Memory Products For Sale - PDF - Integrated Circuits (ICs)

Image	Part #	Manufacturer	Description	Availability	Quantity	Mount	Surface Mount	Number of Pins	Number of Terminals	Manufacturer Package Identifier	Access Time-Max	Clock Frequency-Max (fCLK)	Ihs Manufacturer	Manufacturer	Manufacturer Part Number	Memory Types	Moisture Sensitivity Levels	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supply Voltage-Nom (Vsup)	Packaging	JESD-609 Code	Pbfree Code	ECCN Code	Terminal Finish	Max Operating Temperature	Min Operating Temperature	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Frequency	Pin Count	JESD-30 Code	Qualification Status	Operating Supply Voltage	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Interface	Max Supply Voltage	Min Supply Voltage	Memory Size	Number of Ports	Nominal Supply Current	Operating Mode	Supply Current-Max	Access Time	Organization	Output Characteristics	Seated Height-Max	Memory Width	Address Bus Width	Density	Standby Current-Max	Memory Density	Max Frequency	I/O Type	Memory IC Type	Refresh Cycles	Sequential Burst Length	Interleaved Burst Length	Access Mode	Self Refresh	Height	Length	Width	Lead Free
	Mfr. Part # K4B4G1646E-BYMA Twicea Part # 700-535-K4B4G1646E-BYMA	Samsung	FBGA-96 DDR SDRAM ROHS Datasheet Compare	3856 In Stock	Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
K4B4G1646E-BYMA 700-535-K4B4G1646E-BYMA Samsung RoHS : Package : - In Stock : 3856 1 : -
	Mfr. Part # K4B4G1646E-BCMA Twicea Part # 700-535-K4B4G1646E-BCMA	Samsung	FBGA DDR SDRAM ROHS Datasheet Compare	275 In Stock	Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
K4B4G1646E-BCMA 700-535-K4B4G1646E-BCMA Samsung RoHS : Package : - In Stock : 275 1 : -
	Mfr. Part # K4B1G1646G-BCH9 Twicea Part # 700-535-K4B1G1646G-BCH9	Samsung	- Datasheet Compare	906 In Stock	Min.:1 Mult.:1	-	YES	-	96	-	0.255 ns	667 MHz	SAMSUNG SEMICONDUCTOR INC	Samsung Semiconductor	K4B1G1646G-BCH9	-	3	67108864 words	64000000	-	-	PLASTIC/EPOXY	FBGA	FBGA, BGA96,9X16,32	BGA96,9X16,32	RECTANGULAR	GRID ARRAY, FINE PITCH	Obsolete	-	NOT SPECIFIED	8.58	-	Yes	1.5 V	-	e1	Yes	-	Tin/Silver/Copper (Sn/Ag/Cu)	-	-	-	-	DRAMs	CMOS	BOTTOM	BALL	225	-	0.8 mm	compliant	-	-	R-PBGA-B96	Not Qualified	-	-	1.5 V	-	-	-	-	-	-	-	-	-	0.17 mA	-	64MX16	3-STATE	-	16	-	-	0.01 A	1073741824 bit	-	COMMON	DDR DRAM	8192	4,8	4,8	-	-	-	-	-	-
K4B1G1646G-BCH9 700-535-K4B1G1646G-BCH9 Samsung RoHS : Package : - In Stock : 906 1 : -
	Mfr. Part # K4B2G1646F-BYMA Twicea Part # 700-535-K4B2G1646F-BYMA	Samsung	FBGA-96 DDR SDRAM ROHS Datasheet Compare	4480 In Stock	Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
K4B2G1646F-BYMA 700-535-K4B2G1646F-BYMA Samsung RoHS : Package : - In Stock : 4480 1 : -
	Mfr. Part # K4S561632J-UC75 Twicea Part # 700-535-K4S561632J-UC75	Samsung	- Datasheet Compare	223 In Stock	Min.:1 Mult.:1	Surface Mount	YES	54	54	TSOP(II)54	5.4 ns	133 MHz	SAMSUNG SEMICONDUCTOR INC	Samsung Semiconductor	K4S561632J-UC75	SDRAM	2	16777216 words	16000000	70 °C	-	PLASTIC/EPOXY	TSOP	-	TSOP54,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	-	NOT SPECIFIED	5.65	Compliant	Yes	3.3 V	Tape and Reel	e6	Yes	-	Tin/Bismuth (Sn97Bi3)	70 °C	0 °C	-	-	DRAMs	CMOS	DUAL	GULL WING	260	-	0.8 mm	unknown	133 MHz	-	R-PDSO-G54	Not Qualified	3.3 V	-	3.3 V	COMMERCIAL	-	Parallel	3.6 V	3 V	32 MB	-	110 mA	-	0.12 mA	7.5 ns	16MX16	3-STATE	-	16	15 b	256 Mb	0.002 A	268435456 bit	133 MHz	COMMON	SYNCHRONOUS DRAM	8192	1,2,4,8,FP	1,2,4,8	-	-	1.2 mm	-	-	Lead Free
K4S561632J-UC75 700-535-K4S561632J-UC75 Samsung RoHS : Package : - In Stock : 223 1 : -
	Mfr. Part # K4B2G0846D-HCH9 Twicea Part # 700-535-K4B2G0846D-HCH9	Samsung	DDR DRAM Datasheet Compare	600 In Stock	Min.:1 Mult.:1	-	YES	-	78	-	0.255 ns	667 MHz	SAMSUNG SEMICONDUCTOR INC	Samsung Semiconductor	K4B2G0846D-HCH9	-	-	268435456 words	256000000	85 °C	-	PLASTIC/EPOXY	FBGA	FBGA, BGA78,9X13,32	BGA78,9X13,32	RECTANGULAR	GRID ARRAY, FINE PITCH	Obsolete	-	-	5.79	-	Yes	1.5 V	-	-	-	-	-	-	-	-	-	DRAMs	CMOS	BOTTOM	BALL	-	-	0.8 mm	compliant	-	-	R-PBGA-B78	Not Qualified	-	-	1.5 V	OTHER	-	-	-	-	-	-	-	-	0.135 mA	-	256MX8	3-STATE	-	8	-	-	0.012 A	2147483648 bit	-	COMMON	DDR DRAM	8192	8	8	-	-	-	-	-	-
K4B2G0846D-HCH9 700-535-K4B2G0846D-HCH9 Samsung RoHS : Package : - In Stock : 600 1 : -
	Mfr. Part # K4S281632I-UC75 Twicea Part # 700-535-K4S281632I-UC75	Samsung	- Datasheet Compare	23 In Stock	Min.:1 Mult.:1	-	YES	-	54	-	5.4 ns	133 MHz	SAMSUNG SEMICONDUCTOR INC	Samsung Semiconductor	K4S281632I-UC75	-	3	8388608 words	8000000	70 °C	-	PLASTIC/EPOXY	TSOP2	TSOP2, TSOP54,.46,32	TSOP54,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	-	NOT SPECIFIED	8.33	-	Yes	3.3 V	-	e6	Yes	-	Tin/Bismuth (Sn97Bi3)	-	-	AUTO/SELF REFRESH	-	DRAMs	CMOS	DUAL	GULL WING	260	1	0.8 mm	compliant	-	-	R-PDSO-G54	Not Qualified	-	3.6 V	3.3 V	COMMERCIAL	3 V	-	-	-	-	1	-	SYNCHRONOUS	0.2 mA	-	8MX16	3-STATE	1.2 mm	16	-	-	0.002 A	134217728 bit	-	COMMON	SYNCHRONOUS DRAM	4096	1,2,4,8,FP	1,2,4,8	FOUR BANK PAGE BURST	YES	-	22.22 mm	10.16 mm	-
K4S281632I-UC75 700-535-K4S281632I-UC75 Samsung RoHS : Package : - In Stock : 23 1 : -
	Mfr. Part # K4S641632K-UC75 Twicea Part # 700-535-K4S641632K-UC75	Samsung	- Datasheet Compare	5000 In Stock	Min.:1 Mult.:1	-	YES	-	54	-	5.4 ns	133 MHz	SAMSUNG SEMICONDUCTOR INC	Samsung Semiconductor	K4S641632K-UC75	-	3	4194304 words	4000000	70 °C	-	PLASTIC/EPOXY	TSOP2	TSOP2, TSOP54,.46,32	TSOP54,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	-	-	5.79	-	Yes	3.3 V	-	e6	Yes	EAR99	Tin/Bismuth (Sn97Bi3)	-	-	AUTO/SELF REFRESH	-	DRAMs	CMOS	DUAL	GULL WING	-	1	0.8 mm	unknown	-	-	R-PDSO-G54	Not Qualified	-	3.6 V	3.3 V	COMMERCIAL	3 V	-	-	-	-	1	-	SYNCHRONOUS	0.085 mA	-	4MX16	3-STATE	1.2 mm	16	-	-	0.001 A	67108864 bit	-	COMMON	SYNCHRONOUS DRAM	4096	1,2,4,8,FP	1,2,4,8	FOUR BANK PAGE BURST	YES	-	22.22 mm	10.16 mm	-
K4S641632K-UC75 700-535-K4S641632K-UC75 Samsung RoHS : Package : - In Stock : 5000 1 : -
	Mfr. Part # K4S281632F-UC75 Twicea Part # 700-535-K4S281632F-UC75	Samsung	- Datasheet Compare	6729 In Stock	Min.:1 Mult.:1	-	YES	-	54	-	6 ns	133 MHz	SAMSUNG SEMICONDUCTOR INC	Samsung Semiconductor	K4S281632F-UC75	-	3	8388608 words	8000000	70 °C	-	PLASTIC/EPOXY	TSOP2	TSOP2, TSOP54,.46,32	TSOP54,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	-	NOT SPECIFIED	8.4	-	Yes	3.3 V	-	e6	Yes	EAR99	Tin/Bismuth (Sn97Bi3)	-	-	AUTO/SELF REFRESH	8542.32.00.02	DRAMs	CMOS	DUAL	GULL WING	260	1	0.8 mm	unknown	-	-	R-PDSO-G54	Not Qualified	-	3.6 V	3.3 V	COMMERCIAL	3 V	-	-	-	-	1	-	SYNCHRONOUS	0.2 mA	-	8MX16	3-STATE	1.2 mm	16	-	-	0.002 A	134217728 bit	-	COMMON	SYNCHRONOUS DRAM	4096	1,2,4,8,FP	1,2,4,8	FOUR BANK PAGE BURST	YES	-	22.22 mm	10.16 mm	-
K4S281632F-UC75 700-535-K4S281632F-UC75 Samsung RoHS : Package : - In Stock : 6729 1 : -
	Mfr. Part # K4S643232H-UC60 Twicea Part # 700-535-K4S643232H-UC60	Samsung	- Datasheet Compare	36000 In Stock	Min.:1 Mult.:1	-	YES	-	86	-	5.5 ns	166 MHz	SAMSUNG SEMICONDUCTOR INC	Samsung Semiconductor	K4S643232H-UC60	-	3	2097152 words	2000000	70 °C	-	PLASTIC/EPOXY	TSSOP	-	TSSOP86,.46,20	RECTANGULAR	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	Obsolete	-	40	5.52	-	Yes	3.3 V	-	e6	-	-	Tin/Bismuth (Sn97Bi3)	-	-	-	-	DRAMs	CMOS	DUAL	GULL WING	260	-	0.5 mm	unknown	-	-	R-PDSO-G86	Not Qualified	-	-	3.3 V	COMMERCIAL	-	-	-	-	-	-	-	-	0.15 mA	-	2MX32	3-STATE	-	32	-	-	0.002 A	67108864 bit	-	COMMON	SYNCHRONOUS DRAM	4096	1,2,4,8,FP	1,2,4,8	-	-	-	-	-	-
K4S643232H-UC60 700-535-K4S643232H-UC60 Samsung RoHS : Package : - In Stock : 36000 1 : -
	Mfr. Part # K4H561638H-UCB3 Twicea Part # 700-535-K4H561638H-UCB3	Samsung	- Datasheet Compare	6580 In Stock	Min.:1 Mult.:1	-	YES	-	66	-	0.7 ns	166 MHz	SAMSUNG SEMICONDUCTOR INC	Samsung Semiconductor	K4H561638H-UCB3	-	3	16777216 words	16000000	70 °C	-	PLASTIC/EPOXY	TSSOP	-	TSSOP66,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	Obsolete	-	40	5.79	Compliant	Yes	2.3 V	-	e6	Yes	-	Tin/Bismuth (Sn97Bi3)	-	-	-	-	DRAMs	CMOS	DUAL	GULL WING	260	-	0.635 mm	unknown	166 MHz	-	R-PDSO-G66	Not Qualified	-	-	2.3 V	COMMERCIAL	-	-	-	-	-	-	-	-	0.33 mA	-	16MX16	3-STATE	-	16	-	-	0.003 A	268435456 bit	-	COMMON	DDR DRAM	8192	2,4,8	2,4,8	-	-	-	-	-	Lead Free
K4H561638H-UCB3 700-535-K4H561638H-UCB3 Samsung RoHS : Package : - In Stock : 6580 1 : -
	Mfr. Part # K4T51163QJ-BCE7 Twicea Part # 700-535-K4T51163QJ-BCE7	Samsung	- Datasheet Compare	1500 In Stock	Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
K4T51163QJ-BCE7 700-535-K4T51163QJ-BCE7 Samsung RoHS : Package : - In Stock : 1500 1 : -
	Mfr. Part # K4H561638H-UCCC Twicea Part # 700-535-K4H561638H-UCCC	Samsung	- Datasheet Compare	33 In Stock	Min.:1 Mult.:1	-	YES	-	66	-	0.65 ns	200 MHz	SAMSUNG SEMICONDUCTOR INC	Samsung Semiconductor	K4H561638H-UCCC	-	3	16777216 words	16000000	70 °C	-	PLASTIC/EPOXY	TSSOP	-	TSSOP66,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	Obsolete	-	NOT SPECIFIED	5.8	-	Yes	2.5 V	-	e6	Yes	-	Tin/Bismuth (Sn97Bi3)	-	-	-	-	DRAMs	CMOS	DUAL	GULL WING	260	-	0.635 mm	unknown	-	-	R-PDSO-G66	Not Qualified	-	-	2.5 V	COMMERCIAL	-	-	-	-	-	-	-	-	0.35 mA	-	16MX16	3-STATE	-	16	-	-	0.004 A	268435456 bit	-	COMMON	DDR DRAM	8192	2,4,8	2,4,8	-	-	-	-	-	-
K4H561638H-UCCC 700-535-K4H561638H-UCCC Samsung RoHS : Package : - In Stock : 33 1 : -
	Mfr. Part # K4S561632E-UC75 Twicea Part # 700-535-K4S561632E-UC75	Samsung	- Datasheet Compare	5030 In Stock	Min.:1 Mult.:1	-	YES	-	54	-	5.4 ns	133 MHz	SAMSUNG SEMICONDUCTOR INC	Samsung Semiconductor	K4S561632E-UC75	-	3	16777216 words	16000000	70 °C	-	PLASTIC/EPOXY	TSOP2	TSOP2, TSOP54,.46,32	TSOP54,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	-	NOT SPECIFIED	5.66	-	Yes	3.3 V	-	e6	Yes	-	Tin/Bismuth (Sn96Bi4)	-	-	AUTO/SELF REFRESH	-	DRAMs	CMOS	DUAL	GULL WING	260	1	0.8 mm	unknown	-	-	R-PDSO-G54	Not Qualified	-	3.6 V	3.3 V	COMMERCIAL	3 V	-	-	-	-	1	-	SYNCHRONOUS	0.18 mA	-	16MX16	3-STATE	1.2 mm	16	-	-	0.002 A	268435456 bit	-	COMMON	SYNCHRONOUS DRAM	8192	1,2,4,8,FP	1,2,4,8	FOUR BANK PAGE BURST	YES	-	22.22 mm	10.16 mm	-
K4S561632E-UC75 700-535-K4S561632E-UC75 Samsung RoHS : Package : - In Stock : 5030 1 : -
	Mfr. Part # K4S281632O-LI75T00 Twicea Part # 700-535-K4S281632O-LI75T00	Samsung Semiconductor	- Datasheet Compare		Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
K4S281632O-LI75T00 700-535-K4S281632O-LI75T00 Samsung Semiconductor RoHS : Package : - In Stock : - 1 : -
	Mfr. Part # K4H511638D-UCCC Twicea Part # 700-535-K4H511638D-UCCC	Samsung	DDR DRAM Datasheet Compare	6780 In Stock	Min.:1 Mult.:1	-	YES	-	66	-	0.65 ns	200 MHz	SAMSUNG SEMICONDUCTOR INC	Samsung Semiconductor	K4H511638D-UCCC	-	3	33554432 words	32000000	70 °C	-	PLASTIC/EPOXY	TSSOP	-	TSSOP66,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	Obsolete	-	NOT SPECIFIED	5.81	-	Yes	2.6 V	-	e6	Yes	-	Tin/Bismuth (Sn97Bi3)	-	-	-	-	DRAMs	CMOS	DUAL	GULL WING	260	-	0.635 mm	unknown	-	-	R-PDSO-G66	Not Qualified	-	-	2.6 V	COMMERCIAL	-	-	-	-	-	-	-	-	0.4 mA	-	32MX16	3-STATE	-	16	-	-	0.005 A	536870912 bit	-	COMMON	DDR DRAM	8192	2,4,8	2,4,8	-	-	-	-	-	-
K4H511638D-UCCC 700-535-K4H511638D-UCCC Samsung RoHS : Package : - In Stock : 6780 1 : -
	Mfr. Part # K4S281632I-UI75 Twicea Part # 700-535-K4S281632I-UI75	Samsung	Synchronous DRAM Datasheet Compare	196 In Stock	Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
K4S281632I-UI75 700-535-K4S281632I-UI75 Samsung RoHS : Package : - In Stock : 196 1 : -
	Mfr. Part # K4H511638D-UCB3 Twicea Part # 700-535-K4H511638D-UCB3	Samsung	DDR DRAM Datasheet Compare		Min.:1 Mult.:1	-	YES	-	66	-	0.7 ns	166 MHz	SAMSUNG SEMICONDUCTOR INC	Samsung Semiconductor	K4H511638D-UCB3	-	2	33554432 words	32000000	70 °C	-	PLASTIC/EPOXY	TSSOP	-	TSSOP66,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	Obsolete	-	NOT SPECIFIED	5.82	-	Yes	2.5 V	-	e6	Yes	-	Tin/Bismuth (Sn97Bi3)	-	-	-	-	DRAMs	CMOS	DUAL	GULL WING	260	-	0.635 mm	unknown	-	-	R-PDSO-G66	Not Qualified	-	-	2.5 V	COMMERCIAL	-	-	-	-	-	-	-	-	0.38 mA	-	32MX16	3-STATE	-	16	-	-	0.005 A	536870912 bit	-	COMMON	DDR DRAM	8192	2,4,8	2,4,8	-	-	-	-	-	-
K4H511638D-UCB3 700-535-K4H511638D-UCB3 Samsung RoHS : Package : - In Stock : - 1 : -
	Mfr. Part # K4S281632K-UC60 Twicea Part # 700-535-K4S281632K-UC60	Samsung	Synchronous DRAM Datasheet Compare	117 In Stock	Min.:1 Mult.:1	-	YES	-	54	-	5 ns	200 MHz	SAMSUNG SEMICONDUCTOR INC	Samsung Semiconductor	K4S281632K-UC60	-	3	8388608 words	8000000	70 °C	-	PLASTIC/EPOXY	TSOP2	TSOP2, TSOP54,.46,32	TSOP54,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP2	NOT SPECIFIED	5.72	-	Yes	3.3 V	-	-	Yes	EAR99	-	-	-	AUTO/SELF REFRESH	8542.32.00.02	DRAMs	CMOS	DUAL	GULL WING	NOT SPECIFIED	1	0.8 mm	unknown	-	54	R-PDSO-G54	Not Qualified	-	3.6 V	3.3 V	COMMERCIAL	3 V	-	-	-	-	1	-	SYNCHRONOUS	0.22 mA	-	8MX16	3-STATE	1.2 mm	16	-	-	0.002 A	134217728 bit	-	COMMON	SYNCHRONOUS DRAM	4096	1,2,4,8,FP	1,2,4,8	FOUR BANK PAGE BURST	YES	-	22.22 mm	10.16 mm	-
K4S281632K-UC60 700-535-K4S281632K-UC60 Samsung RoHS : Package : - In Stock : 117 1 : -
	Mfr. Part # K4S561632J-UI75 Twicea Part # 700-535-K4S561632J-UI75	Samsung	Synchronous DRAM Datasheet Compare	100 In Stock	Min.:1 Mult.:1	-	YES	-	54	-	5.4 ns	133 MHz	SAMSUNG SEMICONDUCTOR INC	Samsung Semiconductor	K4S561632J-UI75	-	3	16777216 words	16000000	85 °C	-40 °C	PLASTIC/EPOXY	TSOP2	TSOP2, TSOP54,.46,32	TSOP54,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	-	NOT SPECIFIED	5.82	-	Yes	3.3 V	-	e6	Yes	-	Tin/Bismuth (Sn97Bi3)	-	-	AUTO/SELF REFRESH	-	DRAMs	CMOS	DUAL	GULL WING	260	1	0.8 mm	unknown	-	-	R-PDSO-G54	Not Qualified	-	3.6 V	3.3 V	INDUSTRIAL	3 V	-	-	-	-	1	-	SYNCHRONOUS	0.18 mA	-	16MX16	3-STATE	1.2 mm	16	-	-	0.002 A	268435456 bit	-	COMMON	SYNCHRONOUS DRAM	8192	1,2,4,8,FP	1,2,4,8	FOUR BANK PAGE BURST	YES	-	22.22 mm	10.16 mm	-
K4S561632J-UI75 700-535-K4S561632J-UI75 Samsung RoHS : Package : - In Stock : 100 1 : -

Integrated Circuits (ICs)

Memory definition: Memory is a component used to store programs and various data information. A memory cell is actually a type of sequential logic circuit. A m... Memory Product Listing: K4B4G1646E-BYMA,K4B4G1646E-BCMA,K4B1G1646G-BCH9,K4B2G1646F-BYMA,K4S561632J-UC75.Integrated Circuits (ICs) type:Embedded - Microcontrollers(134263),Memory(116337),PMIC - Voltage Regulators - Linear(107072),PMIC - Supervisors(101983),Embedded - FPGAs (Field Programmable Gate Array)(62862) .Memory has 1151 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Twicea.

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Integrated Circuits (ICs)