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BYC30WT-600P Tech Specifications

WeEn Semiconductors  BYC30WT-600P technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Surface Mount NO
Housing material plastic
Weight 25.50
Diode Element Material SILICON
Number of Terminals 3Terminals
Exterior Housing Material 1
Transport packaging size/quantity 48*31.5*22/350
Mounting method on cable
Grounding no
Number of sockets 1socket
Maximum load power 600 W
Part Life Cycle Code Active
Ihs Manufacturer WEEN SEMICONDUCTORS CO LTD
Forward Voltage-Max (VF) 2.75 V
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
ECCN Code EAR99
Color white
Additional Feature LOW LEAKAGE CURRENT
Terminal Position SINGLE
Terminal Form THROUGH-HOLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Frequency 50 Hz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reference Standard IEC-60134
JESD-30 Code R-PSFM-T3
Configuration SINGLE
Diode Type RECTIFIER DIODE
Case Connection CATHODE
Number of Phases 1Phase
Rated current 2.5 A
Rep Pk Reverse Voltage-Max 600 V
JEDEC-95 Code TO-247
Non-rep Pk Forward Current-Max 300 A
Reverse Current-Max 10 μA
Rated voltage 220-250 V
Breakdown Voltage-Min 600 V
Reverse Recovery Time-Max 0.022 μs
Reverse Test Voltage 600 V
2nd Connector Number of Positions Loaded HYPER FAST RECOVERY POWER
Degree of protection IP20
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BYC30WT-600P Documents

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