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SI1965DH-T1-GE3 Tech Specifications

Vishay  SI1965DH-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Type of transistor P-MOSFET x2
Polarisation unipolar
Drain-source voltage -12V
Drain current -1.3A
Pulsed drain current -3A
Case1 SOT363
Case SC70-6
Gate-source voltage ±8V
Mounting SMD
Kind of package1 tape
Kind of package reel
Kind of channel enhanced
Gross weight 0.1g
Certificates RoHS compliant
Power dissipation 1.25W
Gate charge 4.2nC
On-state resistance 710mΩ
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