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SIRB40DP-T1-GE3 Tech Specifications

Vishay  SIRB40DP-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Type of transistor N-MOSFET x2
Polarisation unipolar
Drain-source voltage 40V
Drain current 40A
Pulsed drain current 100A
Case PowerPAK® SO8
Gate-source voltage -16...20V
Mounting SMD
Kind of package1 tape
Kind of package reel
Kind of channel enhanced
Gross weight 1g
Certificates RoHS compliant
Power dissipation 29.6W
Gate charge 93nC
On-state resistance 4.2mΩ
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