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| Image | Part # | Manufacturer | Description | Availability | Pricing | Quantity | Surface Mount | Number of Terminals | Access Time-Max | Clock Frequency-Max (fCLK) | Ihs Manufacturer | Manufacturer Part Number | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supply Voltage-Nom (Vsup) | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Additional Feature | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Number of Ports | Operating Mode | Supply Current-Max | Organization | Output Characteristics | Seated Height-Max | Memory Width | Standby Current-Max | Memory Density | I/O Type | Memory IC Type | Alternate Memory Width | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Access Mode | Self Refresh | Length | Width |
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  | Mfr. Part #MT18LSDT1672G-133C2Twicea Part #533-248-MT18LSDT1672G-133C2 | Micron |
16MX72 Sync, 133MHZ, Dram Module
Datasheet
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| Min.:1 Mult.:1 | NO | 168 | 5.4 ns | - | MICRON TECHNOLOGY INC | MT18LSDT1672G-133C2 | - | 16777216 words | 16000000 | 70 °C | UNSPECIFIED | - | , | - | RECTANGULAR | MICROELECTRONIC ASSEMBLY | Obsolete | DIMM | 30 | 8.7 | Non-Compliant | No | 3.3 V | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | AUTO/SELF REFRESH | 8542.32.00.36 | DUAL | NO LEAD | 235 | 1 | - | unknown | 168 | R-XDMA-N168 | Not Qualified | 3.6 V | - | COMMERCIAL | 3 V | 1 | SYNCHRONOUS | - | 16MX72 | - | - | 72 | - | 1207959552 bit | - | SYNCHRONOUS DRAM MODULE | - | - | - | - | SINGLE BANK PAGE BURST | YES | - | - | ||
| MT18LSDT1672G-133C2 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #MT47H128M8BT-37ETwicea Part #533-248-MT47H128M8BT-37E | Micron |
Contact for details
Datasheet
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| Min.:1 Mult.:1 | YES | 92 | 0.5 ns | 267 MHz | MICRON TECHNOLOGY INC | MT47H128M8BT-37E | - | 134217728 words | 128000000 | 85 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA92,9X21,32 | BGA92,9X21,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | 30 | 5.59 | - | Yes | 1.8 V | e1 | - | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO/SELF REFRESH | 8542.32.00.32 | BOTTOM | BALL | 260 | 1 | 0.8 mm | unknown | 92 | R-PBGA-B92 | Not Qualified | 1.9 V | 1.8 V | OTHER | 1.7 V | 1 | SYNCHRONOUS | - | 128MX8 | 3-STATE | 1.2 mm | 8 | - | 1073741824 bit | COMMON | DDR DRAM | - | 8192 | 4,8 | 4,8 | MULTI BANK PAGE BURST | YES | 19 mm | 11 mm | ||
| MT47H128M8BT-37E | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #EDFA232A1MA-GD-F-DTwicea Part #533-248-EDFA232A1MA-GD-F-D | Micron |
DRAM Chip Mobile LPDDR3 SDRAM 16G-Bit 512Mx32 1.2V/1.8V 178-Pin FBGA Tray
Datasheet
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| Min.:1 Mult.:1 | YES | 178 | - | - | MICRON TECHNOLOGY INC | EDFA232A1MA-GD-F-D | - | 536870912 words | 512000000 | - | PLASTIC/EPOXY | TFBGA | TFBGA, | - | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | - | - | 5.83 | - | - | 1.2 V | - | - | - | - | AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM | - | BOTTOM | BALL | - | 1 | 0.8 mm | unknown | - | R-PBGA-B178 | - | 1.3 V | - | - | 1.14 V | 1 | SYNCHRONOUS | - | 512MX32 | - | 1.1 mm | 32 | - | 17179869184 bit | - | DDR DRAM | - | - | - | - | DUAL BANK PAGE BURST | YES | 13 mm | 11.5 mm | ||
| EDFA232A1MA-GD-F-D | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #MT46V64M4TG-6Twicea Part #533-248-MT46V64M4TG-6 | Micron |
DRAM Chip DDR SDRAM 256M-Bit 64Mx4 2.5V 66-Pin TSOP Tray
Datasheet
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| Min.:1 Mult.:1 | YES | 66 | - | 167 MHz | MICRON TECHNOLOGY INC | MT46V64M4TG-6 | - | 67108864 words | 64000000 | 70 °C | PLASTIC/EPOXY | TSSOP | TSSOP, TSSOP66,.46 | TSSOP66,.46 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Active | - | - | 5.83 | - | No | 2.5 V | e0 | - | - | Tin/Lead (Sn/Pb) | - | - | DUAL | GULL WING | - | - | 0.635 mm | unknown | - | R-PDSO-G66 | Not Qualified | - | 2.5 V | COMMERCIAL | - | - | - | - | 64MX4 | 3-STATE | - | 4 | - | 268435456 bit | COMMON | DDR DRAM | - | 8192 | 2,4,8 | 2,4,8 | - | - | - | - | ||
| MT46V64M4TG-6 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #MT48H16M32LFB5-75:CTwicea Part #533-248-MT48H16M32LFB5-75:C | Micron |
DRAM Chip Mobile LPSDR SDRAM 512M-Bit 16Mx32 1.8V 90-Pin VF-BGA (Alt: MT48H16M32LFB5-75:C)
Datasheet
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| Min.:1 Mult.:1 | YES | 90 | 5.4 ns | - | MICRON TECHNOLOGY INC | MT48H16M32LFB5-75:C | - | 16777216 words | 16000000 | 70 °C | PLASTIC/EPOXY | VFBGA | VFBGA, | - | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Active | BGA | 30 | 5.1 | - | Yes | 1.8 V | e1 | Yes | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO/SELF REFRESH | 8542.32.00.28 | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | 90 | R-PBGA-B90 | Not Qualified | 1.95 V | - | COMMERCIAL | 1.7 V | 1 | SYNCHRONOUS | - | 16MX32 | - | 1 mm | 32 | - | 536870912 bit | - | DDR DRAM | - | - | - | - | FOUR BANK PAGE BURST | YES | 13 mm | 8 mm | ||
| MT48H16M32LFB5-75:C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #MT16LD464AG-5XTwicea Part #533-248-MT16LD464AG-5X | Micron |
DRAM Memory Module, EDO, 4M x 64, 168 Pin, Plastic, DIMM
Datasheet
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| Min.:1 Mult.:1 | NO | 168 | 50 ns | - | MICRON TECHNOLOGY INC | MT16LD464AG-5X | 1 | 4194304 words | 4000000 | 70 °C | UNSPECIFIED | DIMM | DIMM-168 | DIMM168 | RECTANGULAR | MICROELECTRONIC ASSEMBLY | Obsolete | DIMM | NOT SPECIFIED | 8.82 | - | No | 3.3 V | - | - | EAR99 | - | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | 8542.32.00.24 | DUAL | NO LEAD | 225 | 1 | 1.27 mm | unknown | 168 | R-XDMA-N168 | Not Qualified | 3.6 V | 3.3 V | COMMERCIAL | 3 V | 1 | ASYNCHRONOUS | 1.6 mA | 4MX64 | 3-STATE | 8.89 mm | 64 | 0.008 A | 268435456 bit | COMMON | EDO DRAM MODULE | - | 2048 | - | - | FAST PAGE WITH EDO | NO | 133.35 mm | 25.4 mm | ||
| MT16LD464AG-5X | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #MT16D232M-7Twicea Part #533-248-MT16D232M-7 | Micron |
Fast Page DRAM Module, 2MX32, 70ns, CMOS
Datasheet
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| Min.:1 Mult.:1 | NO | 72 | 70 ns | - | MICRON TECHNOLOGY INC | MT16D232M-7 | 1 | 2097152 words | 2000000 | 70 °C | UNSPECIFIED | SIMM | SIMM-72 | SSIM72 | RECTANGULAR | MICROELECTRONIC ASSEMBLY | Obsolete | SIMM | 30 | 5.87 | - | No | 5 V | - | No | EAR99 | - | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | 8542.32.00.02 | SINGLE | NO LEAD | 235 | 1 | 1.27 mm | unknown | 72 | R-XSMA-N72 | Not Qualified | 5.5 V | 5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.816 mA | 2MX32 | 3-STATE | 25.654 mm | 32 | 0.016 A | 67108864 bit | COMMON | FAST PAGE DRAM MODULE | 16 | 1024 | - | - | FAST PAGE | NO | - | - | ||
| MT16D232M-7 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #EDFA164A1MA-GD-F-RTwicea Part #533-248-EDFA164A1MA-GD-F-R | Micron |
DRAM Chip Mobile LPDDR3 SDRAM 16G-Bit 256Mx64 1.2V/1.8V 253-Pin FBGA T/R
Datasheet
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| Min.:1 Mult.:1 | YES | 253 | - | - | MICRON TECHNOLOGY INC | EDFA164A1MA-GD-F-R | - | 268435456 words | 256000000 | - | PLASTIC/EPOXY | VFBGA | VFBGA, | - | SQUARE | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Obsolete | - | - | 5.84 | - | - | 1.2 V | - | - | - | - | AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY | - | BOTTOM | BALL | - | 1 | 0.5 mm | unknown | - | S-PBGA-B253 | - | 1.3 V | - | - | 1.14 V | 1 | SYNCHRONOUS | - | 256MX64 | - | 0.9 mm | 64 | - | 17179869184 bit | - | DDR DRAM | - | - | - | - | DUAL BANK PAGE BURST | YES | 12.5 mm | 12.5 mm | ||
| EDFA164A1MA-GD-F-R | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #EDJ4208EFBG-GN-F-DTwicea Part #533-248-EDJ4208EFBG-GN-F-D | Micron |
DRAM Chip DDR3 SDRAM 4G-Bit 512Mx8 1.35V 78-Pin F-BGA Tray
Datasheet
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| Min.:1 Mult.:1 | YES | 78 | - | - | MICRON TECHNOLOGY INC | EDJ4208EFBG-GN-F-D | - | 536870912 words | 512000000 | 85 °C | PLASTIC/EPOXY | TFBGA | TFBGA, | - | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | - | - | 5.83 | - | - | 1.35 V | - | - | - | - | AUTO/SELF REFRESH | - | BOTTOM | BALL | - | 1 | 0.8 mm | unknown | - | R-PBGA-B78 | - | 1.45 V | - | OTHER | 1.283 V | 1 | SYNCHRONOUS | - | 512MX8 | - | 1.2 mm | 8 | - | 4294967296 bit | - | DDR DRAM | - | - | - | - | MULTI BANK PAGE BURST | YES | 10.6 mm | 9 mm | ||
| EDJ4208EFBG-GN-F-D | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #MT46V16M16BG-75ETwicea Part #533-248-MT46V16M16BG-75E | Micron |
DRAM Chip DDR SDRAM 256M-Bit 16Mx16 2.5V 60-Pin FBGA Tray (Alt: MT46V16M16BG-75E)
Datasheet
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| Min.:1 Mult.:1 | YES | 60 | 0.75 ns | 133 MHz | MICRON TECHNOLOGY INC | MT46V16M16BG-75E | - | 16777216 words | 16000000 | 70 °C | PLASTIC/EPOXY | TBGA | TBGA, BGA60,9X12,40/32 | BGA60,9X12,40/32 | RECTANGULAR | GRID ARRAY, THIN PROFILE | Obsolete | BGA | 30 | 5.6 | - | Yes | 2.5 V | e1 | - | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO/SELF REFRESH | 8542.32.00.24 | BOTTOM | BALL | 260 | 1 | 1 mm | unknown | 60 | R-PBGA-B60 | Not Qualified | 2.7 V | 2.5 V | COMMERCIAL | 2.3 V | 1 | SYNCHRONOUS | - | 16MX16 | 3-STATE | 1.2 mm | 16 | - | 268435456 bit | COMMON | DDR DRAM | - | 8192 | 2,4,8 | 2,4,8 | FOUR BANK PAGE BURST | YES | 14 mm | 8 mm | ||
| MT46V16M16BG-75E | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #MT43A4G40100NFA-S15:ATwicea Part #533-248-MT43A4G40100NFA-S15:A | Micron |
DRAM Chip HMC SR 2G-Byte 1.2V 896-Pin BGA
Datasheet
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| Min.:1 Mult.:1 | YES | 896 | - | - | MICRON TECHNOLOGY INC | MT43A4G40100NFA-S15:A | - | 4294967296 words | 4000000000 | 105 °C | PLASTIC/EPOXY | BGA | BGA, | - | SQUARE | GRID ARRAY | Obsolete | - | - | 5.82 | - | - | 1.2 V | - | - | - | - | IT ALSO OPERATES AT LOGIC OPERATING TEMPERATURE 0 TO 110 DEG CENTIGRADE | 8542.32.00.71 | BOTTOM | BALL | - | 1 | 1 mm | compliant | - | S-PBGA-B896 | - | 1.26 V | - | OTHER | 1.14 V | - | SYNCHRONOUS | - | 4GX4 | - | 4.2 mm | 4 | - | 17179869184 bit | - | MEMORY CIRCUIT | - | - | - | - | - | - | 31 mm | 31 mm | ||
| MT43A4G40100NFA-S15:A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #EDF8132A1MC-GD-F-DTwicea Part #533-248-EDF8132A1MC-GD-F-D | Micron |
DRAM Chip Mobile LPDDR3 SDRAM 8G-Bit 256Mx32 1.2V/1.8V 178-Pin VFBGA Tray
Datasheet
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| Min.:1 Mult.:1 | YES | 178 | - | - | MICRON TECHNOLOGY INC | EDF8132A1MC-GD-F-D | - | 268435456 words | 256000000 | - | PLASTIC/EPOXY | VFBGA | VFBGA, | - | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Obsolete | - | - | 5.8 | - | - | 1.2 V | - | - | - | - | AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM | - | BOTTOM | BALL | - | 1 | 0.8 mm | unknown | - | R-PBGA-B178 | - | 1.3 V | - | - | 1.14 V | 1 | SYNCHRONOUS | - | 256MX32 | - | 0.9 mm | 32 | - | 8589934592 bit | - | DDR DRAM | - | - | - | - | DUAL BANK PAGE BURST | YES | 12 mm | 11.5 mm | ||
| EDF8132A1MC-GD-F-D | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #MT42C4064Z-10Twicea Part #533-248-MT42C4064Z-10 | Micron |
SPECIALTY MEMORY CIRCUIT
Datasheet
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| Min.:1 Mult.:1 | NO | 24 | 100 ns | - | MICRON TECHNOLOGY INC | MT42C4064Z-10 | - | 65536 words | 64000 | 70 °C | CERAMIC | ZIP | - | ZIP24,.1 | RECTANGULAR | IN-LINE | Active | - | - | 2.33 | - | No | 5 V | e0 | - | - | Tin/Lead (Sn/Pb) | - | 8542.32.00.71 | ZIG-ZAG | THROUGH-HOLE | - | - | 1.27 mm | unknown | - | R-XZIP-T24 | Not Qualified | - | 5 V | COMMERCIAL | - | - | - | 0.06 mA | 64KX4 | - | - | 4 | 0.004 A | 262144 bit | - | MEMORY CIRCUIT | - | - | - | - | - | - | - | - | ||
| MT42C4064Z-10 |
Index :
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