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Image Part # Manufacturer Description Availability Pricing Quantity Factory Lead TimeMountMounting TypePackage / CaseSurface MountNumber of PinsSupplier Device PackageNumber of TerminalsTransistor Element MaterialBase Product NumberBrandCollector Current (DC)Collector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageContinuous Collector Current at 25 CContinuous Collector Current Ic MaxCurrent-Collector (Ic) (Max)Factory Pack QuantityFactory Pack QuantityGate to Emitter Voltage (Max)Ihs ManufacturerManufacturerManufacturer Part NumberMaximum Gate Emitter VoltageMaximum Operating TemperatureMfrMinimum Operating TemperatureMountingMounting StylesNumber of ElementsOperating Temperature (Max.)Operating Temperature (Min.)Operating Temperature ClassificationOperating Temperature-MaxPackagePackage Body MaterialPackage DescriptionPackage ShapePackage StylePackage TypePart Life Cycle CodePart Package CodePd - Power DissipationProduct StatusRad HardenedRisk RankRoHSRohs CodeTest ConditionsTurn-off Time-Nom (toff)Turn-on Time-Nom (ton)Unit WeightOperating TemperaturePackagingSeriesECCN CodeMax Operating TemperatureMin Operating TemperatureAdditional FeatureHTS CodeSubcategoryTechnologyTerminal PositionTerminal FormReach Compliance CodePin CountJESD-30 CodeQualification StatusConfigurationElement ConfigurationPower DissipationCase ConnectionInput TypePower - MaxTransistor ApplicationPolarity/Channel TypeProduct TypeCollector Emitter Voltage (VCEO)Max Collector CurrentVoltage - Collector Emitter Breakdown (Max)Channel TypePower Dissipation-Max (Abs)Vce(on) (Max) @ Vge, IcCollector Current-Max (IC)Continuous Collector CurrentIGBT TypeCollector-Emitter Voltage-MaxGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyGate-Emitter Voltage-MaxVCEsat-MaxGate-Emitter Thr Voltage-MaxReverse Recovery Time (trr)Power Dissipation Ambient-MaxFall Time-Max (tf)Product CategoryLead Free
Toshiba Semiconductor and Storage GT50J341,Q
Mfr. Part #
GT50J341,Q
Twicea Part #
4669-372-GT50J341,Q 		Toshiba Semiconductor and Storage
PB-F IGBT / TRANSISTOR TO-3PN IC
Datasheet Compare
7 In Stock
    Min.:1
    Mult.:1
    		 12 Weeks - Through Hole TO-3P-3, SC-65-3 - - TO-3P(N) - - - Toshiba - 600 V 1.6 V 50 A 100 A 50 A 50 - TOSHIBA CORP Toshiba GT50J341,Q - 25 V, + 25 V + 175 C Toshiba Semiconductor and Storage - 55 C - Through Hole - - - - - Tube - , - - - Active - 200 W Active - 5.67 Details - - - - - 175°C (TJ) Tube - - - - - - IGBTs Si - - unknown - - - Single - - - Standard 200 W - - IGBT Transistors - - 600 V - - 2.2V @ 15V, 50A - - - - - 100 A - - - - - - - - IGBT Transistors -
    GT50J341,Q
    GT50J341,Q

    4669-372-GT50J341,Q Toshiba Semiconductor and Storage
    RoHS :
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    In Stock : 7
    1 : -
    Toshiba Semiconductor and Storage GT20J341,S4X(S
    Mfr. Part #
    GT20J341,S4X(S
    Twicea Part #
    4669-372-GT20J341,S4X(S     		Toshiba Semiconductor and Storage
    DISCRETE IGBT TRANSISTOR TO-220S
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    100 In Stock
      Min.:1
      Mult.:1
      		 - - Through Hole TO-220-3 Full Pack NO - TO-220SIS - - - Toshiba 20(A) 600 V 1.5 20 A 80 A 20 A 50 ±25(V) TOSHIBA CORP Toshiba GT20J341,S4X(S - 25 V, + 25 V + 150 C Toshiba Semiconductor and Storage - 55 C Through Hole Through Hole - 150C -55C Military 150 °C Tube - - - - TO-220SIS Active - 45 W Active No 2.3 Details Yes 300V, 20A, 33Ohm, 15V - - - 150°C (TJ) Magazine - EAR99 - - - - IGBTs Si - - unknown 3 +Tab - - Single - 45 - Standard 45 W - N-CHANNEL IGBT Transistors - - 600 V N 45 W 2V @ 15V, 20A 20 A 20 - 600 V - 80 A 60ns/240ns 500μJ (on), 400μJ (off) 25 V - - 90 ns - - IGBT Transistors -
      GT20J341,S4X(S
      GT20J341,S4X(S

      4669-372-GT20J341,S4X(S Toshiba Semiconductor and Storage
      RoHS :
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      In Stock : 100
      1 : -
      Toshiba Semiconductor and Storage GT40RR21(STA1,E
      Mfr. Part #
      GT40RR21(STA1,E
      Twicea Part #
      4669-372-GT40RR21(STA1,E       		Toshiba Semiconductor and Storage
      PB-F IGBT / TRANSISTOR TO-3PN IC
      Datasheet Compare
      48 In Stock
        Min.:1
        Mult.:1
        		 - - Through Hole TO-3P-3, SC-65-3 - - TO-3P(N) - - GT40RR21 Toshiba - 1.35 kV 1.6 V 40 A 200 A 40 A 25 - - Toshiba - - 25 V, + 25 V + 175 C Toshiba Semiconductor and Storage - 55 C - Through Hole - - - - - Tube - - - - - - - 230 W Active - - Details - 280V, 40A, 10Ohm, 20V - - - 175°C (TJ) Tube - - - - - - IGBTs Si - - - - - - Single - - - Standard 230 W - - IGBT Transistors - - 1200 V - - 2.8V @ 15V, 40A - - - - - 200 A - -, 540μJ (off) - - - 600 ns - - IGBT Transistors -
        GT40RR21(STA1,E
        GT40RR21(STA1,E

        4669-372-GT40RR21(STA1,E Toshiba Semiconductor and Storage
        RoHS :
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        In Stock : 48
        1 : -
        Toshiba Semiconductor and Storage GT50JR22(STA1,E,S)
        Mfr. Part #
        GT50JR22(STA1,E,S)
        Twicea Part #
        4669-372-GT50JR22(STA1,E,S)         		Toshiba Semiconductor and Storage
        PB-F IGBT / TRANSISTOR TO-3PN(OS
        Datasheet Compare
        322 In Stock
          Min.:1
          Mult.:1
          		 - Through Hole Through Hole TO-3P-3, SC-65-3 - 3 TO-3P(N) - - - Toshiba - 600 V 1.55 50 A - 50 A 25 - - Toshiba - - 25 V, + 25 V + 175 C Toshiba Semiconductor and Storage - 55 C - Through Hole - - - - - Tube - - - - - - - 230 W Active - - Compliant - - - - 0.162260 oz 175°C (TJ) Tube - - 175 °C -55 °C - - IGBTs Si - - - - - - Single Single 230 - Standard 230 W - - IGBT Transistors 600 V 50 A 600 V - - 2.2V @ 15V, 50A - 50 - - - 100 A - - - - - - - - IGBT Transistors Lead Free
          GT50JR22(STA1,E,S)
          GT50JR22(STA1,E,S)

          4669-372-GT50JR22(STA1,E,S) Toshiba Semiconductor and Storage
          RoHS :
          Package : -
          In Stock : 322
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          Toshiba Semiconductor and Storage GT30J341,Q
          Mfr. Part #
          GT30J341,Q
          Twicea Part #
          4669-372-GT30J341,Q           		Toshiba Semiconductor and Storage
          IGBT TRANS 600V 30A TO3PN
          Datasheet Compare
          43 In Stock
            Min.:1
            Mult.:1
            		 12 Weeks - Through Hole TO-3P-3, SC-65-3 - - TO-3P(N) - - GT30J341 Toshiba - 600 V 1.5 V 59 A 120 A 59 A 100 - TOSHIBA CORP Toshiba GT30J341,Q - 25 V, + 25 V + 175 C Toshiba Semiconductor and Storage - 55 C - Through Hole - - - - - Tray - , - - - Active - 230 W Active - 5.67 Details - 300V, 30A, 24Ohm, 15V - - - 175°C (TJ) Tray - - - - - - IGBTs Si - - unknown - - - Single - - - Standard 230 W - - IGBT Transistors - - 600 V - - 2V @ 15V, 30A - - - - - 120 A 80ns/280ns 800μJ (on), 600μJ (off) - - - 50 ns - - IGBT Transistors -
            GT30J341,Q
            GT30J341,Q

            4669-372-GT30J341,Q Toshiba Semiconductor and Storage
            RoHS :
            Package : -
            In Stock : 43
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            Toshiba Semiconductor and Storage GT40WR21,Q
            Mfr. Part #
            GT40WR21,Q
            Twicea Part #
            4669-372-GT40WR21,Q             		Toshiba Semiconductor and Storage
            DISCRETE IGBT TRANSISTOR TO-3PN(
            Datasheet Compare
            7 In Stock
              Min.:1
              Mult.:1
              		 - - Through Hole TO-3P-3, SC-65-3 - - TO-3P(N) - - - Toshiba - 1.8 kV 2.9 V 40 A 80 A 40 A 100 - - Toshiba - - 25 V, + 25 V + 175 C Toshiba Semiconductor and Storage - 55 C - Through Hole - - - - - Tray - - - - - - - 375 W Active - - Details - - - - - 175°C (TJ) Tray - - - - - - IGBTs Si - - - - - - Single - - - Standard 375 W - - IGBT Transistors - - 1350 V - - 5.9V @ 15V, 40A - - - - - 80 A - - - - - - - - IGBT Transistors -
              GT40WR21,Q
              GT40WR21,Q

              4669-372-GT40WR21,Q Toshiba Semiconductor and Storage
              RoHS :
              Package : -
              In Stock : 7
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              Toshiba Semiconductor and Storage GT50JR21(STA1,E,S)
              Mfr. Part #
              GT50JR21(STA1,E,S)
              Twicea Part #
              4669-372-GT50JR21(STA1,E,S)               		Toshiba Semiconductor and Storage
              PB-F IGBT / TRANSISTOR TO-3PN(OS
              Datasheet Compare
              48 In Stock
                Min.:1
                Mult.:1
                		 - - Through Hole TO-3P-3, SC-65-3 - - TO-3P(N) - - - - - - 1.45 - - 50 A - - - - - - - Toshiba Semiconductor and Storage - - - - - - - - Tube - - - - - - - - Active - - Compliant - - - - - 175°C (TJ) - - - - - - - - - - - - - - - - - 230 - Standard 230 W - - - - - 600 V - - 2V @ 15V, 50A - 50 - - - 100 A - - - - - - - - - -
                GT50JR21(STA1,E,S)
                GT50JR21(STA1,E,S)

                4669-372-GT50JR21(STA1,E,S) Toshiba Semiconductor and Storage
                RoHS :
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                In Stock : 48
                1 : -
                Toshiba America Electronic Components MG360V1US41
                Mfr. Part #
                MG360V1US41
                Twicea Part #
                4669-372-MG360V1US41                 		Toshiba America Electronic Components
                Description: TRANSISTOR 360 A
                Datasheet Compare
                30 In Stock
                  Min.:1
                  Mult.:1
                  		 - - - - NO - - 5 SILICON - - - - - - - - - - TOSHIBA CORP - - - - - - - - 1 - - - 150 °C - UNSPECIFIED FLANGE MOUNT, R-XUFM-X5 RECTANGULAR FLANGE MOUNT - Obsolete - - - - - - No - 1000 ns 500 ns - - - - EAR99 - - HIGH SPEED 8541.29.00.95 - - UPPER UNSPECIFIED unknown 5 R-XUFM-X5 Not Qualified SINGLE WITH BUILT-IN DIODE - - ISOLATED - - MOTOR CONTROL N-CHANNEL - - - - - 3600 W - 360 A - - 1700 V - - - - 20 V 4.5 V 8 V - 3600 W 1500 ns - -
                  MG360V1US41
                  MG360V1US41

                  4669-372-MG360V1US41 Toshiba America Electronic Components
                  RoHS :
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                  In Stock : 30
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                  Toshiba America Electronic Components GT60M105
                  Mfr. Part #
                  GT60M105
                  Twicea Part #
                  4669-372-GT60M105                   		Toshiba America Electronic Components
                  TRANSISTOR 60 A
                  Datasheet Compare
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                    		 - - - - NO - - 3 SILICON - - - - - - - - - - TOSHIBA CORP - - - - - - - - 1 - - - - - PLASTIC/EPOXY - RECTANGULAR FLANGE MOUNT - Obsolete - - - - - - - - 800 ns 500 ns - - - - - - - HIGH SPEED - - - SINGLE THROUGH-HOLE unknown - R-PSFM-T3 Not Qualified SINGLE - - COLLECTOR - - POWER CONTROL N-CHANNEL - - - - - - - 60 A - - 900 V - - - - - - - - - - - -
                    GT60M105
                    GT60M105

                    4669-372-GT60M105 Toshiba America Electronic Components
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                    Toshiba America Electronic Components MP7003
                    Mfr. Part #
                    MP7003
                    Twicea Part #
                    4669-372-MP7003                     		Toshiba America Electronic Components
                    Description: TRANSISTOR 40 A
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                      		 - - - - NO - - 7 SILICON - - - - - - - - - - TOSHIBA CORP - - - - - - - - 1 - - - 125 °C - PLASTIC/EPOXY FLANGE MOUNT, R-PSFM-T7 RECTANGULAR FLANGE MOUNT - Obsolete - - - - - - - - 700 ns 700 ns - - - - EAR99 - - - - - - SINGLE THROUGH-HOLE unknown - R-PSFM-T7 Not Qualified SINGLE WITH BUILT-IN DIODE - - - - - - N-CHANNEL - - - - - 37 W - 40 A - - 600 V - - - - 20 V 2.7 V - - - - - -
                      MP7003
                      MP7003

                      4669-372-MP7003 Toshiba America Electronic Components
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                      Toshiba America Electronic Components MIG10J805H
                      Mfr. Part #
                      MIG10J805H
                      Twicea Part #
                      4669-372-MIG10J805H                       		Toshiba America Electronic Components
                      TRANSISTOR IGBT
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                        		 - - - - NO - - 20 SILICON - - - - - - - - - - TOSHIBA CORP - - - - - - - - 6 - - - - - UNSPECIFIED IN-LINE, R-XDIP-T20 RECTANGULAR IN-LINE - Obsolete MODULE - - - - - - - 500 ns 150 ns - - - - EAR99 - - HIGH SPEED - - - DUAL THROUGH-HOLE unknown 20 R-XDIP-T20 Not Qualified BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE - - ISOLATED - - MOTOR CONTROL N-CHANNEL - - - - - - - 10 A - - 600 V - - - - - - - - - - - -
                        MIG10J805H
                        MIG10J805H

                        4669-372-MIG10J805H Toshiba America Electronic Components
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                        Toshiba America Electronic Components GT50G102
                        Mfr. Part #
                        GT50G102
                        Twicea Part #
                        4669-372-GT50G102                         		Toshiba America Electronic Components
                        Description: TRANSISTOR 50 A
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                          		 - - - - NO - - 3 SILICON - - - - - - - - - - TOSHIBA CORP - - - - - - - - 1 - - - - - PLASTIC/EPOXY 2-16C1C, 3 PIN RECTANGULAR FLANGE MOUNT - Obsolete - - - - - - - - 1800 ns 400 ns - - - - - - - HIGH SPEED SWITCHING - - - SINGLE THROUGH-HOLE unknown 3 R-PSFM-T3 Not Qualified SINGLE - - COLLECTOR - - POWER CONTROL N-CHANNEL - - - - - - - 50 A - - 400 V - - - - - - - - - - - -
                          GT50G102
                          GT50G102

                          4669-372-GT50G102 Toshiba America Electronic Components
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                          Toshiba America Electronic Components GT60M103
                          Mfr. Part #
                          GT60M103
                          Twicea Part #
                          4669-372-GT60M103                           		Toshiba America Electronic Components
                          TRANSISTOR 60 A
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                            Min.:1
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                            		 - - - - - - - - SILICON - - - - - - - - - - TOSHIBA CORP - - - - - - - - 1 - - - - - - - - - - Obsolete - - - - - - - - - - - - - - - - - - - - - - - unknown - - Not Qualified SINGLE - - - - - - N-CHANNEL - - - - - - - 60 A - - 900 V - - - - - - - - - - - -
                            GT60M103
                            GT60M103

                            4669-372-GT60M103 Toshiba America Electronic Components
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                            Toshiba America Electronic Components GT60M101
                            Mfr. Part #
                            GT60M101
                            Twicea Part #
                            4669-372-GT60M101                             		Toshiba America Electronic Components
                            Description: TRANSISTOR 60 A
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                              		 - - - - NO - - 3 SILICON - - - - - - - - - - TOSHIBA CORP - - - - - - - - 1 - - - - - PLASTIC/EPOXY 2-21F1C, 3 PIN RECTANGULAR FLANGE MOUNT - Obsolete - - - - - - - - 1000 ns 400 ns - - - - - - - HIGH SPEED SWITCHING - - - SINGLE THROUGH-HOLE unknown 3 R-PSFM-T3 Not Qualified SINGLE - - COLLECTOR - - POWER CONTROL N-CHANNEL - - - - - - - 60 A - - 900 V - - - - - - - - - - - -
                              GT60M101
                              GT60M101

                              4669-372-GT60M101 Toshiba America Electronic Components
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                              Toshiba America Electronic Components MG15Q2YS9
                              Mfr. Part #
                              MG15Q2YS9
                              Twicea Part #
                              4669-372-MG15Q2YS9                               		Toshiba America Electronic Components
                              TRANSISTOR 15 A
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                                Min.:1
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                                		 - - - - - - - - SILICON - - - - - - - - - - TOSHIBA CORP - - - - - - - - 2 - - - - - - , - - - Obsolete - - - - - - - - - - - - - - EAR99 - - - - - - - - unknown - - Not Qualified SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE - - - - - - N-CHANNEL - - - - - - - 15 A - - 1200 V - - - - - - - - - - - -
                                MG15Q2YS9
                                MG15Q2YS9

                                4669-372-MG15Q2YS9 Toshiba America Electronic Components
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                                Toshiba Semiconductor and Storage GT30N135SRA,S1E
                                Mfr. Part #
                                GT30N135SRA,S1E
                                Twicea Part #
                                4669-372-GT30N135SRA,S1E                                 		Toshiba Semiconductor and Storage
                                D-IGBT TO-247 VCES=1350V IC=30A
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                                71 In Stock
                                  Min.:1
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                                  		 - - Through Hole TO-247-3 - - TO-247 - - - - - 1.35 kV 2.15 V 60 A - 60 A - - - - - - 25 V, 25 V + 175 C Toshiba Semiconductor and Storage - 55 C - Through Hole - - - - - Tube - - - - - - - 348 W Active - - - - 300V, 60A, 39Ohm, 15V - - - 175°C (TJ) - - - - - - - - Si - - - - - - Single - - - Standard 348 W - - - - - 1350 V - - 2.6V @ 15V, 60A - - - - 270 nC 120 A - -, 1.3mJ (off) - - - - - - - -
                                  GT30N135SRA,S1E
                                  GT30N135SRA,S1E

                                  4669-372-GT30N135SRA,S1E Toshiba Semiconductor and Storage
                                  RoHS :
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                                  In Stock : 71
                                  1 : -
                                  Toshiba Semiconductor and Storage GT20N135SRA,S1E
                                  Mfr. Part #
                                  GT20N135SRA,S1E
                                  Twicea Part #
                                  4669-372-GT20N135SRA,S1E                                   		Toshiba Semiconductor and Storage
                                  D-IGBT TO-247 VCES=1350V IC=40A
                                  Datasheet Compare
                                  43 In Stock
                                    Min.:1
                                    Mult.:1
                                    		 - - Through Hole TO-247-3 - - TO-247 - - - Toshiba - 1.35 kV 2.4 V 40 A - 40 A 30 - - Toshiba - - 25 V, + 25 V + 175 C Toshiba Semiconductor and Storage - 55 C - Through Hole - - - - - Tube - - - - - - - 312 W Active - - Details - 300V, 40A, 39Ohm, 15V - - 0.000217 oz 175°C (TJ) Tube - - - - - - IGBTs Si - - - - - - Single - - - Standard 312 W - - IGBT Transistors - - 1350 V - - 2.4V @ 15V, 40A - - - - 185 nC 80 A - -, 700μJ (off) - - - - - - IGBT Transistors -
                                    GT20N135SRA,S1E
                                    GT20N135SRA,S1E

                                    4669-372-GT20N135SRA,S1E Toshiba Semiconductor and Storage
                                    RoHS :
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                                    In Stock : 43
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                                    Toshiba Semiconductor and Storage GT50N322A
                                    Mfr. Part #
                                    GT50N322A
                                    Twicea Part #
                                    4669-372-GT50N322A                                     		Toshiba Semiconductor and Storage
                                    PB-F IGBT / TRANSISTOR TO-3PN IC
                                    Datasheet Compare
                                    7 In Stock
                                      Min.:1
                                      Mult.:1
                                      		 12 Weeks - Through Hole TO-3P-3, SC-65-3 NO - TO-3P(N) 3 SILICON - Toshiba - 1 kV 2.2 V 50 A 120 A 50 A 50 - TOSHIBA CORP Toshiba GT50N322A - 25 V, + 25 V + 150 C Toshiba Semiconductor and Storage - 55 C - Through Hole 1 - - - 150 °C Tube PLASTIC/EPOXY FLANGE MOUNT, R-PSFM-T3 RECTANGULAR FLANGE MOUNT - Active - 156 W Active - 2.12 Details - - 700 ns 330 ns 0.162260 oz 150°C (TJ) Tube - - - - - - IGBTs Si SINGLE THROUGH-HOLE unknown 3 R-PSFM-T3 Not Qualified Single - - COLLECTOR Standard 156 W POWER CONTROL N-CHANNEL IGBT Transistors - - 1000 V - - 2.8V @ 15V, 60A 50 A - - 1000 V - 120 A - - - - - 800 ns - - IGBT Transistors -
                                      GT50N322A
                                      GT50N322A

                                      4669-372-GT50N322A Toshiba Semiconductor and Storage
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                                      In Stock : 7
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                                      Toshiba America Electronic Components MIG12J504L
                                      Mfr. Part #
                                      MIG12J504L
                                      Twicea Part #
                                      4669-372-MIG12J504L                                       		Toshiba America Electronic Components
                                      TRANSISTOR
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                                        		 - - - - - - - - - - - - - - - - - - - TOSHIBA CORP - - - - - - - - 1 - - - 100 °C - - , - - - Obsolete - - - - - - - - - - - - - - EAR99 - - - - - - - - unknown - - - - - - - - - - - - - - - - - - 12 A - - 600 V - - - - - 2.3 V - - - - - -
                                        MIG12J504L
                                        MIG12J504L

                                        4669-372-MIG12J504L Toshiba America Electronic Components
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                                        Toshiba America Electronic Components MG400J1US45
                                        Mfr. Part #
                                        MG400J1US45
                                        Twicea Part #
                                        4669-372-MG400J1US45                                         		Toshiba America Electronic Components
                                        TRANSISTOR 400 A
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                                          		 - - - - NO - - 4 SILICON - - - - - - - - - - TOSHIBA CORP - - - - - - - - 1 - - - - - PLASTIC/EPOXY FLANGE MOUNT, R-PUFM-X4 RECTANGULAR FLANGE MOUNT - Obsolete - - - - - - - - - - - - - - EAR99 - - - - - - UPPER UNSPECIFIED unknown - R-PUFM-X4 Not Qualified SINGLE WITH BUILT-IN DIODE - - - - - POWER CONTROL N-CHANNEL - - - - - - - 400 A - - 600 V - - - - - 2.5 V - - - 1000 ns - -
                                          MG400J1US45
                                          MG400J1US45

                                          4669-372-MG400J1US45 Toshiba America Electronic Components
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                                          Discrete Semiconductor Products

                                          Transistors - IGBTs - Single definition: An IGBT(Insulated-Gate Bipolar Transistor) is a three-terminal power semiconductor device primarily used as an electronic switch. It consist... Transistors - IGBTs - Single Product Listing: GT50J341,Q,GT20J341,S4X(S,GT40RR21(STA1,E,GT50JR22(STA1,E,S),GT30J341,Q.Discrete Semiconductor Products type:Diodes - Zener - Single(126889),Diodes - Rectifiers - Single(107990),Transistors - FETs, MOSFETs - Single(66871),Transistors - Bipolar (BJT) - Single(41289),Diodes - Bridge Rectifiers(23480) .Transistors - IGBTs - Single has 38 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Twicea.