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SI5517DU-T1-GE3 Tech Specifications

Vishay  SI5517DU-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Type of transistor N/P-MOSFET
Polarisation unipolar
Drain-source voltage 20/-20V
Drain current 6/-6A
Gate-source voltage ±8V
Mounting SMD
Kind of package1 tape
Kind of package reel
Kind of channel enhanced
Gross weight 0.1g
Certificates RoHS compliant
Power dissipation 8.3W
Gate charge 14/16nC
On-state resistance 131/55mΩ
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