Twicea electronic parts stores,electronic components,electronic parts,electronics parts supply Twicea electronic parts stores,electronic components,electronic parts,electronics parts supply
Image Part # Manufacturer Description Availability Pricing Quantity Surface MountNumber of TerminalsTransistor Element MaterialExterior Housing MaterialDrain Current-Max (ID)Ihs ManufacturerNumber of ElementsOperating Temperature-MaxPackage Body MaterialPackage DescriptionPackage ShapePackage StylePart Life Cycle CodePart Package CodeRohs CodeTransition Frequency-Nom (fT)Turn-off Time-Max (toff)Turn-on Time-Max (ton)JESD-609 CodeECCN CodeTerminal FinishHTS CodeTerminal PositionTerminal FormReach Compliance CodePin CountJESD-30 CodeQualification StatusConfigurationOperating ModeCase ConnectionTransistor ApplicationPolarity/Channel TypeJEDEC-95 CodeDrain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)FET TechnologyPower Dissipation-Max (Abs)Collector Current-Max (IC)DC Current Gain-Min (hFE)Feedback Cap-Max (Crss)Power Dissipation Ambient-Max
Samsung Semiconductor MMBTH10
Mfr. Part #
MMBTH10
Twicea Part #
700-375-MMBTH10 		Samsung Semiconductor
Transistor
Datasheet Compare
    Min.:1
    Mult.:1
    		 YES - - 1 - SAMSUNG SEMICONDUCTOR INC - 150 °C - - - - Obsolete - No 650 MHz - - e0 EAR99 Tin/Lead (Sn/Pb) - - - unknown - - - SINGLE - - - NPN - - - - - - 0.225 W 0.1 A 60 - -
    MMBTH10
    MMBTH10

    700-375-MMBTH10 Samsung Semiconductor
    RoHS :
    Package : -
    In Stock : -
    1 : -
    Samsung Semiconductor SSH4N90AS
    Mfr. Part #
    SSH4N90AS
    Twicea Part #
    700-375-SSH4N90AS     		Samsung Semiconductor
    Description: Power Field-Effect Transistor, 4.5A I(D), 900V, 3.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
    Datasheet Compare
      Min.:1
      Mult.:1
      		 NO 3 SILICON - 4.5 A SAMSUNG SEMICONDUCTOR INC 1 150 °C PLASTIC/EPOXY FLANGE MOUNT, R-PSFM-T3 RECTANGULAR FLANGE MOUNT Transferred TO-3P - - 215 ns 120 ns - EAR99 - 8541.29.00.95 SINGLE THROUGH-HOLE unknown 3 R-PSFM-T3 Not Qualified SINGLE WITH BUILT-IN DIODE ENHANCEMENT MODE - - N-CHANNEL - 3.7 Ω 18 A 900 V 536 mJ METAL-OXIDE SEMICONDUCTOR 140 W - - 40 pF 140 W
      SSH4N90AS
      SSH4N90AS

      700-375-SSH4N90AS Samsung Semiconductor
      RoHS :
      Package : -
      In Stock : -
      1 : -
      Samsung Semiconductor IRFS9520
      Mfr. Part #
      IRFS9520
      Twicea Part #
      700-375-IRFS9520       		Samsung Semiconductor
      Power Field-Effect Transistor, 6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN
      Datasheet Compare
        Min.:1
        Mult.:1
        		 NO 3 SILICON - 6 A SAMSUNG SEMICONDUCTOR INC 1 - PLASTIC/EPOXY FLANGE MOUNT, R-PSFM-T3 RECTANGULAR FLANGE MOUNT Obsolete TO-220F - - - - - EAR99 - - SINGLE THROUGH-HOLE unknown 3 R-PSFM-T3 Not Qualified SINGLE ENHANCEMENT MODE ISOLATED - P-CHANNEL TO-220AB 0.6 Ω - 100 V - METAL-OXIDE SEMICONDUCTOR - - - - -
        IRFS9520
        IRFS9520

        700-375-IRFS9520 Samsung Semiconductor
        RoHS :
        Package : -
        In Stock : -
        1 : -
        Samsung Semiconductor SSH5N80A
        Mfr. Part #
        SSH5N80A
        Twicea Part #
        700-375-SSH5N80A         		Samsung Semiconductor
        Power Field-Effect Transistor, 5A I(D), 800V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
        Datasheet Compare
          Min.:1
          Mult.:1
          		 NO 3 SILICON - 5 A SAMSUNG SEMICONDUCTOR INC 1 150 °C PLASTIC/EPOXY FLANGE MOUNT, R-PSFM-T3 RECTANGULAR FLANGE MOUNT Transferred TO-3P - - - - - EAR99 - - SINGLE THROUGH-HOLE unknown 3 R-PSFM-T3 Not Qualified SINGLE WITH BUILT-IN DIODE ENHANCEMENT MODE - - N-CHANNEL - 2.2 Ω 20 A 800 V 333 mJ METAL-OXIDE SEMICONDUCTOR 160 W - - - -
          SSH5N80A
          SSH5N80A

          700-375-SSH5N80A Samsung Semiconductor
          RoHS :
          Package : -
          In Stock : -
          1 : -
          Samsung Semiconductor SFR9110
          Mfr. Part #
          SFR9110
          Twicea Part #
          700-375-SFR9110           		Samsung Semiconductor
          Description: Power Field-Effect Transistor, 2.8A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
          Datasheet Compare
            Min.:1
            Mult.:1
            		 YES 2 SILICON - 2.8 A SAMSUNG SEMICONDUCTOR INC 1 150 °C PLASTIC/EPOXY SMALL OUTLINE, R-PSSO-G2 RECTANGULAR SMALL OUTLINE Transferred - - - - - - EAR99 - - SINGLE GULL WING unknown - R-PSSO-G2 Not Qualified SINGLE WITH BUILT-IN DIODE ENHANCEMENT MODE DRAIN SWITCHING P-CHANNEL - 1.2 Ω 11 A 100 V 31 mJ METAL-OXIDE SEMICONDUCTOR 20 W - - - -
            SFR9110
            SFR9110

            700-375-SFR9110 Samsung Semiconductor
            RoHS :
            Package : -
            In Stock : -
            1 : -
            Samsung Semiconductor SSR1N50
            Mfr. Part #
            SSR1N50
            Twicea Part #
            700-375-SSR1N50             		Samsung Semiconductor
            Description: Power Field-Effect Transistor, 1.2A I(D), 500V, 8.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3
            Datasheet Compare
              Min.:1
              Mult.:1
              		 YES 2 SILICON - 1.2 A SAMSUNG SEMICONDUCTOR INC 1 150 °C PLASTIC/EPOXY SMALL OUTLINE, R-PSSO-G2 RECTANGULAR SMALL OUTLINE Obsolete - - - - - - EAR99 - - SINGLE GULL WING unknown 3 R-PSSO-G2 Not Qualified SINGLE ENHANCEMENT MODE - - N-CHANNEL - 8.5 Ω - 500 V - METAL-OXIDE SEMICONDUCTOR 42 W - - - -
              SSR1N50
              SSR1N50

              700-375-SSR1N50 Samsung Semiconductor
              RoHS :
              Package : -
              In Stock : -
              1 : -
              Samsung Semiconductor SSP1N60A
              Mfr. Part #
              SSP1N60A
              Twicea Part #
              700-375-SSP1N60A               		Samsung Semiconductor
              Power Field-Effect Transistor, 1A I(D), 600V, 12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
              Datasheet Compare
                Min.:1
                Mult.:1
                		 NO 3 SILICON 1 1 A SAMSUNG SEMICONDUCTOR INC - 150 °C PLASTIC/EPOXY TO-220, 3 PIN RECTANGULAR FLANGE MOUNT Transferred TO-220AB - - - - - EAR99 - - SINGLE THROUGH-HOLE unknown 3 R-PSFM-T3 Not Qualified SINGLE WITH BUILT-IN DIODE ENHANCEMENT MODE - - N-CHANNEL TO-220AB 12 Ω 3 A 600 V 44 mJ METAL-OXIDE SEMICONDUCTOR 34 W - - - -
                SSP1N60A
                SSP1N60A

                700-375-SSP1N60A Samsung Semiconductor
                RoHS :
                Package : -
                In Stock : -
                1 : -
                Samsung Semiconductor SSD2106
                Mfr. Part #
                SSD2106
                Twicea Part #
                700-375-SSD2106                 		Samsung Semiconductor
                Power Field-Effect Transistor, 2.5A I(D), 20V, 0.25ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8
                Datasheet Compare
                  Min.:1
                  Mult.:1
                  		 YES 8 SILICON - 2.5 A SAMSUNG SEMICONDUCTOR INC 1 150 °C PLASTIC/EPOXY SMALL OUTLINE, R-PDSO-G8 RECTANGULAR SMALL OUTLINE Obsolete SOT - - - - - EAR99 - - DUAL GULL WING unknown 8 R-PDSO-G8 Not Qualified SINGLE ENHANCEMENT MODE - - P-CHANNEL - 0.25 Ω - 20 V - METAL-OXIDE SEMICONDUCTOR 2.5 W - - - -
                  SSD2106
                  SSD2106

                  700-375-SSD2106 Samsung Semiconductor
                  RoHS :
                  Package : -
                  In Stock : -
                  1 : -
                  Samsung Semiconductor SSH5N80
                  Mfr. Part #
                  SSH5N80
                  Twicea Part #
                  700-375-SSH5N80                   		Samsung Semiconductor
                  Power Field-Effect Transistor, 5A I(D), 800V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
                  Datasheet Compare
                    Min.:1
                    Mult.:1
                    		 NO 3 SILICON - 5 A SAMSUNG SEMICONDUCTOR INC 1 150 °C PLASTIC/EPOXY FLANGE MOUNT, R-PSFM-T3 RECTANGULAR FLANGE MOUNT Obsolete TO-3P - - - - - EAR99 - - SINGLE THROUGH-HOLE unknown 3 R-PSFM-T3 Not Qualified SINGLE ENHANCEMENT MODE - - N-CHANNEL - 2.5 Ω - 800 V - METAL-OXIDE SEMICONDUCTOR 150 W - - - -
                    SSH5N80
                    SSH5N80

                    700-375-SSH5N80 Samsung Semiconductor
                    RoHS :
                    Package : -
                    In Stock : -
                    1 : -
                    Samsung Semiconductor SFR9214
                    Mfr. Part #
                    SFR9214
                    Twicea Part #
                    700-375-SFR9214                     		Samsung Semiconductor
                    Description: Power Field-Effect Transistor, 1.53A I(D), 250V, 4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3
                    Datasheet Compare
                      Min.:1
                      Mult.:1
                      		 YES 2 SILICON - 1.53 A SAMSUNG SEMICONDUCTOR INC 1 150 °C PLASTIC/EPOXY SMALL OUTLINE, R-PSSO-G2 RECTANGULAR SMALL OUTLINE Transferred - - - - - - EAR99 - - SINGLE GULL WING unknown 3 R-PSSO-G2 Not Qualified SINGLE WITH BUILT-IN DIODE ENHANCEMENT MODE DRAIN - P-CHANNEL - 4 Ω 6.1 A 250 V 102 mJ METAL-OXIDE SEMICONDUCTOR 19 W - - - -
                      SFR9214
                      SFR9214

                      700-375-SFR9214 Samsung Semiconductor
                      RoHS :
                      Package : -
                      In Stock : -
                      1 : -
                      Samsung Electro-Mechanics STP15L01F
                      Mfr. Part #
                      STP15L01F
                      Twicea Part #
                      700-375-STP15L01F                       		Samsung Electro-Mechanics
                      -
                      Datasheet Compare
                        Min.:1
                        Mult.:1
                        		 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
                        STP15L01F
                        STP15L01F

                        700-375-STP15L01F Samsung Electro-Mechanics
                        RoHS :
                        Package : -
                        In Stock : -
                        1 : -
                        Samsung Semiconductor MMBT5086
                        Mfr. Part #
                        MMBT5086
                        Twicea Part #
                        700-375-MMBT5086                         		Samsung Semiconductor
                        Transistor
                        Datasheet Compare
                          Min.:1
                          Mult.:1
                          		 YES - - - - SAMSUNG SEMICONDUCTOR INC 1 150 °C - - - - Obsolete - No 40 MHz - - e0 EAR99 Tin/Lead (Sn/Pb) - - - unknown - - - SINGLE - - - PNP - - - - - - 0.225 W 0.05 A - - -
                          MMBT5086
                          MMBT5086

                          700-375-MMBT5086 Samsung Semiconductor
                          RoHS :
                          Package : -
                          In Stock : -
                          1 : -
                          Samsung Semiconductor SSS2N90A
                          Mfr. Part #
                          SSS2N90A
                          Twicea Part #
                          700-375-SSS2N90A                           		Samsung Semiconductor
                          Description: Power Field-Effect Transistor, 1.5A I(D), 900V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN
                          Datasheet Compare
                            Min.:1
                            Mult.:1
                            		 NO 3 SILICON - 1.5 A SAMSUNG SEMICONDUCTOR INC 1 150 °C PLASTIC/EPOXY FLANGE MOUNT, R-PSFM-T3 RECTANGULAR FLANGE MOUNT Transferred TO-220F - - - - - EAR99 - - SINGLE THROUGH-HOLE unknown 3 R-PSFM-T3 Not Qualified SINGLE WITH BUILT-IN DIODE ENHANCEMENT MODE ISOLATED - N-CHANNEL - 7 Ω 8 A 900 V 214 mJ METAL-OXIDE SEMICONDUCTOR 30 W - - - -
                            SSS2N90A
                            SSS2N90A

                            700-375-SSS2N90A Samsung Semiconductor
                            RoHS :
                            Package : -
                            In Stock : -
                            1 : -
                            Samsung Semiconductor SSH6N55
                            Mfr. Part #
                            SSH6N55
                            Twicea Part #
                            700-375-SSH6N55                             		Samsung Semiconductor
                            Power Field-Effect Transistor, 6A I(D), 550V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
                            Datasheet Compare
                              Min.:1
                              Mult.:1
                              		 NO 3 SILICON - 6 A SAMSUNG SEMICONDUCTOR INC 1 150 °C PLASTIC/EPOXY FLANGE MOUNT, R-PSFM-T3 RECTANGULAR FLANGE MOUNT Obsolete TO-3P - - 320 ns 210 ns - EAR99 - 8541.29.00.95 SINGLE THROUGH-HOLE unknown 3 R-PSFM-T3 Not Qualified SINGLE ENHANCEMENT MODE - SWITCHING N-CHANNEL - 1.8 Ω 24 A 550 V 570 mJ METAL-OXIDE SEMICONDUCTOR 125 W - - 150 pF 125 W
                              SSH6N55
                              SSH6N55

                              700-375-SSH6N55 Samsung Semiconductor
                              RoHS :
                              Package : -
                              In Stock : -
                              1 : -
                              Samsung Semiconductor IRF9222
                              Mfr. Part #
                              IRF9222
                              Twicea Part #
                              700-375-IRF9222                               		Samsung Semiconductor
                              Transistor
                              Datasheet Compare
                                Min.:1
                                Mult.:1
                                		 NO - - - 3 A SAMSUNG SEMICONDUCTOR INC 1 150 °C - , - - Obsolete - - - - - - EAR99 - - - - unknown - - - SINGLE ENHANCEMENT MODE - - P-CHANNEL - - - - - METAL-OXIDE SEMICONDUCTOR 40 W - - - -
                                IRF9222
                                IRF9222

                                700-375-IRF9222 Samsung Semiconductor
                                RoHS :
                                Package : -
                                In Stock : -
                                1 : -
                                Samsung Semiconductor SSH7N90
                                Mfr. Part #
                                SSH7N90
                                Twicea Part #
                                700-375-SSH7N90                                 		Samsung Semiconductor
                                Power Field-Effect Transistor, 7A I(D), 900V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
                                Datasheet Compare
                                26 In Stock
                                  Min.:1
                                  Mult.:1
                                  		 NO 3 SILICON - 7 A SAMSUNG SEMICONDUCTOR INC 1 150 °C PLASTIC/EPOXY TO-3P, 3 PIN RECTANGULAR FLANGE MOUNT Obsolete TO-3P - - - - - EAR99 - - SINGLE THROUGH-HOLE unknown 3 R-PSFM-T3 Not Qualified SINGLE ENHANCEMENT MODE - - N-CHANNEL - 1.8 Ω - 900 V - METAL-OXIDE SEMICONDUCTOR 190 W - - - -
                                  SSH7N90
                                  SSH7N90

                                  700-375-SSH7N90 Samsung Semiconductor
                                  RoHS :
                                  Package : -
                                  In Stock : 26
                                  1 : -
                                  Samsung Semiconductor SFS9510
                                  Mfr. Part #
                                  SFS9510
                                  Twicea Part #
                                  700-375-SFS9510                                   		Samsung Semiconductor
                                  Power Field-Effect Transistor, 2.5A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN
                                  Datasheet Compare
                                    Min.:1
                                    Mult.:1
                                    		 NO 3 SILICON - 2.5 A SAMSUNG SEMICONDUCTOR INC 1 175 °C PLASTIC/EPOXY FLANGE MOUNT, R-PSFM-T3 RECTANGULAR FLANGE MOUNT Transferred TO-220AB - - - - - EAR99 - - SINGLE THROUGH-HOLE unknown 3 R-PSFM-T3 Not Qualified SINGLE WITH BUILT-IN DIODE ENHANCEMENT MODE ISOLATED SWITCHING P-CHANNEL TO-220AB 1.2 Ω 10 A 100 V 25 mJ METAL-OXIDE SEMICONDUCTOR 16 W - - - -
                                    SFS9510
                                    SFS9510

                                    700-375-SFS9510 Samsung Semiconductor
                                    RoHS :
                                    Package : -
                                    In Stock : -
                                    1 : -
                                    Samsung Semiconductor IRFP242
                                    Mfr. Part #
                                    IRFP242
                                    Twicea Part #
                                    700-375-IRFP242                                     		Samsung Semiconductor
                                    Description: Power Field-Effect Transistor, 16A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
                                    Datasheet Compare
                                      Min.:1
                                      Mult.:1
                                      		 NO 3 SILICON - 16 A SAMSUNG SEMICONDUCTOR INC 1 150 °C PLASTIC/EPOXY FLANGE MOUNT, R-PSFM-T3 RECTANGULAR FLANGE MOUNT Obsolete TO-3P No - 140 ns 90 ns e0 EAR99 TIN LEAD 8541.29.00.95 SINGLE THROUGH-HOLE unknown 2 R-PSFM-T3 Not Qualified SINGLE WITH BUILT-IN DIODE ENHANCEMENT MODE - SWITCHING N-CHANNEL - 0.22 Ω 64 A 200 V 580 mJ METAL-OXIDE SEMICONDUCTOR 150 W - - - 125 W
                                      IRFP242
                                      IRFP242

                                      700-375-IRFP242 Samsung Semiconductor
                                      RoHS :
                                      Package : -
                                      In Stock : -
                                      1 : -
                                      Samsung Semiconductor SSH10N80
                                      Mfr. Part #
                                      SSH10N80
                                      Twicea Part #
                                      700-375-SSH10N80                                       		Samsung Semiconductor
                                      Power Field-Effect Transistor, 10A I(D), 800V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
                                      Datasheet Compare
                                        Min.:1
                                        Mult.:1
                                        		 NO 3 SILICON - 10 A SAMSUNG SEMICONDUCTOR INC 1 150 °C PLASTIC/EPOXY TO-3P, 3 PIN RECTANGULAR FLANGE MOUNT Obsolete TO-3P - - - - - EAR99 - - SINGLE THROUGH-HOLE unknown 3 R-PSFM-T3 Not Qualified SINGLE ENHANCEMENT MODE - - N-CHANNEL - 1.2 Ω - 800 V - METAL-OXIDE SEMICONDUCTOR 230 W - - - -
                                        SSH10N80
                                        SSH10N80

                                        700-375-SSH10N80 Samsung Semiconductor
                                        RoHS :
                                        Package : -
                                        In Stock : -
                                        1 : -
                                        Samsung Semiconductor SSH10N60
                                        Mfr. Part #
                                        SSH10N60
                                        Twicea Part #
                                        700-375-SSH10N60                                         		Samsung Semiconductor
                                        Power Field-Effect Transistor, 10A I(D), 600V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
                                        Datasheet Compare
                                          Min.:1
                                          Mult.:1
                                          		 NO 3 SILICON - 10 A SAMSUNG SEMICONDUCTOR INC 1 150 °C PLASTIC/EPOXY FLANGE MOUNT, R-PSFM-T3 RECTANGULAR FLANGE MOUNT Obsolete TO-3P - - - - - EAR99 - - SINGLE THROUGH-HOLE unknown 3 R-PSFM-T3 Not Qualified SINGLE ENHANCEMENT MODE - - N-CHANNEL - 0.8 Ω - 600 V - METAL-OXIDE SEMICONDUCTOR 190 W - - - -
                                          SSH10N60
                                          SSH10N60

                                          700-375-SSH10N60 Samsung Semiconductor
                                          RoHS :
                                          Package : -
                                          In Stock : -
                                          1 : -

                                          Discrete Semiconductor Products

                                          Transistors - Special Purpose definition: Transistors - Special Purpose Product Listing: MMBTH10,SSH4N90AS,IRFS9520,SSH5N80A,SFR9110.Discrete Semiconductor Products type:Diodes - Zener - Single(126889),Diodes - Rectifiers - Single(107990),Transistors - FETs, MOSFETs - Single(66871),Transistors - Bipolar (BJT) - Single(41289),Diodes - Bridge Rectifiers(23480) .Transistors - Special Purpose has 126 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Twicea.