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| Image | Part # | Manufacturer | Description | Availability | Pricing | Quantity | Surface Mount | Number of Terminals | Access Time-Max | Ihs Manufacturer | Manufacturer Part Number | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Reflow Temperature-Max (s) | Risk Rank | Rohs Code | Supply Voltage-Nom (Vsup) | JESD-609 Code | ECCN Code | Terminal Finish | Additional Feature | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Temperature Grade | Supply Voltage-Min (Vsup) | Number of Ports | Operating Mode | Organization | Seated Height-Max | Memory Width | Memory Density | Memory IC Type | Access Mode | Self Refresh | Length | Width |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. Part #W3E64M72S-266SBMTwicea Part #523-248-W3E64M72S-266SBM | Microsemi |
DRAM Memory
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 219 | 0.75 ns | MERCURY SYSTEMS INC | W3E64M72S-266SBM | 67108864 words | 64000000 | 125 °C | -55 °C | PLASTIC/EPOXY | BGA | BGA, | RECTANGULAR | GRID ARRAY | Contact Manufacturer | - | 30 | 5.26 | - | 2.5 V | - | EAR99 | - | AUTO/SELF REFRESH | 8542.32.00.36 | BOTTOM | BALL | 225 | 1 | 1.27 mm | unknown | - | R-PBGA-B219 | Not Qualified | 2.7 V | MILITARY | 2.3 V | 1 | SYNCHRONOUS | 64MX72 | - | 72 | 4831838208 bit | DDR DRAM | FOUR BANK PAGE BURST | YES | - | - | ||
| W3E64M72S-266SBM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #W3E32M72SR-266SBITwicea Part #523-248-W3E32M72SR-266SBI | Microsemi |
DRAM Memory
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 208 | 0.75 ns | MICROSEMI CORP | W3E32M72SR-266SBI | 33554432 words | 32000000 | 85 °C | -40 °C | PLASTIC/EPOXY | BGA | BGA, | RECTANGULAR | GRID ARRAY | Transferred | BGA | NOT SPECIFIED | 5.21 | No | 2.5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | AUTO/SELF REFRESH | 8542.32.00.36 | BOTTOM | BALL | NOT SPECIFIED | 1 | - | compliant | 208 | R-PBGA-B208 | Not Qualified | 2.7 V | INDUSTRIAL | 2.3 V | 1 | SYNCHRONOUS | 32MX72 | - | 72 | 2415919104 bit | DDR DRAM | MULTI BANK PAGE BURST | YES | - | - | ||
| W3E32M72SR-266SBI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #W3E32M72SR-266SBMTwicea Part #523-248-W3E32M72SR-266SBM | Microsemi |
DRAM Memory
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 208 | 0.75 ns | MICROSEMI CORP | W3E32M72SR-266SBM | 33554432 words | 32000000 | 125 °C | -55 °C | PLASTIC/EPOXY | BGA | BGA, | RECTANGULAR | GRID ARRAY | Transferred | BGA | NOT SPECIFIED | 5.23 | No | 2.5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | AUTO/SELF REFRESH | 8542.32.00.36 | BOTTOM | BALL | NOT SPECIFIED | 1 | - | compliant | 208 | R-PBGA-B208 | Not Qualified | 2.7 V | MILITARY | 2.3 V | 1 | SYNCHRONOUS | 32MX72 | - | 72 | 2415919104 bit | DDR DRAM | MULTI BANK PAGE BURST | YES | - | - | ||
| W3E32M72SR-266SBM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #W3E32M72SR-266BMTwicea Part #523-248-W3E32M72SR-266BM | Microsemi |
DRAM Memory
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 208 | 0.75 ns | MICROSEMI CORP | W3E32M72SR-266BM | 33554432 words | 32000000 | 125 °C | -55 °C | PLASTIC/EPOXY | BGA | BGA, | RECTANGULAR | GRID ARRAY | Transferred | - | - | 5.58 | - | 2.5 V | - | - | - | AUTO/SELF REFRESH; LG-MAX; WD-MAX; SEATED HT-CALCULATED | - | BOTTOM | BALL | - | 1 | 1 mm | unknown | - | R-PBGA-B208 | - | 2.7 V | MILITARY | 2.3 V | 1 | SYNCHRONOUS | 32MX72 | 2.77 mm | 72 | 2415919104 bit | DDR DRAM | FOUR BANK PAGE BURST | YES | 25.1 mm | 16.1 mm | ||
| W3E32M72SR-266BM |
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