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| Image | Part # | Manufacturer | Description | Availability | Pricing | Quantity | Surface Mount | Number of Terminals | Transistor Element Material | Exterior Housing Material | Ihs Manufacturer | Number of Elements | Operating Temperature-Max | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Rise Time-Max (tr) | Rohs Code | Turn-off Time-Nom (toff) | Turn-on Time-Nom (ton) | JESD-609 Code | ECCN Code | Terminal Finish | Additional Feature | Terminal Position | Terminal Form | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | JEDEC-95 Code | Power Dissipation-Max (Abs) | Collector Current-Max (IC) | Collector-Emitter Voltage-Max | Gate-Emitter Voltage-Max | VCEsat-Max | Gate-Emitter Thr Voltage-Max | Fall Time-Max (tf) |
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![]() | Mfr. Part #PDMB150E6CTwicea Part #391-372-PDMB150E6C | Nihon Inter Electronics Corporation |
Description: Insulated Gate Bipolar Transistor
Datasheet
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| Min.:1 Mult.:1 | NO | 7 | SILICON | - | NIHON INTER ELECTRONICS CORP | 2 | 150 °C | UNSPECIFIED | FLANGE MOUNT, R-XUFM-X7 | RECTANGULAR | FLANGE MOUNT | Transferred | MODULE | - | - | 350 ns | 250 ns | - | EAR99 | - | - | UPPER | UNSPECIFIED | unknown | 7 | R-XUFM-X7 | Not Qualified | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | - | N-CHANNEL | - | - | 150 A | 600 V | - | - | - | - | ||
| PDMB150E6C | |||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #PHMB400A6Twicea Part #391-372-PHMB400A6 | Nihon Inter Electronics Corporation |
Insulated Gate Bipolar Transistor
Datasheet
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| Min.:1 Mult.:1 | NO | 4 | SILICON | - | NIHON INTER ELECTRONICS CORP | 1 | 150 °C | UNSPECIFIED | FLANGE MOUNT, R-XUFM-X4 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | - | 600 ns | 450 ns | - | EAR99 | - | - | UPPER | UNSPECIFIED | unknown | - | R-XUFM-X4 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ISOLATED | - | N-CHANNEL | - | 1470 W | 400 A | 600 V | 20 V | 2.6 V | - | - | ||
| PHMB400A6 | |||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #PDMB400B12Twicea Part #391-372-PDMB400B12 | Nihon Inter Electronics Corporation |
Description: Insulated Gate Bipolar Transistor
Datasheet
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| Min.:1 Mult.:1 | NO | 7 | SILICON | - | NIHON INTER ELECTRONICS CORP | 2 | 150 °C | UNSPECIFIED | FLANGE MOUNT, R-XUFM-X7 | RECTANGULAR | FLANGE MOUNT | Transferred | - | - | - | 800 ns | 400 ns | - | EAR99 | - | - | UPPER | UNSPECIFIED | unknown | - | R-XUFM-X7 | Not Qualified | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | - | N-CHANNEL | - | 1900 W | 400 A | 1200 V | 20 V | 2.4 V | - | - | ||
| PDMB400B12 | |||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #PTMB100A6Twicea Part #391-372-PTMB100A6 | Nihon Inter Electronics Corporation |
Insulated Gate Bipolar Transistor
Datasheet
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| Min.:1 Mult.:1 | NO | 19 | SILICON | - | NIHON INTER ELECTRONICS CORP | 6 | 150 °C | UNSPECIFIED | FLANGE MOUNT, R-XUFM-X19 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | - | 450 ns | 250 ns | - | EAR99 | - | - | UPPER | UNSPECIFIED | unknown | 19 | R-XUFM-X19 | Not Qualified | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | - | N-CHANNEL | - | 400 W | 100 A | 600 V | 20 V | 2.6 V | - | - | ||
| PTMB100A6 | |||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #PDMB100C12CTwicea Part #391-372-PDMB100C12C | Nihon Inter Electronics Corporation |
Insulated Gate Bipolar Transistor
Datasheet
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| Min.:1 Mult.:1 | NO | 7 | SILICON | - | NIHON INTER ELECTRONICS CORP | 2 | - | UNSPECIFIED | FLANGE MOUNT, R-XUFM-X7 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | - | 700 ns | 350 ns | - | EAR99 | - | - | UPPER | UNSPECIFIED | unknown | - | R-XUFM-X7 | Not Qualified | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | - | N-CHANNEL | - | - | 100 A | 1200 V | - | - | - | - | ||
| PDMB100C12C | |||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #PBMB150B12Twicea Part #391-372-PBMB150B12 | Nihon Inter Electronics Corporation |
Insulated Gate Bipolar Transistor
Datasheet
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| Min.:1 Mult.:1 | NO | 8 | SILICON | - | NIHON INTER ELECTRONICS CORP | 4 | 150 °C | UNSPECIFIED | FLANGE MOUNT, R-XUFM-X8 | RECTANGULAR | FLANGE MOUNT | Transferred | MODULE | - | - | 800 ns | 400 ns | - | EAR99 | - | - | UPPER | UNSPECIFIED | unknown | 14 | R-XUFM-X8 | Not Qualified | BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | - | N-CHANNEL | - | 730 W | 150 A | 1200 V | 20 V | 2.4 V | - | - | ||
| PBMB150B12 | |||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #PRHMB100A6Twicea Part #391-372-PRHMB100A6 | Nihon Inter Electronics Corporation |
Insulated Gate Bipolar Transistor
Datasheet
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| Min.:1 Mult.:1 | NO | 5 | SILICON | - | NIHON INTER ELECTRONICS CORP | 1 | 150 °C | UNSPECIFIED | FLANGE MOUNT, R-XUFM-X5 | RECTANGULAR | FLANGE MOUNT | Obsolete | MODULE | - | - | 450 ns | 250 ns | - | EAR99 | - | - | UPPER | UNSPECIFIED | unknown | 5 | R-XUFM-X5 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ISOLATED | POWER CONTROL | N-CHANNEL | - | 400 W | 100 A | 600 V | 20 V | 2.6 V | - | - | ||
| PRHMB100A6 | |||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #PHMB600B12Twicea Part #391-372-PHMB600B12 | Nihon Inter Electronics Corporation |
Insulated Gate Bipolar Transistor
Datasheet
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| Min.:1 Mult.:1 | NO | 4 | SILICON | - | NIHON INTER ELECTRONICS CORP | 1 | 150 °C | UNSPECIFIED | FLANGE MOUNT, R-XUFM-X4 | RECTANGULAR | FLANGE MOUNT | Transferred | MODULE | - | - | 800 ns | 400 ns | - | EAR99 | - | - | UPPER | UNSPECIFIED | unknown | 4 | R-XUFM-X4 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ISOLATED | - | N-CHANNEL | - | 2770 W | 600 A | 1200 V | 20 V | 2.4 V | - | - | ||
| PHMB600B12 | |||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #HGTG10N120BNDTwicea Part #391-372-HGTG10N120BND | Intersil Corporation |
Description: 35A
Datasheet
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| Min.:1 Mult.:1 | NO | 3 | SILICON | 1 | INTERSIL CORP | - | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Transferred | - | 15 ns | No | 330 ns | 32 ns | e0 | EAR99 | Tin/Lead (Sn/Pb) | LOW CONDUCTION LOSS | SINGLE | THROUGH-HOLE | not_compliant | - | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | - | MOTOR CONTROL | N-CHANNEL | TO-247 | 298 W | 35 A | 1200 V | 20 V | - | - | 200 ns | ||
| HGTG10N120BND | |||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #HGTP7N60A4DTwicea Part #391-372-HGTP7N60A4D | Intersil Corporation |
34A
Datasheet
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| Min.:1 Mult.:1 | NO | 3 | SILICON | 1 | INTERSIL CORP | - | 150 °C | PLASTIC/EPOXY | - | RECTANGULAR | FLANGE MOUNT | Transferred | - | - | No | 205 ns | 17 ns | e0 | EAR99 | Tin/Lead (Sn/Pb) | LOW CONDUCTION LOSS | SINGLE | THROUGH-HOLE | not_compliant | - | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | COLLECTOR | MOTOR CONTROL | N-CHANNEL | TO-220AB | 125 W | 34 A | 600 V | 20 V | - | 7 V | 85 ns | ||
| HGTP7N60A4D | |||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #PBMB50B12CTwicea Part #391-372-PBMB50B12C | Nihon Inter Electronics Corporation |
Insulated Gate Bipolar Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | NO | 12 | SILICON | - | NIHON INTER ELECTRONICS CORP | 4 | 150 °C | UNSPECIFIED | FLANGE MOUNT, R-XUFM-X12 | RECTANGULAR | FLANGE MOUNT | Transferred | MODULE | - | - | 800 ns | 400 ns | - | EAR99 | - | - | UPPER | UNSPECIFIED | unknown | 12 | R-XUFM-X12 | Not Qualified | BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | - | N-CHANNEL | - | 250 W | 50 A | 1200 V | 20 V | 2.4 V | - | - | ||
| PBMB50B12C | |||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #PDMB75A6Twicea Part #391-372-PDMB75A6 | Nihon Inter Electronics Corporation |
Insulated Gate Bipolar Transistor
Datasheet
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| Min.:1 Mult.:1 | NO | 7 | SILICON | - | NIHON INTER ELECTRONICS CORP | 2 | 150 °C | UNSPECIFIED | FLANGE MOUNT, R-XUFM-X7 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | - | 450 ns | 250 ns | - | EAR99 | - | - | UPPER | UNSPECIFIED | unknown | - | R-XUFM-X7 | Not Qualified | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | - | N-CHANNEL | - | 320 W | 75 A | 600 V | 20 V | 2.5 V | - | - | ||
| PDMB75A6 | |||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #PBMB150A6Twicea Part #391-372-PBMB150A6 | Nihon Inter Electronics Corporation |
Description: Insulated Gate Bipolar Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | NO | 12 | SILICON | - | NIHON INTER ELECTRONICS CORP | 4 | 150 °C | UNSPECIFIED | FLANGE MOUNT, R-XUFM-X12 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | - | 450 ns | 250 ns | - | EAR99 | - | - | UPPER | UNSPECIFIED | unknown | - | R-XUFM-X12 | Not Qualified | BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | - | N-CHANNEL | - | 560 W | 150 A | 600 V | 20 V | 2.6 V | - | - | ||
| PBMB150A6 | |||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #PCHMB50B12Twicea Part #391-372-PCHMB50B12 | Nihon Inter Electronics Corporation |
Description: Insulated Gate Bipolar Transistor
Datasheet
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| Min.:1 Mult.:1 | NO | 5 | SILICON | - | NIHON INTER ELECTRONICS CORP | 1 | 150 °C | UNSPECIFIED | FLANGE MOUNT, R-XUFM-X5 | RECTANGULAR | FLANGE MOUNT | Transferred | - | - | - | 800 ns | 400 ns | - | EAR99 | - | - | UPPER | UNSPECIFIED | unknown | - | R-XUFM-X5 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ISOLATED | POWER CONTROL | N-CHANNEL | - | 250 W | 50 A | 1200 V | 20 V | 2.4 V | - | - | ||
| PCHMB50B12 | |||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #PHMB600C12Twicea Part #391-372-PHMB600C12 | Nihon Inter Electronics Corporation |
Insulated Gate Bipolar Transistor
Datasheet
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| Min.:1 Mult.:1 | NO | 4 | SILICON | - | NIHON INTER ELECTRONICS CORP | 1 | - | UNSPECIFIED | FLANGE MOUNT, R-XUFM-X4 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | - | 700 ns | 350 ns | - | EAR99 | - | - | UPPER | UNSPECIFIED | unknown | - | R-XUFM-X4 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ISOLATED | - | N-CHANNEL | - | - | 600 A | 1200 V | - | - | - | - | ||
| PHMB600C12 | |||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #PDMB600E6CTwicea Part #391-372-PDMB600E6C | Nihon Inter Electronics Corporation |
Insulated Gate Bipolar Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | NO | 7 | SILICON | - | NIHON INTER ELECTRONICS CORP | 2 | 150 °C | UNSPECIFIED | FLANGE MOUNT, R-XUFM-X7 | RECTANGULAR | FLANGE MOUNT | Transferred | MODULE | - | - | 400 ns | 300 ns | - | EAR99 | - | - | UPPER | UNSPECIFIED | unknown | 7 | R-XUFM-X7 | Not Qualified | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | - | N-CHANNEL | - | - | 600 A | 600 V | - | - | - | - | ||
| PDMB600E6C | |||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #PCHMB50A6Twicea Part #391-372-PCHMB50A6 | Nihon Inter Electronics Corporation |
Description: Insulated Gate Bipolar Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | NO | 5 | SILICON | - | NIHON INTER ELECTRONICS CORP | 1 | 150 °C | UNSPECIFIED | FLANGE MOUNT, R-XUFM-X5 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | - | 450 ns | 250 ns | - | EAR99 | - | - | UPPER | UNSPECIFIED | unknown | - | R-XUFM-X5 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ISOLATED | POWER CONTROL | N-CHANNEL | - | 250 W | 50 A | 600 V | 20 V | 2.5 V | - | - | ||
| PCHMB50A6 | |||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #PDMB50B12Twicea Part #391-372-PDMB50B12 | Nihon Inter Electronics Corporation |
Insulated Gate Bipolar Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | NO | 7 | SILICON | - | NIHON INTER ELECTRONICS CORP | 2 | 150 °C | UNSPECIFIED | FLANGE MOUNT, R-XUFM-X7 | RECTANGULAR | FLANGE MOUNT | Transferred | MODULE | - | - | 800 ns | 400 ns | - | EAR99 | - | - | UPPER | UNSPECIFIED | unknown | 7 | R-XUFM-X7 | Not Qualified | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | - | N-CHANNEL | - | 250 W | 50 A | 1200 V | 20 V | 2.4 V | - | - | ||
| PDMB50B12 | |||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #PHMB1200B12Twicea Part #391-372-PHMB1200B12 | Nihon Inter Electronics Corporation |
Insulated Gate Bipolar Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | NO | 4 | SILICON | - | NIHON INTER ELECTRONICS CORP | 1 | - | UNSPECIFIED | FLANGE MOUNT, S-XUFM-X4 | SQUARE | FLANGE MOUNT | Obsolete | MODULE | - | - | 1000 ns | 400 ns | - | EAR99 | - | - | UPPER | UNSPECIFIED | unknown | 4 | S-XUFM-X4 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ISOLATED | - | N-CHANNEL | - | - | 1200 A | 1200 V | - | - | - | - | ||
| PHMB1200B12 | |||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #PTMB50T6Twicea Part #391-372-PTMB50T6 | Nihon Inter Electronics Corporation |
Insulated Gate Bipolar Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | NO | 17 | - | - | NIHON INTER ELECTRONICS CORP | - | - | UNSPECIFIED | FLANGE MOUNT, R-XUFM-X17 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | - | - | - | - | EAR99 | - | - | UPPER | UNSPECIFIED | unknown | - | R-XUFM-X17 | Not Qualified | - | - | - | - | - | - | - | - | - | - | - | - | ||
| PTMB50T6 |
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