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Image Part # Manufacturer Description Availability Pricing Quantity Surface MountNumber of TerminalsTransistor Element MaterialIhs ManufacturerManufacturer Package CodeMoisture Sensitivity LevelsNumber of ElementsOperating Temperature-MaxPackagePackage Body MaterialPackage DescriptionPackage ShapePackage StylePart Life Cycle CodePart Package CodeRise Time-Max (tr)RoHSRohs CodeTurn-off Time-Max (toff)Turn-off Time-Nom (toff)Turn-on Time-Max (ton)Turn-on Time-Nom (ton)JESD-609 CodePbfree CodeECCN CodeTerminal FinishAdditional FeatureHTS CodeTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusConfigurationCase ConnectionTransistor ApplicationPolarity/Channel TypeJEDEC-95 CodePower Dissipation-Max (Abs)Collector Current-Max (IC)Collector-Emitter Voltage-MaxGate-Emitter Voltage-MaxVCEsat-MaxGate-Emitter Thr Voltage-MaxPower Dissipation Ambient-MaxFall Time-Max (tf)
Microsemi Corporation APT75GN60SG
Mfr. Part #
APT75GN60SG
Twicea Part #
530-372-APT75GN60SG 		Microsemi Corporation
Insulated Gate Bipolar Transistor
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    		 - - - MICROSEMI CORP - - - - - - - - - Transferred - - - - - - - - - - EAR99 - - - - - - compliant - - - - - - - - - - - - - - - - -
    APT75GN60SG
    APT75GN60SG

    530-372-APT75GN60SG Microsemi Corporation
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    Microsemi Corporation APT15GN120K
    Mfr. Part #
    APT15GN120K
    Twicea Part #
    530-372-APT15GN120K     		Microsemi Corporation
    Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN
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      		 NO 3 SILICON MICROSEMI CORP - - 1 150 °C - PLASTIC/EPOXY TO-220, 3 PIN RECTANGULAR FLANGE MOUNT Obsolete TO-220AB - - No - 355 ns - 19 ns - No EAR99 - - - SINGLE THROUGH-HOLE NOT SPECIFIED unknown NOT SPECIFIED 3 R-PSFM-T3 Not Qualified SINGLE - POWER CONTROL N-CHANNEL TO-220AB 195 W 45 A 1200 V 30 V - 6.5 V - -
      APT15GN120K
      APT15GN120K

      530-372-APT15GN120K Microsemi Corporation
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      Microsemi Corporation APT15GT60BR
      Mfr. Part #
      APT15GT60BR
      Twicea Part #
      530-372-APT15GT60BR       		Microsemi Corporation
      Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN
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        		 NO 3 SILICON MICROSEMI CORP - - 1 150 °C - PLASTIC/EPOXY TO-247, 3 PIN RECTANGULAR FLANGE MOUNT Transferred TO-247 18 ns - No - 258 ns - 24 ns e0 No EAR99 - AVALANCHE RATED - SINGLE THROUGH-HOLE NOT SPECIFIED unknown NOT SPECIFIED 3 R-PSFM-T3 Not Qualified SINGLE COLLECTOR POWER CONTROL N-CHANNEL TO-247 125 W 30 A 600 V 20 V - 5 V - 78 ns
        APT15GT60BR
        APT15GT60BR

        530-372-APT15GT60BR Microsemi Corporation
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        Microsemi Corporation APT110GL100JN
        Mfr. Part #
        APT110GL100JN
        Twicea Part #
        530-372-APT110GL100JN         		Microsemi Corporation
        110A, 1000V, N-CHANNEL IGBT, ISOTOP-4
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          		 NO 4 SILICON ADVANCED POWER TECHNOLOGY INC ISOTOP - 1 - - PLASTIC/EPOXY FLANGE MOUNT, R-PUFM-X4 RECTANGULAR FLANGE MOUNT Obsolete ISOTOP - - - - - - - - - EAR99 - LOW CONDUCTION LOSS 8541.29.00.95 UPPER UNSPECIFIED - unknown - 4 R-PUFM-X4 Not Qualified SINGLE ISOLATED - N-CHANNEL - - 110 A 1000 V - 3 V - 415 W -
          APT110GL100JN
          APT110GL100JN

          530-372-APT110GL100JN Microsemi Corporation
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          Microsemi Corporation APTGF50X60RTP3G
          Mfr. Part #
          APTGF50X60RTP3G
          Twicea Part #
          530-372-APTGF50X60RTP3G           		Microsemi Corporation
          Description: Insulated Gate Bipolar Transistor, 35A I(C), 600V V(BR)CES, N-Channel, MODULE-35
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            		 NO 35 SILICON MICROSEMI CORP - 1 7 150 °C - UNSPECIFIED FLANGE MOUNT, R-XUFM-X35 RECTANGULAR FLANGE MOUNT Transferred MODULE - - Yes - 153 ns - 52 ns e1 Yes EAR99 TIN SILVER COPPER LOW CONDUCTION LOSS - UPPER UNSPECIFIED - compliant - 35 R-XUFM-X35 Not Qualified COMPLEX ISOLATED MOTOR CONTROL N-CHANNEL - - 35 A 600 V - - - - -
            APTGF50X60RTP3G
            APTGF50X60RTP3G

            530-372-APTGF50X60RTP3G Microsemi Corporation
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            Microsemi Corporation APT25GP90B
            Mfr. Part #
            APT25GP90B
            Twicea Part #
            530-372-APT25GP90B             		Microsemi Corporation
            Insulated Gate Bipolar Transistor, 72A I(C), 900V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN
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              		 NO 3 SILICON MICROSEMI CORP - - 1 150 °C - PLASTIC/EPOXY TO-247, 3 PIN RECTANGULAR FLANGE MOUNT Transferred TO-247AD - - No - 190 ns - 29 ns - No EAR99 - LOW CONDUCTION LOSS - SINGLE THROUGH-HOLE NOT SPECIFIED unknown NOT SPECIFIED 3 R-PSFM-T3 Not Qualified SINGLE COLLECTOR POWER CONTROL N-CHANNEL TO-247AD 417 W 72 A 900 V 20 V - 6 V - -
              APT25GP90B
              APT25GP90B

              530-372-APT25GP90B Microsemi Corporation
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              Microsemi Corporation APTGT200U170D4G
              Mfr. Part #
              APTGT200U170D4G
              Twicea Part #
              530-372-APTGT200U170D4G               		Microsemi Corporation
              Insulated Gate Bipolar Transistor, 280A I(C), 1700V V(BR)CES, N-Channel, MODULE-4
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                		 NO 4 SILICON MICROSEMI CORP - 1 1 150 °C - UNSPECIFIED MODULE-4 RECTANGULAR FLANGE MOUNT Obsolete MODULE - - Yes - 965 ns - 330 ns e1 Yes EAR99 TIN SILVER COPPER - - UPPER UNSPECIFIED - unknown - 4 R-XUFM-X4 Not Qualified SINGLE WITH BUILT-IN DIODE ISOLATED MOTOR CONTROL N-CHANNEL - - 280 A 1700 V - - - - -
                APTGT200U170D4G
                APTGT200U170D4G

                530-372-APTGT200U170D4G Microsemi Corporation
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                Microsemi Corporation APTGT75X120RTP3
                Mfr. Part #
                APTGT75X120RTP3
                Twicea Part #
                530-372-APTGT75X120RTP3                 		Microsemi Corporation
                Insulated Gate Bipolar Transistor, 105A I(C), 1200V V(BR)CES, N-Channel, MODULE-35
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                  		 NO 35 SILICON MICROSEMI CORP - - 5 150 °C - UNSPECIFIED MODULE-35 RECTANGULAR FLANGE MOUNT Transferred MODULE - - No - 610 ns - 330 ns e0 No EAR99 TIN LEAD - - UPPER UNSPECIFIED - unknown - 35 R-XUFM-X35 Not Qualified COMPLEX ISOLATED MOTOR CONTROL N-CHANNEL - - 105 A 1200 V - - - - -
                  APTGT75X120RTP3
                  APTGT75X120RTP3

                  530-372-APTGT75X120RTP3 Microsemi Corporation
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                  Microsemi Corporation APT35GP120B2DF2
                  Mfr. Part #
                  APT35GP120B2DF2
                  Twicea Part #
                  530-372-APT35GP120B2DF2                   		Microsemi Corporation
                  Insulated Gate Bipolar Transistor, 96A I(C), 1200V V(BR)CES, N-Channel
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                    		 NO - - MICROSEMI CORP - - - 150 °C - - , - - Obsolete - - - - - - - - - - EAR99 - - - - - - compliant - 3 - - - - - N-CHANNEL - 543 W 96 A 1200 V 20 V - 6 V - -
                    APT35GP120B2DF2
                    APT35GP120B2DF2

                    530-372-APT35GP120B2DF2 Microsemi Corporation
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                    Microsemi Corporation APTGF25X120E2G
                    Mfr. Part #
                    APTGF25X120E2G
                    Twicea Part #
                    530-372-APTGF25X120E2G                     		Microsemi Corporation
                    Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, MODULE-17
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                      		 NO 17 SILICON MICROSEMI CORP - 1 6 150 °C - UNSPECIFIED FLANGE MOUNT, R-XUFM-X17 RECTANGULAR FLANGE MOUNT Obsolete MODULE - - Yes - 450 ns - 140 ns e1 Yes EAR99 TIN SILVER COPPER - - UPPER UNSPECIFIED - compliant - 17 R-XUFM-X17 Not Qualified BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE ISOLATED MOTOR CONTROL N-CHANNEL - - 35 A 1200 V - - - - -
                      APTGF25X120E2G
                      APTGF25X120E2G

                      530-372-APTGF25X120E2G Microsemi Corporation
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                      Hangzhou Silan Microelectronics SGT50T65FD1P7
                      Mfr. Part #
                      SGT50T65FD1P7
                      Twicea Part #
                      530-372-SGT50T65FD1P7                       		Hangzhou Silan Microelectronics
                      TO-247-3L IGBT Transistors / Modules ROHS
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                        		 - - - - - - - - Tube-packed - - - - - - - true - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
                        SGT50T65FD1P7
                        SGT50T65FD1P7

                        530-372-SGT50T65FD1P7 Hangzhou Silan Microelectronics
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                        Microsemi Corporation APT35GL60BN
                        Mfr. Part #
                        APT35GL60BN
                        Twicea Part #
                        530-372-APT35GL60BN                         		Microsemi Corporation
                        35A, 600V, N-CHANNEL IGBT, TO-247
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                          		 NO 3 SILICON ADVANCED POWER TECHNOLOGY INC - - 1 150 °C - PLASTIC/EPOXY FLANGE MOUNT, R-PSFM-T3 RECTANGULAR FLANGE MOUNT Obsolete - 100 ns - No 55 ns 35 ns 30 ns 15 ns e0 - EAR99 Tin/Lead (Sn/Pb) LOW CONDUCTION LOSS 8541.29.00.95 SINGLE THROUGH-HOLE - unknown - - R-PSFM-T3 Not Qualified SINGLE COLLECTOR - N-CHANNEL TO-247 147 W 35 A 600 V 20 V 2.5 V 6 V 147 W 700 ns
                          APT35GL60BN
                          APT35GL60BN

                          530-372-APT35GL60BN Microsemi Corporation
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                          Microsemi Corporation APTGF330SK60D3
                          Mfr. Part #
                          APTGF330SK60D3
                          Twicea Part #
                          530-372-APTGF330SK60D3                           		Microsemi Corporation
                          Insulated Gate Bipolar Transistor, 460A I(C), 600V V(BR)CES, N-Channel, MODULE-7
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                            		 NO 7 SILICON MICROSEMI CORP - - 1 150 °C - UNSPECIFIED MODULE-7 RECTANGULAR FLANGE MOUNT Obsolete MODULE - - No - 325 ns - 230 ns e0 No EAR99 TIN LEAD - - UPPER UNSPECIFIED - unknown - 7 R-XUFM-X7 Not Qualified SINGLE WITH BUILT-IN DIODE ISOLATED POWER CONTROL N-CHANNEL - - 460 A 600 V - - - - -
                            APTGF330SK60D3
                            APTGF330SK60D3

                            530-372-APTGF330SK60D3 Microsemi Corporation
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                            Microsemi Corporation APT35G50BN
                            Mfr. Part #
                            APT35G50BN
                            Twicea Part #
                            530-372-APT35G50BN                             		Microsemi Corporation
                            TRANSISTOR,IGBT,N-CHAN,500V V(BR)CES,35A I(C),TO-247
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                              		 NO - - ADVANCED POWER TECHNOLOGY INC - - - 150 °C - - , - - Obsolete - - - No - - - - e0 - EAR99 Tin/Lead (Sn/Pb) - - - - - unknown - - - - - - - N-CHANNEL - 162 W 35 A 500 V 20 V - 5 V - -
                              APT35G50BN
                              APT35G50BN

                              530-372-APT35G50BN Microsemi Corporation
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                              Microsemi Corporation APTGF125X60E3G
                              Mfr. Part #
                              APTGF125X60E3G
                              Twicea Part #
                              530-372-APTGF125X60E3G                               		Microsemi Corporation
                              Insulated Gate Bipolar Transistor, 180A I(C), 600V V(BR)CES, N-Channel, MODULE-33
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                                		 NO 33 SILICON MICROSEMI CORP - 1 6 150 °C - UNSPECIFIED FLANGE MOUNT, R-XUFM-X33 RECTANGULAR FLANGE MOUNT Obsolete MODULE - - Yes - 260 ns - 155 ns e1 Yes EAR99 TIN SILVER COPPER - - UPPER UNSPECIFIED - unknown - 33 R-XUFM-X33 Not Qualified BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE ISOLATED MOTOR CONTROL N-CHANNEL - - 180 A 600 V - - - - -
                                APTGF125X60E3G
                                APTGF125X60E3G

                                530-372-APTGF125X60E3G Microsemi Corporation
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                                Microsemi Corporation APTGF10X60RTP2G
                                Mfr. Part #
                                APTGF10X60RTP2G
                                Twicea Part #
                                530-372-APTGF10X60RTP2G                                 		Microsemi Corporation
                                Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, MODULE-24
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                                  		 NO 24 SILICON MICROSEMI CORP - 1 7 150 °C - UNSPECIFIED FLANGE MOUNT, R-XUFM-X24 RECTANGULAR FLANGE MOUNT Obsolete MODULE - - Yes - 260 ns - 70 ns e1 Yes EAR99 TIN SILVER COPPER LOW CONDUCTION LOSS - UPPER UNSPECIFIED - compliant - 24 R-XUFM-X24 Not Qualified COMPLEX ISOLATED MOTOR CONTROL N-CHANNEL - - 20 A 600 V - - - - -
                                  APTGF10X60RTP2G
                                  APTGF10X60RTP2G

                                  530-372-APTGF10X60RTP2G Microsemi Corporation
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                                  Microsemi Corporation APT35G60BN
                                  Mfr. Part #
                                  APT35G60BN
                                  Twicea Part #
                                  530-372-APT35G60BN                                   		Microsemi Corporation
                                  Description: TRANSISTOR,IGBT,N-CHAN,600V V(BR)CES,35A I(C),TO-247
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                                    		 NO - - ADVANCED POWER TECHNOLOGY INC - - - 150 °C - - , - - Obsolete - - - No - - - - e0 - EAR99 Tin/Lead (Sn/Pb) - - - - - unknown - - - - - - - N-CHANNEL - 162 W 35 A 600 V 20 V - 5 V - -
                                    APT35G60BN
                                    APT35G60BN

                                    530-372-APT35G60BN Microsemi Corporation
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                                    Microsemi Corporation APTGT300U170D4G
                                    Mfr. Part #
                                    APTGT300U170D4G
                                    Twicea Part #
                                    530-372-APTGT300U170D4G                                     		Microsemi Corporation
                                    Description: Insulated Gate Bipolar Transistor, 530A I(C), 1700V V(BR)CES, N-Channel, ROHS COMPLIANT, D4, 4 PIN
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                                      		 NO 4 SILICON MICROSEMI CORP - 1 1 150 °C - UNSPECIFIED ROHS COMPLIANT, D4, 4 PIN RECTANGULAR FLANGE MOUNT Obsolete - - - Yes - 1100 ns - 430 ns e1 Yes EAR99 TIN SILVER COPPER AVALANCHE RATED - UPPER UNSPECIFIED - compliant - 4 R-XUFM-X4 Not Qualified SINGLE WITH BUILT-IN DIODE ISOLATED POWER CONTROL N-CHANNEL - - 530 A 1700 V - - - - -
                                      APTGT300U170D4G
                                      APTGT300U170D4G

                                      530-372-APTGT300U170D4G Microsemi Corporation
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                                      Microsemi Corporation APT15GP60S
                                      Mfr. Part #
                                      APT15GP60S
                                      Twicea Part #
                                      530-372-APT15GP60S                                       		Microsemi Corporation
                                      Description: Insulated Gate Bipolar Transistor, 56A I(C), 600V V(BR)CES, N-Channel, D3PAK-3
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                                        		 YES 2 SILICON MICROSEMI CORP - - 1 150 °C - PLASTIC/EPOXY D3PAK-3 RECTANGULAR SMALL OUTLINE Transferred D2PAK - - No - 157 ns - 20 ns - No EAR99 - LOW CONDUCTION LOSS - SINGLE GULL WING NOT SPECIFIED unknown NOT SPECIFIED 3 R-PSSO-G2 Not Qualified SINGLE COLLECTOR POWER CONTROL N-CHANNEL - 250 W 56 A 600 V 20 V - 6 V - -
                                        APT15GP60S
                                        APT15GP60S

                                        530-372-APT15GP60S Microsemi Corporation
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                                        Microsemi Corporation APT130GL60JN
                                        Mfr. Part #
                                        APT130GL60JN
                                        Twicea Part #
                                        530-372-APT130GL60JN                                         		Microsemi Corporation
                                        130A, 600V, N-CHANNEL IGBT, ISOTOP-4
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                                          		 NO 4 SILICON ADVANCED POWER TECHNOLOGY INC ISOTOP - 1 - - PLASTIC/EPOXY FLANGE MOUNT, R-PUFM-X4 RECTANGULAR FLANGE MOUNT Obsolete ISOTOP - - - - - - - - - EAR99 - LOW CONDUCTION LOSS 8541.29.00.95 UPPER UNSPECIFIED - unknown - 4 R-PUFM-X4 Not Qualified SINGLE ISOLATED - N-CHANNEL - - 130 A 600 V - 2.5 V - 415 W -
                                          APT130GL60JN
                                          APT130GL60JN

                                          530-372-APT130GL60JN Microsemi Corporation
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                                          Discrete Semiconductor Products

                                          Transistors - IGBTs - Single definition: An IGBT(Insulated-Gate Bipolar Transistor) is a three-terminal power semiconductor device primarily used as an electronic switch. It consist... Transistors - IGBTs - Single Product Listing: APT75GN60SG,APT15GN120K,APT15GT60BR,APT110GL100JN,APTGF50X60RTP3G.Discrete Semiconductor Products type:Diodes - Zener - Single(126889),Diodes - Rectifiers - Single(107990),Transistors - FETs, MOSFETs - Single(66871),Transistors - Bipolar (BJT) - Single(41289),Diodes - Bridge Rectifiers(23480) .Transistors - IGBTs - Single has 63 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Twicea.