Advanced Power Technology APT5020HJN Specialized Transistors
APT5020HJN
42-375-APT5020HJN
RoHS Compliant
Power Field-Effect Transistor, 28A I(D), 500V, 0.2ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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APT5020HJN Tech Specifications
Advanced APT5020HJN technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Surface Mount | NO | |
| Number of Terminals | 5Terminals | |
| Transistor Element Material | SILICON | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ADVANCED POWER TECHNOLOGY INC | |
| Package Description | FLANGE MOUNT, R-PUFM-X5 | |
| Drain Current-Max (ID) | 28 A | |
| Number of Elements | 2 Elements | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Turn-off Time-Max (toff) | 237 ns | |
| Turn-on Time-Max (ton) | 124 ns | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Terminal Position | UPPER | |
| Terminal Form | UNSPECIFIED | |
| Reach Compliance Code | unknown | |
| JESD-30 Code | R-PUFM-X5 | |
| Qualification Status | Not Qualified | |
| Configuration | SERIES, 2 ELEMENTS WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | ISOLATED | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| Drain-source On Resistance-Max | 0.2 Ω | |
| Pulsed Drain Current-Max (IDM) | 112 A | |
| DS Breakdown Voltage-Min | 500 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 360 W | |
| Feedback Cap-Max (Crss) | 350 pF | |
| Power Dissipation Ambient-Max | 360 W |
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