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SI4963BDY-T1-GE3 Tech Specifications

Vishay  SI4963BDY-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Type of transistor P-MOSFET x2
Polarisation unipolar
Drain-source voltage -20V
Drain current -6.5A
Pulsed drain current -40A
Case SO8
Gate-source voltage ±12V
Mounting SMD
Kind of package1 tape
Kind of package reel
Kind of channel enhanced
Gross weight 0.1g
Certificates RoHS compliant
Power dissipation 2W
Gate charge 21nC
On-state resistance 50mΩ
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