Twicea electronic parts stores,electronic components,electronic parts,electronics parts supply Twicea electronic parts stores,electronic components,electronic parts,electronics parts supply
Image Part # Manufacturer Description Availability Pricing Quantity Factory Lead TimeMountMounting TypePackage / CaseSurface MountNumber of PinsSupplier Device PackageNumber of TerminalsTransistor Element MaterialAutomotiveBase Product NumberBrandCollector Current (DC)Collector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageContinuous Collector Current at 25 CContinuous Collector Current Ic MaxCurrent-Collector (Ic) (Max)ECCN (US)EU RoHSFactory Pack QuantityFactory Pack QuantityGate to Emitter Voltage (Max)Ihs ManufacturerManufacturerManufacturer Part NumberMaximum Collector-Emitter Voltage (V)Maximum Continuous Collector Current (A)Maximum Gate Emitter Leakage Current (uA)Maximum Gate Emitter VoltageMaximum Gate Emitter Voltage (V)Maximum Operating TemperatureMaximum Operating Temperature (°C)Maximum Power Dissipation (mW)MfrMinimum Operating TemperatureMinimum Operating Temperature (°C)MountingMounting StylesNumber of ElementsOperating Temperature (Max.)Operating Temperature (Min.)Operating Temperature ClassificationOperating Temperature-MaxPackagePackage Body MaterialPackage DescriptionPackage HeightPackage LengthPackage ShapePackage StylePackage TypePackage WidthPart Life Cycle CodePart Package CodePCB changedPd - Power DissipationPPAPProduct StatusRad HardenedRisk RankRoHSRohs CodeSupplier PackageTabTest ConditionsTurn-off Time-Nom (toff)Turn-on Time-Nom (ton)Typical Collector Emitter Saturation Voltage (V)Unit WeightOperating TemperaturePackagingSeriesPart StatusECCN CodeMax Operating TemperatureMin Operating TemperatureAdditional FeatureHTS CodeSubcategoryTechnologyTerminal PositionTerminal FormReach Compliance CodePin CountJESD-30 CodeQualification StatusConfigurationElement ConfigurationPower DissipationCase ConnectionInput TypePower - MaxTransistor ApplicationPolarity/Channel TypeProduct TypeCollector Emitter Voltage (VCEO)Max Collector CurrentVoltage - Collector Emitter Breakdown (Max)Channel TypePower Dissipation-Max (Abs)Vce(on) (Max) @ Vge, IcCollector Current-Max (IC)Continuous Collector CurrentIGBT TypeCollector-Emitter Voltage-MaxGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyGate-Emitter Voltage-MaxVCEsat-MaxGate-Emitter Thr Voltage-MaxReverse Recovery Time (trr)Power Dissipation Ambient-MaxFall Time-Max (tf)Product CategoryLead Free
Toshiba Semiconductor and Storage GT50J341,Q
Mfr. Part #
GT50J341,Q
Twicea Part #
4669-372-GT50J341,Q 		Toshiba Semiconductor and Storage
PB-F IGBT / TRANSISTOR TO-3PN IC
Datasheet Compare
20 In Stock
    Min.:1
    Mult.:1
    		 12 Weeks - Through Hole TO-3P-3, SC-65-3 - - TO-3P(N) - - - - Toshiba - 600 V 1.6 V 50 A 100 A 50 A - - 50 - TOSHIBA CORP Toshiba GT50J341,Q - - - - 25 V, + 25 V - + 175 C - - Toshiba Semiconductor and Storage - 55 C - - Through Hole - - - - - Tube - , - - - - - - Active - - 200 W - Active - 5.67 Details - - - - - - - - 175°C (TJ) Tube - - - - - - - IGBTs Si - - unknown - - - Single - - - Standard 200 W - - IGBT Transistors - - 600 V - - 2.2V @ 15V, 50A - - - - - 100 A - - - - - - - - IGBT Transistors -
    GT50J341,Q
    GT50J341,Q

    4669-372-GT50J341,Q Toshiba Semiconductor and Storage
    RoHS :
    Package : -
    In Stock : 20
    1 : -
    Toshiba Semiconductor and Storage GT20J341,S4X(S
    Mfr. Part #
    GT20J341,S4X(S
    Twicea Part #
    4669-372-GT20J341,S4X(S     		Toshiba Semiconductor and Storage
    DISCRETE IGBT TRANSISTOR TO-220S
    Datasheet Compare
    19 In Stock
      Min.:1
      Mult.:1
      		 - - Through Hole TO-220-3 Full Pack NO - TO-220SIS - - - - Toshiba 20(A) 600 V 1.5 20 A 80 A 20 A - - 50 ±25(V) TOSHIBA CORP Toshiba GT20J341,S4X(S - - - - 25 V, + 25 V - + 150 C - - Toshiba Semiconductor and Storage - 55 C - Through Hole Through Hole - 150C -55C Military 150 °C Tube - - - - - - TO-220SIS - Active - - 45 W - Active No 2.3 Details Yes - - 300V, 20A, 33Ohm, 15V - - - - 150°C (TJ) Magazine - - EAR99 - - - - IGBTs Si - - unknown 3 +Tab - - Single - 45 - Standard 45 W - N-CHANNEL IGBT Transistors - - 600 V N 45 W 2V @ 15V, 20A 20 A 20 - 600 V - 80 A 60ns/240ns 500μJ (on), 400μJ (off) 25 V - - 90 ns - - IGBT Transistors -
      GT20J341,S4X(S
      GT20J341,S4X(S

      4669-372-GT20J341,S4X(S Toshiba Semiconductor and Storage
      RoHS :
      Package : -
      In Stock : 19
      1 : -
      Toshiba Semiconductor and Storage GT40RR21(STA1,E
      Mfr. Part #
      GT40RR21(STA1,E
      Twicea Part #
      4669-372-GT40RR21(STA1,E       		Toshiba Semiconductor and Storage
      PB-F IGBT / TRANSISTOR TO-3PN IC
      Datasheet Compare
      38 In Stock
        Min.:1
        Mult.:1
        		 - - Through Hole TO-3P-3, SC-65-3 - - TO-3P(N) - - - GT40RR21 Toshiba - 1.35 kV 1.6 V 40 A 200 A 40 A - - 25 - - Toshiba - - - - - 25 V, + 25 V - + 175 C - - Toshiba Semiconductor and Storage - 55 C - - Through Hole - - - - - Tube - - - - - - - - - - - 230 W - Active - - Details - - - 280V, 40A, 10Ohm, 20V - - - - 175°C (TJ) Tube - - - - - - - IGBTs Si - - - - - - Single - - - Standard 230 W - - IGBT Transistors - - 1200 V - - 2.8V @ 15V, 40A - - - - - 200 A - -, 540μJ (off) - - - 600 ns - - IGBT Transistors -
        GT40RR21(STA1,E
        GT40RR21(STA1,E

        4669-372-GT40RR21(STA1,E Toshiba Semiconductor and Storage
        RoHS :
        Package : -
        In Stock : 38
        1 : -
        Toshiba Semiconductor and Storage GT50JR22(STA1,E,S)
        Mfr. Part #
        GT50JR22(STA1,E,S)
        Twicea Part #
        4669-372-GT50JR22(STA1,E,S)         		Toshiba Semiconductor and Storage
        PB-F IGBT / TRANSISTOR TO-3PN(OS
        Datasheet Compare
        265 In Stock
          Min.:1
          Mult.:1
          		 - Through Hole Through Hole TO-3P-3, SC-65-3 - 3 TO-3P(N) - - - - Toshiba - 600 V 1.55 50 A - 50 A - - 25 - - Toshiba - - - - - 25 V, + 25 V - + 175 C - - Toshiba Semiconductor and Storage - 55 C - - Through Hole - - - - - Tube - - - - - - - - - - - 230 W - Active - - Compliant - - - - - - - 0.162260 oz 175°C (TJ) Tube - - - 175 °C -55 °C - - IGBTs Si - - - - - - Single Single 230 - Standard 230 W - - IGBT Transistors 600 V 50 A 600 V - - 2.2V @ 15V, 50A - 50 - - - 100 A - - - - - - - - IGBT Transistors Lead Free
          GT50JR22(STA1,E,S)
          GT50JR22(STA1,E,S)

          4669-372-GT50JR22(STA1,E,S) Toshiba Semiconductor and Storage
          RoHS :
          Package : -
          In Stock : 265
          1 : -
          Toshiba Semiconductor and Storage GT40WR21,Q
          Mfr. Part #
          GT40WR21,Q
          Twicea Part #
          4669-372-GT40WR21,Q           		Toshiba Semiconductor and Storage
          DISCRETE IGBT TRANSISTOR TO-3PN(
          Datasheet Compare
          85 In Stock
            Min.:1
            Mult.:1
            		 - - Through Hole TO-3P-3, SC-65-3 - - TO-3P(N) - - - - Toshiba - 1.8 kV 2.9 V 40 A 80 A 40 A - - 100 - - Toshiba - - - - - 25 V, + 25 V - + 175 C - - Toshiba Semiconductor and Storage - 55 C - - Through Hole - - - - - Tray - - - - - - - - - - - 375 W - Active - - Details - - - - - - - - 175°C (TJ) Tray - - - - - - - IGBTs Si - - - - - - Single - - - Standard 375 W - - IGBT Transistors - - 1350 V - - 5.9V @ 15V, 40A - - - - - 80 A - - - - - - - - IGBT Transistors -
            GT40WR21,Q
            GT40WR21,Q

            4669-372-GT40WR21,Q Toshiba Semiconductor and Storage
            RoHS :
            Package : -
            In Stock : 85
            1 : -
            Toshiba Semiconductor and Storage GT30J341,Q
            Mfr. Part #
            GT30J341,Q
            Twicea Part #
            4669-372-GT30J341,Q             		Toshiba Semiconductor and Storage
            IGBT TRANS 600V 30A TO3PN
            Datasheet Compare
            47 In Stock
              Min.:1
              Mult.:1
              		 12 Weeks - Through Hole TO-3P-3, SC-65-3 - - TO-3P(N) - - - GT30J341 Toshiba - 600 V 1.5 V 59 A 120 A 59 A - - 100 - TOSHIBA CORP Toshiba GT30J341,Q - - - - 25 V, + 25 V - + 175 C - - Toshiba Semiconductor and Storage - 55 C - - Through Hole - - - - - Tray - , - - - - - - Active - - 230 W - Active - 5.67 Details - - - 300V, 30A, 24Ohm, 15V - - - - 175°C (TJ) Tray - - - - - - - IGBTs Si - - unknown - - - Single - - - Standard 230 W - - IGBT Transistors - - 600 V - - 2V @ 15V, 30A - - - - - 120 A 80ns/280ns 800μJ (on), 600μJ (off) - - - 50 ns - - IGBT Transistors -
              GT30J341,Q
              GT30J341,Q

              4669-372-GT30J341,Q Toshiba Semiconductor and Storage
              RoHS :
              Package : -
              In Stock : 47
              1 : -
              Toshiba Semiconductor and Storage GT50JR21(STA1,E,S)
              Mfr. Part #
              GT50JR21(STA1,E,S)
              Twicea Part #
              4669-372-GT50JR21(STA1,E,S)               		Toshiba Semiconductor and Storage
              PB-F IGBT / TRANSISTOR TO-3PN(OS
              Datasheet Compare
              145 In Stock
                Min.:1
                Mult.:1
                		 - - Through Hole TO-3P-3, SC-65-3 - - TO-3P(N) - - - - - - - 1.45 - - 50 A - - - - - - - - - - - - - - - Toshiba Semiconductor and Storage - - - - - - - - - Tube - - - - - - - - - - - - - Active - - Compliant - - - - - - - - 175°C (TJ) - - - - - - - - - - - - - - - - - - 230 - Standard 230 W - - - - - 600 V - - 2V @ 15V, 50A - 50 - - - 100 A - - - - - - - - - -
                GT50JR21(STA1,E,S)
                GT50JR21(STA1,E,S)

                4669-372-GT50JR21(STA1,E,S) Toshiba Semiconductor and Storage
                RoHS :
                Package : -
                In Stock : 145
                1 : -
                Toshiba Semiconductor and Storage GT30N135SRA,S1E
                Mfr. Part #
                GT30N135SRA,S1E
                Twicea Part #
                4669-372-GT30N135SRA,S1E                 		Toshiba Semiconductor and Storage
                D-IGBT TO-247 VCES=1350V IC=30A
                Datasheet Compare
                4235 In Stock
                  Min.:1
                  Mult.:1
                  		 - - Through Hole TO-247-3 - - TO-247 - - - - - - 1.35 kV 2.15 V 60 A - 60 A - - - - - - - - - - - 25 V, 25 V - + 175 C - - Toshiba Semiconductor and Storage - 55 C - - Through Hole - - - - - Tube - - - - - - - - - - - 348 W - Active - - - - - - 300V, 60A, 39Ohm, 15V - - - - 175°C (TJ) - - - - - - - - - Si - - - - - - Single - - - Standard 348 W - - - - - 1350 V - - 2.6V @ 15V, 60A - - - - 270 nC 120 A - -, 1.3mJ (off) - - - - - - - -
                  GT30N135SRA,S1E
                  GT30N135SRA,S1E

                  4669-372-GT30N135SRA,S1E Toshiba Semiconductor and Storage
                  RoHS :
                  Package : -
                  In Stock : 4235
                  1 : -
                  Toshiba Semiconductor and Storage GT20N135SRA,S1E
                  Mfr. Part #
                  GT20N135SRA,S1E
                  Twicea Part #
                  4669-372-GT20N135SRA,S1E                   		Toshiba Semiconductor and Storage
                  D-IGBT TO-247 VCES=1350V IC=40A
                  Datasheet Compare
                  98 In Stock
                    Min.:1
                    Mult.:1
                    		 - - Through Hole TO-247-3 - - TO-247 - - - - Toshiba - 1.35 kV 2.4 V 40 A - 40 A - - 30 - - Toshiba - - - - - 25 V, + 25 V - + 175 C - - Toshiba Semiconductor and Storage - 55 C - - Through Hole - - - - - Tube - - - - - - - - - - - 312 W - Active - - Details - - - 300V, 40A, 39Ohm, 15V - - - 0.000217 oz 175°C (TJ) Tube - - - - - - - IGBTs Si - - - - - - Single - - - Standard 312 W - - IGBT Transistors - - 1350 V - - 2.4V @ 15V, 40A - - - - 185 nC 80 A - -, 700μJ (off) - - - - - - IGBT Transistors -
                    GT20N135SRA,S1E
                    GT20N135SRA,S1E

                    4669-372-GT20N135SRA,S1E Toshiba Semiconductor and Storage
                    RoHS :
                    Package : -
                    In Stock : 98
                    1 : -
                    Toshiba America Electronic Components GT60M103
                    Mfr. Part #
                    GT60M103
                    Twicea Part #
                    4669-372-GT60M103                     		Toshiba America Electronic Components
                    TRANSISTOR 60 A, 900 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
                    Datasheet Compare
                    110 In Stock
                      Min.:1
                      Mult.:1
                      		 - - - - - - - - SILICON - - - - - - - - - - - - - TOSHIBA CORP - - - - - - - - - - - - - - - 1 - - - - - - - - - - - - - Obsolete - - - - - - - - - - - - - - - - - - - - - - - - - - - - - unknown - - Not Qualified SINGLE - - - - - - N-CHANNEL - - - - - - - 60 A - - 900 V - - - - - - - - - - - -
                      GT60M103
                      GT60M103

                      4669-372-GT60M103 Toshiba America Electronic Components
                      RoHS :
                      Package : -
                      In Stock : 110
                      1 : -
                      Toshiba America Electronic Components MG360V1US41
                      Mfr. Part #
                      MG360V1US41
                      Twicea Part #
                      4669-372-MG360V1US41                       		Toshiba America Electronic Components
                      Description: TRANSISTOR 360 A, 1700 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
                      Datasheet Compare
                      455 In Stock
                        Min.:1
                        Mult.:1
                        		 - - - - NO - - 5 SILICON - - - - - - - - - - - - - TOSHIBA CORP - - - - - - - - - - - - - - - 1 - - - 150 °C - UNSPECIFIED FLANGE MOUNT, R-XUFM-X5 - - RECTANGULAR FLANGE MOUNT - - Obsolete - - - - - - - - No - - - 1000 ns 500 ns - - - - - - EAR99 - - HIGH SPEED 8541.29.00.95 - - UPPER UNSPECIFIED unknown 5 R-XUFM-X5 Not Qualified SINGLE WITH BUILT-IN DIODE - - ISOLATED - - MOTOR CONTROL N-CHANNEL - - - - - 3600 W - 360 A - - 1700 V - - - - 20 V 4.5 V 8 V - 3600 W 1500 ns - -
                        MG360V1US41
                        MG360V1US41

                        4669-372-MG360V1US41 Toshiba America Electronic Components
                        RoHS :
                        Package : -
                        In Stock : 455
                        1 : -
                        Toshiba America Electronic Components GT60M105
                        Mfr. Part #
                        GT60M105
                        Twicea Part #
                        4669-372-GT60M105                         		Toshiba America Electronic Components
                        TRANSISTOR 60 A, 900 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
                        Datasheet Compare
                          Min.:1
                          Mult.:1
                          		 - - - - NO - - 3 SILICON - - - - - - - - - - - - - TOSHIBA CORP - - - - - - - - - - - - - - - 1 - - - - - PLASTIC/EPOXY - - - RECTANGULAR FLANGE MOUNT - - Obsolete - - - - - - - - - - - - 800 ns 500 ns - - - - - - - - - HIGH SPEED - - - SINGLE THROUGH-HOLE unknown - R-PSFM-T3 Not Qualified SINGLE - - COLLECTOR - - POWER CONTROL N-CHANNEL - - - - - - - 60 A - - 900 V - - - - - - - - - - - -
                          GT60M105
                          GT60M105

                          4669-372-GT60M105 Toshiba America Electronic Components
                          RoHS :
                          Package : -
                          In Stock : -
                          1 : -
                          Toshiba America Electronic Components MP7003
                          Mfr. Part #
                          MP7003
                          Twicea Part #
                          4669-372-MP7003                           		Toshiba America Electronic Components
                          Description: TRANSISTOR 40 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
                          Datasheet Compare
                            Min.:1
                            Mult.:1
                            		 - - - - NO - - 7 SILICON - - - - - - - - - - - - - TOSHIBA CORP - - - - - - - - - - - - - - - 1 - - - 125 °C - PLASTIC/EPOXY FLANGE MOUNT, R-PSFM-T7 - - RECTANGULAR FLANGE MOUNT - - Obsolete - - - - - - - - - - - - 700 ns 700 ns - - - - - - EAR99 - - - - - - SINGLE THROUGH-HOLE unknown - R-PSFM-T7 Not Qualified SINGLE WITH BUILT-IN DIODE - - - - - - N-CHANNEL - - - - - 37 W - 40 A - - 600 V - - - - 20 V 2.7 V - - - - - -
                            MP7003
                            MP7003

                            4669-372-MP7003 Toshiba America Electronic Components
                            RoHS :
                            Package : -
                            In Stock : -
                            1 : -
                            Toshiba America Electronic Components GT60M101
                            Mfr. Part #
                            GT60M101
                            Twicea Part #
                            4669-372-GT60M101                             		Toshiba America Electronic Components
                            Description: TRANSISTOR 60 A, 900 V, N-CHANNEL IGBT, 2-21F1C, 3 PIN, Insulated Gate BIP Transistor
                            Datasheet Compare
                              Min.:1
                              Mult.:1
                              		 - - - - NO - - 3 SILICON - - - - - - - - - - - - - TOSHIBA CORP - - - - - - - - - - - - - - - 1 - - - - - PLASTIC/EPOXY 2-21F1C, 3 PIN - - RECTANGULAR FLANGE MOUNT - - Obsolete - - - - - - - - - - - - 1000 ns 400 ns - - - - - - - - - HIGH SPEED SWITCHING - - - SINGLE THROUGH-HOLE unknown 3 R-PSFM-T3 Not Qualified SINGLE - - COLLECTOR - - POWER CONTROL N-CHANNEL - - - - - - - 60 A - - 900 V - - - - - - - - - - - -
                              GT60M101
                              GT60M101

                              4669-372-GT60M101 Toshiba America Electronic Components
                              RoHS :
                              Package : -
                              In Stock : -
                              1 : -
                              Toshiba America Electronic Components GT50G102
                              Mfr. Part #
                              GT50G102
                              Twicea Part #
                              4669-372-GT50G102                               		Toshiba America Electronic Components
                              Description: TRANSISTOR 50 A, 400 V, N-CHANNEL IGBT, 2-16C1C, 3 PIN, Insulated Gate BIP Transistor
                              Datasheet Compare
                                Min.:1
                                Mult.:1
                                		 - - - - NO - - 3 SILICON - - - - - - - - - - - - - TOSHIBA CORP - - - - - - - - - - - - - - - 1 - - - - - PLASTIC/EPOXY 2-16C1C, 3 PIN - - RECTANGULAR FLANGE MOUNT - - Obsolete - - - - - - - - - - - - 1800 ns 400 ns - - - - - - - - - HIGH SPEED SWITCHING - - - SINGLE THROUGH-HOLE unknown 3 R-PSFM-T3 Not Qualified SINGLE - - COLLECTOR - - POWER CONTROL N-CHANNEL - - - - - - - 50 A - - 400 V - - - - - - - - - - - -
                                GT50G102
                                GT50G102

                                4669-372-GT50G102 Toshiba America Electronic Components
                                RoHS :
                                Package : -
                                In Stock : -
                                1 : -
                                Toshiba America Electronic Components MG15Q2YS9
                                Mfr. Part #
                                MG15Q2YS9
                                Twicea Part #
                                4669-372-MG15Q2YS9                                 		Toshiba America Electronic Components
                                TRANSISTOR 15 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
                                Datasheet Compare
                                  Min.:1
                                  Mult.:1
                                  		 - - - - - - - - SILICON - - - - - - - - - - - - - TOSHIBA CORP - - - - - - - - - - - - - - - 2 - - - - - - , - - - - - - Obsolete - - - - - - - - - - - - - - - - - - - - EAR99 - - - - - - - - unknown - - Not Qualified SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE - - - - - - N-CHANNEL - - - - - - - 15 A - - 1200 V - - - - - - - - - - - -
                                  MG15Q2YS9
                                  MG15Q2YS9

                                  4669-372-MG15Q2YS9 Toshiba America Electronic Components
                                  RoHS :
                                  Package : -
                                  In Stock : -
                                  1 : -
                                  Toshiba America Electronic Components MIG10J805H
                                  Mfr. Part #
                                  MIG10J805H
                                  Twicea Part #
                                  4669-372-MIG10J805H                                   		Toshiba America Electronic Components
                                  TRANSISTOR IGBT, MODULE-20, Insulated Gate BIP Transistor
                                  Datasheet Compare
                                    Min.:1
                                    Mult.:1
                                    		 - - - - NO - - 20 SILICON - - - - - - - - - - - - - TOSHIBA CORP - - - - - - - - - - - - - - - 6 - - - - - UNSPECIFIED IN-LINE, R-XDIP-T20 - - RECTANGULAR IN-LINE - - Obsolete MODULE - - - - - - - - - - - 500 ns 150 ns - - - - - - EAR99 - - HIGH SPEED - - - DUAL THROUGH-HOLE unknown 20 R-XDIP-T20 Not Qualified BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE - - ISOLATED - - MOTOR CONTROL N-CHANNEL - - - - - - - 10 A - - 600 V - - - - - - - - - - - -
                                    MIG10J805H
                                    MIG10J805H

                                    4669-372-MIG10J805H Toshiba America Electronic Components
                                    RoHS :
                                    Package : -
                                    In Stock : -
                                    1 : -
                                    Toshiba Semiconductor and Storage GT50N322A
                                    Mfr. Part #
                                    GT50N322A
                                    Twicea Part #
                                    4669-372-GT50N322A                                     		Toshiba Semiconductor and Storage
                                    PB-F IGBT / TRANSISTOR TO-3PN IC
                                    Datasheet Compare
                                    7000 In Stock
                                      Min.:1
                                      Mult.:1
                                      		 12 Weeks - Through Hole TO-3P-3, SC-65-3 NO - TO-3P(N) 3 SILICON - - Toshiba - 1 kV 2.2 V 50 A 120 A 50 A - - 50 - TOSHIBA CORP Toshiba GT50N322A - - - - 25 V, + 25 V - + 150 C - - Toshiba Semiconductor and Storage - 55 C - - Through Hole 1 - - - 150 °C Tube PLASTIC/EPOXY FLANGE MOUNT, R-PSFM-T3 - - RECTANGULAR FLANGE MOUNT - - Active - - 156 W - Active - 2.12 Details - - - - 700 ns 330 ns - 0.162260 oz 150°C (TJ) Tube - - - - - - - IGBTs Si SINGLE THROUGH-HOLE unknown 3 R-PSFM-T3 Not Qualified Single - - COLLECTOR Standard 156 W POWER CONTROL N-CHANNEL IGBT Transistors - - 1000 V - - 2.8V @ 15V, 60A 50 A - - 1000 V - 120 A - - - - - 800 ns - - IGBT Transistors -
                                      GT50N322A
                                      GT50N322A

                                      4669-372-GT50N322A Toshiba Semiconductor and Storage
                                      RoHS :
                                      Package : -
                                      In Stock : 7000
                                      1 : -
                                      Toshiba GT30J122A(STA1，E
                                      Mfr. Part #
                                      GT30J122A(STA1，E
                                      Twicea Part #
                                      4669-372-GT30J122A(STA1，E                                       		Toshiba
                                      IGBT Transistors
                                      Datasheet Compare
                                        Min.:1
                                        Mult.:1
                                        		 - - - - - - - - - - - Toshiba - - - - - - - - - - - Toshiba - - - - - 20 V, + 20 V - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - IGBTs - - - - - - - - - - - - - - - IGBT Transistors - - - - - - - - - - - - - - - - - - - - IGBT Transistors -
                                        GT30J122A(STA1，E
                                        GT30J122A(STA1，E

                                        4669-372-GT30J122A(STA1，E Toshiba
                                        RoHS :
                                        Package : -
                                        In Stock : -
                                        1 : -
                                        Toshiba GT50J342,Q(O
                                        Mfr. Part #
                                        GT50J342,Q(O
                                        Twicea Part #
                                        4669-372-GT50J342,Q(O                                         		Toshiba
                                        -
                                        Datasheet Compare
                                          Min.:1
                                          Mult.:1
                                          		 - - - - - - - - - No - - - - - - - - EAR99 Compliant - - - - - 600 80 0.1 - ±25 - 175 394 - - -55 Through Hole - - - - - - - - - 19 15.5 - - - 4.5 - - 3 - No - - - Compliant - TO-3PN Tab - - - 1.5 - - - - Obsolete - - - - - - - - - - 3 - - Single - - - - - - - - - - - N - - - - - - - - - - - - - - - - - -
                                          GT50J342,Q(O
                                          GT50J342,Q(O

                                          4669-372-GT50J342,Q(O Toshiba
                                          RoHS :
                                          Package : -
                                          In Stock : -
                                          1 : -

                                          Discrete Semiconductor Products

                                          Transistors - IGBTs - Single definition: An IGBT(Insulated-Gate Bipolar Transistor) is a three-terminal power semiconductor device primarily used as an electronic switch. It consist... Transistors - IGBTs - Single Product Listing: GT50J341,Q,GT20J341,S4X(S,GT40RR21(STA1,E,GT50JR22(STA1,E,S),GT40WR21,Q.Discrete Semiconductor Products type:Diodes - Zener - Single(126889),Diodes - Rectifiers - Single(107990),Transistors - FETs, MOSFETs - Single(66871),Transistors - Bipolar (BJT) - Single(41289),Diodes - Bridge Rectifiers(23480) .Transistors - IGBTs - Single has 38 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Twicea.