Nihon Inter Electronics Corporation PDMB50B12 Single IGBTs
PDMB50B12
1244-372-PDMB50B12
RoHS Compliant
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
In Stock Min. : 1
Mult. : 1
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PDMB50B12 Tech Specifications
Intersil PDMB50B12 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Surface Mount | NO | |
| Number of Terminals | 7Terminals | |
| Transistor Element Material | SILICON | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | NIHON INTER ELECTRONICS CORP | |
| Part Package Code | MODULE | |
| Package Description | FLANGE MOUNT, R-XUFM-X7 | |
| Number of Elements | 2 Elements | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Turn-off Time-Nom (toff) | 800 ns | |
| Turn-on Time-Nom (ton) | 400 ns | |
| ECCN Code | EAR99 | |
| Terminal Position | UPPER | |
| Terminal Form | UNSPECIFIED | |
| Reach Compliance Code | unknown | |
| Pin Count | 7 | |
| JESD-30 Code | R-XUFM-X7 | |
| Qualification Status | Not Qualified | |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
| Case Connection | ISOLATED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 250 W | |
| Collector Current-Max (IC) | 50 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| VCEsat-Max | 2.4 V |
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