Feature Silicon Carbide (SiC)
Product Power MOSFET Modules
Vf - Forward Voltage 1.5 V
Product Category Discrete Semiconductor Modules
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