- All Products
- Discrete Semiconductor Products
- Transistors - IGBTs - Single
| Image | Part # | Manufacturer | Description | Availability | Pricing | Quantity | Transistor Element Material | Ihs Manufacturer | Number of Elements | Operating Temperature-Max | Package Description | Part Life Cycle Code | Part Package Code | Rohs Code | Turn-on Time-Nom (ton) | ECCN Code | Additional Feature | Reach Compliance Code | Qualification Status | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Collector Current-Max (IC) | Collector-Emitter Voltage-Max | Gate-Emitter Voltage-Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | Mfr. Part #MBB75AS6Twicea Part #3639-372-MBB75AS6 | Hitachi Ltd |
Insulated Gate Bipolar Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | SILICON | HITACHI LTD | 6 | - | , | Transferred | MODULE | - | 400 ns | EAR99 | HIGH SPEED, ULTRA SOFT FAST RECOVERY | unknown | Not Qualified | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | POWER CONTROL | N-CHANNEL | 75 A | 600 V | - | ||
| MBB75AS6 | ||||||||||||||||||||||||||
![]() | Mfr. Part #MBN400C33Twicea Part #3639-372-MBN400C33 | Hitachi Ltd |
Description: Insulated Gate Bipolar Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | SILICON | HITACHI LTD | 1 | - | , | Transferred | MODULE | - | 1200 ns | EAR99 | HIGH SPEED, ULTRA SOFT FAST RECOVERY | unknown | Not Qualified | SINGLE WITH BUILT-IN DIODE | ISOLATED | POWER CONTROL | N-CHANNEL | 400 A | 3300 V | - | ||
| MBN400C33 | ||||||||||||||||||||||||||
![]() | Mfr. Part #MBM400CS6ATwicea Part #3639-372-MBM400CS6A | Hitachi Ltd |
Insulated Gate Bipolar Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | SILICON | HITACHI LTD | 2 | - | , | Transferred | MODULE | - | 350 ns | EAR99 | HIGH SPEED, ULTRA SOFT FAST RECOVERY | unknown | Not Qualified | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | POWER CONTROL | N-CHANNEL | 400 A | 600 V | - | ||
| MBM400CS6A | ||||||||||||||||||||||||||
![]() | Mfr. Part #MBN1200H33DTwicea Part #3639-372-MBN1200H33D | Hitachi Ltd |
Insulated Gate Bipolar Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | - | HITACHI LTD | 1 | 125 °C | , | Contact Manufacturer | - | No | - | EAR99 | - | unknown | - | - | - | - | - | 1200 A | 3300 V | 20 V | ||
| MBN1200H33D |
Index :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ

