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5.0SMDJ11A Tech Specifications

Yageo  5.0SMDJ11A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Surface Mount YES
Diode Element Material SILICON
Number of Terminals 2Terminals
Exterior Housing Material 1
Type of module IGBT
Semiconductor structure transistor/transistor
Max. off-state voltage 1.2kV
Collector current 300A
Case SEMITRANS3
Electrical mounting FASTON connectors,
Gate-emitter voltage ±20V
Pulsed collector current 900A
Mechanical mounting screw
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer YAGEO CORP
Date Of Intro 2018-11-05
Breakdown Voltage-Nom 12.85 V
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
ECCN Code EAR99
Additional Feature EXCELLENT CLAMPING CAPABILITY, TR, 7 INCH: 500
HTS Code 8541.10.00.50
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) 40
Reference Standard UL CERTIFIED
JESD-30 Code R-PDSO-C2
Polarity UNIDIRECTIONAL
Configuration SINGLE
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE
Topology IGBT half-bridge
Rep Pk Reverse Voltage-Max 11 V
JEDEC-95 Code DO-214AB
Non-rep Peak Rev Power Dis-Max 5000 W
Reverse Current-Max 800 μA
Breakdown Voltage-Min 12.2 V
Clamping Voltage-Max 18.2 V
Reverse Test Voltage 11 V
Output Range 6.5 W
2nd Connector Number of Positions Loaded for UPS,
Breakdown Voltage-Max 13.5 V
Saturation Current 1
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5.0SMDJ11A Documents

Download datasheets and manufacturer documentation for   5.0SMDJ11A

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