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GT20N135SRA,S1E Tech Specifications

Toshiba  GT20N135SRA,S1E technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247
Mfr Toshiba Semiconductor and Storage
Package Tube
Product Status Active
Current-Collector (Ic) (Max) 40 A
Test Conditions 300V, 40A, 39Ohm, 15V
Maximum Gate Emitter Voltage - 25 V, + 25 V
Pd - Power Dissipation 312 W
Maximum Operating Temperature + 175 C
Collector-Emitter Saturation Voltage 2.4 V
Unit Weight 0.000217 oz
Minimum Operating Temperature - 55 C
Factory Pack QuantityFactory Pack Quantity 30
Continuous Collector Current at 25 C 40 A
Mounting Styles Through Hole
Manufacturer Toshiba
Brand Toshiba
RoHS Details
Collector- Emitter Voltage VCEO Max 1.35 kV
Series -
Operating Temperature 175°C (TJ)
Packaging Tube
Subcategory IGBTs
Technology Si
Configuration Single
Input Type Standard
Power - Max 312 W
Product Type IGBT Transistors
Voltage - Collector Emitter Breakdown (Max) 1350 V
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 40A
IGBT Type -
Gate Charge 185 nC
Current - Collector Pulsed (Icm) 80 A
Td (on/off) @ 25°C -
Switching Energy -, 700μJ (off)
Product Category IGBT Transistors
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