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UF28100V Tech Specifications

MACOM  UF28100V technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Package / Case 744A-01
Surface Mount YES
Number of Terminals 8Terminals
Transistor Element Material SILICON
Vds - Drain-Source Breakdown Voltage 65 V
Vgs th - Gate-Source Threshold Voltage 6 V
Pd - Power Dissipation 250 W
Transistor Polarity N-Channel
Maximum Operating Temperature + 150 C
Vgs - Gate-Source Voltage 20 V
Minimum Operating Temperature - 55 C
Factory Pack QuantityFactory Pack Quantity 10
Mounting Styles SMD/SMT
Forward Transconductance - Min 1.5 S
Manufacturer MACOM
Brand MACOM
RoHS Details
Id - Continuous Drain Current 12 A
Package Description FLANGE MOUNT, R-CDFM-F8
Package Style FLANGE MOUNT
Package Body Material CERAMIC, METAL-SEALED COFIRED
Reflow Temperature-Max (s) NOT SPECIFIED
Operating Temperature-Max 200 °C
Rohs Code Yes
Manufacturer Part Number UF28100V
Package Shape RECTANGULAR
Number of Elements 2 Elements
Part Life Cycle Code Active
Ihs Manufacturer M/A-COM TECHNOLOGY SOLUTIONS INC
Risk Rank 5.2
Drain Current-Max (ID) 12 A
Packaging Tray
Pbfree Code Yes
ECCN Code EAR99
Type RF Power MOSFET
Additional Feature LOW NOISE
Subcategory MOSFETs
Technology Si
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Pin Count 8
JESD-30 Code R-CDFM-F8
Qualification Status Not Qualified
Operating Frequency 100 MHz to 500 MHz
Configuration Dual
Operating Mode ENHANCEMENT MODE
Output Power 100 W
Transistor Application AMPLIFIER
Polarity/Channel Type N-CHANNEL
Product Type RF MOSFET Transistors
Gain 10 dB
Drain Current-Max (Abs) (ID) 12 A
DS Breakdown Voltage-Min 65 V
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 250 W
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
Product Category RF MOSFET Transistors
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