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| Image | Part # | Manufacturer | Description | Availability | Pricing | Quantity | Factory Lead Time | Contact plating | Surface Mount | Number of pins | Number of Terminals | Transistor Element Material | Exterior Housing Material | Connector | Connector pinout layout | Contacts pitch | Date Of Intro | Drain Current-Max (ID) | Electrical mounting | Gross weight | Ihs Manufacturer | Kind of connector | Manufacturer Package Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Rohs Code | Row pitch | Spatial orientation | Turn-off Time-Max (toff) | Turn-on Time-Max (ton) | Type of connector | Operating temperature | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Additional Feature | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Current rating | Time@Peak Reflow Temperature-Max (s) | Pin Count | Reference Standard | JESD-30 Code | Qualification Status | Configuration | Operating Mode | Case Connection | Transistor Application | Polarity/Channel Type | JEDEC-95 Code | Drain-source On Resistance-Max | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | Power Dissipation-Max (Abs) | Rated voltage | Feedback Cap-Max (Crss) | Highest Frequency Band | Profile | Saturation Current | Plating thickness | Flammability rating |
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  | Mfr. Part #BUK7M10-40ETwicea Part #554-375-BUK7M10-40E | Nexperia |
Description: Power Field-Effect Transistor
Datasheet
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| 36000
In Stock
| Min.:1 Mult.:1 | - | - | YES | - | 4 | SILICON | 1 | - | - | - | 2017-02-17 | 56 A | - | - | NEXPERIA | - | - | - | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-G4 | RECTANGULAR | SMALL OUTLINE | Active | - | Yes | - | - | - | - | - | - | e3 | - | EAR99 | TIN | - | SINGLE | GULL WING | 260 | not_compliant | - | 30 | - | AEC-Q101; IEC-60134 | R-PSSO-G4 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | 0.01 Ω | 224 A | 40 V | 30.6 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | 1 | - | - | |
| BUK7M10-40E | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #TK6A65DTwicea Part #4669-375-TK6A65D | Toshiba America Electronic Components |
TRANSISTOR 6 A, 650 V, 1.11 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 2-10U1B, SC-67, 3 PIN, FET General Purpose Power
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| 6000
In Stock
| Min.:1 Mult.:1 | - | - | NO | - | 3 | SILICON | 1 | - | - | - | - | 6 A | - | - | TOSHIBA CORP | - | - | 150 °C | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Active | SC-67 | Yes | - | - | - | - | - | - | - | - | EAR99 | - | - | SINGLE | THROUGH-HOLE | - | unknown | - | - | 3 | - | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | 1.11 Ω | 24 A | 650 V | 281 mJ | METAL-OXIDE SEMICONDUCTOR | 45 W | - | 5 pF | - | - | - | - | - | |
| TK6A65D | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #RQA0009SXTL-ETwicea Part #391-375-RQA0009SXTL-E | Renesas Electronics Corporation |
Description: 3.2A, 16V, N-CHANNEL, Si, POWER, MOSFET, SC-62, UPAK-3
Datasheet
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| Min.:1 Mult.:1 | - | - | YES | - | 3 | SILICON | 1 | - | - | - | - | 3.2 A | - | - | RENESAS ELECTRONICS CORP | - | - | 150 °C | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-F3 | RECTANGULAR | SMALL OUTLINE | Active | SC-62 | Yes | - | - | - | - | - | - | - | Yes | EAR99 | - | - | SINGLE | FLAT | NOT SPECIFIED | compliant | - | NOT SPECIFIED | 3 | - | R-PSSO-F3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | SOURCE | - | N-CHANNEL | - | - | - | 16 V | - | METAL-OXIDE SEMICONDUCTOR | 15 W | - | - | - | - | - | - | - | ||
| RQA0009SXTL-E | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #STU601STwicea Part #16649-375-STU601S | SamHop Microelectronics Corp. |
Transistor
Datasheet
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| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | SAMHOP MICROELECTRONICS CORP | - | - | - | - | - | , | - | - | Contact Manufacturer | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| STU601S | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #AON7422Twicea Part #62-375-AON7422 | Alpha & Omega Semiconductor |
Power Field-Effect Transistor, 40A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 3 X 3 MM, GREEN, DFN-8
Datasheet
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| 500
In Stock
| Min.:1 Mult.:1 | - | gold-plated | YES | 38 | 5 | SILICON | 1 | socket | 2x19 | 2.54mm | - | 40 A | THT | 1.75 g | ALPHA & OMEGA SEMICONDUCTOR LTD | female | - | - | - | PLASTIC/EPOXY | SMALL OUTLINE, S-PDSO-F5 | SQUARE | SMALL OUTLINE | Obsolete | DFN | Yes | 2.54mm | straight | - | - | pin strips | -40...163°C | - | Yes | EAR99 | - | - | DUAL | FLAT | NOT SPECIFIED | compliant | 1.5A | NOT SPECIFIED | 8 | - | S-PDSO-F5 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | 0.006 Ω | 150 A | 30 V | - | METAL-OXIDE SEMICONDUCTOR | - | 60V | - | - | beryllium copper | - | 0.254µm | UL94V-0 | |
| AON7422 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #SSM3J56MFVTwicea Part #4669-375-SSM3J56MFV | Toshiba America Electronic Components |
TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal
Datasheet
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| 1000
In Stock
| Min.:1 Mult.:1 | - | gold-plated | YES | 4 | 3 | SILICON | 1 | socket | 2x2 | 2.54mm | - | 0.8 A | THT | 0.18 g | TOSHIBA CORP | female | - | 150 °C | - | PLASTIC/EPOXY | - | RECTANGULAR | SMALL OUTLINE | Active | - | Yes | 2.54mm | straight | - | - | pin strips | -40...163°C | - | - | EAR99 | - | - | DUAL | FLAT | NOT SPECIFIED | unknown | 1.5A | NOT SPECIFIED | - | - | R-PDSO-F3 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | P-CHANNEL | - | 0.39 Ω | - | 20 V | - | METAL-OXIDE SEMICONDUCTOR | 0.5 W | 60V | 10 pF | - | beryllium copper | - | 0.254µm | UL94V-0 | |
| SSM3J56MFV | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #BUK7M27-80ETwicea Part #554-375-BUK7M27-80E | Nexperia |
Power Field-Effect Transistor
Datasheet
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| 22500
In Stock
| Min.:1 Mult.:1 | - | gold-plated | YES | 72 | 4 | SILICON | 1 | socket | 2x36 | 2.54mm | 2017-02-17 | 30 A | THT | 2.52 g | NEXPERIA | female | - | - | - | PLASTIC/EPOXY | - | RECTANGULAR | SMALL OUTLINE | Active | - | Yes | 2.54mm | straight | - | - | pin strips | -40...163°C | e3 | - | EAR99 | TIN | - | SINGLE | GULL WING | 260 | not_compliant | 1.5A | 30 | - | AEC-Q101; IEC-60134 | R-PSSO-G4 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | 0.027 Ω | 121 A | 80 V | 28.3 mJ | METAL-OXIDE SEMICONDUCTOR | - | 60V | - | - | beryllium copper | 1 | 0.254µm | UL94V-0 | |
| BUK7M27-80E | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #TK9A90ETwicea Part #4669-375-TK9A90E | Toshiba America Electronic Components |
Description: Power MOSFET - Nch 700V<VDSS
Datasheet
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| 27500
In Stock
| Min.:1 Mult.:1 | 16 Weeks | gold-plated | NO | 54 | 3 | SILICON | 1 | socket | 2x27 | 2.54mm | - | 9 A | THT | 1.89 g | TOSHIBA CORP | female | - | - | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Active | - | - | 2.54mm | straight | - | - | pin strips | -40...163°C | - | - | EAR99 | - | - | SINGLE | THROUGH-HOLE | - | unknown | 1.5A | - | - | - | R-PSFM-T3 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | ISOLATED | SWITCHING | N-CHANNEL | TO-220AB | 1.3 Ω | 27 A | 900 V | 454 mJ | METAL-OXIDE SEMICONDUCTOR | - | 60V | - | - | beryllium copper | - | 0.254µm | UL94V-0 | |
| TK9A90E | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #SCT2080KETwicea Part #687-375-SCT2080KE | ROHM Semiconductor |
Power Field-Effect Transistor, 40A I(D), 1200V, 0.117ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3
Datasheet
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| 100
In Stock
| Min.:1 Mult.:1 | - | gold-plated | NO | 92 | 3 | SILICON CARBIDE | 1 | socket | 2x46 | 2.54mm | - | 40 A | THT | 3.22 g | ROHM CO LTD | female | - | 175 °C | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Active | TO-247 | Yes | 2.54mm | straight | - | - | pin strips | -40...163°C | - | Yes | EAR99 | - | - | SINGLE | THROUGH-HOLE | NOT SPECIFIED | compliant | 1.5A | NOT SPECIFIED | 3 | - | R-PSFM-T3 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | TO-247 | 0.117 Ω | 80 A | 1200 V | - | METAL-OXIDE SEMICONDUCTOR | 262 W | 60V | - | - | beryllium copper | - | 0.254µm | UL94V-0 | |
| SCT2080KE | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #IMW120R060M1HTwicea Part #376-375-IMW120R060M1H | Infineon Technologies AG |
Description: Power Field-Effect Transistor,
Datasheet
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| 1280
In Stock
| Min.:1 Mult.:1 | - | gold-plated | NO | 64 | 3 | SILICON CARBIDE | 1 | socket | 2x32 | 2.54mm | - | 36 A | THT | 2.24 g | INFINEON TECHNOLOGIES AG | female | - | 175 °C | -55 °C | PLASTIC/EPOXY | - | RECTANGULAR | FLANGE MOUNT | Active | - | Yes | 2.54mm | straight | - | - | pin strips | -40...163°C | e3 | - | EAR99 | TIN | - | SINGLE | THROUGH-HOLE | 260 | compliant | 1.5A | 10 | - | - | R-PSFM-T3 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | TO-247 | 0.106 Ω | 76 A | 1200 V | - | METAL-OXIDE SEMICONDUCTOR | 150 W | 60V | 6.5 pF | - | beryllium copper | - | 0.254µm | UL94V-0 | |
| IMW120R060M1H | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #TPCC8104Twicea Part #4669-375-TPCC8104 | Toshiba America Electronic Components |
TRANSISTOR 20000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, 2-3X1S, TSON-8, FET General Purpose Small Signal
Datasheet
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| 21000
In Stock
| Min.:1 Mult.:1 | - | gold-plated | YES | 62 | 8 | SILICON | 1 | socket | 2x31 | 2.54mm | - | 20 A | THT | 2.17 g | TOSHIBA CORP | female | - | - | - | PLASTIC/EPOXY | 2-3X1S, TSON-8 | RECTANGULAR | SMALL OUTLINE | Active | - | - | 2.54mm | straight | - | - | pin strips | -40...163°C | - | - | EAR99 | - | - | DUAL | FLAT | - | unknown | 1.5A | - | 8 | - | R-PDSO-F8 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | P-CHANNEL | - | 0.0124 Ω | - | 30 V | - | METAL-OXIDE SEMICONDUCTOR | - | 60V | - | - | beryllium copper | - | 0.254µm | UL94V-0 | |
| TPCC8104 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #TK13A60DTwicea Part #4669-375-TK13A60D | Toshiba America Electronic Components |
TRANSISTOR 13 A, 600 V, 0.43 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 2-10U1B, SC-67, 3 PIN, FET General Purpose Power
Datasheet
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| 2200
In Stock
| Min.:1 Mult.:1 | - | gold-plated | NO | 18 | 3 | SILICON | 1 | socket | 1x18 | 2.54mm | - | 13 A | THT | 0.68 g | TOSHIBA CORP | female | - | 150 °C | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | End Of Life | SC-67 | - | - | straight | - | - | pin strips | -40...163°C | - | - | EAR99 | - | - | SINGLE | THROUGH-HOLE | - | unknown | 1.5A | - | 3 | - | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | ISOLATED | SWITCHING | N-CHANNEL | - | 0.43 Ω | 52 A | 600 V | 511 mJ | METAL-OXIDE SEMICONDUCTOR | 50 W | 60V | - | - | beryllium copper | - | 0.254µm | UL94V-0 | |
| TK13A60D | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #PMV37ENEATwicea Part #554-375-PMV37ENEA | Nexperia |
Description: Small Signal Field-Effect Transistor
Datasheet
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| 3689
In Stock
| Min.:1 Mult.:1 | - | gold-plated | - | 5 | - | - | - | socket | 1x5 | 2.54mm | 2019-05-21 | - | THT | 0.38 g | NEXPERIA | female | - | - | - | - | - | - | - | Active | - | Yes | - | straight | - | - | pin strips | -40...163°C | e3 | - | EAR99 | TIN | - | - | - | 260 | compliant | 1.5A | 30 | - | AEC-Q101; IEC-60134 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 60V | - | - | beryllium copper | 1 | 0.75µm | UL94V-0 | |
| PMV37ENEA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #IPW65R041CFD7Twicea Part #376-375-IPW65R041CFD7 | Infineon Technologies AG |
Power Field-Effect Transistor,
Datasheet
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| 8000
In Stock
| Min.:1 Mult.:1 | - | gold-plated | NO | 43 | 3 | SILICON | 1 | socket | 1x43 | 2.54mm | 2020-06-23 | 50 A | THT | 2.06 g | INFINEON TECHNOLOGIES AG | female | - | 150 °C | -55 °C | PLASTIC/EPOXY | , | RECTANGULAR | FLANGE MOUNT | Active | - | - | - | straight | - | - | pin strips | -40...163°C | e3 | - | EAR99 | TIN | - | SINGLE | THROUGH-HOLE | - | unknown | 1.5A | - | - | - | R-PSFM-T3 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | TO-247 | 0.041 Ω | 211 A | 650 V | 248 mJ | METAL-OXIDE SEMICONDUCTOR | 227 W | 60V | - | - | beryllium copper | - | 0.254µm | UL94V-0 | |
| IPW65R041CFD7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #SSM3K35MFV,L3F(TTwicea Part #4669-375-SSM3K35MFV,L3F(T | Toshiba America Electronic Components |
Description: Small Signal Field-Effect Transistor, 0.18A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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| 160000
In Stock
| Min.:1 Mult.:1 | - | gold-plated | YES | 42 | 3 | SILICON | 1 | socket | 1x42 | 2.54mm | - | 0.18 A | THT | 2.02 g | TOSHIBA CORP | female | - | 150 °C | - | PLASTIC/EPOXY | - | RECTANGULAR | SMALL OUTLINE | Active | - | Yes | - | straight | - | - | pin strips | -40...163°C | - | - | EAR99 | - | - | DUAL | FLAT | - | compliant | 1.5A | - | - | - | R-PDSO-F3 | - | SINGLE WITH BUILT-IN DIODE AND RESISTOR | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | 4 Ω | - | 20 V | - | METAL-OXIDE SEMICONDUCTOR | 0.15 W | 60V | 4.1 pF | - | beryllium copper | - | 0.254µm | UL94V-0 | |
| SSM3K35MFV,L3F(T 4669-375-SSM3K35MFV,L3F(T Toshiba America Electronic Components
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| | Mfr. Part #18N25L-TF3-TTwicea Part #15973-375-18N25L-TF3-T | Unisonic Technologies Co Ltd |
Description: Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Datasheet
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| 4810
In Stock
| Min.:1 Mult.:1 | - | gold-plated | NO | 32 | - | - | 1 | socket | 1x32 | 2.54mm | - | 18 A | THT | 1.54 g | UNISONIC TECHNOLOGIES CO LTD | female | - | 150 °C | - | - | - | - | - | Active | - | Yes | - | straight | - | - | pin strips | -40...163°C | - | - | EAR99 | - | - | - | - | NOT SPECIFIED | compliant | 1.5A | NOT SPECIFIED | - | - | - | - | SINGLE | - | - | - | N-CHANNEL | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | 40 W | 60V | - | - | beryllium copper | - | 0.254µm | UL94V-0 | |
| 18N25L-TF3-T | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #TK17A80WTwicea Part #4669-375-TK17A80W | Toshiba America Electronic Components |
Description: POWER, FET
Datasheet
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| 10
In Stock
| Min.:1 Mult.:1 | - | gold-plated | NO | 27 | 3 | SILICON | 1 | socket | 1x27 | 2.54mm | - | 17 A | THT | 1.3 g | TOSHIBA CORP | female | - | - | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Active | - | - | - | straight | - | - | pin strips | -40...163°C | - | - | EAR99 | - | - | SINGLE | THROUGH-HOLE | - | unknown | 1.5A | - | - | - | R-PSFM-T3 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | ISOLATED | SWITCHING | N-CHANNEL | TO-220AB | 0.29 Ω | 68 A | 800 V | 475 mJ | METAL-OXIDE SEMICONDUCTOR | - | 60V | - | - | beryllium copper | - | 0.254µm | UL94V-0 | |
| TK17A80W | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #PSMN3R7-100BSETwicea Part #554-375-PSMN3R7-100BSE | Nexperia |
Power Field-Effect Transistor
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| 472
In Stock
| Min.:1 Mult.:1 | - | gold-plated | YES | 18 | 2 | SILICON | 1 | socket | 1x18 | 2.54mm | 2018-09-03 | 120 A | THT | 0.86 g | NEXPERIA | female | - | 175 °C | -55 °C | PLASTIC/EPOXY | - | RECTANGULAR | SMALL OUTLINE | Active | - | Yes | - | straight | 251 ns | 157 ns | pin strips | -40...163°C | e3 | - | EAR99 | TIN | - | SINGLE | GULL WING | 260 | not_compliant | 1.5A | 30 | - | IEC-60134 | R-PSSO-G2 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | 0.00395 Ω | 780 A | 100 V | 542 mJ | METAL-OXIDE SEMICONDUCTOR | 405 W | 60V | 494 pF | - | beryllium copper | 1 | 0.254µm | UL94V-0 | |
| PSMN3R7-100BSE | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #FLM4450-18FTwicea Part #293-375-FLM4450-18F | FUJITSU Semiconductor Limited |
Description: RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2
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| Min.:1 Mult.:1 | - | gold-plated | YES | 14 | 2 | GALLIUM ARSENIDE | 1 | socket | 1x14 | 2.54mm | - | 6 A | THT | 0.67 g | FUJITSU SEMICONDUCTOR AMERICA INC | female | CASE IK | - | - | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F2 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | - | straight | - | - | pin strips | -40...163°C | - | - | EAR99 | - | HIGH RELIABILITY | DUAL | FLAT | - | unknown | 1.5A | - | 3 | - | R-CDFM-F2 | Not Qualified | SINGLE | DEPLETION MODE | SOURCE | - | N-CHANNEL | - | - | - | 15 V | - | JUNCTION | - | 60V | - | C BAND | beryllium copper | - | 0.254µm | UL94V-0 | ||
| FLM4450-18F | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #FLM4450-18FTwicea Part #16007-375-FLM4450-18F | SUMITOMO ELECTRIC Device Innovations Inc |
Description: RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IK, 2 PIN
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| Min.:1 Mult.:1 | - | gold-plated | YES | 2 | 2 | GALLIUM ARSENIDE | 1 | socket | 1x2 | 2.54mm | - | 6 A | THT | 0.1 g | EUDYNA DEVICES INC | female | CASE IK | - | - | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F2 | RECTANGULAR | FLANGE MOUNT | Transferred | - | Yes | - | straight | - | - | pin strips | -40...163°C | - | Yes | EAR99 | - | HIGH RELIABILITY | DUAL | FLAT | NOT SPECIFIED | unknown | 1.5A | NOT SPECIFIED | 2 | - | R-CDFM-F2 | Not Qualified | SINGLE | DEPLETION MODE | SOURCE | AMPLIFIER | N-CHANNEL | - | - | - | 15 V | - | JUNCTION | - | 60V | - | C BAND | beryllium copper | - | 0.254µm | UL94V-0 | ||
| FLM4450-18F 16007-375-FLM4450-18F SUMITOMO ELECTRIC Device Innovations Inc
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