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DN2625DK6-G Tech Specifications
Microchip DN2625DK6-G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
Factory Lead Time | 16 Weeks | |
Mount | Surface Mount | |
Mounting Type | Surface Mount | |
Package / Case | 8-VDFN Exposed Pad | |
Weight | 37.393021mg | |
Transistor Element Material | SILICON | |
Number of Elements | 1 Element | |
Turn Off Delay Time | 10 ns | |
Operating Temperature | -55°C~150°C TJ | |
Packaging | Tray | |
Published | 2013 | |
JESD-609 Code | e3 | |
Part Status | Active | |
Moisture Sensitivity Level (MSL) | 3 (168 Hours) | |
Number of Terminations | 8Terminations | |
ECCN Code | EAR99 | |
Resistance | 3.5Ohm | |
Terminal Finish | MATTE TIN | |
Additional Feature | LOW THRESHOLD | |
Terminal Form | NO LEAD | |
Peak Reflow Temperature (Cel) | 260 | |
Time@Peak Reflow Temperature-Max (s) | 40 | |
JESD-30 Code | R-PDSO-N8 | |
Qualification Status | Not Qualified | |
Number of Channels | 2Channels | |
Voltage | 250V | |
Element Configuration | Dual | |
Current | 11A | |
Case Connection | DRAIN | |
Turn On Delay Time | 10 ns | |
FET Type | 2 N-Channel (Dual) | |
Transistor Application | SWITCHING | |
Rds On (Max) @ Id, Vgs | 3.5 Ω @ 1A, 0V | |
Input Capacitance (Ciss) (Max) @ Vds | 1000pF @ 25V | |
Gate Charge (Qg) (Max) @ Vgs | 7.04nC @ 1.5V | |
Rise Time | 20ns | |
Fall Time (Typ) | 20 ns | |
Continuous Drain Current (ID) | 1.1A | |
Gate to Source Voltage (Vgs) | 20V | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
FET Feature | Depletion Mode | |
RoHS Status | ROHS3 Compliant |
DN2625DK6-G Documents
Download datasheets and manufacturer documentation for DN2625DK6-G
- DatasheetsDN2625
- PCN Design/SpecificationLead-Frame Material Update 26/Aug/2015 DN2625 06/Dec/2016
- PCN PackagingMBB/Label Chgs 16/Nov/2018
- ConflictMineralStatementMicrochip-company-68.pdf
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