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| Image | Part # | Manufacturer | Description | Availability | Pricing | Quantity | Mount | Mounting Type | Package / Case | Surface Mount | Number of Pins | Supplier Device Package | Number of Terminals | Transistor Element Material | Base Product Number | Brand | Channel Mode | Continuous Drain Current | Drain Current-Max (ID) | Drain Efficiency (Typ) | Drain Source Voltage (Max) | Factory Pack QuantityFactory Pack Quantity | Forward Transconductance - Min | Frequency(Max) | Id - Continuous Drain Current | Ihs Manufacturer | Input Capacitance (Typ)@Vds | Manufacturer | Manufacturer Part Number | Maximum Operating Temperature | Minimum Operating Temperature | Mounting | Mounting Styles | Number of Elements | Operating Temp Range | Operating Temperature-Max | Output Power (Max) | Package Body Material | Package Description | Package Shape | Package Style | Package Type | Part Life Cycle Code | Pd - Power Dissipation | Power Dissipation (Max) | Power Gain (Typ)@Vds | Rad Hardened | Rds On - Drain-Source Resistance | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Transistor Polarity | Unit Weight | Usage Level | Vds - Drain-Source Breakdown Voltage | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Packaging | Series | Pbfree Code | Part Status | ECCN Code | Type | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Subcategory | Max Power Dissipation | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Frequency | Pin Count | JESD-30 Code | Qualification Status | Operating Frequency | Configuration | Number of Channels | ELV | Operating Mode | Case Connection | Output Power | Current - Test | Transistor Application | Polarity/Channel Type | Product Type | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Gain | Forward Current-Max | Max Frequency | Drain Current-Max (Abs) (ID) | Screening Level | DS Breakdown Voltage-Min | Channel Type | Power - Output | FET Technology | Power Dissipation-Max (Abs) | Voltage - Test | Feedback Cap-Max (Crss) | Highest Frequency Band | Power Dissipation Ambient-Max | Frequency (Min) | Power Gain-Min (Gp) | Product Category | Radiation Hardening | Lead Free |
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  | Mfr. Part #DU2805STwicea Part #482-369-DU2805S | MA-COM |
RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,
Datasheet
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| 20
In Stock
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | MACOM | - | - | - | - | - | 20 | - | - | - | - | - | MACOM | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Details | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | MOSFETs | - | Si | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | RF MOSFET Transistors | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | RF MOSFET Transistors | - | - | |
| DU2805S | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #LF2805ATwicea Part #482-369-LF2805A | MA-COM |
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Datasheet
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| 47
In Stock
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | MACOM | Enhancement | - | - | 50(Min) % | 65 V | 20 | - | 1000 MHz | - | - | - | MACOM | - | - | - | Screw | - | 1 | -65C to 200C | - | - | - | - | - | - | - | - | - | - | 10(Min) dB | No | - | - | - | Details | - | - | - | Military grade | - | - | - | - | - | - | - | - | - | - | - | - | - | MOSFETs | - | Si | - | - | - | - | - | 3 | - | - | - | - | - | - | - | - | - | - | - | - | RF MOSFET Transistors | - | - | - | - | - | - | Military | - | N | - | - | - | - | - | - | - | 500 MHz | - | RF MOSFET Transistors | - | - | |
| LF2805A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #MRF-141Twicea Part #482-369-MRF-141 | MACOM |
Trans RF MOSFET N-CH 65V 16A 4-Pin Case 211-11
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| 5000
In Stock
| Min.:1 Mult.:1 | Screw | - | - | - | 4 | - | - | - | - | MACOM | Enhancement | 16(A) | - | 45(%) | 65(V) | 20 | - | 175(MHz) | - | - | 350@28V(pF) | MACOM | - | - | - | Screw | - | 1 | -65C to 200C | - | - | - | - | - | - | CASE 211-11 | - | - | 300000(mW) | 23(dB) | No | - | - | - | Compliant | - | - | - | Military grade | - | - | - | - | - | - | - | - | - | 200 °C | -65 °C | - | - | MOSFETs | 300 W | Si | - | - | - | - | - | 4 | - | - | - | - | - | - | - | - | - | - | - | - | RF MOSFET Transistors | 16 A | 40 V | - | - | 175 MHz | - | Military | - | N | - | - | - | - | - | - | - | - | - | RF MOSFET Transistors | No | Lead Free | |
| MRF-141 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #PTFC260202FC-V1Twicea Part #482-369-PTFC260202FC-V1 | MACOM Technology Solutions |
RF MOSFET LDMOS 28V H-37248-4
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| Min.:1 Mult.:1 | - | Chassis Mount | H-37248-4 | - | - | H-37248-4 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Tray | - | - | Discontinued at Digi-Key | - | - | - | - | - | - | - | - | - | - | - | - | - | 2.69GHz | - | - | - | - | Dual | - | - | - | - | - | 170 mA | - | - | - | - | - | 20dB | 65 V | - | - | - | - | - | 5W | - | - | 28 V | - | - | - | - | - | - | - | - | ||
| PTFC260202FC-V1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #CGHV60170D-GP4Twicea Part #482-369-CGHV60170D-GP4 | MACOM Technology Solutions |
RF MOSFET HEMT 50V DIE
Datasheet
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| 2508
In Stock
| Min.:1 Mult.:1 | - | - | Die | - | - | Die | - | - | CGHV60170 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Tray | GaN | - | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | 6GHz | - | - | - | - | - | - | - | - | - | - | 260 mA | - | - | - | - | - | 17dB | 150 V | - | - | - | - | - | 170W | - | - | 50 V | - | - | - | - | - | - | - | - | |
| CGHV60170D-GP4 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #PTFB213004F-V2-R0Twicea Part #482-369-PTFB213004F-V2-R0 | MACOM Technology Solutions |
RF MOSFET LDMOS 30V H-37275-6
Datasheet
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| Min.:1 Mult.:1 | - | Surface Mount | H-37275-6/2 | - | - | H-37275-6/2 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Strip | - | - | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | 2.17GHz | - | - | - | - | - | - | - | - | - | - | 2.4 A | - | - | - | - | - | 18dB | 65 V | - | - | - | - | - | 60W | - | - | 30 V | - | - | - | - | - | - | - | - | ||
| PTFB213004F-V2-R0 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #PTFB182557SH-V1-R250Twicea Part #482-369-PTFB182557SH-V1-R250 | MACOM Technology Solutions |
RF MOSFET LDMOS
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | PTFB182557 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Tape & Reel (TR) | * | - | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| PTFB182557SH-V1-R250 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #CG2H40010PTwicea Part #482-369-CG2H40010P | MACOM Technology Solutions |
RF MOSFET HEMT 28V 440196
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| 25
In Stock
| Min.:1 Mult.:1 | - | Surface Mount | 440196 | - | - | 440196 | - | - | CG2H40010 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Tray | GaN | - | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | 8GHz | - | - | - | - | - | - | - | - | - | - | 200 mA | - | - | - | - | - | 16.7dB | 120 V | - | - | - | - | - | 10W | - | - | 28 V | - | - | - | - | - | - | - | - | |
| CG2H40010P | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #UF28100VTwicea Part #482-369-UF28100V | MA-COM |
RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-8
Datasheet
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| 2436
In Stock
| Min.:1 Mult.:1 | - | - | 744A-01 | YES | - | - | 8 | SILICON | - | MACOM | - | - | 12 A | - | - | 10 | 1.5 S | - | 12 A | M/A-COM TECHNOLOGY SOLUTIONS INC | - | MACOM | UF28100V | + 150 C | - 55 C | - | SMD/SMT | 2 | - | 200 °C | - | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F8 | RECTANGULAR | FLANGE MOUNT | - | Active | 250 W | - | - | - | - | NOT SPECIFIED | 5.2 | Details | Yes | N-Channel | - | - | 65 V | 20 V | 6 V | Tray | - | Yes | - | EAR99 | RF Power MOSFET | - | - | LOW NOISE | - | MOSFETs | - | Si | DUAL | FLAT | NOT SPECIFIED | compliant | - | 8 | R-CDFM-F8 | Not Qualified | 100 MHz to 500 MHz | Dual | - | - | ENHANCEMENT MODE | - | 100 W | - | AMPLIFIER | N-CHANNEL | RF MOSFET Transistors | - | - | 10 dB | - | - | 12 A | - | 65 V | - | - | METAL-OXIDE SEMICONDUCTOR | 250 W | - | - | ULTRA HIGH FREQUENCY BAND | - | - | - | RF MOSFET Transistors | - | - | |
| UF28100V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #DU2880UTwicea Part #482-369-DU2880U | MA-COM |
RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,
Datasheet
Compare
| 320
In Stock
| Min.:1 Mult.:1 | - | - | - | NO | - | - | 4 | SILICON | - | - | - | - | 16 A | - | - | - | - | - | - | M/A-COM TECHNOLOGY SOLUTIONS INC | - | MACOM | DU2880U | - | - | - | - | 1 | - | 200 °C | - | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, O-CRFM-F4 | ROUND | FLANGE MOUNT | - | Active | - | - | - | - | - | NOT SPECIFIED | 5.22 | - | Yes | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | FET General Purpose Power | - | - | RADIAL | FLAT | NOT SPECIFIED | compliant | - | - | O-CRFM-F4 | Not Qualified | - | SINGLE | - | - | ENHANCEMENT MODE | - | - | - | AMPLIFIER | N-CHANNEL | - | - | - | - | - | - | 16 A | - | 65 V | - | - | METAL-OXIDE SEMICONDUCTOR | 207 W | - | - | VERY HIGH FREQUENCY BAND | - | - | - | - | - | - | |
| DU2880U | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #FH2164Twicea Part #482-369-FH2164 | MA-COM |
-
Datasheet
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| 2689
In Stock
| Min.:1 Mult.:1 | Screw | - | - | - | 5 | - | - | - | - | MACOM | - | - | - | - | - | 20 | - | - | 4 A | M/A-COM TECHNOLOGY SOLUTIONS INC | - | MACOM | FH2164 | + 200 C | - | - | Flange Mount | - | - | - | - | - | FLANGE MOUNT, S-CDFM-F4 | - | - | - | Obsolete | - | - | - | - | - | - | 7.86 | Compliant | Yes | N-Channel | 0.571517 oz | - | 65 V | - | - | Bulk | - | - | - | EAR99 | RF Power MOSFET | 200 °C | -55 °C | - | - | MOSFETs | - | Si | - | - | - | compliant | - | - | - | - | 30 MHz to 90 MHz | - | - | Compliant | - | - | 8 W | - | - | - | RF MOSFET Transistors | 4 A | 20 V | 13 dB | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | RF MOSFET Transistors | - | - | |
| FH2164 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #DU2880VTwicea Part #482-369-DU2880V | MA-COM |
RF Power Field-Effect Transistor, 2-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,
Datasheet
Compare
| 468
In Stock
| Min.:1 Mult.:1 | Screw | - | - | YES | 6 | - | 8 | SILICON | - | - | - | - | 8 A | - | - | - | - | - | - | M/A-COM TECHNOLOGY SOLUTIONS INC | - | MACOM | DU2880V | - | - | - | - | 2 | - | 200 °C | - | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F8 | RECTANGULAR | FLANGE MOUNT | - | Active | - | - | - | - | - | NOT SPECIFIED | 5.23 | Compliant | Yes | - | - | - | - | - | - | Bulk | - | - | - | EAR99 | - | 200 °C | -55 °C | - | - | FET General Purpose Power | - | - | DUAL | FLAT | NOT SPECIFIED | compliant | - | - | R-CDFM-F8 | Not Qualified | - | COMMON SOURCE, 2 ELEMENTS | - | - | ENHANCEMENT MODE | - | - | - | AMPLIFIER | N-CHANNEL | - | 8 A | 20 V | - | - | - | 8 A | - | 65 V | - | - | METAL-OXIDE SEMICONDUCTOR | 159 W | - | - | VERY HIGH FREQUENCY BAND | - | - | - | - | - | - | |
| DU2880V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #UF2820RTwicea Part #482-369-UF2820R | MA-COM |
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,
Datasheet
Compare
| Min.:1 Mult.:1 | Screw | - | - | YES | 6 | - | 6 | SILICON | - | - | - | - | 4 A | - | - | - | - | - | - | M/A-COM TECHNOLOGY SOLUTIONS INC | - | MACOM | UF2820R | - | - | - | - | 1 | - | 200 °C | - | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, O-CXFM-F6 | ROUND | FLANGE MOUNT | - | Active | - | - | - | - | - | - | 5.24 | Compliant | Yes | - | - | - | - | - | - | Bulk | - | - | - | EAR99 | - | 200 °C | -55 °C | - | - | FET General Purpose Power | - | - | UNSPECIFIED | FLAT | - | compliant | - | - | O-CXFM-F6 | Not Qualified | - | SINGLE | - | - | ENHANCEMENT MODE | - | - | - | AMPLIFIER | N-CHANNEL | - | 4 A | 20 V | - | - | - | 4 A | - | 65 V | - | - | METAL-OXIDE SEMICONDUCTOR | 63 W | - | - | ULTRA HIGH FREQUENCY BAND | - | - | - | - | - | - | ||
| UF2820R | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #UF2810PTwicea Part #482-369-UF2810P | MA-COM |
RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-4
Datasheet
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| 146
In Stock
| Min.:1 Mult.:1 | - | - | - | YES | - | - | 4 | SILICON | - | - | - | - | 1.4 A | - | - | - | - | - | - | M/A-COM TECHNOLOGY SOLUTIONS INC | - | MACOM | UF2810P | - | - | - | - | 2 | - | 200 °C | - | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F4 | RECTANGULAR | FLANGE MOUNT | - | Active | - | - | - | - | - | NOT SPECIFIED | 5.3 | - | Yes | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | LOW NOISE | - | FET General Purpose Power | - | - | DUAL | FLAT | NOT SPECIFIED | compliant | - | 4 | R-CDFM-F4 | Not Qualified | - | COMMON SOURCE, 2 ELEMENTS | - | - | ENHANCEMENT MODE | SOURCE | - | - | AMPLIFIER | N-CHANNEL | - | - | - | - | - | - | 1.4 A | - | 65 V | - | - | METAL-OXIDE SEMICONDUCTOR | 26.9 W | - | - | ULTRA HIGH FREQUENCY BAND | - | - | - | - | - | - | |
| UF2810P | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #LF2802ATwicea Part #482-369-LF2802A | MA-COM |
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,
Datasheet
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| 2824
In Stock
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | M/A-COM TECHNOLOGY SOLUTIONS INC | - | MACOM | LF2802A | - | - | - | - | - | - | - | - | - | FLANGE MOUNT, R-CDFM-F2 | - | - | - | Obsolete | - | - | - | - | - | - | 5.35 | - | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | - | - | - | - | - | compliant | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
| LF2802A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #DU28120VTwicea Part #482-369-DU28120V | MA-COM |
-
Datasheet
Compare
| 2615
In Stock
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | MACOM | - | - | - | - | - | 1 | 3 S | - | 6 mA | - | - | MACOM | - | - | - | - | SMD/SMT | - | - | - | - | - | - | - | - | - | - | 250 W | - | - | - | - | - | - | Details | - | N-Channel | 0.544712 oz | - | 65 V | - | 6 V | - | - | - | - | - | RF Power MOSFET | - | - | - | - | MOSFETs | - | Si | - | - | - | - | - | - | - | - | 2 MHz to 175 MHz | - | 1 Channel | - | - | - | 120 W | - | - | - | RF MOSFET Transistors | - | - | 13 dB | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | RF MOSFET Transistors | - | - | |
| DU28120V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #DU2860UTwicea Part #482-369-DU2860U | MA-COM |
RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,
Datasheet
Compare
| 2270
In Stock
| Min.:1 Mult.:1 | Screw | - | - | NO | 4 | - | 4 | SILICON | - | MACOM | - | - | 12 A | - | - | 20 | - | - | 12 A | M/A-COM TECHNOLOGY SOLUTIONS INC | - | MACOM | DU2860U | + 200 C | - | - | Flange Mount | 1 | - | 200 °C | - | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, O-CRFM-F4 | ROUND | FLANGE MOUNT | - | Active | - | - | - | - | - | NOT SPECIFIED | 4.71 | Details | Yes | N-Channel | 0.892167 oz | - | 65 V | - | - | Bulk | - | - | - | EAR99 | - | 200 °C | -55 °C | - | - | MOSFETs | - | Si | RADIAL | FLAT | NOT SPECIFIED | compliant | - | - | O-CRFM-F4 | Not Qualified | 175 MHz | SINGLE | - | - | ENHANCEMENT MODE | - | 60 W | - | AMPLIFIER | N-CHANNEL | RF MOSFET Transistors | 12 A | 20 V | 13 dB | - | - | 12 A | - | 65 V | - | - | METAL-OXIDE SEMICONDUCTOR | 159 W | - | - | VERY HIGH FREQUENCY BAND | - | - | - | RF MOSFET Transistors | - | - | |
| DU2860U | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #DU2860TTwicea Part #482-369-DU2860T | MA-COM |
RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,
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| Min.:1 Mult.:1 | Screw | - | - | NO | 6 | - | 6 | SILICON | - | - | - | - | 12 A | - | - | - | - | - | - | M/A-COM TECHNOLOGY SOLUTIONS INC | - | MACOM | DU2860T | - | - | - | - | 1 | - | 200 °C | - | CERAMIC, METAL-SEALED COFIRED | - | ROUND | FLANGE MOUNT | - | Active | - | - | - | - | - | NOT SPECIFIED | 5.23 | Compliant | Yes | - | - | - | - | - | - | Bulk | - | - | - | EAR99 | - | 200 °C | -65 °C | - | - | FET General Purpose Power | - | - | RADIAL | FLAT | NOT SPECIFIED | compliant | - | - | O-CRFM-F6 | Not Qualified | - | SINGLE | - | - | ENHANCEMENT MODE | - | - | - | AMPLIFIER | N-CHANNEL | - | 12 A | 20 V | - | - | - | 12 A | - | 65 V | - | - | METAL-OXIDE SEMICONDUCTOR | 159 W | - | - | VERY HIGH FREQUENCY BAND | - | - | - | - | - | - | ||
| DU2860T | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #UF2815BTwicea Part #482-369-UF2815B | MA-COM |
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-6
Datasheet
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| 24
In Stock
| Min.:1 Mult.:1 | Screw | - | - | YES | 6 | - | 6 | SILICON | - | MACOM | - | - | 4.2 A | - | - | 20 | - | - | - | M/A-COM TECHNOLOGY SOLUTIONS INC | - | MACOM | UF2815B | - | - | - | - | 1 | - | 200 °C | - | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F6 | RECTANGULAR | FLANGE MOUNT | - | Active | - | - | - | - | - | NOT SPECIFIED | 5.3 | Compliant | Yes | - | - | - | - | - | - | Bulk | - | Yes | - | EAR99 | - | 200 °C | -55 °C | - | 8541.29.00.75 | MOSFETs | - | Si | DUAL | FLAT | NOT SPECIFIED | compliant | - | 6 | R-CDFM-F6 | Not Qualified | - | SINGLE | - | - | ENHANCEMENT MODE | - | - | - | AMPLIFIER | N-CHANNEL | RF MOSFET Transistors | 4.2 A | 20 V | - | - | - | 4.2 A | - | 65 V | - | - | METAL-OXIDE SEMICONDUCTOR | 48.6 W | - | - | ULTRA HIGH FREQUENCY BAND | - | - | - | RF MOSFET Transistors | - | - | |
| UF2815B | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #UF28100MTwicea Part #482-369-UF28100M | MA-COM |
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Datasheet
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| 22
In Stock
| Min.:1 Mult.:1 | Screw | - | - | YES | 5 | - | 4 | SILICON | - | MACOM | Enhancement | 12(A) | 12 A | 50(Min)(%) | 65(V) | 10 | - | 500(MHz) | - | TE CONNECTIVITY LTD | 135(MAX)@28V(pF) | MACOM | UF28100M | - | - | Screw | - | 1 | -55C to 200C | 200 °C | 100 | CERAMIC, METAL-SEALED COFIRED | - | RECTANGULAR | FLANGE MOUNT | - | Transferred | - | 250000(mW) | 10(Min)(dB) | No | - | NOT SPECIFIED | 5.32 | Details | Yes | - | - | Military grade | - | - | - | - | - | - | - | EAR99 | - | 200 °C | -55 °C | - | 8541.29.00.75 | MOSFETs | 250 W | Si | DUAL | FLAT | NOT SPECIFIED | unknown | - | 5 | R-CDFM-F4 | Not Qualified | - | SINGLE | - | - | ENHANCEMENT MODE | SOURCE | - | - | AMPLIFIER | N-CHANNEL | RF MOSFET Transistors | 12 A | 20 V | - | - | 500 MHz | - | Military | 65 V | N | - | METAL-OXIDE SEMICONDUCTOR | - | - | 24 pF | ULTRA HIGH FREQUENCY BAND | 250 W | 100(MHz) | 10 dB | RF MOSFET Transistors | No | - | |
| UF28100M |
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