Samsung Semiconductor SSH7N90 Specialized Transistors
SSH7N90
2107-375-SSH7N90
RoHS Compliant
Power Field-Effect Transistor, 7A I(D), 900V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
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SSH7N90 Tech Specifications
Samsung SSH7N90 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Surface Mount | NO | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Part Package Code | TO-3P | |
| Package Description | TO-3P, 3 PIN | |
| Drain Current-Max (ID) | 7 A | |
| Number of Elements | 1 Element | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| ECCN Code | EAR99 | |
| Terminal Position | SINGLE | |
| Terminal Form | THROUGH-HOLE | |
| Reach Compliance Code | unknown | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSFM-T3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Operating Mode | ENHANCEMENT MODE | |
| Polarity/Channel Type | N-CHANNEL | |
| Drain-source On Resistance-Max | 1.8 Ω | |
| DS Breakdown Voltage-Min | 900 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 190 W |
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