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| Image | Part # | Manufacturer | Description | Availability | Pricing | Quantity | Surface Mount | Number of Terminals | Transistor Element Material | Drain Current-Max (ID) | Ihs Manufacturer | Number of Elements | Operating Temperature-Max | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Rohs Code | Turn-off Time-Max (toff) | Turn-on Time-Max (ton) | JESD-609 Code | ECCN Code | Terminal Finish | Additional Feature | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Reference Standard | JESD-30 Code | Qualification Status | Configuration | Operating Mode | Case Connection | Transistor Application | Polarity/Channel Type | JEDEC-95 Code | Drain-source On Resistance-Max | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | Power Dissipation-Max (Abs) | Feedback Cap-Max (Crss) | Power Dissipation Ambient-Max |
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  | Mfr. Part #APT902R4BNTwicea Part #3044-375-APT902R4BN | Advanced Power Technology |
Description: Power Field-Effect Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | NO | 3 | SILICON | 6.5 A | ADVANCED POWER TECHNOLOGY INC | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | No | 119 ns | 54 ns | e0 | EAR99 | Tin/Lead (Sn/Pb) | - | 8541.29.00.95 | SINGLE | THROUGH-HOLE | - | unknown | - | - | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | - | N-CHANNEL | TO-247AD | 2.4 Ω | 26 A | 900 V | - | METAL-OXIDE SEMICONDUCTOR | 240 W | 120 pF | 240 W | ||
| APT902R4BN | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #APT10M11LVFRTwicea Part #3044-375-APT10M11LVFR | Advanced Power Technology |
Description: Power Field-Effect Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | NO | 3 | SILICON | 100 A | ADVANCED POWER TECHNOLOGY INC | 1 | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Transferred | No | - | - | - | EAR99 | - | - | - | SINGLE | THROUGH-HOLE | NOT SPECIFIED | unknown | NOT SPECIFIED | - | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | TO-264AA | 0.011 Ω | 400 A | 100 V | 2500 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | ||
| APT10M11LVFR | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #APT6017LLLTwicea Part #3044-375-APT6017LLL | Advanced Power Technology |
Description: Power Field-Effect Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | NO | 3 | SILICON | 35 A | ADVANCED POWER TECHNOLOGY INC | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Transferred | No | - | - | e0 | EAR99 | TIN LEAD | - | - | SINGLE | THROUGH-HOLE | - | unknown | - | - | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | TO-264AA | 0.17 Ω | 140 A | 600 V | 1600 mJ | METAL-OXIDE SEMICONDUCTOR | 500 W | - | - | ||
| APT6017LLL | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #APT5012JNU3Twicea Part #3044-375-APT5012JNU3 | Advanced Power Technology |
Description: Power Field-Effect Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | NO | 4 | SILICON | 43 A | ADVANCED POWER TECHNOLOGY INC | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PUFM-D4 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | - | - | EAR99 | - | MOTOR DRIVE BUCK CONFIGURATION | 8541.29.00.95 | UPPER | SOLDER LUG | - | unknown | - | - | R-PUFM-D4 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | ISOLATED | - | N-CHANNEL | - | 0.12 Ω | - | 1000 V | - | METAL-OXIDE SEMICONDUCTOR | 520 W | - | 520 W | ||
| APT5012JNU3 | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #APT47N60BCFTwicea Part #3044-375-APT47N60BCF | Advanced Power Technology |
Description: Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | - | - | ADVANCED POWER TECHNOLOGY INC | - | - | - | - | - | - | Transferred | - | - | - | - | EAR99 | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| APT47N60BCF | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #APT601R3BNTwicea Part #3044-375-APT601R3BN | Advanced Power Technology |
Power Field-Effect Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | NO | 3 | SILICON | 7.5 A | ADVANCED POWER TECHNOLOGY INC | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | No | 71 ns | 44 ns | e0 | EAR99 | TIN LEAD | - | 8541.29.00.95 | SINGLE | THROUGH-HOLE | - | unknown | - | - | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | - | N-CHANNEL | TO-247AD | 1.3 Ω | 30 A | 600 V | - | METAL-OXIDE SEMICONDUCTOR | 180 W | 81 pF | 180 W | ||
| APT601R3BN | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #APT5010B2LCTwicea Part #3044-375-APT5010B2LC | Advanced Power Technology |
Power Field-Effect Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | NO | 3 | SILICON | 47 A | ADVANCED POWER TECHNOLOGY INC | 1 | - | PLASTIC/EPOXY | IN-LINE, R-PSIP-T3 | RECTANGULAR | IN-LINE | Obsolete | - | - | - | - | EAR99 | - | HIGH VOLTAGE | - | SINGLE | THROUGH-HOLE | - | unknown | - | - | R-PSIP-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | 0.1 Ω | 188 A | 500 V | 2500 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | ||
| APT5010B2LC | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #APT903R5BNTwicea Part #3044-375-APT903R5BN | Advanced Power Technology |
Power Field-Effect Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | NO | - | - | 4.5 A | ADVANCED POWER TECHNOLOGY INC | 1 | - | - | , | - | - | Obsolete | No | - | - | e0 | EAR99 | Tin/Lead (Sn/Pb) | - | - | - | - | - | unknown | - | - | - | - | SINGLE | ENHANCEMENT MODE | - | - | N-CHANNEL | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | 180 W | - | - | ||
| APT903R5BN | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #APTX100EDTwicea Part #3044-375-APTX100ED | Advanced Power Technology |
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Datasheet
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| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| APTX100ED | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #IRF622Twicea Part #3044-375-IRF622 | Advanced Microelectronic Products Inc |
Power Field-Effect Transistor
Datasheet
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| Min.:1 Mult.:1 | NO | - | - | 4 A | ADVANCED MICROELECTRONIC PRODUCTS INC | 1 | 150 °C | - | , | - | - | Contact Manufacturer | - | - | - | - | EAR99 | - | - | - | - | - | - | unknown | - | - | - | - | SINGLE | ENHANCEMENT MODE | - | - | N-CHANNEL | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | 40 W | - | - | ||
| IRF622 | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #APT6040BNRTwicea Part #3044-375-APT6040BNR | Advanced Power Technology |
Power Field-Effect Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | NO | 3 | SILICON | 18 A | ADVANCED POWER TECHNOLOGY INC | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | No | 205 ns | 66 ns | e0 | EAR99 | Tin/Lead (Sn/Pb) | AVALANCHE RATED | 8541.29.00.95 | SINGLE | THROUGH-HOLE | - | unknown | - | - | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | - | N-CHANNEL | TO-247AD | 0.4 Ω | 72 A | 600 V | 1210 mJ | METAL-OXIDE SEMICONDUCTOR | 310 W | 225 pF | 310 W | ||
| APT6040BNR | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #APT5017BLCTwicea Part #3044-375-APT5017BLC | Advanced Power Technology |
Power Field-Effect Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | NO | 3 | SILICON | 30 A | ADVANCED POWER TECHNOLOGY INC | 1 | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | - | - | EAR99 | - | HIGH VOLTAGE, AVALANCHE RATING | - | SINGLE | THROUGH-HOLE | - | unknown | - | - | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | TO-247 | 0.17 Ω | 120 A | 500 V | 1300 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | ||
| APT5017BLC | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #APT30M40LVRTwicea Part #3044-375-APT30M40LVR | Advanced Power Technology |
Description: Power Field-Effect Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | NO | 3 | SILICON | 76 A | ADVANCED POWER TECHNOLOGY INC | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Transferred | No | - | - | e0 | EAR99 | TIN LEAD | HIGH VOLTAGE | - | SINGLE | THROUGH-HOLE | - | unknown | - | - | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | TO-264AA | 0.04 Ω | 304 A | 300 V | 2500 mJ | METAL-OXIDE SEMICONDUCTOR | 520 W | - | - | ||
| APT30M40LVR | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #APT5010JLCTwicea Part #3044-375-APT5010JLC | Advanced Power Technology |
Power Field-Effect Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | NO | 4 | SILICON | 44 A | ADVANCED POWER TECHNOLOGY INC | 1 | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PUFM-X4 | RECTANGULAR | FLANGE MOUNT | Obsolete | Yes | - | - | - | EAR99 | - | FAST SWITCHING | - | UPPER | UNSPECIFIED | NOT SPECIFIED | unknown | NOT SPECIFIED | - | R-PUFM-X4 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | ISOLATED | SWITCHING | N-CHANNEL | - | 0.1 Ω | 176 A | 500 V | 2500 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | ||
| APT5010JLC | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #APT5513JFLLTwicea Part #3044-375-APT5513JFLL | Advanced Power Technology |
Description: Power Field-Effect Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | NO | 4 | SILICON | 35 A | ADVANCED POWER TECHNOLOGY INC | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PUFM-X4 | RECTANGULAR | FLANGE MOUNT | Transferred | Yes | - | - | - | EAR99 | - | - | - | UPPER | UNSPECIFIED | NOT SPECIFIED | unknown | NOT SPECIFIED | UL RECOGNIZED | R-PUFM-X4 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | ISOLATED | SWITCHING | N-CHANNEL | - | 0.13 Ω | 140 A | 550 V | 1600 mJ | METAL-OXIDE SEMICONDUCTOR | 379 W | - | - | ||
| APT5513JFLL | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #APT3565BNTwicea Part #3044-375-APT3565BN | Advanced Power Technology |
Power Field-Effect Transistor
Datasheet
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| Min.:1 Mult.:1 | NO | 3 | SILICON | 11 A | ADVANCED POWER TECHNOLOGY INC | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | No | 75 ns | 52 ns | e0 | EAR99 | TIN LEAD | - | 8541.29.00.95 | SINGLE | THROUGH-HOLE | - | unknown | - | - | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | - | N-CHANNEL | TO-247AD | 0.65 Ω | 44 A | 350 V | - | METAL-OXIDE SEMICONDUCTOR | 180 W | 115 pF | 180 W | ||
| APT3565BN | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #APT3525BNTwicea Part #3044-375-APT3525BN | Advanced Power Technology |
Power Field-Effect Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | NO | 3 | SILICON | 23 A | ADVANCED POWER TECHNOLOGY INC | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | No | 170 ns | 85 ns | e0 | EAR99 | Tin/Lead (Sn/Pb) | - | 8541.29.00.95 | SINGLE | THROUGH-HOLE | - | unknown | - | - | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | - | N-CHANNEL | TO-247AD | 0.25 Ω | 92 A | 350 V | - | METAL-OXIDE SEMICONDUCTOR | 310 W | 310 pF | 310 W | ||
| APT3525BN | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #APT3555DNTwicea Part #3044-375-APT3555DN | Advanced Power Technology |
Power Field-Effect Transistor
Datasheet
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| Min.:1 Mult.:1 | YES | - | - | 12 A | ADVANCED POWER TECHNOLOGY INC | 1 | - | - | , | - | - | Obsolete | - | - | - | - | EAR99 | - | - | - | - | - | - | unknown | - | - | - | - | SINGLE | ENHANCEMENT MODE | - | - | N-CHANNEL | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | 180 W | - | - | ||
| APT3555DN | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #APT50M80JLCTwicea Part #3044-375-APT50M80JLC | Advanced Power Technology |
Power Field-Effect Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | NO | 4 | SILICON | 52 A | ADVANCED POWER TECHNOLOGY INC | 1 | - | PLASTIC/EPOXY | ISOTOP-4 | RECTANGULAR | FLANGE MOUNT | Obsolete | Yes | - | - | - | EAR99 | - | FAST SWITCHING | - | UPPER | UNSPECIFIED | NOT SPECIFIED | unknown | NOT SPECIFIED | - | R-PUFM-X4 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | ISOLATED | SWITCHING | N-CHANNEL | - | 0.08 Ω | 208 A | 500 V | 3000 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | ||
| APT50M80JLC | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #APT5085BNTwicea Part #3044-375-APT5085BN | Advanced Power Technology |
Power Field-Effect Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | NO | 3 | SILICON | 9.5 A | ADVANCED POWER TECHNOLOGY INC | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | No | 70 ns | 48 ns | e0 | EAR99 | TIN LEAD | - | 8541.29.00.95 | SINGLE | THROUGH-HOLE | - | unknown | - | - | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | - | N-CHANNEL | TO-247AD | 0.85 Ω | 38 A | 500 V | - | METAL-OXIDE SEMICONDUCTOR | 180 W | 94 pF | 180 W | ||
| APT5085BN |
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