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Image Part # Manufacturer Description Availability Pricing Quantity Surface MountMaterialNumber of TerminalsTransistor Element MaterialExterior Housing MaterialCoercive ForceGross WeightIhs ManufacturerMaximum Energy ProductMaximum Operating TemperatureNumber of ElementsOperating Temperature-MaxPackage Body MaterialPackage DescriptionPackage ShapePackage StylePart Life Cycle CodeResidual Magnetic InductionTransport packaging size/quantityTransport Packaging Size/QuantityTurn-off Time-Nom (toff)Turn-on Time-Nom (ton)ECCN CodeTypeTerminal PositionTerminal FormReach Compliance CodeJESD-30 CodeConfigurationCase ConnectionTransistor ApplicationPolarity/Channel TypePower Dissipation-Max (Abs)Collector Current-Max (IC)Collector-Emitter Voltage-MaxGate-Emitter Voltage-MaxVCEsat-MaxGate-Emitter Thr Voltage-MaxGradeDiameterHeight
FUJITSU Limited 2MBI200VA-060-50
Mfr. Part #
2MBI200VA-060-50
Twicea Part #
293-372-2MBI200VA-060-50 		FUJITSU Limited
Insulated Gate Bipolar Transistor
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    		 NO - 7 SILICON 2 - - FUJITSU LTD - - - - UNSPECIFIED FLANGE MOUNT, R-XUFM-X7 RECTANGULAR FLANGE MOUNT Active - - - 600 ns 650 ns EAR99 - UPPER UNSPECIFIED compliant R-XUFM-X7 SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE ISOLATED MOTOR CONTROL N-CHANNEL - 200 A 600 V - - - - - -
    2MBI200VA-060-50
    2MBI200VA-060-50

    293-372-2MBI200VA-060-50 FUJITSU Limited
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    FUJITSU Semiconductor Limited 2MBI1200VG-170E
    Mfr. Part #
    2MBI1200VG-170E
    Twicea Part #
    293-372-2MBI1200VG-170E     		FUJITSU Semiconductor Limited
    Description: IGBT
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      		 NO - 10 SILICON - - - FUJITSU LTD - - 2 175 °C PLASTIC/EPOXY FLANGE MOUNT, R-PUFM-X10 RECTANGULAR FLANGE MOUNT Active - - - 2620 ns 3790 ns EAR99 - UPPER UNSPECIFIED unknown R-PUFM-X10 SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE ISOLATED POWER CONTROL N-CHANNEL - 1600 A 1700 V - - - - - -
      2MBI1200VG-170E
      2MBI1200VG-170E

      293-372-2MBI1200VG-170E FUJITSU Semiconductor Limited
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      FUJITSU Semiconductor Limited 2MBI100VA-060-50
      Mfr. Part #
      2MBI100VA-060-50
      Twicea Part #
      293-372-2MBI100VA-060-50       		FUJITSU Semiconductor Limited
      IGBT
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        		 NO - 7 SILICON 2 - 8.94 FUJITSU LTD - - - - UNSPECIFIED FLANGE MOUNT, R-XUFM-X7 RECTANGULAR FLANGE MOUNT Active - 28.5*21*19/500 - 600 ns 650 ns EAR99 - UPPER UNSPECIFIED unknown R-XUFM-X7 SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE ISOLATED MOTOR CONTROL N-CHANNEL - 100 A 600 V - - - - - -
        2MBI100VA-060-50
        2MBI100VA-060-50

        293-372-2MBI100VA-060-50 FUJITSU Semiconductor Limited
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        FUJITSU Limited 2MBI150VA-060-50
        Mfr. Part #
        2MBI150VA-060-50
        Twicea Part #
        293-372-2MBI150VA-060-50         		FUJITSU Limited
        Insulated Gate Bipolar Transistor
        Datasheet Compare
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          		 NO Sm/AlNiCo alloy with Ni-Cu-Ni coating 7 SILICON 2 by magnetic induction Hcb/ by magnetization Hcj - not less than 868/955 kA/m 6.21 FUJITSU LTD BHmax - 263…287 kJ/m³ Tmax - 80 °C - - UNSPECIFIED FLANGE MOUNT, R-XUFM-X7 RECTANGULAR FLANGE MOUNT Active Br - 1.17…1.22 T (11.7…12.2 kG) - 28.5*21*19/1000 600 ns 650 ns EAR99 RUICHI Samarium Cobalt Disc Magnet UPPER UNSPECIFIED compliant R-XUFM-X7 SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE ISOLATED MOTOR CONTROL N-CHANNEL - 150 A 600 V - - - N35 (normal) 15 mm 5 mm
          2MBI150VA-060-50
          2MBI150VA-060-50

          293-372-2MBI150VA-060-50 FUJITSU Limited
          RoHS :
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          FUJITSU Limited 2MBI600VG-170E
          Mfr. Part #
          2MBI600VG-170E
          Twicea Part #
          293-372-2MBI600VG-170E           		FUJITSU Limited
          Insulated Gate Bipolar Transistor
          Datasheet Compare
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            		 NO - 10 SILICON - - - FUJITSU LTD - - 2 175 °C PLASTIC/EPOXY MODULE-10 RECTANGULAR FLANGE MOUNT Active - - - 2070 ns 2280 ns EAR99 - UPPER UNSPECIFIED compliant R-PUFM-X10 SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE ISOLATED POWER CONTROL N-CHANNEL 4410 W 800 A 1700 V 20 V 2.46 V 7 V - - -
            2MBI600VG-170E
            2MBI600VG-170E

            293-372-2MBI600VG-170E FUJITSU Limited
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            Discrete Semiconductor Products

            Transistors - IGBTs - Single definition: An IGBT(Insulated-Gate Bipolar Transistor) is a three-terminal power semiconductor device primarily used as an electronic switch. It consist... Transistors - IGBTs - Single Product Listing: 2MBI200VA-060-50,2MBI1200VG-170E,2MBI100VA-060-50,2MBI150VA-060-50,2MBI600VG-170E.Discrete Semiconductor Products type:Diodes - Zener - Single(126889),Diodes - Rectifiers - Single(107990),Transistors - FETs, MOSFETs - Single(66871),Transistors - Bipolar (BJT) - Single(41289),Diodes - Bridge Rectifiers(23480) .Transistors - IGBTs - Single has 5 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Twicea.