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| Image | Part # | Manufacturer | Description | Availability | Pricing | Quantity | Surface Mount | Number of Terminals | Transistor Element Material | Drain Current-Max (ID) | Ihs Manufacturer | Number of Elements | Operating Temperature-Max | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Rohs Code | Turn-off Time-Max (toff) | Turn-on Time-Max (ton) | JESD-609 Code | ECCN Code | Terminal Finish | Additional Feature | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | JESD-30 Code | Qualification Status | Configuration | Operating Mode | Case Connection | Transistor Application | Polarity/Channel Type | JEDEC-95 Code | Drain-source On Resistance-Max | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | Power Dissipation-Max (Abs) | Feedback Cap-Max (Crss) | Power Dissipation Ambient-Max |
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  | Mfr. Part #APT5020JNTwicea Part #3044-375-APT5020JN | Advanced Power Technology |
Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET
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| Min.:1 Mult.:1 | - | - | - | 28 A | ADVANCED POWER TECHNOLOGY INC | 1 | 150 °C | - | , | - | - | Obsolete | - | - | - | - | EAR99 | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | 360 W | - | - | ||
| APT5020JN | |||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #APT751R4BNTwicea Part #3044-375-APT751R4BN | Advanced Power Technology |
Power Field-Effect Transistor, 8.5A I(D), 750V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN
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| Min.:1 Mult.:1 | NO | 3 | SILICON | 8.5 A | ADVANCED POWER TECHNOLOGY INC | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | No | 120 ns | 55 ns | e0 | EAR99 | TIN LEAD | - | 8541.29.00.95 | SINGLE | THROUGH-HOLE | - | unknown | - | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | - | N-CHANNEL | TO-247AD | 1.4 Ω | 34 A | 750 V | - | METAL-OXIDE SEMICONDUCTOR | 240 W | 127 pF | 240 W | ||
| APT751R4BN | |||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #APT1204R7KLLTwicea Part #3044-375-APT1204R7KLL | Advanced Power Technology |
Description: Power Field-Effect Transistor, 3.5A I(D), 1200V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Datasheet
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| Min.:1 Mult.:1 | NO | 3 | SILICON | 3.5 A | ADVANCED POWER TECHNOLOGY INC | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | No | - | - | e0 | EAR99 | TIN LEAD | - | - | SINGLE | THROUGH-HOLE | - | unknown | - | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | TO-220AB | 4.7 Ω | 14 A | 1200 V | 425 mJ | METAL-OXIDE SEMICONDUCTOR | 135 W | - | - | ||
| APT1204R7KLL | |||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #APT5020HJNTwicea Part #3044-375-APT5020HJN | Advanced Power Technology |
Power Field-Effect Transistor, 28A I(D), 500V, 0.2ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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| Min.:1 Mult.:1 | NO | 5 | SILICON | 28 A | ADVANCED POWER TECHNOLOGY INC | 2 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PUFM-X5 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | 237 ns | 124 ns | - | EAR99 | - | - | 8541.29.00.95 | UPPER | UNSPECIFIED | - | unknown | - | R-PUFM-X5 | Not Qualified | SERIES, 2 ELEMENTS WITH BUILT-IN DIODE | ENHANCEMENT MODE | ISOLATED | SWITCHING | N-CHANNEL | - | 0.2 Ω | 112 A | 500 V | - | METAL-OXIDE SEMICONDUCTOR | 360 W | 350 pF | 360 W | ||
| APT5020HJN | |||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #APT4030BNRTwicea Part #3044-375-APT4030BNR | Advanced Power Technology |
Power Field-Effect Transistor, 18.5A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
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| Min.:1 Mult.:1 | NO | 3 | SILICON | 18.5 A | ADVANCED POWER TECHNOLOGY INC | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | No | - | - | e0 | EAR99 | TIN LEAD | - | 8541.29.00.95 | SINGLE | THROUGH-HOLE | - | unknown | - | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | - | N-CHANNEL | TO-247AD | 0.3 Ω | 74 A | 400 V | 800 mJ | METAL-OXIDE SEMICONDUCTOR | 240 W | - | 240 W | ||
| APT4030BNR | |||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #APT752RBNTwicea Part #3044-375-APT752RBN | Advanced Power Technology |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Datasheet
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| Min.:1 Mult.:1 | NO | - | - | 6 A | ADVANCED POWER TECHNOLOGY INC | 1 | - | - | , | - | - | Obsolete | No | - | - | e0 | EAR99 | Tin/Lead (Sn/Pb) | - | - | - | - | - | unknown | - | - | - | SINGLE | ENHANCEMENT MODE | - | - | N-CHANNEL | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | 180 W | - | - | ||
| APT752RBN | |||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #APT3540BNTwicea Part #3044-375-APT3540BN | Advanced Power Technology |
Description: Power Field-Effect Transistor, 16A I(D), 350V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN
Datasheet
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| Min.:1 Mult.:1 | NO | 3 | SILICON | 16 A | ADVANCED POWER TECHNOLOGY INC | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | No | 127 ns | 72 ns | e0 | EAR99 | TIN LEAD | - | 8541.29.00.95 | SINGLE | THROUGH-HOLE | - | unknown | - | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | - | N-CHANNEL | TO-247AD | 0.4 Ω | 64 A | 350 V | - | METAL-OXIDE SEMICONDUCTOR | 240 W | 240 pF | 240 W | ||
| APT3540BN | |||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #APT30M40LVRTwicea Part #3044-375-APT30M40LVR | Advanced Power Technology |
Description: Power Field-Effect Transistor, 76A I(D), 300V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN
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| Min.:1 Mult.:1 | NO | 3 | SILICON | 76 A | ADVANCED POWER TECHNOLOGY INC | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Transferred | No | - | - | e0 | EAR99 | TIN LEAD | HIGH VOLTAGE | - | SINGLE | THROUGH-HOLE | - | unknown | - | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | TO-264AA | 0.04 Ω | 304 A | 300 V | 2500 mJ | METAL-OXIDE SEMICONDUCTOR | 520 W | - | - | ||
| APT30M40LVR | |||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #APT5010JLCTwicea Part #3044-375-APT5010JLC | Advanced Power Technology |
Power Field-Effect Transistor, 44A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4
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| Min.:1 Mult.:1 | NO | 4 | SILICON | 44 A | ADVANCED POWER TECHNOLOGY INC | 1 | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PUFM-X4 | RECTANGULAR | FLANGE MOUNT | Obsolete | Yes | - | - | - | EAR99 | - | FAST SWITCHING | - | UPPER | UNSPECIFIED | NOT SPECIFIED | unknown | NOT SPECIFIED | R-PUFM-X4 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | ISOLATED | SWITCHING | N-CHANNEL | - | 0.1 Ω | 176 A | 500 V | 2500 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | ||
| APT5010JLC | |||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #APT10M13JNRTwicea Part #3044-375-APT10M13JNR | Advanced Power Technology |
Power Field-Effect Transistor, 150A I(D), 100V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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| Min.:1 Mult.:1 | NO | 4 | SILICON | 150 A | ADVANCED POWER TECHNOLOGY INC | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PUFM-D4 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | 290 ns | 150 ns | - | EAR99 | - | - | 8541.29.00.95 | UPPER | SOLDER LUG | - | unknown | - | R-PUFM-D4 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | ISOLATED | SWITCHING | N-CHANNEL | - | 0.013 Ω | 600 A | 100 V | 1500 mJ | METAL-OXIDE SEMICONDUCTOR | 520 W | 2250 pF | 520 W | ||
| APT10M13JNR | |||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #APT10M25SVRTwicea Part #3044-375-APT10M25SVR | Advanced Power Technology |
Power Field-Effect Transistor, 75A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3
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| Min.:1 Mult.:1 | YES | 2 | SILICON | 75 A | ADVANCED POWER TECHNOLOGY INC | 1 | 150 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-G2 | RECTANGULAR | SMALL OUTLINE | Transferred | No | - | - | e0 | EAR99 | TIN LEAD | HIGH VOLTAGE | - | SINGLE | GULL WING | - | unknown | - | R-PSSO-G2 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | 0.025 Ω | 300 A | 100 V | 1500 mJ | METAL-OXIDE SEMICONDUCTOR | 300 W | - | - | ||
| APT10M25SVR | |||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #APT7575BNTwicea Part #3044-375-APT7575BN | Advanced Power Technology |
Power Field-Effect Transistor, 13A I(D), 750V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
Datasheet
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| Min.:1 Mult.:1 | NO | 3 | SILICON | 13 A | ADVANCED POWER TECHNOLOGY INC | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | No | 142 ns | 63 ns | e0 | EAR99 | Tin/Lead (Sn/Pb) | - | 8541.29.00.95 | SINGLE | THROUGH-HOLE | - | unknown | - | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | - | N-CHANNEL | TO-247AD | 0.75 Ω | 52 A | 750 V | - | METAL-OXIDE SEMICONDUCTOR | 310 W | 180 pF | 310 W | ||
| APT7575BN | |||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #APT6040BNRTwicea Part #3044-375-APT6040BNR | Advanced Power Technology |
Power Field-Effect Transistor, 18A I(D), 600V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
Datasheet
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| Min.:1 Mult.:1 | NO | 3 | SILICON | 18 A | ADVANCED POWER TECHNOLOGY INC | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | No | 205 ns | 66 ns | e0 | EAR99 | Tin/Lead (Sn/Pb) | AVALANCHE RATED | 8541.29.00.95 | SINGLE | THROUGH-HOLE | - | unknown | - | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | - | N-CHANNEL | TO-247AD | 0.4 Ω | 72 A | 600 V | 1210 mJ | METAL-OXIDE SEMICONDUCTOR | 310 W | 225 pF | 310 W | ||
| APT6040BNR | |||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #APT903R5DNTwicea Part #3044-375-APT903R5DN | Advanced Power Technology |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Datasheet
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| Min.:1 Mult.:1 | YES | - | - | 4.5 A | ADVANCED POWER TECHNOLOGY INC | 1 | - | - | , | - | - | Obsolete | - | - | - | - | EAR99 | - | - | - | - | - | - | unknown | - | - | - | SINGLE | ENHANCEMENT MODE | - | - | N-CHANNEL | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | 180 W | - | - | ||
| APT903R5DN | |||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #APT5010B2LCTwicea Part #3044-375-APT5010B2LC | Advanced Power Technology |
Power Field-Effect Transistor, 47A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3
Datasheet
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| Min.:1 Mult.:1 | NO | 3 | SILICON | 47 A | ADVANCED POWER TECHNOLOGY INC | 1 | - | PLASTIC/EPOXY | IN-LINE, R-PSIP-T3 | RECTANGULAR | IN-LINE | Obsolete | - | - | - | - | EAR99 | - | HIGH VOLTAGE | - | SINGLE | THROUGH-HOLE | - | unknown | - | R-PSIP-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | 0.1 Ω | 188 A | 500 V | 2500 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | ||
| APT5010B2LC | |||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #APT903R5BNTwicea Part #3044-375-APT903R5BN | Advanced Power Technology |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Datasheet
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| Min.:1 Mult.:1 | NO | - | - | 4.5 A | ADVANCED POWER TECHNOLOGY INC | 1 | - | - | , | - | - | Obsolete | No | - | - | e0 | EAR99 | Tin/Lead (Sn/Pb) | - | - | - | - | - | unknown | - | - | - | SINGLE | ENHANCEMENT MODE | - | - | N-CHANNEL | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | 180 W | - | - | ||
| APT903R5BN | |||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #APTX100EDTwicea Part #3044-375-APTX100ED | Advanced Power Technology |
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| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| APTX100ED | |||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #APT6017LLLTwicea Part #3044-375-APT6017LLL | Advanced Power Technology |
Description: Power Field-Effect Transistor, 35A I(D), 600V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN
Datasheet
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| Min.:1 Mult.:1 | NO | 3 | SILICON | 35 A | ADVANCED POWER TECHNOLOGY INC | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Transferred | No | - | - | e0 | EAR99 | TIN LEAD | - | - | SINGLE | THROUGH-HOLE | - | unknown | - | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | TO-264AA | 0.17 Ω | 140 A | 600 V | 1600 mJ | METAL-OXIDE SEMICONDUCTOR | 500 W | - | - | ||
| APT6017LLL | |||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #APT551R6BNTwicea Part #3044-375-APT551R6BN | Advanced Power Technology |
Power Field-Effect Transistor, 6.5A I(D), 550V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
Datasheet
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| Min.:1 Mult.:1 | NO | 3 | SILICON | 6.5 A | ADVANCED POWER TECHNOLOGY INC | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | No | 71 ns | 44 ns | e0 | EAR99 | TIN LEAD | - | 8541.29.00.95 | SINGLE | THROUGH-HOLE | - | unknown | - | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | - | N-CHANNEL | TO-247AD | 1.6 Ω | 26 A | 550 V | - | METAL-OXIDE SEMICONDUCTOR | 180 W | 81 pF | 180 W | ||
| APT551R6BN | |||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #APT4020BNTwicea Part #3044-375-APT4020BN | Advanced Power Technology |
Power Field-Effect Transistor, 26A I(D), 400V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
Datasheet
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| Min.:1 Mult.:1 | NO | 3 | SILICON | 26 A | ADVANCED POWER TECHNOLOGY INC | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | No | 170 ns | 85 ns | e0 | EAR99 | TIN LEAD | - | 8541.29.00.95 | SINGLE | THROUGH-HOLE | - | unknown | - | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | TO-247AD | 0.2 Ω | 104 A | 400 V | - | METAL-OXIDE SEMICONDUCTOR | 310 W | 310 pF | 310 W | ||
| APT4020BN |
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